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Hultman, Lars, ProfessorORCID iD iconorcid.org/0000-0002-2837-3656
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Publications (10 of 650) Show all publications
Pshyk, O. V., Li, X., Petrov, I., Sangiovanni, D. G., Palisaitis, J., Hultman, L. & Greczynski, G. (2023). Discovery of Guinier-Preston zone hardening in refractory nitride ceramics. Acta Materialia, 255, Article ID 119105.
Open this publication in new window or tab >>Discovery of Guinier-Preston zone hardening in refractory nitride ceramics
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2023 (English)In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 255, article id 119105Article in journal (Refereed) Published
Abstract [en]

Traditional age hardening mechanisms in refractory ceramics consist of precipitation of fine particles. These processes are vital for widespread wear-resistant coating applications. Here, we report novel Guinier-Preston zone hardening, previously only known to operate in soft light-metal alloys, taking place in refractory ceramics like multicomponent nitrides. The added superhardening, discovered in thin films of Ti-Al-W-N upon high temperature annealing, comes from the formation of atomic-plane-thick W disks populating {111} planes of the cubic matrix, as observed by atomically resolved high resolution scanning transmission electron microscopy and corroborated by ab initio calculations and molecular dynamics simulations. Guinier-Preston zone hardening concurrent with spinodal decomposition is projected to exist in a range of other ceramic solid solutions and thus provides a new approach for the development of advanced materials with outstanding mechanical properties and higher operational temperature range for the future demanding applications.

Place, publisher, year, edition, pages
Elsevier, 2023
Keywords
Guinier-Preston zone, TiAlN, Ceramics, Age hardening, Spinodal decomposition
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-196410 (URN)10.1016/j.actamat.2023.119105 (DOI)001025995100001 ()
Note

Funding: Swedish Research Council VR [2018-03957, 2021-03652, 2021-04426]; Swedish Energy Agency [51201-1]; Knut and Alice Wallenberg Foundation [KAW2019.0290, CTS 20:150]; Carl Tryggers Stiftelse [21:1272, 2017-00646_9]; Swedish Research Council VR-RFI [VR-2018-0597]; Swedish Foundation for Strategic Research [2021-00171]; Swedish Research Council [RIF21-0026]; Swedish National Infrastructure in Advanced Electron Microscopy [22-4, 2022-03071]; Aforsk Foundation; Competence Center Functional Nanoscale Materials (FunMat-II) VINNOVA;  [KAW2016.0358];  [RIF14-0053]

Available from: 2023-08-01 Created: 2023-08-01 Last updated: 2023-08-31
Chang, J.-C., Tseng, E. N., Lo, Y.-L., Nayak, S. K., Lundin, D., Persson, P. O. Å., . . . Hsiao, C.-L. (2023). HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate. Vacuum, 217, Article ID 112553.
Open this publication in new window or tab >>HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate
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2023 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 217, article id 112553Article in journal (Refereed) Published
Abstract [en]

Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD, 2023
Keywords
GaN; Magnetron sputtering; HiPIMS; Dislocations; XRCTEM
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-197990 (URN)10.1016/j.vacuum.2023.112553 (DOI)001072124300001 ()
Funder
Swedish Research CouncilSwedish Energy AgencyThe Swedish Foundation for International Cooperation in Research and Higher Education (STINT)Carl Tryggers foundation Olle Engkvists stiftelse
Note

Funding agencies: This research was funded by Vetenskapsrådet (grant number 2018-04198), Energimyndigheten (grant number 46658-1), Carl Tryggers Stiftelse (grant number CTS 22:2029) and Stiftelsen Olle Engkvist Byggmästare (grant number 197-0210). The Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU 2009-00971) is acknowledged for financial support. We acknowledge STINT foundation, Sweden, for supporting this international collaboration (grant number: MG2019-8485).

Available from: 2023-09-20 Created: 2023-09-20 Last updated: 2023-12-21
Nzulu, G. K., Högberg, H., Eklund, P., Hultman, L., Nude, P. M., Yaya, A. & Magnuson, M. (2023). Pathfinder elements and indicator minerals of Au from the Kubi Gold ore deposits in Ghana. Environmental Earth Sciences, 82(16), Article ID 386.
Open this publication in new window or tab >>Pathfinder elements and indicator minerals of Au from the Kubi Gold ore deposits in Ghana
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2023 (English)In: Environmental Earth Sciences, ISSN 1866-6280, E-ISSN 1866-6299, Vol. 82, no 16, article id 386Article in journal (Refereed) Published
Abstract [en]

The Au mineralization in the Kubi Gold Mining Area in the Birimian of Ghana is associated with garnet (about 85 vol.%), magnetite, pyrrhotite, arsenopyrite, and sulfide minerals, as well as quartz with gold and calcite. These minerals and the included elements can act as indicator minerals or pathfinder elements. For the present work, we collected samples from drill holes at different depths, from the alluvial zone (0–45 m) to the ore zone (75–100 m). The distributions of minerals and elements in the rocks that act as indicator minerals and pathfinder elements in the concession area were investigated along the drill hole cross sections. X-ray diffraction shows that the samples contain garnet, pyrite, periclase, and quartz as the main indicator minerals. By energy-dispersive X-ray spectroscopy, Fe, Mg, Al, S, O, Mn, Na, Cu, Si, and K are identified as corresponding pathfinder elements. The results indicate that the Au mineralization in the Kubi Mine area correlates mostly with the occurrence of garnet, pyrite, goethite, and kaolinite in the host rocks, which show towards the surface increasingly hematitic and limonitic alteration in form of Fe(oxy-)hydroxides.

Place, publisher, year, edition, pages
Springer, 2023
Keywords
Pathfinder element, X-ray, Spectroscopy, Birimian, Gold
National Category
Geology
Identifiers
urn:nbn:se:liu:diva-196461 (URN)10.1007/s12665-023-11058-z (DOI)001041675600003 ()
Funder
Linköpings universitet, Faculty Grant SFO-Mat-LiU no. 2009 00971Carl Tryggers foundation , CTS20:272,CTS16:303, CTS14:310
Note

Funding agencies:Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU no. 2009 00971).Swedish Energy Research(Grant no. 43606-1)Carl Tryggers Foundation (CTS20:272,CTS16:303, CTS14:310)Open access funding provided by Linköping University

Available from: 2023-08-07 Created: 2023-08-07 Last updated: 2023-09-14Bibliographically approved
Alves Machado Filho, M., Hsiao, C.-L., dos Santos, R. B., Hultman, L., Birch, J. & Gueorguiev, G. K. (2023). Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations. ACS Nanoscience Au, 3(1), 84-93
Open this publication in new window or tab >>Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations
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2023 (English)In: ACS Nanoscience Au, E-ISSN 2694-2496, Vol. 3, no 1, p. 84-93Article in journal (Refereed) Published
Abstract [en]

By addressing precursor prevalence and energetics using the DFT-based synthetic growth concept (SGC), the formation mechanism of self-induced InAlN core–shell nanorods (NRs) synthesized by reactive magnetron sputter epitaxy (MSE) is explored. The characteristics of In- and Al-containing precursor species are evaluated considering the thermal conditions at a typical NR growth temperature of around 700 °C. The cohesive and dissociation energies of In-containing precursors are consistently lower than those of their Al-containing counterparts, indicating that In-containing precursors are more weakly bonded and more prone to dissociation. Therefore, In-containing species are expected to exhibit lower abundance in the NR growth environment. At increased growth temperatures, the depletion of In-based precursors is even more pronounced. A distinctive imbalance in the incorporation of Al- and In-containing precursor species (namely, AlN/AlN+, AlN2/AlN2+, Al2N2/Al2N2+, and Al2/Al2+ vs InN/InN+, InN2/InN2+, In2N2/In2N2+, and In2/In2+) is found at the growing edge of the NR side surfaces, which correlates well with the experimentally obtained core–shell structure as well as with the distinctive In-rich core and vice versa for the Al-rich shell. The performed modeling indicates that the formation of the core–shell structure is substantially driven by the precursors’ abundance and their preferential bonding onto the growing edge of the nanoclusters/islands initiated by phase separation from the beginning of the NR growth. The cohesive energies and the band gaps of the NRs show decreasing trends with an increment in the In concentration of the NRs’ core and with an increment in the overall thickness (diameter) of the NRs. These results reveal the energy and electronic reasons behind the limited growth (up to ∼25% of In atoms of all metal atoms, i.e., InxAl1–xN, x ∼ 0.25) in the NR core and may be qualitatively perceived as a limiting factor for the thickness of the grown NRs (typically <50 nm).

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2023
Keywords
self-induced InAlN core−shell nanorods; synthetic growth concept; DFT; reactive magnetron sputter epitaxy; precursor species; nucleation and structural evolution of nanostructures; immiscible systems at nanoscale
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-197988 (URN)10.1021/acsnanoscienceau.2c00041 (DOI)001091274000001 ()37101465 (PubMedID)
Funder
Swedish Research Council, 2018-04198Swedish Research Council, 2018-05973Swedish Research Council, SNIC 2022/23-137Swedish Research Council, SNIC 2022/5-135Swedish Energy Agency, 46658-1Linköpings universitet, 2009-00971
Note

Funding: Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials (AFM) at Linkoping University [2009-00971]; Swedish Research Council (Vetenskapsradet) [2018-04198]; Swedish Energy Agency (Energimyndigheten) [46658-1]; Brazilian Research agency CNPq; Brazilian Research agency CAPES; Swedish Research Council [2018-05973]

Available from: 2023-09-20 Created: 2023-09-20 Last updated: 2023-11-15Bibliographically approved
Chang, J.-C., Birch, J., Kostov Gueorguiev, G., Bakhit, B., Greczynski, G., Eriksson, F., . . . Hsiao, C.-L. (2022). Domain epitaxial growth of Ta3N5 film on c-plane sapphire substrate. Surface & Coatings Technology, 443, Article ID 128581.
Open this publication in new window or tab >>Domain epitaxial growth of Ta3N5 film on c-plane sapphire substrate
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2022 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 443, article id 128581Article in journal (Refereed) Published
Abstract [en]

Tritantalum pentanitride (Ta3N5) semiconductor is a promising material for photoelectrolysis of water with high efficiency. Ta3N5 is a metastable phase in the complex system of TaN binary compounds. Growing stabilized single-crystal Ta3N5 films is correspondingly challenging. Here, we demonstrate the growth of a nearly single-crystal Ta3N5 film with epitaxial domains on c-plane sapphire substrate, Al2O3(0001), by magnetron sputter epitaxy. Introduction of a small amount ~2% of O2 into the reactive sputtering gas mixed with N2 and Ar facilitates the formation of a Ta3N5 phase in the film dominated by metallic TaN. In addition, we indicate that a single-phase polycrystalline Ta3N5 film can be obtained with the assistance of a Ta2O5 seed layer. With controlling thickness of the seed layer smaller than 10 nm and annealing at 1000 °C, a crystalline β phase Ta2O5 was formed, which promotes the domain epitaxial growth of Ta3N5 films on Al2O3(0001). The mechanism behind the stabilization of the orthorhombic Ta3N5 structure resides in its stacking with the ultrathin seed layer of orthorhombic β-Ta2O5, which is energetically beneficial and reduces the lattice mismatch with the substrate.

Place, publisher, year, edition, pages
Elsevier, 2022
Keywords
Ta3N5, Sputtering, MSE, XRD, XPS, Water splitting, Single crystal
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-188556 (URN)10.1016/j.surfcoat.2022.128581 (DOI)000868328000003 ()
Note

Funding: Swedish Research Council [2018-04198, 2021-00357]; Swedish Energy Agency [46658-1]; Stiftelsen Olle Engkvist Byggmastare [197-0210]; Linkoping University Library; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]

Available from: 2022-09-16 Created: 2022-09-16 Last updated: 2023-12-21Bibliographically approved
Dorri, S., Palisaitis, J., Greczynski, G., Petrov, I., Birch, J., Hultman, L. & Bakhit, B. (2022). Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering. Corrosion Science, 206, Article ID 110493.
Open this publication in new window or tab >>Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering
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2022 (English)In: Corrosion Science, ISSN 0010-938X, E-ISSN 1879-0496, Vol. 206, article id 110493Article in journal (Refereed) Published
Abstract [en]

We systematically study the oxidation properties of sputter-deposited TiB2.5 coatings up to 700 °C. Oxide-scale thickness dox increases linearly with time ta for 300, 400, 500, and 700 °C, while an oxidation-protective behavior occurs with dox=250∙ta0.2 at 600 °C. Oxide-layer’s structure changes from amorphous to rutile/anatase-TiO2 at temperatures ≥ 500 °C. Abnormally low oxidation rate at 600 °C is attributed to a highly dense columnar TiO2-sublayer growing near oxide/film interface with a top-amorphous thin layer, suppressing oxygen diffusion. A model is proposed to explain the oxide-scale evolution at 600 °C. Decreasing heating rate to 1.0 °C/min plays a noticeable role in the TiB2.5 oxidation.

Place, publisher, year, edition, pages
Pergamon-Elsevier Science Ltd, 2022
Keywords
Sputtering, Thin films, Titanium diboride (TiB), Microstructure, Oxidation
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-188286 (URN)10.1016/j.corsci.2022.110493 (DOI)000842008100003 ()
Note

Funding: Swedish Research Council VR [2018-03957, 2019-00191, 2021-00357]; Swedish Foundation for Strategic Research (SSF); Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials (AFM) at Link o ?; ping University (Faculty Grant SFO Mat LiU) [2009 00971]; Swedish National Graduate School in Neutron Scattering (SwedNess); Knut and Alice Wallenberg Foundation [KAW 2015.0043]

Available from: 2022-09-08 Created: 2022-09-08 Last updated: 2022-10-07
Malyshev, O. B., Mayrhofer, P. H., Hultman, L., Eklund, P. & Sabbatini, L. (2022). Preface. Vacuum, 197, Article ID 110818.
Open this publication in new window or tab >>Preface
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2022 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 197, article id 110818Article in journal, Editorial material (Other academic) Published
Place, publisher, year, edition, pages
Oxford, United Kingdom: Elsevier, 2022
National Category
Communication Studies
Identifiers
urn:nbn:se:liu:diva-183042 (URN)10.1016/j.vacuum.2021.110818 (DOI)000747196800006 ()2-s2.0-85121872913 (Scopus ID)
Available from: 2022-02-21 Created: 2022-02-21 Last updated: 2022-03-03Bibliographically approved
Magnuson, M., Hultman, L. & Högberg, H. (2022). Review of Transition-Metal Diboride Thin Films. Vacuum, 196, Article ID 110567.
Open this publication in new window or tab >>Review of Transition-Metal Diboride Thin Films
2022 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 196, article id 110567Article, review/survey (Refereed) Published
Abstract [en]

We review the thin film growth, chemistry, and physical properties of Group 4-6 transition-metal diboride (TMB2) thin films with AlB2-type crystal structure (Strukturbericht designation C32). Industrial applications are growing rapidly as TMB2 begin competing with conventional refractory ceramics like carbides and nitrides, including pseudo-binaries such as Ti1-xAlxN. The TMB2 crystal structure comprises graphite-like honeycombed atomic sheets of B interleaved by hexagonal close-packed TM layers. From the C32 crystal structure stems unique properties including high melting point, hardness, and corrosion resistance, yet limited oxidation resistance, combined with high electrical conductivity. We correlate the underlying chemical bonding, orbital overlap, and electronic structure to the mechanical properties, resistivity, and high-temperature properties unique to this class of materials. The review highlights the importance of avoiding contamination elements (like oxygen) and boron segregation on both the target and substrate sides during sputter deposition, for better-defined properties, regardless of the boride system investigated. This is a consequence of the strong tendency for B to segregate to TMB2 grain boundaries for boron-rich compositions of the growth flux. It is judged that sputter deposition of TMB2 films is at a tipping point towards a multitude of applications for TMB2 not solely as bulk materials, but also as protective coatings and electrically conducting high-temperature stable thin films.

Place, publisher, year, edition, pages
Elsevier, 2022
Keywords
Diborides; Thin film growth; Phase diagrams; Density functional theory; Properties
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-178819 (URN)10.1016/j.vacuum.2021.110567 (DOI)000747123500004 ()
Note

Funding: Swedish Energy Research [43606-1]; Carl Tryggers Foundation [CTS20:272, CTS16:303, CTS14:310]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Knut and Alice Wallenberg Foundation, Project Grant (The Boride Frontier) [KAW 2015.0043]; Swedish Research Council (VR)Swedish Research Council [621-2010-3921]; AForsk Foundation [16-430]

Available from: 2021-08-31 Created: 2021-08-31 Last updated: 2022-02-11Bibliographically approved
Bakhit, B., Palisaitis, J., Wu, Z., Sortica, M. A., Primetzhofer, D., Persson, P. O. Å., . . . Greczynski, G. (2021). Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films. Scripta Materialia, 191, 120-125
Open this publication in new window or tab >>Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films
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2021 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 191, p. 120-125Article in journal (Refereed) Published
Abstract [en]

We recently showed that sputter-deposited Zr1-xTaxBy thin films have hexagonal AlB2-type columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. As-deposited layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we study the mechanical properties of ZrB2.4, Zr0.8Ta0.2B1.8, and Zr0.7Ta0.3B1.5 films annealed in Ar atmosphere as a function of annealing temperature Ta up to 1200 °C. In-situ and ex-situ nanoindentation analyses reveal that all films undergo age hardening up to Ta = 800 °C, with the highest hardness achieved for Zr0.8Ta0.2B1.8 (45.5±1.0 GPa). The age hardening, which occurs without any phase separation or decomposition, can be explained by point-defect recovery that enhances chemical bond density. Although hardness decreases at Ta > 800 °C due mainly to recrystallization, column coarsening, and planar defect annihilation, all layers show hardness values above 34 GPa over the entire Ta range.

Place, publisher, year, edition, pages
Elsevier, 2021
Keywords
Thin films; Transition-metal (TM) diboridesAge hardening; Thermal stability; Hardness and elastic modulus
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-170224 (URN)10.1016/j.scriptamat.2020.09.026 (DOI)urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-170224 ()2-s2.0-85091672167 (Scopus ID)
Available from: 2020-10-02 Created: 2020-10-02 Last updated: 2024-02-01Bibliographically approved
Bakhit, B., Mráz, S., Lu, J., Rosén, J., Schneider, J. M., Hultman, L., . . . Greczynski, G. (2021). Dense Ti0.67Hf0.33B1.7 thin films grown by hybrid HfB2-HiPIMS/TiB2-DCMS co-sputtering without external heating. Vacuum, 186, Article ID 110057.
Open this publication in new window or tab >>Dense Ti0.67Hf0.33B1.7 thin films grown by hybrid HfB2-HiPIMS/TiB2-DCMS co-sputtering without external heating
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2021 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 186, article id 110057Article in journal (Refereed) Published
Abstract [en]

There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti0.67Hf0.33B1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB2-HiPIMS/TiB2-DCMS) in pure Ar on Al2O3(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf+) irradiation promoting the growth of dense Ti0.67Hf0.33B1.7.

Place, publisher, year, edition, pages
Elsevier, 2021
Keywords
Thin films, Borides, Low-temperature sputter deposition, Hybrid HiPIMS/DCMS, Hardness
National Category
Ceramics
Identifiers
urn:nbn:se:liu:diva-172653 (URN)10.1016/j.vacuum.2021.110057 (DOI)000620647100008 ()
Funder
Knut and Alice Wallenberg Foundation, KAW 2015.0043Swedish Research Council, 2018-03957, 642-2013-8020Vinnova, 2019-04882Swedish Energy Agency, 51201-1Carl Tryggers foundation , CTS 15:219, CTS 17:166, CTS 14:431Linköpings universitet, 2009 00971Swedish Research Council, #2017-00646_9Swedish Foundation for Strategic Research , RIF14-0053, RIF14-0074
Note

Additional funding agencies: German Science Foundation (DFG) : SCHN735/42-1.

Available from: 2021-01-15 Created: 2021-01-15 Last updated: 2021-12-28Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0002-2837-3656

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