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Wissting, Jonas
Publikasjoner (3 av 3) Visa alla publikasjoner
Schmidt, S., Czigany, Z., Wissting, J., Greczynski, G., Janzén, E., Jensen, J., . . . Hultman, L. (2016). A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNX thin film growth with different inert gases. Diamond and related materials, 64, 13-26
Åpne denne publikasjonen i ny fane eller vindu >>A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNX thin film growth with different inert gases
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2016 (engelsk)Inngår i: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 64, s. 13-26Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Reactive direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS) discharges of carbon in different inert gas mixtures (N-2/Ne, N-2/Ar, and N-2/Kr) were investigated for the growth of carbon-nitride (CNX) thin films. Ion mass spectrometry showed that energies of abundant plasma cations are governed by the inert gas and the N-2-to-inert gas flow ratios. The population of ion species depends on the sputter mode; HiPIMS yields approximately ten times higher flux ratios of ions originating from the target to process gas ions than DCMS. Exceptional are discharges in Ne with N-2-to-Ne flow ratios <20%. Here, cation energies and the amount of target ions are highest without influence on the sputter mode. CNX thin films were deposited in 14% N-2/inert gas mixtures at substrate temperatures of 110 degrees C and 430 degrees C. The film properties show a correlation to the substrate temperature, the applied inert gas and sputter mode. The mechanical performance of the films is mainly governed by their morphology and composition, but not by their microstructure. Amorphous and fullerene-like CN0.14 films exhibiting a hardness of similar to 15 GPa and an elastic recovery of similar to 90% were deposited at 110 degrees C in reactive Kr atmosphere by DCMS and HiPIMS.

sted, utgiver, år, opplag, sider
ELSEVIER SCIENCE SA, 2016
Emneord
Magnetron sputtering; Inert gases; Plasma analysis; Langmuir probe measurement; CNX film stress; CNX hardness
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-128146 (URN)10.1016/j.diamond.2016.01.009 (DOI)000374608100003 ()
Merknad

Funding Agencies|Carl Tryggers Foundation for Scientific Research; Hungarian Academy of Sciences

Tilgjengelig fra: 2016-05-19 Laget: 2016-05-19 Sist oppdatert: 2017-11-30
Hänninen, T., Schmidt, S., Wissting, J., Jensen, J., Hultman, L. & Högberg, H. (2016). Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS. Journal of Physics D: Applied Physics, 49(13), Article ID 135309.
Åpne denne publikasjonen i ny fane eller vindu >>Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS
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2016 (engelsk)Inngår i: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 49, nr 13, artikkel-id 135309Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Silicon oxynitride (SiOxNy, x = 0.2 − 1.3, y = 0.2 − 0.7) thin films were synthesized by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O atmospheres. It is found that the composition of the material can be controlled by the reactive gas flow and the average target power. X-ray photoelectron spectroscopy (XPS) shows that high average powers result in more silicon-rich films, while lower target powers yield silicon-oxide-like material due to more pronounced target poisoning. The amount of nitrogen in the films can be controlled by the percentage of nitrous oxide in the working gas. The nitrogen content remains at a constant level while the target is operated in the transition region between metallic and poisoned target surface conditions. The extent of target poisoning is gauged by the changes in peak target current under the different deposition conditions. XPS also shows that varying concentrations and ratios of oxygen and nitrogen in the films result in film chemical bonding structures ranging from silicon-rich to stoichiometric silicon oxynitrides having no observable Si−Si bond contributions. Spectroscopic ellipsometry shows that the film optical properties depend on the amount and ratio of oxygen and nitrogen in the compound, with film refractive indices measured at 633 nm ranging between those of SiO2 and Si3N4.

sted, utgiver, år, opplag, sider
Institute of Physics (IOP), 2016
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-123382 (URN)10.1088/0022-3727/49/13/135309 (DOI)000371908800023 ()
Merknad

Funding agencies:  Carl Tryggers Foundation for Scientific Research; European Union under the LifeLongJoints Project [GA-310477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

Tilgjengelig fra: 2015-12-15 Laget: 2015-12-15 Sist oppdatert: 2018-02-13bibliografisk kontrollert
Khan, A., Abbasi, M. A., Hussain, M., Ibupoto, Z. H., Wissting, J., Nur, O. & Willander, M. (2012). Piezoelectric nanogenerator based on zinc oxide nanorods grown on textile cotton fabric. Applied Physics Letters, 101(19)
Åpne denne publikasjonen i ny fane eller vindu >>Piezoelectric nanogenerator based on zinc oxide nanorods grown on textile cotton fabric
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2012 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, nr 19Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This investigation explores piezoelectricity generation from ZnO nanorods, which were grown on silver coated textile cotton fabrics using the low temperature aqueous chemical growth method. The morphology and crystal structure studies were carried out by x-ray diffraction, scanning electron microscopic and high resolution transmission electron microscopic techniques, respectively. ZnO nanorods were highly dense, well aligned, uniform in spatial distribution and exhibited good crystal quality. The generation of piezoelectricity from fabricated ZnO nanorods grown on textile cotton fabrics was measured using contact mode atomic force microscopy. The average output voltage generated from ZnO nanorods was measured to be around 9.5 mV. This investigation is an important achievement regarding the piezoelectricity generation on textile cotton fabric substrate. The fabrication of this device provides an alternative approach for a flexible substrate to develop devices for energy harvesting and optoelectronic technology on textiles.

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP), 2012
Emneord
atomic force microscopy; electric generators; energy harvesting; flexible electronics; II-VI semiconductors; nanofabrication; nanorods; optoelectronic devices; piezoelectric devices; piezoelectricity; scanning electron microscopy; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; X-ray diffraction; zinc compounds
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-87217 (URN)10.1063/1.4766921 (DOI)000311320100070 ()
Tilgjengelig fra: 2013-01-14 Laget: 2013-01-14 Sist oppdatert: 2017-12-06
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