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Eriksson, Jens
Publications (10 of 26) Show all publications
Giannazzo, F., Lara Avila, S., Eriksson, J. & Sonde, S. (Eds.). (2019). Integration of 2D Materials for Electronics Applications. Basel, Switzerland: MDPI
Open this publication in new window or tab >>Integration of 2D Materials for Electronics Applications
2019 (English)Collection (editor) (Refereed)
Abstract [en]

Printed Edition of the Special Issue Published in Crystals.

Place, publisher, year, edition, pages
Basel, Switzerland: MDPI, 2019. p. 252
National Category
Condensed Matter Physics Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-154880 (URN)10.3390/books978-3-03897-607-3 (DOI)978-3-03897-607-3 (ISBN)978-3-03897-606-6 (ISBN)
Available from: 2019-03-04 Created: 2019-03-04 Last updated: 2019-03-04Bibliographically approved
Puglisi, D., Eriksson, J., Andersson, M., Huotari, J., Bastuck, M., Bur, C., . . . Lloyd Spetz, A. (2016). Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors. Paper presented at 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015. Materials Science Forum, 858, 997-1000
Open this publication in new window or tab >>Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 997-1000Article in journal (Refereed) Published
Abstract [en]

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keywords
Field Effect Transistor, Gas Sensor, Iridium/Tungsten Trioxide, Benzene, 4H-SiC
National Category
Environmental Engineering
Identifiers
urn:nbn:se:liu:diva-124153 (URN)10.4028/www.scientific.net/MSF.858.997 (DOI)
Conference
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
Projects
SENSIndoor, www.sensindoor.eu
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2016-01-20 Created: 2016-01-20 Last updated: 2017-11-30
Eriksson, J., Puglisi, D., Strandqvist, C., Gunnarsson, R., Ekeroth, S., Ivanov, I. G., . . . Lloyd Spetz, A. (2016). Modified Epitaxial Graphene on SiC for Extremely Sensitive andSelective Gas Sensors. Paper presented at ICSCRM 2015, The International Conference on Silicon Carbide and Related Materials, 4-9 October 2015, Giardini Naxos, Italy. Materials Science Forum, 858, 1145-1148
Open this publication in new window or tab >>Modified Epitaxial Graphene on SiC for Extremely Sensitive andSelective Gas Sensors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 1145-1148Article in journal (Refereed) Published
Abstract [en]

Two-dimensional materials offer a unique platform for sensing where extremely high sensitivity is a priority, since even minimal chemical interaction causes noticeable changes inelectrical conductivity, which can be used for the sensor readout. However, the sensitivity has to becomplemented with selectivity, and, for many applications, improved response- and recovery times are needed. This has been addressed, for example, by combining graphene (for sensitivity) with metal/oxides (for selectivity) nanoparticles (NP). On the other hand, functionalization or modification of the graphene often results in poor reproducibility. In this study, we investigate thegas sensing performance of epitaxial graphene on SiC (EG/SiC) decorated with nanostructured metallic layers as well as metal-oxide nanoparticles deposited using scalable thin-film depositiontechniques, like hollow-cathode pulsed plasma sputtering. Under the right modification conditions the electronic properties of the surface remain those of graphene, while the surface chemistry can betuned to improve sensitivity, selectivity and speed of response to several gases relevant for airquality monitoring and control, such as nitrogen dioxide, benzene, and formaldehyde.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keywords
Epitaxial graphene, graphene hybrid materials, gas sensor
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-128078 (URN)10.4028/www.scientific.net/MSF.858.1145 (DOI)
Conference
ICSCRM 2015, The International Conference on Silicon Carbide and Related Materials, 4-9 October 2015, Giardini Naxos, Italy
Available from: 2016-05-16 Created: 2016-05-16 Last updated: 2018-03-26
Eriksson, J., Puglisi, D., Yakimova, R. & Lloyd Spetz, A. (2016). SiC-2D-material-hybrids as a Platform for Extremely Sensitive and Selective Gas Sensors. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>SiC-2D-material-hybrids as a Platform for Extremely Sensitive and Selective Gas Sensors
2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129121 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Huotari, J., Lappalainen, J., Eriksson, J., Bjorklund, R., Heinonen, E., Miinalainen, I., . . . Lloyd Spetz, A. (2016). Synthesis of nanostructured solid-state phases of V7O16 and V2O5 compounds for ppb-level detection of ammonia. Journal of Alloys and Compounds, 675, 433-440
Open this publication in new window or tab >>Synthesis of nanostructured solid-state phases of V7O16 and V2O5 compounds for ppb-level detection of ammonia
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2016 (English)In: Journal of Alloys and Compounds, ISSN 0925-8388, E-ISSN 1873-4669, Vol. 675, p. 433-440Article in journal (Refereed) Published
Abstract [en]

Solid state phase of V7O16 with separate V2O5 phase were fabricated by pulsed laser deposition. The crystal structure and symmetry of the deposited films were studied with X-ray diffraction and Raman spectroscopy, respectively. Rietveld analysis was performed to the X-ray diffraction measurement results. The surface potentials and morphologies of the films were studied with atomic force microscopy, and microstructure of the thin films was analysed by transmission electron microscopy. Raman spectroscopy and Rietveld refinement results confirmed that the thin-film crystal structures varied between orthorombic V2O5 phase and another phase, triclinic V2016, previously found only in the walls of vanadium oxide nanotubes (VOx, -NT), bound together with organic amine. We have earlier presented the first results of stable and pure metal -oxide solid-state phase of V2016 manufactured from ceramic V205 target. Here we show more detailed study of these structures. The microstructure studies showed a variation on the porosity of the films according to crystal structures and also some fibre -like nanostructures were found in the films. The surface morphology depended strongly on the crystal structure and the surface potential studies showed 50 meV difference in the work function values between the phases. Compounds were found to be extremely sensitive towards ammonia, NH3, down to 40 ppb concentrations, and have shown to have the stability and selectivity to control the Selective Catalytic Reduction process, where nitrogen oxides are reduced by ammonia in, e.g. diesel exhausts.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA, 2016
Keywords
Vanadium oxides; Mixed phase; V7O16; V2O5; Thin film
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-127542 (URN)10.1016/j.jallcom.2016.03.116 (DOI)000373614400059 ()
Note

Funding Agencies|Finnish Funding Agency for Innovations - TEKES project CHEMPACK [1427/31/2010]; Tauno Tonning foundation; Henry Ford foundation; Ulla Tuominen Foundation; Riitta and Jorma J. Takanen foundation; Swedish Research Council

Available from: 2016-05-04 Created: 2016-05-03 Last updated: 2017-11-30
Puglisi, D., Eriksson, J., Bur, C., Schuetze, A., Lloyd Spetz, A. & Andersson, M. (2015). Catalytic metal-gate field effect transistors based on SiC for indoor air quality control. Paper presented at E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014. Journal of Sensors and Sensor Systems, 4, 1-8
Open this publication in new window or tab >>Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
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2015 (English)In: Journal of Sensors and Sensor Systems, ISSN 2194-8771, Vol. 4, p. 1-8Article in journal (Refereed) Published
Abstract [en]

High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoorair quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330° C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Place, publisher, year, edition, pages
Germany: Copernicus, 2015
Keywords
silicon carbide, field effect transistor, volatile organic compounds, air quality control
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
urn:nbn:se:liu:diva-113295 (URN)10.5194/jsss-4-1-2015 (DOI)
Conference
E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014
Projects
SENSIndoor (grant agreement no. 604311)
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2015-01-15 Created: 2015-01-15 Last updated: 2015-01-21Bibliographically approved
Puglisi, D., Eriksson, J., Huotari, J., Bastuk, M., Lloyd Spetz, A. & Andersson, M. (2015). Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors. In: ICSCRM 2015: . Paper presented at ICSCRM 2015.
Open this publication in new window or tab >>Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
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2015 (English)In: ICSCRM 2015, 2015Conference paper, Poster (with or without abstract) (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129110 (URN)
Conference
ICSCRM 2015
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Möller, P., Andersson, M., Lloyd Spetz, A., Puustinen, J., Lappalainen, J. & Eriksson, J. (2015). NOx sensing with SiC field effect transistors. In: : . Paper presented at 16th International Conference on Silicon Carbide and Related Materials Giardini Naxos, Italy, October 4 - 9, 2015.
Open this publication in new window or tab >>NOx sensing with SiC field effect transistors
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2015 (English)Conference paper, Poster (with or without abstract) (Refereed)
National Category
Control Engineering
Identifiers
urn:nbn:se:liu:diva-124156 (URN)
Conference
16th International Conference on Silicon Carbide and Related Materials Giardini Naxos, Italy, October 4 - 9, 2015
Available from: 2016-01-20 Created: 2016-01-20 Last updated: 2016-02-01
Fashandi, H., Andersson, M., Eriksson, J., Lu, J., Smedfors, K., Zetterling, C.-M. -., . . . Eklund, P. (2015). Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti. Scripta Materialia, 99, 53-56
Open this publication in new window or tab >>Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti
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2015 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 99, p. 53-56Article in journal (Refereed) Published
Abstract [en]

We report a single-step procedure for growth of ohmic Ti3SiC2 on 4H-SiC by sputter-deposition of Ti at 960 °C, based on the Ti–SiC solid-state reaction during deposition. X-ray diffraction and electron microscopy show the growth of interfacial Ti3SiC2. The as-deposited contacts are ohmic, in contrast to multistep processes with deposition followed by rapid thermal annealing. This procedure also offers the possibility of direct synthesis of oxygen-barrier capping layers before exposure to air, potentially improving contact stability in high-temperature and high-power devices.

Place, publisher, year, edition, pages
Elsevier, 2015
Keywords
Silicon carbide, MAX phase, Physical vapor deposition, High temperature
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-113760 (URN)10.1016/j.scriptamat.2014.11.025 (DOI)000348881100014 ()
Note

We acknowledge the support from the VINN Excellence Center in research and innovation on Functional Nanoscale Materials (FunMat) by the Swedish Governmental Agency for Innovation Systems. P.E and J.L. also acknowledge support from the Swedish Foundation for Strategic Research through the Future Research Leaders 5 program and the Synergy Grant FUNCASE, Functional Carbides and Advanced Surface Engineering. In addition, we thank Dr. Hans Hogberg, Dr. Arni Sigurdur Ingason and Dr. Fredrik Eriksson for discussions and help with experiments.

Available from: 2015-01-30 Created: 2015-01-30 Last updated: 2017-12-05Bibliographically approved
Eriksson, J., Puglisi, D., Hsuan Kang, Y., Yakimova, R. & Lloyd Spetz, A. (2014). Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization. Physica. B, Condensed matter, 439, 105-108
Open this publication in new window or tab >>Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization
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2014 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 439, p. 105-108Article in journal (Refereed) Published
Abstract [en]

Graphene-based chemical gas sensors normally show ultra-high sensitivity to certain gas molecules but at the same time suffer from poor selectivity and slow response and recovery Limes. Several approaches based on functionalization or modification of the graphene surface have been demonstrated as means to improve these issues, but most such measures result in poor reproducibility. In this study we investigate reproducible graphene surface modifications by sputter deposition of thin nanostructured Au or Pt layers. It is demonstrated that under the right metallization conditions the electronic properties of the surface remain those of graphene, while the surface chemistry is modified to improve sensitivity, selectivity and speed of response to nitrogen dioxide.

Place, publisher, year, edition, pages
Elsevier, 2014
Keywords
Epitaxial graphene on SiC; Surface modifications; Gas sensor
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-105566 (URN)10.1016/j.physb.2013.11.009 (DOI)000331620700023 ()
Available from: 2014-03-31 Created: 2014-03-27 Last updated: 2017-12-05
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