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2020 (English)In: Journal of Materials Chemistry C, ISSN 2050-7526, E-ISSN 2050-7534, Vol. 8, no 25, p. 8457-8465Article in journal (Refereed) Published
Abstract [en]
Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an AlN buffer layer or nitridized sapphire as substrate is used to facilitate the GaN growth. Here, we present a low temperature atomic layer deposition (ALD) process using tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting behaviour between 130–250 °C with a growth rate of 1.4 Å per cycle. The GaN films produced were crystalline on Si (100) at all deposition temperatures with a near stochiometric Ga/N ratio with low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ∼3.42 eV and the Fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based electronic devices.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2020
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-169938 (URN)10.1039/d0tc02085k (DOI)000545331300009 ()2-s2.0-85087704720 (Scopus ID)
2020-09-252020-09-252022-09-05Bibliographically approved