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Andersson, M., Lloyd Spetz, A. & Puglisi, D. (2020). Recent progress in silicon carbide field effect gas sensors (2ed.). In: Raivo Jaaniso and Ooi Kiang Tan (Ed.), Semiconductor gas sensors: (pp. 309-346). Oxford: Woodhead Publishing Limited
Open this publication in new window or tab >>Recent progress in silicon carbide field effect gas sensors
2020 (English)In: Semiconductor gas sensors / [ed] Raivo Jaaniso and Ooi Kiang Tan, Oxford: Woodhead Publishing Limited, 2020, 2, p. 309-346Chapter in book (Refereed)
Abstract [en]

The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C with an increased number of detectable gases. Here, we review recent progress in research and applications, starting with transducer and detection mechanisms, presenting new material combinations as sensing layers for improved selectivity and detection limits down to subparts per billion. We describe how temperature cycled operation combined with advanced data evaluation enables one sensor to act as a sensor array thereby vastly improving selectivity. Field tests require advanced packaging, which is described, and examples of possible applications like selective detection of ammonia for urea injection control in diesel exhausts and toxic volatile organic compounds for indoor air quality monitoring and control are given.

Place, publisher, year, edition, pages
Oxford: Woodhead Publishing Limited, 2020 Edition: 2
Series
Woodhead Publishing Series in Electronic and Optical Materials
Keywords
Gas sensors, field-effect gas sensors, semiconductor gas sensors, VOC, harsh environment
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-161059 (URN)10.1016/B978-0-08-102559-8.00010-0 (DOI)9780081025598 (ISBN)
Available from: 2019-10-18 Created: 2019-10-18 Last updated: 2019-12-06Bibliographically approved
Bastuck, M., Puglisi, D., Lloyd Spetz, A., Schuetze, A., Sauerwald, T. & Andersson, M. (2018). UV-assisted gate bias cycling in gas-sensitive field-effect transistors. Paper presented at EUROSENSORS 2018. Proceedings, 2(13), Article ID 999.
Open this publication in new window or tab >>UV-assisted gate bias cycling in gas-sensitive field-effect transistors
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2018 (English)In: Proceedings, ISSN 2504-3900, Vol. 2, no 13, article id 999Article in journal (Refereed) Published
Abstract [en]

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

Place, publisher, year, edition, pages
MDPI, 2018
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-162239 (URN)10.3390/proceedings2130999 (DOI)
Conference
EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2020-01-14Bibliographically approved
Hasegawa, Y., Puglisi, D. & Lloyd Spetz, A. (2017). Development of Agriculture Support System Using Plant Bioelectric Potential Responses and Gas Sensor. International Journal of Food and Biosystems Engineering, 5(1), 44-51
Open this publication in new window or tab >>Development of Agriculture Support System Using Plant Bioelectric Potential Responses and Gas Sensor
2017 (English)In: International Journal of Food and Biosystems Engineering, ISSN 2408-0675, Vol. 5, no 1, p. 44-51Article in journal (Refereed) Published
Abstract [en]

In this study,we focus on the plant bioelectric potential response as a low-cost and a high sensitivity evaluation technique of plant physiological activities for an agriculture support system. We developed a cultivation light intensity control system using bioelectric potential response. This system contributes to improvement of the cultivation environment and provides energy saving effect.In addition, we introduced a field effect transistor based on silicon carbide (SiC-FET)gas sensor and evaluated the characteristics of the sensor by changing several parameters. The results showed that iridium gated SiC-FET sensor has high sensitivity to ethylene,and the highest response is achieved at 200 ◦C. We aim at the development of an agriculture support system, which combines the plant bioelectrical potential and the SiC-FET gas sensor response.

Keywords
Field effect transistor, gas sensor, plant bioelectric potential, plant factory, agriculture support system, cultivation environment control, physiological activities of plant, ethylene
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-162231 (URN)
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-02Bibliographically approved
Hasegawa, Y., Ishida, R., Puglisi, D. & Lloyd Spetz, A. (2017). Development of ethylene gas sensor for evaluating fruit ripening. In: : . Paper presented at European Advanced Materials Congress 2017.
Open this publication in new window or tab >>Development of ethylene gas sensor for evaluating fruit ripening
2017 (English)Conference paper, Poster (with or without abstract) (Refereed)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-162245 (URN)
Conference
European Advanced Materials Congress 2017
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-06Bibliographically approved
Bastuck, M., Puglisi, D., Möller, P., Reimringer, W., Schuetze, A., Lloyd Spetz, A. & Andersson, M. (2017). Low-cost chemical gas sensors for selective formaldehyde quantification at ppb-level in field tests. In: : . Paper presented at AMA Conferences 2017 - Sensor 2017 and IRS2 2017, Germany, 30 May - 1 June, 2017 (pp. 702-707).
Open this publication in new window or tab >>Low-cost chemical gas sensors for selective formaldehyde quantification at ppb-level in field tests
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2017 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Data from a silicon carbide based field-effect transistor were recorded over a period of nine days in a ventilated school room. For enhanced sensitivity and selectivity especially to formaldehyde, porous iridium on pulsed laser deposited tungsten trioxide was used as sensitive layer, in combination with temperature cycled operation and subsequent multivariate data processing techniques. The sensor signal was compared to reference measurements for formaldehyde concentration, CO2 concentration, temperature, and relative humidity. The results show a distinct pattern for the reference formaldehyde concentration, arising from the day/night cycle. Taking this into account, the projections of both principal component analysis and partial least squares regression lead to almost the same result concerning correlation to the reference. The sensor shows cross-sensitivity to an unidentified component of human activity, presumably breath, and, possibly, to other compounds appearing together with formaldehyde in indoor air. Nevertheless, the sensor is able to detect and partially quantify formaldehyde below 40 ppb with a correlation to the reference of 0.48 and negligible interference from ambient temperature or relative humidity.

Keywords
SiC-FET, multivariate data processing, indoor air quality, VOC, sick building syndrome
National Category
Engineering and Technology Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-162246 (URN)
Conference
AMA Conferences 2017 - Sensor 2017 and IRS2 2017, Germany, 30 May - 1 June, 2017
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-06Bibliographically approved
Erdtman, E., Andersson, M., Lloyd Spetz, A. & Ojamäe, L. (2017). Simulations of the thermodynamics and kinetics of NH3 at the RuO2 (110) surface. Surface Science, 656, 77-85
Open this publication in new window or tab >>Simulations of the thermodynamics and kinetics of NH3 at the RuO2 (110) surface
2017 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 656, p. 9p. 77-85Article in journal (Refereed) Published
Abstract [en]

Ruthenium(IV)oxide (RuO2) is a material used for various purposes. It acts as a catalytic agent in several reactions, for example oxidation of carbon monoxide. Furthermore, it is used as gate material in gas sensors. In this work theoretical and computational studies were made on adsorbed molecules on RuO2 (110) surface, in order to follow the chemistry on the molecular level. Density functional theory calculations of the reactions on the surface have been performed. The calculated reaction and activation energies have been used as input for thermodynamic and kinetics calculations. A surface phase diagram was calculated, presenting the equilibrium composition of the surface at different temperature and gas compositions. The kinetics results are in line with the experimental studies of gas sensors, where water has been produced on the surface, and hydrogen is found at the surface which is responsible for the sensor response.

Place, publisher, year, edition, pages
Elsevier, 2017. p. 9
Keywords
Catalysis; Kinetics; Ruthenium dioxide; Sensor; Surface; Thermodynamics
National Category
Analytical Chemistry
Identifiers
urn:nbn:se:liu:diva-133425 (URN)10.1016/j.susc.2016.10.006 (DOI)000390969300012 ()
Available from: 2016-12-28 Created: 2016-12-28 Last updated: 2018-11-26
Alene Asres, G., Dombovari, A., Sipola, T., Puskas, R., Kukovecz, A., Konya, Z., . . . Kordas, K. (2016). A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor. Scientific Reports, 6(25610)
Open this publication in new window or tab >>A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor
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2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, no 25610Article in journal (Refereed) Published
Abstract [en]

In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative temperature coefficient of resistance indicating that the hybrids are of semiconducting nature. Bottom gated field effect transistor structures based on random networks of the hybrids show only minor modulation of the channel conductance upon applied gate voltage, which indicates poor electrical transport between the nanowires in the random films. On the other hand, the photo response of channel current holds promise for cost-efficient solution process fabrication of photodetector devices working in the visible spectral range.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP, 2016
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-129162 (URN)10.1038/srep25610 (DOI)000375897000001 ()27180902 (PubMedID)
Note

Funding Agencies|OTKA [K 112531, NN 110676]; Oulu University Graduate School (Infotech programme); Academy of Finland (projects Optifu, HyNa and Suplacat); EU-FP7 (projects Susfoflex and HiPPoCaMP)

Available from: 2016-06-13 Created: 2016-06-13 Last updated: 2017-11-28
Puglisi, D., Eriksson, J., Andersson, M., Huotari, J., Bastuck, M., Bur, C., . . . Lloyd Spetz, A. (2016). Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors. Paper presented at 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015. Materials Science Forum, 858, 997-1000
Open this publication in new window or tab >>Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 997-1000Article in journal (Refereed) Published
Abstract [en]

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keywords
Field Effect Transistor, Gas Sensor, Iridium/Tungsten Trioxide, Benzene, 4H-SiC
National Category
Environmental Engineering
Identifiers
urn:nbn:se:liu:diva-124153 (URN)10.4028/www.scientific.net/MSF.858.997 (DOI)
Conference
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
Projects
SENSIndoor, www.sensindoor.eu
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2016-01-20 Created: 2016-01-20 Last updated: 2020-02-17
Sobocinski, M., Myllymäki, S., Nello, M., Andersson, M., Juuti, J., Kilpijärvi, J., . . . Lloyd Spetz, A. (2016). Laser shaped thick-film IDE for nanoparticle detection at high frequencies. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>Laser shaped thick-film IDE for nanoparticle detection at high frequencies
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129118 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Kilpijärvi, J., Sobocinski, M., Halonen, N., Hassinen, A., Prakash, S. B., Möller, P., . . . Lloyd Spetz, A. (2016). LTCC packaging for lab-on-CMOS applied in cell viability monitoring. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>LTCC packaging for lab-on-CMOS applied in cell viability monitoring
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Poster (with or without abstract) (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129119 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-2817-3574

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