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Eriksson, Fredrik
Publications (10 of 29) Show all publications
Magnuson, M., Eriksson, F., Hultman, L. & Högberg, H. (2017). Bonding Structures of ZrHx Thin Films by X-ray Spectroscopy. The Journal of Physical Chemistry C, 121, 25750-25758
Open this publication in new window or tab >>Bonding Structures of ZrHx Thin Films by X-ray Spectroscopy
2017 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 121, p. 25750-25758Article in journal (Refereed) Published
Abstract [en]

The variation in local atomic structure and chemical bonding of ZrHx (x=0.15, 0.30, 1.16) magnetron sputtered thin films are investigated by Zr K-edge (1s) X-ray absorption near-edge structure and extended X-ray absorption fine structure spectroscopies. A chemical shift of the Zr K-edge towards higher energy with increasing hydrogen content is observed due to charge-transfer and an ionic or polar covalent bonding component between the Zr 4d and the H 1s states with increasing valency for Zr. We find an increase in the Zr-Zr bond distance with increasing hydrogen content from 3.160 Å in the hexagonal closest-packed metal (a-phase) to 3.395 Å in the understoichiometric d-ZrHx film (CaF2-type structure) with x=1.16 that largely resembles that of bulk d-ZrH2. For yet lower hydrogen contents, the structures are mixed a- and d-phases, while sufficient hydrogen loading (x>1) yields a pure δ-phase that is understoichiometric, but thermodynamically stable. The change in the hydrogen content and strain is discussed in relation to the corresponding change of bond lengths, hybridizations, and trends in electrical resistivity.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-143207 (URN)10.1021/acs.jpcc.7b03223 (DOI)000416496200016 ()
Funder
Swedish Energy Agency, 43606-1Swedish Foundation for Strategic Research , FUNCASE [RMA11-0029]Carl Tryggers foundation , CTS16:303, CTS14:310
Note

Funding agencies: Swedish Government Strategic Research Area in Materials Science on Functiona

Available from: 2017-11-23 Created: 2017-11-23 Last updated: 2018-06-04
Ghafoor, N., Eriksson, F., Andrew, A., Gullikson, E., Franz, S., Greczynski, G. & Birch, J. (2017). Impact of B4C co-sputtering on structure and optical performance of Cr/Sc multilayer X-ray mirrors. Optics Express, 25(15), 18274-18287
Open this publication in new window or tab >>Impact of B4C co-sputtering on structure and optical performance of Cr/Sc multilayer X-ray mirrors
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2017 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 25, no 15, p. 18274-18287Article in journal (Refereed) Published
Abstract [en]

The influence of B4C incorporation during magnetron sputter deposition of Cr/Sc multilayers intended for soft X-ray reflective optics is investigated. Chemical analysis suggests formation of metal: boride and carbide bonds which stabilize an amorphous layer structure, resulting in smoother interfaces and an increased reflectivity. A near-normal incidence reflectivity of 11.7%, corresponding to a 67% increase, is achieved at λ = 3.11 nm upon adding 23 at.% (B + C). The advantage is significant for the multilayer periods larger than 1.8 nm, where amorphization results in smaller interface widths, for example, giving 36% reflectance and 99.89% degree of polarization near Brewster angle for a multilayer polarizer. The modulated ion-energy-assistance during the growth is considered vital to avoid intermixing during the interface formation even when B + C are added.

Place, publisher, year, edition, pages
Optical Society of America, 2017
National Category
Natural Sciences Inorganic Chemistry
Identifiers
urn:nbn:se:liu:diva-139944 (URN)10.1364/oe.25.018274 (DOI)000408584400128 ()28789315 (PubMedID)2-s2.0-85025823281 (Scopus ID)
Note

Funding agencies: Swedish Science Council; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

Available from: 2017-08-22 Created: 2017-08-22 Last updated: 2017-11-29Bibliographically approved
Kerdsongpanya, S., Eriksson, F., Jensen, J., Lu, J., Sun, B., Kan Koh, Y., . . . Eklund, P. (2016). Experimental and Theoretical Investigation of Cr1-xScxN Solid Solutions for Thermoelectric Applications. Journal of Applied Physics, 120(21), Article ID 215103.
Open this publication in new window or tab >>Experimental and Theoretical Investigation of Cr1-xScxN Solid Solutions for Thermoelectric Applications
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 120, no 21, article id 215103Article in journal (Refereed) Published
Abstract [en]

We investigate the trends in mixing thermodynamics of Cr1-xScxN solid solutions in the cubic B1 structure and their electronic density of state by first-principle calculations, and thin-film synthesis of Cr1-xScxN solid solutions by reactive dc magnetron sputtering. Films with the composition Cr0.92Sc0.08N exhibit a thermoelectric power factor of about 8x10-4 Wm-1K-2at 770 K, similar to CrN. The results show that the disordered Cr1-xScxN solid solutions is thermodynamically stable in B1 solid solutions at T = 800°C rather than in the B1- L11 ordered solid solutions stable at 0 K. The calculated electronic density of state (DOS) indicates a positive bowing parameter for the electronic band gap of Cr1-xScxN solid solutions. The calculated DOS suggest possible improvement of power factor due to Sc 3d orbital delocalization on Cr 3d orbital gives decreasing electrical resistivity with retained Seebeck coefficient in Cr-rich regime, consistent with the experimentally observed high power factor for the solid solution.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016
Keywords
Chromium nitride, Scandium nitride, Thermoelectrics, First-principles calculations, Solid solutions
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-117757 (URN)10.1063/1.4968570 (DOI)000390602600026 ()
Note

Funding agencies: European Research Council under the European Communitys Seventh Framework Programme [335383]; Swedish Research Council (VR) [621-2012-4430, 621-2011-4417, 330-2014-6336]; Marie Sklodowska Curie Actions [INCA 60098]; Linnaeus Strong Research Environment Li

Available from: 2015-05-08 Created: 2015-05-08 Last updated: 2017-12-04Bibliographically approved
Tengdelius, L., Broitman, E., Lu, J., Eriksson, F., Birch, J., Nyberg, T., . . . Högberg, H. (2016). Hard and elastic epitaxial ZrB2 thin films on Al2O3(0001) substrates deposited by magnetron sputtering from a ZrB2 compound target. Acta Materialia, 111, 166-172
Open this publication in new window or tab >>Hard and elastic epitaxial ZrB2 thin films on Al2O3(0001) substrates deposited by magnetron sputtering from a ZrB2 compound target
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2016 (English)In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 111, p. 166-172Article in journal (Refereed) Published
Abstract [en]

Zirconium diboride (ZrB2) exhibits high hardness and high melting point, which is beneficial for applications in for e.g. metal cutting. However, there is limited data on the mechanical properties of ZrB2 films and no data on epitaxial films. In this study, ZrB2(0001) thin films, with thicknesses up to 1.2 μm, have been deposited on Al2O3(0001) substrates by direct current magnetron sputtering from a compound target. X-ray diffraction and transmission electron microscopy show that the films grow epitaxially with two domain types exhibiting different in-plane epitaxial relationships to the substrate. The out-of-plane epitaxial relationship was determined to ZrB2(0001)|Al2O3(0001) and the in-plane relationships of the two domains to ZrB2[100]‖Al2O3[100] and ZrB2[110]‖Al2O3[100]. Mechanical properties of the films, evaluated by nanoindentation, showed that all films exhibit hardness values above 45 GPa, a reduced Young's modulus in the range 350–400 GPa, and a high elastic recovery of 70% at an applied load of 9000 μN.

Place, publisher, year, edition, pages
Elsevier, 2016
Keywords
Borides, Epitaxial growth, Mechanical properties, Nanoindentation, Sputter deposition
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-128612 (URN)10.1016/j.actamat.2016.03.064 (DOI)000375812100018 ()
Note

Funding agencies: Swedish Research Council (VR) [621-2010-3921]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Knut and Alice Wallenberg Foundation

Available from: 2016-05-25 Created: 2016-05-25 Last updated: 2017-11-30Bibliographically approved
Olsson, S., Broitman, E., Garbrecht, M., Birch, J., Hultman, L. & Eriksson, F. (2016). Mechanical and Tribological Properties of AlCuFe Quasicrystal and Al(Si)CuFe Approximant Thin Films. Journal of Materials Research, 31(2), 232-240
Open this publication in new window or tab >>Mechanical and Tribological Properties of AlCuFe Quasicrystal and Al(Si)CuFe Approximant Thin Films
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2016 (English)In: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 31, no 2, p. 232-240Article in journal (Refereed) Published
Abstract [en]

Multilayered thin films of Al/Cu/Fe have been prepared by magnetron sputtering and annealed into the quasicrystalline or approximant phases, for Al2O3 or Si substrates, respectively. The nanomechanical and nanotribological properties; hardness, elastic modulus, friction and toughness, have been measured using a triboindenter and analytical methods. The approximant phase, annealed at 600 °C for 4 h, proved to be harder and had higher elastic modulus values than the quasicrystalline phase, about, 15.6 GPa and 258 GPa, respectively. The fracture toughness of the approximant, <0.1 MPa/m½, was however inferior to that of the quasicrystals with 1.5 MPa/m½. The friction coefficients were measured in a range of 0.10-0.14 for the quasicrystalline and approximant thin films.

Place, publisher, year, edition, pages
Cambridge University Press, 2016
Keywords
quasicrystal, approximant, thin film, hardness, elastic modulus, friction, toughness, tribology, TEM, STEM, XRD
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-96907 (URN)10.1557/jmr.2015.384 (DOI)000371704900007 ()
Note

Funding agencies:  Knut and Alice Wallenberg Foundation; Swedish Government Strategic Research Area Grant in Materials Science (SFO Mat-LiU) on Advanced Functional Materials

Available from: 2013-08-29 Created: 2013-08-29 Last updated: 2017-12-06Bibliographically approved
Fager, H., Eriksson, F., Lu, J., Jensen, J. & Hultman, L. (2014). Reactive DC magnetron sputtering of amorphous (Ti0.25B0.75)1−xSixNy thin films from TiB2 and Si targets.
Open this publication in new window or tab >>Reactive DC magnetron sputtering of amorphous (Ti0.25B0.75)1−xSixNy thin films from TiB2 and Si targets
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2014 (English)Manuscript (preprint) (Other academic)
Abstract [en]

(Ti0.25B0.75)1−xSixNy, 0≤x≤0.89, 0.9≤y≤1.25, thin films were reactively grown on Si(001) substrates by dc magnetron sputtering from compound TiB2 and elemental Si targets. The films can be grown in a fully electron-diffraction amorphous state with x>0.46, as evidenced by XRD and HR-TEM investigations. With x=0, BN form onion-like sheets surrounding TiNnanograins. Substrate temperatures, Ts=100-600 ◦C, has a minor effect of the film structure and properties, due to limited surface diffusion.

Ion-assisted growth with substrate bias voltages, Vb, between -50 V and -200 V, favors densification of amorphous structures over nanocrystalline formation, and improves mechanical properties. A maximum hardness value of 26.8±0.7 GPa is found for an amorphous (Ti0.25B0.75)0.39Si0.61N1.15 film grown with substrate temperature Ts=400 °C and substrate bias voltage Vb=-100 V.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-106572 (URN)
Available from: 2014-05-12 Created: 2014-05-12 Last updated: 2016-08-31Bibliographically approved
Högberg, H., Tengdelius, L., Samuelsson, M., Eriksson, F., Broitman, E., Lu, J., . . . Hultman, L. (2014). Reactive sputtering of delta-ZrH2 thin films by high power impulse magnetron sputtering and direct current magnetron sputtering. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 32(4), 041510
Open this publication in new window or tab >>Reactive sputtering of delta-ZrH2 thin films by high power impulse magnetron sputtering and direct current magnetron sputtering
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2014 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 32, no 4, p. 041510-Article in journal (Refereed) Published
Abstract [en]

Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H-2 plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at.% and O contents typically below 0.2 at.% as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of similar to 0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase delta-ZrH2 (CaF2 type structure) at H content greater thansimilar to 55 at.% and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5-7 GPa for the delta-ZrH2 films that is slightly harder than the similar to 5 GPa determined for Zr films and with coefficients of friction in the range of 0.12-0.18 to compare with the range of 0.4-0.6 obtained for Zr films. Wear resistance testing show that phase-pure delta-ZrH2 films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of similar to 100-120 mu Omega cm for the delta-ZrH2 films, which is slightly higher compared to Zr films with values in the range 70-80 mu Omega cm.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-109234 (URN)10.1116/1.4882859 (DOI)000338718400022 ()
Available from: 2014-08-12 Created: 2014-08-11 Last updated: 2017-12-05Bibliographically approved
Olsson, S., Eriksson, F., Jensen, J., Garbrecht, M., Birch, J. & Hultman, L. (2014). Structure and Composition of Al(Si)CuFe Approximant Thin Films Formed by Si Substrate Diffusion. Thin Solid Films, 550(1), 105-109
Open this publication in new window or tab >>Structure and Composition of Al(Si)CuFe Approximant Thin Films Formed by Si Substrate Diffusion
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2014 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 550, no 1, p. 105-109Article in journal (Refereed) Published
Abstract [en]

Multilayered Al/Cu/Fe thin films with composition close to the quasicrystalline phase have been prepared by magnetron sputtering. Annealing at 600 °C yields a homogeneous film of the cubic a-approximant phase by Si substrate diffusion, which prevents the formation of the quasicrystalline phase. After 4 h annealing the film contained 8 at.% Si, which corresponds to the expected value of the a-approximant. The amount of Si in the films was found to slowly increase to ~12 at.% during continued annealing (64 h) while the α-approximant phase was retained. The lattice parameter was found to  continuously decrease as Al became substituted with Si. The film is observed to be polycrystalline with individual grains being strained in varying magnitude, and with no preferential orientation relationship to the substrate or each other.

Place, publisher, year, edition, pages
Elsevier, 2014
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-96906 (URN)10.1016/j.tsf.2013.10.121 (DOI)000328499700017 ()
Available from: 2013-08-29 Created: 2013-08-29 Last updated: 2017-12-06Bibliographically approved
Olsson, S., Garbrecht, M., Birch, J., Hultman, L. & Eriksson, F. (2013). Ion-assisted Growth of Quasicrystalline Cu-Al-Sc Directly from the Vapor Phase.
Open this publication in new window or tab >>Ion-assisted Growth of Quasicrystalline Cu-Al-Sc Directly from the Vapor Phase
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2013 (English)Manuscript (preprint) (Other academic)
Abstract [en]

Ion assisted depositions have been used to grow the Al38Cu46Sc16 quasicrystalline phase directly from the vapor phase in thin film form. Diffraction experiments reveal that amorphous films are formed at room temperature. The quasicrystalline phase formed at a substrate temperature of 340 °C with an improved quality at higher temperatures up to 460 °C. The quasicrystal film quality is improved by increasing the ion flux during ion-assisted growth with ion energies of 26.7 eV. Increasing the ion energy further was however found to cause resputtering and defects in the film. Electron microscopy reveals a polycrystalline microstructure with crystal grains in the shape of thin needles.

Keywords
Quasicrystal, thin film, ion-assisted depositions, magnetron sputtering, TEM, XRD
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-96909 (URN)
Available from: 2013-08-29 Created: 2013-08-29 Last updated: 2016-08-31Bibliographically approved
Olsson, S., Garbrecht, M., Birch, J., Hultman, L. & Eriksson, F. (2013). Phase Evolution of Multilayered Al/Cu/Co Thin Films into Decagonal Al-Cu-Co and Al-Cu-Co-Si Quasicrystalline Phases.
Open this publication in new window or tab >>Phase Evolution of Multilayered Al/Cu/Co Thin Films into Decagonal Al-Cu-Co and Al-Cu-Co-Si Quasicrystalline Phases
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2013 (English)Manuscript (preprint) (Other academic)
Abstract [en]

Multilayered Al/Cu/Co thin films have been prepared by magnetron sputtering on Al2O3(0001) and Si(001) substrates and the phase evolution has been investigated. The decagonal d-Al-Cu-Co and d-Al-Cu-Co-Si phases were found to form at 500 °C, and at 600 °C these were the only phases. At increasing temperatures, the quasicrystals grew larger in size, up to 500 nm, although always smaller for the d-Al-Cu-Co-Si, and obtained a texturing with the 10-fold periodic axis aligned with the substrate normal. The d-Al-Cu-Co phase persisted to more than 850 °C, with a complete texturing, while the d-Al-Cu-Co-Si phase was replaced by other crystalline phases at 800 °C.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-96908 (URN)
Available from: 2013-08-29 Created: 2013-08-29 Last updated: 2016-08-31Bibliographically approved
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