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Larsson, Mats
Publications (10 of 51) Show all publications
Larsson, L. A., Larsson, M., Moskalenko, E. S. & Holtz, P.-O. (2010). Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot. NANOSCALE RESEARCH LETTERS, 5(7), 1150-1155
Open this publication in new window or tab >>Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot
2010 (English)In: NANOSCALE RESEARCH LETTERS, ISSN 1931-7573, Vol. 5, no 7, p. 1150-1155Article in journal (Refereed) Published
Abstract [en]

Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.

Place, publisher, year, edition, pages
Springer Science Business Media, 2010
Keywords
Quantum dot; Wetting layer; Magnetic field; Temperature dependence; Charge state
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-58223 (URN)10.1007/s11671-010-9618-x (DOI)000279674400012 ()
Note
The original publication is available at www.springerlink.com: L. Arvid Larsson, Mats Larsson, E. S. Moskalenko and Per-Olof Holtz, Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot, 2010, NANOSCALE RESEARCH LETTERS, (5), 7, 1150-1155. http://dx.doi.org/10.1007/s11671-010-9618-x Copyright: Springer Science Business Media http://www.springerlink.com/ Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2011-02-03Bibliographically approved
Moskalenko, E., Larsson, A., Larsson, M., Holtz, P.-O., Schoenfeld, W. V. & Petroff, P. M. (2009). Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots. Nano letters (Print), 9(1), 353-359
Open this publication in new window or tab >>Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots
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2009 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 9, no 1, p. 353-359Article in journal (Refereed) Published
Abstract [en]

We report on magneto-photoluminescence studies of InAs/GaAs quantum dots (QDs) of considerably different densities, from dense ensembles down to individual dots. It is found that a magnetic field applied in Faraday geometry decreases the photoluminescence (PL) intensity of OD ensembles, which is not accompanied by the corresponding increase of PL signal of the wetting layer on which ON are grown. The model suggested to explain these data assumes considerably different strengths of suppression of electron and hole fluxes by a magnetic field. This idea has been successfully checked in experiments on individual ON, where the PL spectra allow to directly monitor the charge state of a OD and, hence, to conclude about relative magnitudes of electron and hole fluxes toward the QD. Comparative studies of different individual QDs have revealed that the internal electric field in the sample (which was altered in the experiments in a controllable way) together with an external magnetic field will determine the charge state and emission intensity of the QDs.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-16615 (URN)10.1021/nl803148q (DOI)
Available from: 2009-02-07 Created: 2009-02-06 Last updated: 2017-12-14Bibliographically approved
Larsson, A., Moskalenko, E., Larsson, M. & Holtz, P.-O. (2009). Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields. In: IEEE Nano 2009 in Genua.
Open this publication in new window or tab >>Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields
2009 (English)In: IEEE Nano 2009 in Genua, 2009Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-50824 (URN)
Available from: 2009-10-14 Created: 2009-10-14 Last updated: 2009-10-17
Larsson, A., Larsson, M., Holtz, P.-O. & Moskalenko, E. (2009). Magnetic field enabled charge state control of single InAs/GaAs quantum dots. In: 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 (pp. 510-512).
Open this publication in new window or tab >>Magnetic field enabled charge state control of single InAs/GaAs quantum dots
2009 (English)In: 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, 2009, p. 510-512Conference paper, Published paper (Refereed)
Abstract [en]

Micro-photoluminescence in the presence of an external magnetic field is employed to study individual InAs/GaAs quantum dots (QDs). By varying the strength of the applied magnetic field, the charge state of the QD is tuned from a double negatively charged exciton to a neutral exciton. This effect is shown to be related to carrier transport in the QD-plane prior to capture into the QD. The temperature dependence of the tuning effect is discussed. © 2009 IEEE NANO Organizers.

Keywords
Faraday; Magnetic field; Photoluminescence; Quantum dot; Transport; Voigt
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-57052 (URN)
Available from: 2010-06-11 Created: 2010-06-09 Last updated: 2011-01-27
Larsson, A., Moskalenko, E., Larsson, M. & Holtz, P.-O. (2009). Tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields. In: Nordic Semiconductor Meeting. Reykavik
Open this publication in new window or tab >>Tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields
2009 (English)In: Nordic Semiconductor Meeting, Reykavik, 2009Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Reykavik: , 2009
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-50819 (URN)
Available from: 2009-10-14 Created: 2009-10-14 Last updated: 2009-10-17
Larsson, A., Moskalenko, E., Larsson, M. & Holtz, P.-O. (2008). Charge state control of single InAs/GaAs quantum dots by means of an external magnetic field. In: in PHYSICS OF SEMICONDUCTORS, vol 1199: . Paper presented at ICPS 29th International Conference on the Physics of Semiconductors,2008 (pp. 297-298). AIP
Open this publication in new window or tab >>Charge state control of single InAs/GaAs quantum dots by means of an external magnetic field
2008 (English)In: in PHYSICS OF SEMICONDUCTORS, vol 1199, AIP , 2008, p. 297-298Conference paper, Published paper (Refereed)
Abstract [en]

Individual InAs/GaAs quantum dots (QDs) are studied with micro-photoluminescence in the presence of an applied external magnetic field. Attention is focused on the redistribution between the spectral lines of a single QD observed at increased external magnetic field when the magnetic field is applied parallel to the growth direction (Faraday geometry). The effect is shown to be transport related as the electron drift velocity in the QD-plane is decreased by the applied magnetic field and this affects the probability for electron capture into the QD.

Place, publisher, year, edition, pages
AIP, 2008
Keywords
quantum dot, photoluminescence, magnetic field, Faraday, Voigt, transport
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-44292 (URN)10.1063/1.3295418 (DOI)000281590800140 ()76185 (Local ID)978-073540736-7 (ISBN)76185 (Archive number)76185 (OAI)
Conference
ICPS 29th International Conference on the Physics of Semiconductors,2008
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-08-27
Larsson, A., Moskalenko, E., Larsson, M. & Holtz, P.-O. (2008). Charge state tuning of individual InAs/GaAs quantum dots by an external magnetic field. In: 8th International Conference on Physics of Light-Matter Coupling in nanostructures PLMCN8,2008.
Open this publication in new window or tab >>Charge state tuning of individual InAs/GaAs quantum dots by an external magnetic field
2008 (English)In: 8th International Conference on Physics of Light-Matter Coupling in nanostructures PLMCN8,2008, 2008Conference paper, Published paper (Other academic)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-43341 (URN)73565 (Local ID)73565 (Archive number)73565 (OAI)
Available from: 2009-10-10 Created: 2009-10-10
Moskalenko, E., Larsson, A., Larsson, M., Holtz, P.-O., Schoenfeld, W. V. & Petroff, P. M. (2008). Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field. Physical Review B. Condensed Matter and Materials Physics, 78(7), 075306
Open this publication in new window or tab >>Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field
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2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 7, p. 075306-Article in journal (Refereed) Published
Abstract [en]

A microphotoluminescence study of single InAs/GaAs quantum dots (QDs) in the presence of an applied external magnetic field is presented. Attention is focused on the redistribution between the spectral lines of a single QD observed at increasing magnetic field parallel to the growth direction (Faraday geometry). The redistribution effect is explained by considering the electron drift velocity in the QD plane that affects the probability for capture into the QD. In contrast, no redistribution is observed when applying the magnetic field perpendicular to the growth direction (Voigt geometry).

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-16333 (URN)10.1103/PhysRevB.78.075306 (DOI)
Note

Original Publication: Evgenii Moskalenko, Andréas Larsson, Mats Larsson, Per-Olof Holtz, W. V. Schoenfeld and P. M. Petroff, Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field, 2008, Physical Review B Condensed Matter, (78), 075306. http://dx.doi.org/10.1103/PhysRevB.78.075306 Copyright: American Physical Society http://www.aps.org/

Available from: 2009-01-15 Created: 2009-01-15 Last updated: 2017-12-14Bibliographically approved
Moskalenko, E., Larsson, A., Larsson, M., Holtz, P.-O., Schoenfeld, W. & Petroff, P. (2008). Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields. In: One Day Quantum Dot Meeting,2008.
Open this publication in new window or tab >>Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields
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2008 (English)In: One Day Quantum Dot Meeting,2008, 2008Conference paper, Published paper (Other academic)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-43340 (URN)73564 (Local ID)73564 (Archive number)73564 (OAI)
Available from: 2009-10-10 Created: 2009-10-10
Holtz, P.-O., Moskalenko, E., Larsson, M., Karlsson, F., Schoenfeld, W. & Petroff, P. (2008). Effects of External Fields on the Excitonic Emission from Single InAs/GaAs Quantum Dots. In: Microelectronics Journal, Vol. 39: . Paper presented at The 6th International Conference on Low Dimensional Structures and Devices,2007 (pp. 331-334). Microelectronics Journal: Elsevier
Open this publication in new window or tab >>Effects of External Fields on the Excitonic Emission from Single InAs/GaAs Quantum Dots
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2008 (English)In: Microelectronics Journal, Vol. 39, Microelectronics Journal: Elsevier , 2008, p. 331-334Conference paper, Published paper (Refereed)
Abstract [en]

A low-temperature micro-photoluminescence (μ-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The internal field in the vicinity of the dots could be altered by means of an additional infra-red laser. We propose a model, which is based on an essentially faster lateral transport of the charge carriers achieved in an external electric field. Consequently, also the capture probability into the dots and subsequently the dot luminescence is also enhanced. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment.

Place, publisher, year, edition, pages
Microelectronics Journal: Elsevier, 2008
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-39927 (URN)10.1016/j.mejo.2007.07.007 (DOI)51702 (Local ID)51702 (Archive number)51702 (OAI)
Conference
The 6th International Conference on Low Dimensional Structures and Devices,2007
Note

in press

Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-01-23
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