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Andersson, Mike
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Publications (10 of 94) Show all publications
Shi, Y., Kashiwaya, S., Lu, J., Dahlqvist, M., Sangiovanni, D. G., Rogoz, V., . . . Hultman, L. (2025). Synthesis of Ti4Au3C3 and its derivative trilayer goldene through chemical exfoliation. Science Advances, 11(13)
Open this publication in new window or tab >>Synthesis of Ti4Au3C3 and its derivative trilayer goldene through chemical exfoliation
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2025 (English)In: Science Advances, E-ISSN 2375-2548, Vol. 11, no 13Article in journal (Refereed) Published
Abstract [en]

Achieving large two-dimensional (2D) sheets of any metal is challenging due to their tendency to coalescence or cluster into 3D shapes. Recently, single-atom-thick gold sheets, termed goldene, was reported. Here, we ask if goldene can be extended to include multiple layers. The answer is yes, and trilayer goldene is the magic number, for reasons of electronegativity. Experiments are made to synthesize the atomically laminated phase Ti4Au3C3 through substitutional intercalation of Si layers in Ti4SiC3 for Au. Density functional theory calculations suggest that it is energetically favorable to insert three layers of Au into Ti4SiC3, compared to inserting a monolayer, a bilayer, or more than three layers. Isolated trilayer goldene sheets, ~100 nanometers wide and 6.7 angstroms thick, were obtained by chemically etching the Ti4C3 layers from Ti4Au3C3 templates. Furthermore, trilayer goldene is found in both hcp and fcc forms, where the hcp is ~50 milli–electron volts per atom more stable at room temperature from ab initio molecular dynamic simulations.

Place, publisher, year, edition, pages
American Association for the Advancement of Science (AAAS), 2025
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-212681 (URN)10.1126/sciadv.adt7999 (DOI)001455518300003 ()40153494 (PubMedID)2-s2.0-105001593083 (Scopus ID)
Note

Funding Agencies|Swedish Research Council [2023- 04107, 2021- 04426, VR- 2018- 05973, 2022- 06725, 2021- 00171]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO- Mat-LiU 2009 00971]; Aforsk Foundation [23- 591, 22- 4]; MIRAI2.0 Joint seed funding; Scandinavia- Japan Sasakawa Foundation; Wallenberg Launchpad (WALP); Olle Engkvist foundation [222- 0053]; Carl Tryggers Stiftelse [CTS 20:150]; Swedish Energy Agency [43606-1]; Carl Tryggers Foundation [CTS23:2746, CTS 20:272, CTS16:303, CTS14:310]; Goran Gustafsson Foundation for Research in Natural Sciences and Medicine; Wallenberg Scholar Grant [2019.0433]; Wallenberg Initiative Materials Science for Sustainability (WISE) - Knut and Alice Wallenberg Foundation

Available from: 2025-03-31 Created: 2025-03-31 Last updated: 2025-04-17
Kashiwaya, S., Shi, Y., Lu, J., Sangiovanni, D. G., Greczynski, G., Magnuson, M., . . . Hultman, L. (2024). Synthesis of goldene comprising single-atom layer gold. Nature Synthesis, 3(6), 744-751
Open this publication in new window or tab >>Synthesis of goldene comprising single-atom layer gold
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2024 (English)In: Nature Synthesis, E-ISSN 2731-0582, Vol. 3, no 6, p. 744-751Article in journal (Refereed) Published
Abstract [en]

The synthesis of monolayer gold has so far been limited to free-standingseveral-atoms-thick layers, or monolayers confned on or inside templates.Here we report the exfoliation of single-atom-thick gold achieved throughwet-chemically etching away Ti3C2 from nanolaminated Ti3AuC2, initiallyformed by substituting Si in Ti3SiC2 with Au. Ti3SiC2 is a renown MAX phase,where M is a transition metal, A is a group A element, and X is C or N. Ourdeveloped synthetic route is by a facile, scalable and hydrofuoric acid-freemethod. The two-dimensional layers are termed goldene. Goldene layerswith roughly 9% lattice contraction compared to bulk gold are observedby electron microscopy. While ab initio molecular dynamics simulationsshow that two-dimensional goldene is inherently stable, experiments showsome curling and agglomeration, which can be mitigated by surfactants.X-ray photoelectron spectroscopy reveals an Au 4f binding energy increaseof 0.88 eV. Prospects for preparing goldene from other non-van der WaalsAu-intercalated phases, including developing etching schemes,are presented.

Place, publisher, year, edition, pages
Nature Publishing Group, 2024
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-202582 (URN)10.1038/s44160-024-00518-4 (DOI)001203366300001 ()2-s2.0-85190684420 (Scopus ID)
Note

Funding agencies: the Swedish Research Council project grant nos. 2017-03909 (L.H.), 2023-04107 (L.H.) and 2021-04426 (D.G.S.), Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University grant no. SFO-Mat-LiU 2009 00971, Wallenberg Scholar Program grant no. KAW 2019.0290 (L.H.), the Swedish Research Council through grant agreement nos. VR-2018-05973 and 2022-06725, MIRAI2.0, Åforsk Foundation grant no. 22-4, the Olle Engkvist foundation grant no. 222-0053, Carl Tryggers Stiftelse contract no. CTS 20:150, Swedish Energy Agency (grant no. 43606-1), Carl Tryggers Foundation (grant nos. CTS23:2746, CTS 20:272, CTS16:303, CTS14:310)and Göran Gustafsson Foundation for Research in Natural Sciences and Medicines.

Available from: 2024-04-17 Created: 2024-04-17 Last updated: 2025-02-06Bibliographically approved
Andersson, M., Lloyd Spetz, A. & Puglisi, D. (2020). Recent progress in silicon carbide field effect gas sensors (2ed.). In: Raivo Jaaniso and Ooi Kiang Tan (Ed.), Semiconductor gas sensors: (pp. 309-346). Oxford: Woodhead Publishing Limited
Open this publication in new window or tab >>Recent progress in silicon carbide field effect gas sensors
2020 (English)In: Semiconductor gas sensors / [ed] Raivo Jaaniso and Ooi Kiang Tan, Oxford: Woodhead Publishing Limited, 2020, 2, p. 309-346Chapter in book (Refereed)
Abstract [en]

The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C with an increased number of detectable gases. Here, we review recent progress in research and applications, starting with transducer and detection mechanisms, presenting new material combinations as sensing layers for improved selectivity and detection limits down to subparts per billion. We describe how temperature cycled operation combined with advanced data evaluation enables one sensor to act as a sensor array thereby vastly improving selectivity. Field tests require advanced packaging, which is described, and examples of possible applications like selective detection of ammonia for urea injection control in diesel exhausts and toxic volatile organic compounds for indoor air quality monitoring and control are given.

Place, publisher, year, edition, pages
Oxford: Woodhead Publishing Limited, 2020 Edition: 2
Series
Woodhead Publishing Series in Electronic and Optical Materials
Keywords
Gas sensors, field-effect gas sensors, semiconductor gas sensors, VOC, harsh environment
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-161059 (URN)10.1016/B978-0-08-102559-8.00010-0 (DOI)9780081025598 (ISBN)
Available from: 2019-10-18 Created: 2019-10-18 Last updated: 2019-12-06Bibliographically approved
Bastuck, M., Puglisi, D., Lloyd Spetz, A., Schuetze, A., Sauerwald, T. & Andersson, M. (2018). UV-assisted gate bias cycling in gas-sensitive field-effect transistors. In: : . Paper presented at EUROSENSORS 2018. MDPI, 2(13), Article ID 999.
Open this publication in new window or tab >>UV-assisted gate bias cycling in gas-sensitive field-effect transistors
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2018 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

Place, publisher, year, edition, pages
MDPI, 2018
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-162239 (URN)10.3390/proceedings2130999 (DOI)
Conference
EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2024-08-23Bibliographically approved
Bastuck, M., Puglisi, D., Möller, P., Reimringer, W., Schuetze, A., Lloyd Spetz, A. & Andersson, M. (2017). Low-cost chemical gas sensors for selective formaldehyde quantification at ppb-level in field tests. In: : . Paper presented at AMA Conferences 2017 - Sensor 2017 and IRS2 2017, Germany, 30 May - 1 June, 2017 (pp. 702-707).
Open this publication in new window or tab >>Low-cost chemical gas sensors for selective formaldehyde quantification at ppb-level in field tests
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2017 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Data from a silicon carbide based field-effect transistor were recorded over a period of nine days in a ventilated school room. For enhanced sensitivity and selectivity especially to formaldehyde, porous iridium on pulsed laser deposited tungsten trioxide was used as sensitive layer, in combination with temperature cycled operation and subsequent multivariate data processing techniques. The sensor signal was compared to reference measurements for formaldehyde concentration, CO2 concentration, temperature, and relative humidity. The results show a distinct pattern for the reference formaldehyde concentration, arising from the day/night cycle. Taking this into account, the projections of both principal component analysis and partial least squares regression lead to almost the same result concerning correlation to the reference. The sensor shows cross-sensitivity to an unidentified component of human activity, presumably breath, and, possibly, to other compounds appearing together with formaldehyde in indoor air. Nevertheless, the sensor is able to detect and partially quantify formaldehyde below 40 ppb with a correlation to the reference of 0.48 and negligible interference from ambient temperature or relative humidity.

Keywords
SiC-FET, multivariate data processing, indoor air quality, VOC, sick building syndrome
National Category
Engineering and Technology Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-162246 (URN)
Conference
AMA Conferences 2017 - Sensor 2017 and IRS2 2017, Germany, 30 May - 1 June, 2017
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2021-09-30Bibliographically approved
Erdtman, E., Andersson, M., Lloyd Spetz, A. & Ojamäe, L. (2017). Simulations of the thermodynamics and kinetics of NH3 at the RuO2 (110) surface. Surface Science, 656, 77-85
Open this publication in new window or tab >>Simulations of the thermodynamics and kinetics of NH3 at the RuO2 (110) surface
2017 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 656, p. 9p. 77-85Article in journal (Refereed) Published
Abstract [en]

Ruthenium(IV)oxide (RuO2) is a material used for various purposes. It acts as a catalytic agent in several reactions, for example oxidation of carbon monoxide. Furthermore, it is used as gate material in gas sensors. In this work theoretical and computational studies were made on adsorbed molecules on RuO2 (110) surface, in order to follow the chemistry on the molecular level. Density functional theory calculations of the reactions on the surface have been performed. The calculated reaction and activation energies have been used as input for thermodynamic and kinetics calculations. A surface phase diagram was calculated, presenting the equilibrium composition of the surface at different temperature and gas compositions. The kinetics results are in line with the experimental studies of gas sensors, where water has been produced on the surface, and hydrogen is found at the surface which is responsible for the sensor response.

Place, publisher, year, edition, pages
Elsevier, 2017. p. 9
Keywords
Catalysis; Kinetics; Ruthenium dioxide; Sensor; Surface; Thermodynamics
National Category
Analytical Chemistry
Identifiers
urn:nbn:se:liu:diva-133425 (URN)10.1016/j.susc.2016.10.006 (DOI)000390969300012 ()
Available from: 2016-12-28 Created: 2016-12-28 Last updated: 2018-11-26
Puglisi, D., Eriksson, J., Andersson, M., Huotari, J., Bastuck, M., Bur, C., . . . Lloyd Spetz, A. (2016). Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors. Paper presented at 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015. Materials Science Forum, 858, 997-1000
Open this publication in new window or tab >>Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 997-1000Article in journal (Refereed) Published
Abstract [en]

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keywords
Field Effect Transistor, Gas Sensor, Iridium/Tungsten Trioxide, Benzene, 4H-SiC
National Category
Environmental Engineering
Identifiers
urn:nbn:se:liu:diva-124153 (URN)10.4028/www.scientific.net/MSF.858.997 (DOI)
Conference
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
Projects
SENSIndoor, www.sensindoor.eu
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2016-01-20 Created: 2016-01-20 Last updated: 2020-02-17
Sobocinski, M., Myllymäki, S., Nello, M., Andersson, M., Juuti, J., Kilpijärvi, J., . . . Lloyd Spetz, A. (2016). Laser shaped thick-film IDE for nanoparticle detection at high frequencies. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>Laser shaped thick-film IDE for nanoparticle detection at high frequencies
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129118 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Andersson, M., Bastuk, M., Huotari, J., Puglisi, D., Schütze, A., Lappalainen, J. & Lloyd Spetz, A. (2016). Optimization of the Field Effect Transistor transducer platform for the development of air quality sensors. In: Proceedings EMRS 2016: . Paper presented at EMRS 2016.
Open this publication in new window or tab >>Optimization of the Field Effect Transistor transducer platform for the development of air quality sensors
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2016 (English)In: Proceedings EMRS 2016, 2016Conference paper, Oral presentation with published abstract (Refereed)
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-129120 (URN)
Conference
EMRS 2016
Available from: 2016-06-12 Created: 2016-06-12 Last updated: 2016-06-28
Puglisi, D., Eriksson, J., Bur, C., Schuetze, A., Lloyd Spetz, A. & Andersson, M. (2015). Catalytic metal-gate field effect transistors based on SiC for indoor air quality control. Paper presented at E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014. Journal of Sensors and Sensor Systems, 4, 1-8
Open this publication in new window or tab >>Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
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2015 (English)In: Journal of Sensors and Sensor Systems, ISSN 2194-8771, Vol. 4, p. 1-8Article in journal (Refereed) Published
Abstract [en]

High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoorair quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330° C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Place, publisher, year, edition, pages
Germany: Copernicus, 2015
Keywords
silicon carbide, field effect transistor, volatile organic compounds, air quality control
National Category
Other Engineering and Technologies
Identifiers
urn:nbn:se:liu:diva-113295 (URN)10.5194/jsss-4-1-2015 (DOI)
Conference
E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014
Projects
SENSIndoor (grant agreement no. 604311)
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2015-01-15 Created: 2015-01-15 Last updated: 2025-02-10Bibliographically approved
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