liu.seSearch for publications in DiVA
Endre søk
Link to record
Permanent link

Direct link
BETA
Paskov, Plamen P.
Alternativa namn
Publikasjoner (10 av 139) Visa alla publikasjoner
Paskov, P. P. & Monemar, B. (2018). Point Defects in group-III nitrides (1ed.). In: Jan Stehr, Irina Buyanova, Weimin Chen (Ed.), Defects in Advanced Electronic Materials and Novel Low Dimensional Structures: (pp. 27-61). Woodhead Publishing Limited
Åpne denne publikasjonen i ny fane eller vindu >>Point Defects in group-III nitrides
2018 (engelsk)Inngår i: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures / [ed] Jan Stehr, Irina Buyanova, Weimin Chen, Woodhead Publishing Limited, 2018, 1, s. 27-61Kapittel i bok, del av antologi (Fagfellevurdert)
Abstract [en]

Point defects in semiconductors play a fundamental role for the material properties. Dopants like impurities forming shallow donors and acceptors provide the means of controlling the electrical conductivity of the material, which is the basis of many applications in devices. Native defects like vacancies and interstitial atoms, and their combination with impurities introduce, mostly unwanted deep levels in the bandgap, and thus may serve as traps or recombination centers for the carriers. Some of these defects are introduced during the growth of the material, others by the processing steps necessary in the device production. In this chapter, we present current knowledge about point defects in the III-nitrides based on recent works, both experimental and theoretical, in the field. Materials discussed are AlN, GaN and InN and the ternary alloys between them.

sted, utgiver, år, opplag, sider
Woodhead Publishing Limited, 2018 Opplag: 1
Serie
Series in Optics and Optoelectronics
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-151555 (URN)10.1016/B978-0-08-102053-1.00002-8 (DOI)9780081020531 (ISBN)9780081020548 (ISBN)
Tilgjengelig fra: 2018-09-23 Laget: 2018-09-23 Sist oppdatert: 2018-09-24bibliografisk kontrollert
Blumenschein, N., Slomski, M., Paskov, P. P., Kaess, F., Breckenridge, M., Muth, J. F. & Paskova, T. (2018). Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique. In: David J. Rogers, David C. Look, Ferechteh H. Teharani (Ed.), Oxide-based Materials and Devices IX: . Paper presented at Oxide-Based Materials and Devices IX 2018; San Francisco; United States; 28 January 2018 through 1 February 2018 (pp. 105332G-1-105332G-8). SPIE - International Society for Optical Engineering, 10533
Åpne denne publikasjonen i ny fane eller vindu >>Thermal conductivity of bulk and thin film β-Ga2O3 measured by the 3ω technique
Vise andre…
2018 (engelsk)Inngår i: Oxide-based Materials and Devices IX / [ed] David J. Rogers, David C. Look, Ferechteh H. Teharani, SPIE - International Society for Optical Engineering, 2018, Vol. 10533, s. 105332G-1-105332G-8Konferansepaper, Publicerat paper (Fagfellevurdert)
sted, utgiver, år, opplag, sider
SPIE - International Society for Optical Engineering, 2018
Serie
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-151556 (URN)10.1117/12.2288267 (DOI)000453074500028 ()9781510615519 (ISBN)
Konferanse
Oxide-Based Materials and Devices IX 2018; San Francisco; United States; 28 January 2018 through 1 February 2018
Merknad

Funding agencies:  NSF [CBET-1336464, DMR-1506159]; Swedish Energy Agency [P39897-1]; Swedish Research Council [2017-03714]

Tilgjengelig fra: 2018-09-23 Laget: 2018-09-23 Sist oppdatert: 2019-01-07
Paskov, P. P. & Monemar, B. (2017). Optical Properties of III-Nitride Semiconductors (1ed.). In: Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen (Ed.), Handbook of GaN Semiconductor Materials and Devices: (pp. 87-116). Boca Raton: CRC Press
Åpne denne publikasjonen i ny fane eller vindu >>Optical Properties of III-Nitride Semiconductors
2017 (engelsk)Inngår i: Handbook of GaN Semiconductor Materials and Devices / [ed] Wengang (Wayne) Bi, Haochung (Henry) Kuo, Peicheng Ku, Bo Shen, Boca Raton: CRC Press, 2017, 1, s. 87-116Kapittel i bok, del av antologi (Fagfellevurdert)
Abstract [en]

The optical properties of the group-III-nitride materials are obviously of direct relevance for optoelectronic applications, but experiments measuring optical properties also give information on a range of electronic properties. There is already a wealth of data in the literature on the optical properties of III-nitrides [1–4], and here we will concentrate on some of the most recent additions to the scientific knowledge. The focus, looking at the present situation concerning technical applications of these materials, has been on GaN, InGaN, and AlGaN in recent decades. AlGaN materials are important for ultraviolet (UV) emitters and high electron mobility transistor (HEMT) structures and AlGaN optical properties have accordingly been studied over the entire Al composition range. InGaN materials (with In content <50%) have also been studied extensively, and the light-emitting diode (LED) applications based on InGaN/GaN quantum structures have already been awarded a Nobel Prize in 2014. However, the applications of InN are lagging behind. The development of growth procedures for InN and In-rich InGaN has been difficult, and their optical properties were consequently much less studied in the past.

sted, utgiver, år, opplag, sider
Boca Raton: CRC Press, 2017 Opplag: 1
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-151554 (URN)9781498747134 (ISBN)9781498747141 (ISBN)
Tilgjengelig fra: 2018-09-23 Laget: 2018-09-23 Sist oppdatert: 2018-09-28bibliografisk kontrollert
Bartos, I., Romanyuk, O., Houdkova, J., Paskov, P., Paskova, T. & Jiricek, P. (2016). Correction: Electron band bending of polar, semipolar and non-polar GaN surfaces (vol 119, 105303, 2016). Journal of Applied Physics, 119(15), 159901
Åpne denne publikasjonen i ny fane eller vindu >>Correction: Electron band bending of polar, semipolar and non-polar GaN surfaces (vol 119, 105303, 2016)
Vise andre…
2016 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, nr 15, s. 159901-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

n/a

sted, utgiver, år, opplag, sider
AMER INST PHYSICS, 2016
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-130308 (URN)10.1063/1.4947183 (DOI)000378991800043 ()
Tilgjengelig fra: 2016-07-31 Laget: 2016-07-28 Sist oppdatert: 2017-11-28
Bartos, I., Romanyuk, O., Houdkova, J., Paskov, P., Paskova, T. & Jiricek, P. (2016). Electron band bending of polar, semipolar and non-polar GaN surfaces. Journal of Applied Physics, 119(10), 105303
Åpne denne publikasjonen i ny fane eller vindu >>Electron band bending of polar, semipolar and non-polar GaN surfaces
Vise andre…
2016 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, nr 10, s. 105303-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The magnitudes of the surface band bending have been determined by X-ray photoelectron spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All surfaces have been prepared from crystalline GaN samples grown by the hydride-vapour phase epitaxy and separated from sapphire substrates. The Ga 3d core level peak shifts have been used for band bending determination. Small band bending magnitudes and also relatively small difference between the band bendings of the surfaces with opposite polarity have been found. These results point to the presence of electron surface states of different amounts and types on surfaces of different polarity and confirm the important role of the electron surface states in compensation of the bound surface polarity charges in wurtzite GaN crystals. (C) 2016 AIP Publishing LLC.

sted, utgiver, år, opplag, sider
AMER INST PHYSICS, 2016
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-127439 (URN)10.1063/1.4943592 (DOI)000372976900029 ()
Merknad

Funding Agencies|Academy of Sciences of the Czech Republic [M100101201]; Czech Science Foundation (GACR) [15-01687S]; NSF [DMR-1207075, OISE-1458427]; Swedish Energy Agency [P39897-1]

Tilgjengelig fra: 2016-04-30 Laget: 2016-04-26 Sist oppdatert: 2017-11-30
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Khromov, S., . . . Akasaki, I. (2014). Properties of the main Mg-related acceptors in GaN from optical and structural studies. Journal of Applied Physics, 115(5), 053507
Åpne denne publikasjonen i ny fane eller vindu >>Properties of the main Mg-related acceptors in GaN from optical and structural studies
Vise andre…
2014 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, nr 5, s. 053507-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in the light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be the main optical signature of the substitutional Mg-Ga acceptor, thus, having a rather large binding energy and a strong phonon coupling in optical transitions. We present new experimental data on homoepitaxial Mg-doped layers, which together with the previous collection of data give an improved experimental picture of the various luminescence features in Mg-doped GaN. In n-type GaN with moderate Mg doping (less than10(18) cm(-3)), the 3.466 eV ABE1 acceptor bound exciton and the associated 3.27eV donor-acceptor pair (DAP) band are the only strong photoluminescence (PL) signals at 2 K, and are identified as related to the substitutional Mg acceptor with a binding energy of 0.225 +/- 0.005 eV, and with a moderate phonon coupling strength. Interaction between basal plane stacking faults (BSFs) and Mg acceptors is suggested to give rise to a second deeper Mg acceptor species, with optical signatures ABE2 at 3.455 eV and a corresponding weak and broad DAP peak at about 3.15 eV. The 2.9 eV PL band has been ascribed to many different processes in the literature. It might be correlated with another deep level having a low concentration, only prominent at high Mg doping in material grown by the Metal Organic Chemical Vapor Deposition technique. The origin of the low temperature metastability of the Mg-related luminescence observed by many authors is here reinterpreted and explained as related to a separate non-radiative metastable deep level defect, i.e., not the Mg-Ga acceptor. (C) 2014 AIP Publishing LLC.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP), 2014
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-105582 (URN)10.1063/1.4862928 (DOI)000331645900013 ()
Tilgjengelig fra: 2014-03-28 Laget: 2014-03-27 Sist oppdatert: 2017-12-05
Monemar, B., Khromov, S., Pozina, G., Paskov, P., Bergman, P., Hemmingsson, C., . . . Morkoc, H. (2013). Luminescence of Acceptors in Mg-Doped GaN. Japanese Journal of Applied Physics, 52(8)
Åpne denne publikasjonen i ny fane eller vindu >>Luminescence of Acceptors in Mg-Doped GaN
Vise andre…
2013 (engelsk)Inngår i: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 52, nr 8Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Recent photoluminescence (PL) data for Mg-doped GaN at 2 K are discussed, with reference to published theoretical calculations of the electronic level structure. It is concluded that the typical PL peaks at 3.466 eV (acceptor bound exciton ABE1) and the broader 3.27 eV donor-acceptor pair (DAP) PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.

sted, utgiver, år, opplag, sider
Japan Society of Applied Physics, 2013
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-98151 (URN)10.7567/JJAP.52.08JJ03 (DOI)000323883100123 ()
Merknad

Funding Agencies|K. A. Wallenberg Foundation||Swedish Energy Agency||Li-Li NFM Center at Linkoping University||

Tilgjengelig fra: 2013-09-30 Laget: 2013-09-30 Sist oppdatert: 2017-12-06
Hsu, C.-W., Ganguly, A., Chen, C.-P., Kuo, C.-C., Paskov, P., Holtz, P.-O., . . . Chen, K.-H. (2011). Optical properties of functionalized GaN nanowires. JOURNAL OF APPLIED PHYSICS, 109(5), 053523
Åpne denne publikasjonen i ny fane eller vindu >>Optical properties of functionalized GaN nanowires
Vise andre…
2011 (engelsk)Inngår i: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 109, nr 5, s. 053523-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results.

sted, utgiver, år, opplag, sider
American Institute of Physics, 2011
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-67158 (URN)10.1063/1.3552919 (DOI)000288387900046 ()
Merknad
Original Publication: Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen, Optical properties of functionalized GaN nanowires, 2011, JOURNAL OF APPLIED PHYSICS, (109), 5, 053523. http://dx.doi.org/10.1063/1.3552919 Copyright: American Institute of Physics http://www.aip.org/ Tilgjengelig fra: 2011-04-01 Laget: 2011-04-01 Sist oppdatert: 2011-12-29
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Lindgren, D., . . . Ohlsson, J. (2011). Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates. In: Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon (Ed.), Gallium Nitride Materials and Devices VI: . Paper presented at Gallium Nitride Materials and Devices VI, San Francisco, California, United States, 24–27 January 2011 (pp. 793907). SPIE - International Society for Optical Engineering, 7939
Åpne denne publikasjonen i ny fane eller vindu >>Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Vise andre…
2011 (engelsk)Inngår i: Gallium Nitride Materials and Devices VI / [ed] Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, SPIE - International Society for Optical Engineering, 2011, Vol. 7939, s. 793907-Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the low temperature BE spectra on excitation intensity as well as the transient decay behavior demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also demonstrated and briefly discussed.

sted, utgiver, år, opplag, sider
SPIE - International Society for Optical Engineering, 2011
Serie
Proceedings of SPIE - International Society for Optical Engineering, ISSN 0277-786X ; Vol. 7939
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-73568 (URN)10.1117/12.874687 (DOI)9780819484765 (ISBN)
Konferanse
Gallium Nitride Materials and Devices VI, San Francisco, California, United States, 24–27 January 2011
Tilgjengelig fra: 2012-01-09 Laget: 2012-01-09 Sist oppdatert: 2015-09-22bibliografisk kontrollert
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Lindgren, D., . . . Ohlsson, J. (2011). Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1532-1534
Åpne denne publikasjonen i ny fane eller vindu >>Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Vise andre…
2011 (engelsk)Inngår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 208, nr 7, s. 1532-1534Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependece of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23eV Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly disussed. (C) 2011 WILEY-VCH Verlag Gmbh andamp; Co. KGaA, Weinheim

sted, utgiver, år, opplag, sider
Wiley-VCH Verlag Berlin, 2011
Emneord
GaN, Mg-doping, MOCVD, m-plane, nanowire, photoluminescence
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-70279 (URN)10.1002/pssa.201001036 (DOI)000293803600013 ()
Merknad
Funding Agencies|K. A. Wallenberg Foundation||Swedish Energy Agency||Tilgjengelig fra: 2011-08-30 Laget: 2011-08-30 Sist oppdatert: 2015-09-22
Organisasjoner