Artificial superlattices exhibit exceptional electronic, magnetic, optical, and mechanical properties which make them unique candidates for applications in a broad range of technologies. A common key feature of superlattices is the need for atomically abrupt interfaces. However, superlattices comprised of materials with different properties, such as melting points and diffusivities, pose large challenges for achieving high crystal quality of both constituents with abrupt interfaces. By employing ion-assisted magnetron sputter epitaxy, we present an innovative solution to this problem with utilizing a unique combination of thermal radiation and kinetic energy that enable sufficient adatom mobility for epitaxial growth of both materials. The research was implemented for the case of CrB2/TiB2 heteroepitaxial superlattices, as neutron interference mirrors, wherein the constituents’ melting points differ by 1100 K. Ion-induced intermixing was avoided by commencing growth of each TiB2 and CrB2 layer by up to 3 unit cells (uc) without ion assistance, forming a buffer to protect the interface during the ion-assisted growth of the remainder of each layer. Heteroepitaxial superlattice growth with interface widths σCrB2 ∼1 uc and σTiB2 ∼2 uc was confirmed for different modulation periods. More than 3000 uc (∼1 µm) thick superlattices with abrupt interfaces were demonstrated for neutron mirror applications.

Single-crystal CrB₂/TiB₂ diboride superlattices with well-defined layers are promising candidates for neutron optics. However, excess B in sputter-deposited TiB_y using a single TiB₂ target deteriorates the structural quality of CrB_x/TiB_y (0001) superlattices. We study the influence of co-sputtering of TiB₂ + Ti on the stoichiometry and crystalline quality of 300-nm-thick TiB_y single layers and CrB_x/TiB_y (0001) superlattices on Al₂O₃(0001) substrates grown by DC magnetron sputter epitaxy at growth-temperatures T_S ranging from 600 to 900 °C. By controlling the relative applied powers to the TiB₂ and Ti magnetrons, y could be reduced from 3.3 to 0.9. TiB_2.3 grown at 750 °C exhibited epitaxial domains about 10x larger than non-co-sputtered films. Close-to-stoichiometry CrB_1.7/TiB_2.3 superlattices with modulation periods Λ = 6 nm grown at 750 °C showed the highest single crystal quality and best layer definition. TiB_2.3 layers display rough top interfaces indicating kinetically limited growth while CrB_1.7 forms flat and abrupt top interfaces indicating epitaxial growth with high adatom mobility.

Harvesting indoor light to power electronic devices for the Internet of Things has become an application scenario for emerging photovoltaics, especially utilizing organic photovoltaics (OPVs). Combined liquid- and solid-state processing, such as printing and lamination used in industry for developing indoor OPVs, also provides a new opportunity to investigate the device structure, which is otherwise hardly possible based on the conventional approach due to solvent orthogonality. This study investigates the impact of fullerene-based acceptor interlayer on the performance of conjugated polymer-fullerene-based laminated OPVs for indoor applications. We observe open-circuit voltage (V-OC) loss across the interface despite this arrangement being presumed to be ideal for optimal device performance. Incorporating insulating organic components such as polyethyleneimine (PEI) or polystyrene (PS) into fullerene interlayers decreases the work function of the cathode, leading to better energy level alignment with the active layer (AL) and reducing the V-OC loss across the interface. Neutron reflectivity studies further uncover two different mechanisms behind the V-OC increase upon the incorporation of these insulating organic components. The self-organized PEI layer could hinder the transfer of holes from the AL to the acceptor interlayer, while the gradient distribution of the PS-incorporated fullerene interlayer eliminates the thermalization losses. This work highlights the importance of structural dynamics near the extraction interfaces in OPVs and provides experimental demonstrations of interface investigation between solution-processed cathodic fullerene layer and bulk heterojunction AL.

Sputter-deposited titanium diborides are promising candidates for protective coatings in harsh and extreme conditions. However, growing these layers from TiB₂ diboride targets by DC magnetron sputtering usually leads to over-stoichiometric layers with low crystal qualities. Moreover, superlattices with TiB₂ as one of the constituents have been becoming popular, owing to their superior mechanical properties compared to single layer constituents in addition to their use in other applications such as neutron optics. Here, we propose the use of a TiB (Ti:B = 1:1) sputtering target in an on-axis deposition geometry and demonstrate the growth of epitaxial sub-stoichiometric TiB_1.8 thin films. Furthermore, we present the growth of CrB_1.7/TiB_1.8 superlattices, from TiB (Ti:B = 1:1) and stoichiometric CrB₂ targets, with abrupt interfaces as promising materials system for neutron interference mirrors. The high crystal quality structure with well-defined interfaces is the common feature of superlattices which, regardless of application, should be addressed during the growth process.

Utilizing TiB target, all films crystallize in the hexagonal AlB₂ structure. The sub-stoichiometry of the TiB_1.8 films was accompanied by the presence of planar defects embedded in the films. CrB_1.7/TiB_1.8 superlattices exhibited a homogeneous boron distribution within the layers with no sign of B-rich tissue phases through the layers. This study demonstrates the feasibility for TiB as sputter target material, that offers a solution for deposition of TiB₂-based superlattices without the need to adjust the deposition parameters. Such adjustments would otherwise be unavoidable for tuning the TiB2 composition and could affect the growth of the other constituent materials.

The optical contrast and minimum layer thickness of Ni/Ti broadband neutron multilayer supermirrors is usually hampered by an interface width, typically 0.7 nm, caused by nanocrystallites, interdiffusion, and/or intermixing. We explore the elimination of nanocrystallites in combination with interface smoothening by modulation of ion assistance during magnetron sputter deposition of 0.8 to 6.4 nm thick Ni and Ti layers. The amorphization is achieved through incorporation of natural B₄C where B and C preferably bond to Ti. A two-stage substrate bias was applied to each layer; -30 V for the initial 1 nm followed by -100 V for the remaining part, generating multilayer mirrors with interface widths of 0.40-0.45 nm. The results predict that high performance supermirrors with m-values as high as 10 are feasible by using ¹¹B isotope-enriched B₄C combined with temporal control of the ion assistance.

The performance of multilayers in optical components, such as those used in neutron scattering instruments, is crucially dependent on the achievable interface width. We have shown how the interface width of Ni/Ti multilayers can be improved using the incorporation of B₄C to inhibit the formation of nanocrystals and limit interdiffusion and intermetallic reactions at the interfaces. A modulated ion-assistance scheme was used to prevent intermixing and roughness accumulation throughout the layer stack. In this work we investigate the incorporation of low-neutron-absorbing ¹¹B₄C for Ni/Ti neutron multilayers. Combined fitting of neutron reflectivity and X-ray reflectivity measurements shows an elimination of accumulated roughness for the ¹¹B₄C containing multilayers with a mean interface width of 4.5 Å, resulting in an increase in reflectivity at the first Bragg peak by a factor of 2.3 and 1.5 for neutron and X-ray measurements, respectively.

Tritantalum pentanitride (Ta₃N₅) semiconductor is a promising material for photoelectrolysis of water with high efficiency. Ta₃N₅ is a metastable phase in the complex system of TaN binary compounds. Growing stabilized single-crystal Ta₃N₅ films is correspondingly challenging. Here, we demonstrate the growth of a nearly single-crystal Ta₃N₅ film with epitaxial domains on c-plane sapphire substrate, Al₂O₃(0001), by magnetron sputter epitaxy. Introduction of a small amount ~2% of O₂ into the reactive sputtering gas mixed with N₂ and Ar facilitates the formation of a Ta₃N₅ phase in the film dominated by metallic TaN. In addition, we indicate that a single-phase polycrystalline Ta₃N₅ film can be obtained with the assistance of a Ta₂O₅ seed layer. With controlling thickness of the seed layer smaller than 10 nm and annealing at 1000 °C, a crystalline β phase Ta₂O₅ was formed, which promotes the domain epitaxial growth of Ta₃N₅ films on Al₂O₃(0001). The mechanism behind the stabilization of the orthorhombic Ta₃N₅ structure resides in its stacking with the ultrathin seed layer of orthorhombic β-Ta₂O₅, which is energetically beneficial and reduces the lattice mismatch with the substrate.

CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3-y (002) films on a (112 over bar 0)-oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3-y shows growth with a small in-plane tilt of <approximate to 0.2 degrees toward the (200) plane of CaMnO3-y and the (1 over bar 104) with respect to the LaAlO3 (112 over bar 0) substrate. X-ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO3. The LaAlO3 (112 over bar 0) substrate promotes tensile-strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along and , forming stacking faults.

Chromium-nitride based materials have shown unexpected promise as thermo-electric materials for, e.g., wasteheat harvesting. Here, CrN and (Cr,V)N thin films were deposited by reactive magnetron sputtering. Thermoelectric measurements of pure CrN thin films show a low electrical resistivity between 1.2 and 1.5 x 10(-3) Omega cm and very high values of the Seebeck coefficient and thermoelectric power factor, in the range between 370-430 mu V/K and 9-11 x 10(-3) W/mK(2), respectively. Alloying of CrN films with small amounts (less than 15 %) of vanadium results in cubic (Cr,V)N thin films. Vanadium decreases the electrical resistivity and yields powerfactor values in the same range as pure CrN. Density functional theory calculations of sub-stoichiometric CrN1-delta and (Cr,V)N1-delta show that nitrogen vacancies and vanadium substitution both cause n-type conductivity and features in the band structure typically correlated with a high Seebeck coefficient. The results suggest that slight variations in nitrogen and vanadium content affect the power factor and offers a means of tailoring the power factor and thermoelectric figure of merit.

Direct growth of orthorhombic Ta3N5-type Ta-O-N compound thin films, specifically Ta3-xN5-yOy, on Si and sapphire substrates with various atomic fractions is realized by unbalanced magnetron sputtering. Low-degree fiber-textural Ta3-xN5-yOy films were grown through reactive sputtering of Ta in a gas mixture of N-2, Ar, and O-2 with keeping a partial pressure ratio of 3:2:0.1 in a total working pressure range of 5-30 mTorr. With increasing total pressure from 5 to 30 mTorr, the atomic fraction of O in the as-grown Ta3-xN5-yOy films was found to increase from 0.02 to 0.15 while that of N and Ta decrease from 0.66 to 0.54 and 0.33 to 0.31, respectively, leading to a decrease in b lattice constant up to around 1.3%. Metallic TaNx phases were formed without oxygen. For a working pressure of 40 mTorr, an amorphous, O-rich Ta-N-O compound film with a high O fraction of similar to 0.48, was formed, mixed with non-stoichiometric TaON and Ta2O5. By analyzing the plasma discharge, the increasing O incorporation is associated with oxide formation on top of the Ta target due to a higher reactivity of Ta with O than with N. The increase of O incorporation in the films also leads to a optical bandgap widening from similar to 2.22 to similar to 2.96 eV, which is in agreement with the compositional and structural changes from a crystalline Ta3-xN5-yOy to an amorphous O-rich Ta-O-N compound.