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Alene Asres, G., Dombovari, A., Sipola, T., Puskas, R., Kukovecz, A., Konya, Z., . . . Kordas, K. (2016). A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor. Scientific Reports, 6(25610)
Open this publication in new window or tab >>A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor
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2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, no 25610Article in journal (Refereed) Published
Abstract [en]

In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative temperature coefficient of resistance indicating that the hybrids are of semiconducting nature. Bottom gated field effect transistor structures based on random networks of the hybrids show only minor modulation of the channel conductance upon applied gate voltage, which indicates poor electrical transport between the nanowires in the random films. On the other hand, the photo response of channel current holds promise for cost-efficient solution process fabrication of photodetector devices working in the visible spectral range.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP, 2016
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-129162 (URN)10.1038/srep25610 (DOI)000375897000001 ()27180902 (PubMedID)
Note

Funding Agencies|OTKA [K 112531, NN 110676]; Oulu University Graduate School (Infotech programme); Academy of Finland (projects Optifu, HyNa and Suplacat); EU-FP7 (projects Susfoflex and HiPPoCaMP)

Available from: 2016-06-13 Created: 2016-06-13 Last updated: 2017-11-28
Puglisi, D., Eriksson, J., Andersson, M., Huotari, J., Bastuck, M., Bur, C., . . . Lloyd Spetz, A. (2016). Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors. Paper presented at 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015. Materials Science Forum, 858, 997-1000
Open this publication in new window or tab >>Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 997-1000Article in journal (Refereed) Published
Abstract [en]

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keyword
Field Effect Transistor, Gas Sensor, Iridium/Tungsten Trioxide, Benzene, 4H-SiC
National Category
Environmental Engineering
Identifiers
urn:nbn:se:liu:diva-124153 (URN)10.4028/www.scientific.net/MSF.858.997 (DOI)
Conference
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
Projects
SENSIndoor, www.sensindoor.eu
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2016-01-20 Created: 2016-01-20 Last updated: 2017-11-30
Sobocinski, M., Myllymäki, S., Nello, M., Andersson, M., Juuti, J., Kilpijärvi, J., . . . Lloyd Spetz, A. (2016). Laser shaped thick-film IDE for nanoparticle detection at high frequencies. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>Laser shaped thick-film IDE for nanoparticle detection at high frequencies
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129118 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Kilpijärvi, J., Sobocinski, M., Halonen, N., Hassinen, A., Prakash, S. B., Möller, P., . . . Lloyd Spetz, A. (2016). LTCC packaging for lab-on-CMOS applied in cell viability monitoring. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>LTCC packaging for lab-on-CMOS applied in cell viability monitoring
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Poster (with or without abstract) (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129119 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Eriksson, J., Puglisi, D., Strandqvist, C., Gunnarsson, R., Ekeroth, S., Ivanov, I. G., . . . Lloyd Spetz, A. (2016). Modified Epitaxial Graphene on SiC for Extremely Sensitive andSelective Gas Sensors. Paper presented at ICSCRM 2015, The International Conference on Silicon Carbide and Related Materials, 4-9 October 2015, Giardini Naxos, Italy. Materials Science Forum, 858, 1145-1148
Open this publication in new window or tab >>Modified Epitaxial Graphene on SiC for Extremely Sensitive andSelective Gas Sensors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 1145-1148Article in journal (Refereed) Published
Abstract [en]

Two-dimensional materials offer a unique platform for sensing where extremely high sensitivity is a priority, since even minimal chemical interaction causes noticeable changes inelectrical conductivity, which can be used for the sensor readout. However, the sensitivity has to becomplemented with selectivity, and, for many applications, improved response- and recovery times are needed. This has been addressed, for example, by combining graphene (for sensitivity) with metal/oxides (for selectivity) nanoparticles (NP). On the other hand, functionalization or modification of the graphene often results in poor reproducibility. In this study, we investigate thegas sensing performance of epitaxial graphene on SiC (EG/SiC) decorated with nanostructured metallic layers as well as metal-oxide nanoparticles deposited using scalable thin-film depositiontechniques, like hollow-cathode pulsed plasma sputtering. Under the right modification conditions the electronic properties of the surface remain those of graphene, while the surface chemistry can betuned to improve sensitivity, selectivity and speed of response to several gases relevant for airquality monitoring and control, such as nitrogen dioxide, benzene, and formaldehyde.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keyword
Epitaxial graphene, graphene hybrid materials, gas sensor
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-128078 (URN)10.4028/www.scientific.net/MSF.858.1145 (DOI)
Conference
ICSCRM 2015, The International Conference on Silicon Carbide and Related Materials, 4-9 October 2015, Giardini Naxos, Italy
Available from: 2016-05-16 Created: 2016-05-16 Last updated: 2018-03-26
Andersson, M., Bastuk, M., Huotari, J., Puglisi, D., Schütze, A., Lappalainen, J. & Lloyd Spetz, A. (2016). Optimization of the Field Effect Transistor transducer platform for the development of air quality sensors. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>Optimization of the Field Effect Transistor transducer platform for the development of air quality sensors
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129120 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Eriksson, J., Puglisi, D., Yakimova, R. & Lloyd Spetz, A. (2016). SiC-2D-material-hybrids as a Platform for Extremely Sensitive and Selective Gas Sensors. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>SiC-2D-material-hybrids as a Platform for Extremely Sensitive and Selective Gas Sensors
2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129121 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Huotari, J., Lappalainen, J., Eriksson, J., Bjorklund, R., Heinonen, E., Miinalainen, I., . . . Lloyd Spetz, A. (2016). Synthesis of nanostructured solid-state phases of V7O16 and V2O5 compounds for ppb-level detection of ammonia. Journal of Alloys and Compounds, 675, 433-440
Open this publication in new window or tab >>Synthesis of nanostructured solid-state phases of V7O16 and V2O5 compounds for ppb-level detection of ammonia
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2016 (English)In: Journal of Alloys and Compounds, ISSN 0925-8388, E-ISSN 1873-4669, Vol. 675, p. 433-440Article in journal (Refereed) Published
Abstract [en]

Solid state phase of V7O16 with separate V2O5 phase were fabricated by pulsed laser deposition. The crystal structure and symmetry of the deposited films were studied with X-ray diffraction and Raman spectroscopy, respectively. Rietveld analysis was performed to the X-ray diffraction measurement results. The surface potentials and morphologies of the films were studied with atomic force microscopy, and microstructure of the thin films was analysed by transmission electron microscopy. Raman spectroscopy and Rietveld refinement results confirmed that the thin-film crystal structures varied between orthorombic V2O5 phase and another phase, triclinic V2016, previously found only in the walls of vanadium oxide nanotubes (VOx, -NT), bound together with organic amine. We have earlier presented the first results of stable and pure metal -oxide solid-state phase of V2016 manufactured from ceramic V205 target. Here we show more detailed study of these structures. The microstructure studies showed a variation on the porosity of the films according to crystal structures and also some fibre -like nanostructures were found in the films. The surface morphology depended strongly on the crystal structure and the surface potential studies showed 50 meV difference in the work function values between the phases. Compounds were found to be extremely sensitive towards ammonia, NH3, down to 40 ppb concentrations, and have shown to have the stability and selectivity to control the Selective Catalytic Reduction process, where nitrogen oxides are reduced by ammonia in, e.g. diesel exhausts.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA, 2016
Keyword
Vanadium oxides; Mixed phase; V7O16; V2O5; Thin film
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-127542 (URN)10.1016/j.jallcom.2016.03.116 (DOI)000373614400059 ()
Note

Funding Agencies|Finnish Funding Agency for Innovations - TEKES project CHEMPACK [1427/31/2010]; Tauno Tonning foundation; Henry Ford foundation; Ulla Tuominen Foundation; Riitta and Jorma J. Takanen foundation; Swedish Research Council

Available from: 2016-05-04 Created: 2016-05-03 Last updated: 2017-11-30
Huotari, J., Lappalainen, J., Puustinen, J., Baur, T., Alepee, C., Haapalainen, T., . . . Lloyd Spetz, A. (2015). Agglomerates, and Nanotrees for Chemical Sensors. In: Proceeding Eurosensors 2015: . Paper presented at Eurosensors 2015 (pp. 1265-1268).
Open this publication in new window or tab >>Agglomerates, and Nanotrees for Chemical Sensors
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2015 (English)In: Proceeding Eurosensors 2015, 2015, p. 1265-1268Conference paper, Poster (with or without abstract) (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129111 (URN)
Conference
Eurosensors 2015
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Puglisi, D., Eriksson, J., Bur, C., Schuetze, A., Lloyd Spetz, A. & Andersson, M. (2015). Catalytic metal-gate field effect transistors based on SiC for indoor air quality control. Paper presented at E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014. Journal of Sensors and Sensor Systems, 4, 1-8
Open this publication in new window or tab >>Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
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2015 (English)In: Journal of Sensors and Sensor Systems, ISSN 2194-8771, Vol. 4, p. 1-8Article in journal (Refereed) Published
Abstract [en]

High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoorair quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330° C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Place, publisher, year, edition, pages
Germany: Copernicus, 2015
Keyword
silicon carbide, field effect transistor, volatile organic compounds, air quality control
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
urn:nbn:se:liu:diva-113295 (URN)10.5194/jsss-4-1-2015 (DOI)
Conference
E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014
Projects
SENSIndoor (grant agreement no. 604311)
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2015-01-15 Created: 2015-01-15 Last updated: 2015-01-21Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-2817-3574

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