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Chen, Miaoxiang
Alternative names
Publications (10 of 24) Show all publications
Muhammad, R., Song, J., Nour, O., Wang, Z. & Willander, M. (2008). Experimental and finite element method calculation of piezoelectric power generation from ZnO nanowire arrays grown on different substrates using high and low temperature methods. , 104(10)
Open this publication in new window or tab >>Experimental and finite element method calculation of piezoelectric power generation from ZnO nanowire arrays grown on different substrates using high and low temperature methods
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2008 (English)Manuscript (preprint) (Other academic)
Abstract [en]

In this paper we investigate the piezoelectric power generation from ZnO nanowire arrays grown using different methods. The ZnO nanowires are grown on n-SiC and n-Si substrates using both the high-temperature vapor liquid solid (VLS) and the lowtemperature aqueous chemical growth (ACG) methods. A conductive atomic force microscope (AFM) is used in contact mode to deflect the ZnO nanowire arrays. A piezoelectric potential across the nanowires is produced and then released via the rectifying behavior of the Schottky barrier at the platinum metal-ZnO interface. We do not observe any substrate effect but the growth method, crystal quality, density, length and diameter (aspect ratio) of the nanowires are found to affect the piezoelectric behavior. These parameters can significantly affect the performance manifested in the observed output voltage signal. Based on these parameters, we compare four nanogenerators under identical conditions. During the AFM scanning in contact mode without biased voltage, the ZnO nanowire arrays grown by the VLS method produce higher and larger output voltage signal of 35 mV compared to ZnO nanowires arrays grown by the ACG method, which produce smaller output voltage signal of 5 mV. We apply finite element (FE) method calculations to investigate the output voltage of ZnO nanowires based nanogenerators with different aspects ratios. From FE results we find that the output voltage of the nanogenerator is decreased above an aspect ratio 80 of ZnO nanowires.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-65404 (URN)
Available from: 2011-02-07 Created: 2011-02-07 Last updated: 2014-01-15Bibliographically approved
Muhammad, R., Chen, S., Chen, M., Buyanova, I. ., Jensen, J., Nour, O. & Willander, M. (2008). The impact of ion irradiation on morphology, structure and optical properties of ZnO nanowires. , 104(10)
Open this publication in new window or tab >>The impact of ion irradiation on morphology, structure and optical properties of ZnO nanowires
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2008 (English)Manuscript (preprint) (Other academic)
Abstract [en]

Chemically grown ZnO nanowires were irradiated with ions and subsequently investigated by continues wave (cw) photoluminescence (PL) and time resolved PL (TRPL) both at room (300 K) and low (10 K) temperatures, and was compared with the as-grown samples. The ion bombardment was done by using 30 keV argon, and 40 MeV iodine ions using ion fluencies of 3 ×1016 ions/cm2, and 1.3 ×1013 ions/cm2, respectively. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) spectra showed that the morphology and structure of the ion irradiated ZnO nanowires were less damaged. Using the PL and XRD spectra the induced compressive strains in the irradiated samples was calculated. Also there was a decrease and increase in the XRD intensity which had emphasized that some texture modification occurred in the irradiated samples. No severe decomposition of the irradiated samples was observed. The PL measurements showed that the intensity of the near band emission (free exciton) of the irradiated ZnO nanowires was decreased for all irradiating ions, whereas the deep emission band was enhanced for iodine ions and suppressed for argon ions irradiated samples. A blue peak shift (~ 2 meV) of the excitonic emission of the irradiated samples was observed. The TRPL spectra for the as-grown and the irradiated ZnO nanowires were fitted with single and two components time decay constant, respectively.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-65402 (URN)
Available from: 2011-02-07 Created: 2011-02-07 Last updated: 2014-01-15Bibliographically approved
Uhlig, S., Frohlich, L., Chen, M., Arndt-Staufenbiel, N., Lang, G., Schroder, H., . . . Robertsson, M. (2006). Polymer optical interconnects - A scalable large-area panel processing approach. IEEE Transactions on Advanced Packaging, 29(1), 158-170
Open this publication in new window or tab >>Polymer optical interconnects - A scalable large-area panel processing approach
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2006 (English)In: IEEE Transactions on Advanced Packaging, ISSN 1521-3323, E-ISSN 1557-9980, Vol. 29, no 1, p. 158-170Article in journal (Refereed) Published
Abstract [en]

A flexible approach to producing optical interconnects on 609.6 * 609.6 mm large-area panels is demonstrated. Stepwise projection patterning from 101.6 * 101.6 mm masks has generated optical waveguide patterns over the whole panel using large-area projection lithography equipment. The waveguide routing design allows optical waveguides on different 101.6 * 101.6 mm tiles to be interconnected. Four different waveguide connecting geometries in the border region between tiles have been fabricated and tested. Multimode waveguides from inorganic-organic hybrid polymers (ORMOCER) (cross section: = 50 µm * 10 µm) with refractive index step between core and cladding ?n = 0.01 were produced. The index step was adjusted by mixing two diffrent ORMOCER systems. The materials show good adhesion to numerous substrates, such as glass and silicon. Application concepts such as flexible manufacturing of optoelectrical hybrid backplanes with two-dimensional interconnect, a three-dimensional optical interconnect with optical vias, and a hybrid backplane with the optical interconnect in a strip-format on a separate plane right above the electrical plane are proposed. Promising new technologies are presented along with preliminary demonstrativ viability. © 2006 IEEE.

Keywords
Flexible manufacturing approach, Hybrid polymers, Large-area processing, Optical backplane, Optical interconnect review, ORMOCER, Polymer optical waveguide, Projection UV lithogaphy
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-50305 (URN)10.1109/TADVP.2005.849555 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12
Chen, M. (2006). Threshold-voltage tuning characteristics of all-organic electrochemical vertical rectifiers on flexible substrates. IEEE Electron Device Letters, 27(4), 243-245
Open this publication in new window or tab >>Threshold-voltage tuning characteristics of all-organic electrochemical vertical rectifiers on flexible substrates
2006 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 27, no 4, p. 243-245Article in journal (Refereed) Published
Abstract [en]

A printed all-organic electrochemical vertical tunable rectifier is demonstrated using a conducting polymer as the active material on a flexible plastic substrate. Solution processable poly(3,4-ethylenedioxythiophene) combined with poly(styrene sulfonic acid) (PEDOT:PSS) was coated on polyester film, the rectifier channel was patterned on the PEDOT:PSS film through directly writing technique without the need for masks, patterns, or dies. A vertically layered electrochemical cell was structured via printing and laminating processes to reduce driving voltages. The resulting rectifier is a three-terminal device, the functionality of threshold voltage tuning is realized by adjusting the potential difference within the electrochemical cell. The driving voltages are reduced significantly compared to rectifiers with lateral device architecture. In a single device, the threshold voltage is tunable between 0.16 and 1.0 V while a bias voltage is swept from 0.9 to 1.7 V. © 2006 IEEE.

Keywords
Conducting polymer, Electrochemistry, Flextronics, Poly(3, 4-ethylenedioxythiophene) (PEDOT), Printing electronics, Tunable device
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-50251 (URN)10.1109/LED.2006.871850 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12
Chen, M. (2005). Electrochemical and electronic devices based on low bandgap polymers. (Doctoral dissertation). Linköping: Linköping University Electronic Press
Open this publication in new window or tab >>Electrochemical and electronic devices based on low bandgap polymers
2005 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The research field of the organic electronics includes light emitting diodes (OLEDs), field-effect transistors (OFETs), polymer photovoltaic cells (PVCs), polymer lasers and electrochemical devices. Recently, organic materials are envisaged for spintronics. This dissertation covers a large research scope ranging from electrochemical devices, light emitting diodes, to field-effect transistors, in both processing techniques and device characterizations.

Printed all-organic electrochemical diodes and transistors on flexible plastic or paper substrates have been realized by simple and low-cost method of fabricating. Conducting polymer poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT:PSS), utilized as active component, is deposited by spin-coating or printing techniques. The devices are directly fabricated from design without the need for masks, patterns or dies. The output characteristics of both half-wave and full-wave rectifier circuits from two-terminal diodes show stable performances at frequencies of 5 Hz. Electrochemical transistors based on both three- and four-terminal configurations have good performances with IONlIoFF current ratios of 103 - 104 at operating voltages below 3 V. The new kind of devices reported are robust and could serve as components in microelectronics, and as redox sensors and detectors since the conductivity of conducting polymers depends on the redox states.

Both LEDs and FETs are realized from a low bandgap donor-acceptor-donor (D-A-D) polymer. The polymer consists of fluorene units and donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of 1.27 eV. The corresponding electro- and photoluminescence spectra both peak at approximately 1 Ilm, which is largest emission wavelength ever reported to date. The resulting FETs exhibit typical p-channel functions, and relatively high field-effect mobility of 0.03 cm2y-1s-1, near zero threshold voltage and a current on/off ratio of 5 x104 in ambient atmosphere. The mobility value is highest in low bandgap D-A-D polymers ever reported so far.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2005. p. 79
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 916
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-38775 (URN)45585 (Local ID)91-85297-09-7 (ISBN)45585 (Archive number)45585 (OAI)
Public defence
2005-05-12, K3, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:00 (English)
Opponent
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2012-12-07Bibliographically approved
Chen, M., Crispin, X., Perzon, E., Andersson, M. R., Pullerits, T., Andersson, M., . . . Berggren, M. (2005). High carrier mobility in low band gap polymer-based field-effect transistors. Applied Physics Letters, 87(25), 252105-1-252105-3
Open this publication in new window or tab >>High carrier mobility in low band gap polymer-based field-effect transistors
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 25, p. 252105-1-252105-3Article in journal (Refereed) Published
Abstract [en]

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V−1 s−1.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-34581 (URN)10.1063/1.2142289 (DOI)22029 (Local ID)22029 (Archive number)22029 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13
CHEN, M. (2005). Printed Electrochemical Devices Using Conducting Polymers as Active Materials on Flexible Substrates. In: Proceedings of the IEEE (pp. 1339-1347). IEEE conference proceedings
Open this publication in new window or tab >>Printed Electrochemical Devices Using Conducting Polymers as Active Materials on Flexible Substrates
2005 (English)In: Proceedings of the IEEE, IEEE conference proceedings, 2005, p. 1339-1347Conference paper, Published paper (Refereed)
Abstract [en]

This paper reports some of our initial works in pursuit of a simple and low-cost method of fabricating all-organic electrochemical diodes, triodes, and transistors on flexible plastic or paper substrates. Conducting polymer poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT : PSS), utilized as an active component, is deposited by spin-coating or printing techniques. The devices are directly fabricated from design without the need for masks, patterns, or dies. The output characteristics of both half-wave and full-wave rectifier circuits from two-terminal diodes show stable performances at frequencies below 5 Hz. In three-terminal tunable triodes, threshold voltage can be tuned in the range between 0.25 and 1.6 V. In four-terminal transistors, ambipolar operation function can be realized in one single device. ION/IOFF current ratios of 103-104 have been achieved in the triode and transistor at operating voltages below 3 V. In addition, the device applications in electrochromic displays, logical circuits, as well as the switching speed of the circuits and device stability, are discussed.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2005
Series
Proceedings of the IEEE, ISSN 0018-9219 ; 93
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-73408 (URN)10.1109/JPROC.2005.851532 (DOI)
Available from: 2012-01-03 Created: 2012-01-03
Chen, M. (2005). Printed electrochemical devices using conducting polymers as active materials on flexible substrates. Proceedings of the IEEE, 93(7), 1339-1347
Open this publication in new window or tab >>Printed electrochemical devices using conducting polymers as active materials on flexible substrates
2005 (English)In: Proceedings of the IEEE, ISSN 0018-9219, E-ISSN 1558-2256, Vol. 93, no 7, p. 1339-1347Article in journal (Refereed) Published
Abstract [en]

This paper reports some of our initial works in pursuit of a simple and low-cost method of fabricating all-organic electrochemical diodes, triodes, and transistors on flexible plastic or paper substrates. Conducting polymer poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT: PSS), utilized as an active component, is deposited by spin-coating or printing techniques. The devices are directly fabricated from design without the need for masks, patterns, or dies. The output characteristics of both half-wave and full-wave rectifier circuits from two-terminal diodes show stable performances at frequencies below 5 Hz. In three-terminal tunable triodes, threshold voltage can be tuned in the range between 0.25 and 1.6 V In Jour-terminal transistors, ambipolar operation function can be realized in one single device. I-ON/I-OFF current ratios of 10(3)-10(4) have been achieved in the triode and transistor at operating voltages below 3 V In addition, the device applications in electrochromic displays, logical circuits, as well as the switching speed of the circuits and device stability, are discussed.

Keywords
ambipolar transistor, conducting polymer, electrochemical transistor, electrochemistry, electrolyte, flexible electronics, poly(3, 4-ethylenedioxythiophene) (PEDOT), printed electronics, Schottky diode, tunable device
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-46093 (URN)10.1109/JPROC.2005.851532 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13
Chen, M., Perzon, E., Andersson, M. R., Marcinkevicius, S., Jönsson, S., Fahlman, M. & Berggren, M. (2004). 1 micron wavelength photo- and electroluminescence from a conjugated polymer. Applied Physics Letters, 84(18), 3570-3572
Open this publication in new window or tab >>1 micron wavelength photo- and electroluminescence from a conjugated polymer
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 18, p. 3570-3572Article in journal (Refereed) Published
Abstract [en]

We report photo- and electroluminescence from an alternating conjugated polymer consisting of fluorene units and low-band gap donor-acceptor-donor (D–A–D) units. The D–A–D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of 1.27 eV. The corresponding electro- and photoluminescence spectra both peak at approximately 1 μm. Light-emitting diodes, based on a single layer of the polymer, demonstrated external quantum efficiencies from 0.03% to 0.05%.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-22529 (URN)10.1063/1.1737064 (DOI)1790 (Local ID)1790 (Archive number)1790 (OAI)
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2017-12-13
Chen, M., Perzon, E., Robinson, N. D., Jönsson, S., Andersson, M., Fahlman, M. & Berggren, M. (2004). Low band gap donor–acceptor–donor polymers for infra-red electroluminescence and transistors. Synthetic metals, 146(3), 233-236
Open this publication in new window or tab >>Low band gap donor–acceptor–donor polymers for infra-red electroluminescence and transistors
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2004 (English)In: Synthetic metals, ISSN 0379-6779, E-ISSN 1879-3290, Vol. 146, no 3, p. 233-236Article in journal (Refereed) Published
Abstract [en]

We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor–acceptor–donor (D–A–D) units. The D–A–D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 μm. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 3 × 10−3 cm2/V s and current on/off ratio of 104 were achieved at ambient atmosphere.

Keywords
polymers, infra-red electroluminescence, band gap
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-46161 (URN)10.1016/j.synthmet.2004.08.002 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13
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