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BETA
Paskov, Plamen P.
Alternative names
Publications (10 of 136) Show all publications
Bartos, I., Romanyuk, O., Houdkova, J., Paskov, P., Paskova, T. & Jiricek, P. (2016). Correction: Electron band bending of polar, semipolar and non-polar GaN surfaces (vol 119, 105303, 2016). Journal of Applied Physics, 119(15), 159901
Open this publication in new window or tab >>Correction: Electron band bending of polar, semipolar and non-polar GaN surfaces (vol 119, 105303, 2016)
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 15, p. 159901-Article in journal (Refereed) Published
Abstract [en]

n/a

Place, publisher, year, edition, pages
AMER INST PHYSICS, 2016
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-130308 (URN)10.1063/1.4947183 (DOI)000378991800043 ()
Available from: 2016-07-31 Created: 2016-07-28 Last updated: 2017-11-28
Bartos, I., Romanyuk, O., Houdkova, J., Paskov, P., Paskova, T. & Jiricek, P. (2016). Electron band bending of polar, semipolar and non-polar GaN surfaces. Journal of Applied Physics, 119(10), 105303
Open this publication in new window or tab >>Electron band bending of polar, semipolar and non-polar GaN surfaces
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2016 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, no 10, p. 105303-Article in journal (Refereed) Published
Abstract [en]

The magnitudes of the surface band bending have been determined by X-ray photoelectron spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All surfaces have been prepared from crystalline GaN samples grown by the hydride-vapour phase epitaxy and separated from sapphire substrates. The Ga 3d core level peak shifts have been used for band bending determination. Small band bending magnitudes and also relatively small difference between the band bendings of the surfaces with opposite polarity have been found. These results point to the presence of electron surface states of different amounts and types on surfaces of different polarity and confirm the important role of the electron surface states in compensation of the bound surface polarity charges in wurtzite GaN crystals. (C) 2016 AIP Publishing LLC.

Place, publisher, year, edition, pages
AMER INST PHYSICS, 2016
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-127439 (URN)10.1063/1.4943592 (DOI)000372976900029 ()
Note

Funding Agencies|Academy of Sciences of the Czech Republic [M100101201]; Czech Science Foundation (GACR) [15-01687S]; NSF [DMR-1207075, OISE-1458427]; Swedish Energy Agency [P39897-1]

Available from: 2016-04-30 Created: 2016-04-26 Last updated: 2017-11-30
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Khromov, S., . . . Akasaki, I. (2014). Properties of the main Mg-related acceptors in GaN from optical and structural studies. Journal of Applied Physics, 115(5), 053507
Open this publication in new window or tab >>Properties of the main Mg-related acceptors in GaN from optical and structural studies
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 5, p. 053507-Article in journal (Refereed) Published
Abstract [en]

The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in the light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be the main optical signature of the substitutional Mg-Ga acceptor, thus, having a rather large binding energy and a strong phonon coupling in optical transitions. We present new experimental data on homoepitaxial Mg-doped layers, which together with the previous collection of data give an improved experimental picture of the various luminescence features in Mg-doped GaN. In n-type GaN with moderate Mg doping (less than10(18) cm(-3)), the 3.466 eV ABE1 acceptor bound exciton and the associated 3.27eV donor-acceptor pair (DAP) band are the only strong photoluminescence (PL) signals at 2 K, and are identified as related to the substitutional Mg acceptor with a binding energy of 0.225 +/- 0.005 eV, and with a moderate phonon coupling strength. Interaction between basal plane stacking faults (BSFs) and Mg acceptors is suggested to give rise to a second deeper Mg acceptor species, with optical signatures ABE2 at 3.455 eV and a corresponding weak and broad DAP peak at about 3.15 eV. The 2.9 eV PL band has been ascribed to many different processes in the literature. It might be correlated with another deep level having a low concentration, only prominent at high Mg doping in material grown by the Metal Organic Chemical Vapor Deposition technique. The origin of the low temperature metastability of the Mg-related luminescence observed by many authors is here reinterpreted and explained as related to a separate non-radiative metastable deep level defect, i.e., not the Mg-Ga acceptor. (C) 2014 AIP Publishing LLC.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-105582 (URN)10.1063/1.4862928 (DOI)000331645900013 ()
Available from: 2014-03-28 Created: 2014-03-27 Last updated: 2017-12-05
Monemar, B., Khromov, S., Pozina, G., Paskov, P., Bergman, P., Hemmingsson, C., . . . Morkoc, H. (2013). Luminescence of Acceptors in Mg-Doped GaN. Japanese Journal of Applied Physics, 52(8)
Open this publication in new window or tab >>Luminescence of Acceptors in Mg-Doped GaN
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2013 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 52, no 8Article in journal (Refereed) Published
Abstract [en]

Recent photoluminescence (PL) data for Mg-doped GaN at 2 K are discussed, with reference to published theoretical calculations of the electronic level structure. It is concluded that the typical PL peaks at 3.466 eV (acceptor bound exciton ABE1) and the broader 3.27 eV donor-acceptor pair (DAP) PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.

Place, publisher, year, edition, pages
Japan Society of Applied Physics, 2013
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-98151 (URN)10.7567/JJAP.52.08JJ03 (DOI)000323883100123 ()
Note

Funding Agencies|K. A. Wallenberg Foundation||Swedish Energy Agency||Li-Li NFM Center at Linkoping University||

Available from: 2013-09-30 Created: 2013-09-30 Last updated: 2017-12-06
Hsu, C.-W., Ganguly, A., Chen, C.-P., Kuo, C.-C., Paskov, P., Holtz, P.-O., . . . Chen, K.-H. (2011). Optical properties of functionalized GaN nanowires. JOURNAL OF APPLIED PHYSICS, 109(5), 053523
Open this publication in new window or tab >>Optical properties of functionalized GaN nanowires
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2011 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 109, no 5, p. 053523-Article in journal (Refereed) Published
Abstract [en]

The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results.

Place, publisher, year, edition, pages
American Institute of Physics, 2011
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-67158 (URN)10.1063/1.3552919 (DOI)000288387900046 ()
Note
Original Publication: Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen, Optical properties of functionalized GaN nanowires, 2011, JOURNAL OF APPLIED PHYSICS, (109), 5, 053523. http://dx.doi.org/10.1063/1.3552919 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2011-04-01 Created: 2011-04-01 Last updated: 2011-12-29
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Lindgren, D., . . . Ohlsson, J. (2011). Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates. In: Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon (Ed.), Gallium Nitride Materials and Devices VI: . Paper presented at Gallium Nitride Materials and Devices VI, San Francisco, California, United States, 24–27 January 2011 (pp. 793907). SPIE - International Society for Optical Engineering, 7939
Open this publication in new window or tab >>Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
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2011 (English)In: Gallium Nitride Materials and Devices VI / [ed] Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, SPIE - International Society for Optical Engineering, 2011, Vol. 7939, p. 793907-Conference paper, Published paper (Refereed)
Abstract [en]

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the low temperature BE spectra on excitation intensity as well as the transient decay behavior demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also demonstrated and briefly discussed.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2011
Series
Proceedings of SPIE - International Society for Optical Engineering, ISSN 0277-786X ; Vol. 7939
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-73568 (URN)10.1117/12.874687 (DOI)9780819484765 (ISBN)
Conference
Gallium Nitride Materials and Devices VI, San Francisco, California, United States, 24–27 January 2011
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2015-09-22Bibliographically approved
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Lindgren, D., . . . Ohlsson, J. (2011). Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1532-1534
Open this publication in new window or tab >>Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
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2011 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 208, no 7, p. 1532-1534Article in journal (Refereed) Published
Abstract [en]

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependece of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23eV Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly disussed. (C) 2011 WILEY-VCH Verlag Gmbh andamp; Co. KGaA, Weinheim

Place, publisher, year, edition, pages
Wiley-VCH Verlag Berlin, 2011
Keywords
GaN, Mg-doping, MOCVD, m-plane, nanowire, photoluminescence
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-70279 (URN)10.1002/pssa.201001036 (DOI)000293803600013 ()
Note
Funding Agencies|K. A. Wallenberg Foundation||Swedish Energy Agency||Available from: 2011-08-30 Created: 2011-08-30 Last updated: 2015-09-22
Gil, B., Bigenwald, P., Paskov, P. & Monemar, B. (2010). Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors. PHYSICAL REVIEW B, 81(8), 085211
Open this publication in new window or tab >>Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
2010 (English)In: PHYSICAL REVIEW B, ISSN 1098-0121, Vol. 81, no 8, p. 085211-Article in journal (Refereed) Published
Abstract [en]

We describe the internal structure of acceptor-bound excitons in wurtzite semiconductors. Our approach consists in first constructing, in the context of angular momentum algebra, the wave functions of the two-hole system that fulfill Paulis exclusions principle. Second, we construct the acceptor-bound exciton states by adding the electron states in a similar manner that two-hole states are constructed. We discuss the optical selection rules for the acceptor-bound exciton recombination. Finally, we compare our theory with experimental data for CdS and GaN. In the specific case of CdS for which much experimental information is available, we demonstrate that, compared with cubic semiconductors, the sign of the short-range hole-exchange interaction is reversed and more than one order of magnitude larger. The whole set of data is interpreted in the context of a large value of the short-range hole-exchange interaction Xi(0)=3.4 +/- 0.2 meV. This value dictates the splitting between the ground-state line I-1 and the other transitions. The values we find for the electron-hole spin-exchange interaction and of the crystal-field splitting of the two-hole state are, respectively, -0.4 +/- 0.1 and 0.2 +/- 0.1 meV. In the case of GaN, the experimental data for the acceptor-bound excitons in the case of Mg and Zn acceptors, show more than one bound-exciton line. We discuss a possible assignment of these states.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-54496 (URN)10.1103/PhysRevB.81.085211 (DOI)000275053300064 ()
Note
Original Publication: Bernard Gil, Pierre Bigenwald, Plamen Paskov and Bo Monemar, Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors, 2010, PHYSICAL REVIEW B, (81), 8, 085211. http://dx.doi.org/10.1103/PhysRevB.81.085211 Copyright: American Physical Society http://www.aps.org/ Available from: 2010-03-19 Created: 2010-03-19 Last updated: 2010-03-19
Monemar, B. & Paskov, P. (2010). Luminescence Studies of Impurities and Defects in III-Nitride Semiconductors. In: Leah Bergman, Jeanne L McHale (Ed.), Handbook of Luminescent Semiconductor Materials: (pp. 169-190). CRC Press
Open this publication in new window or tab >>Luminescence Studies of Impurities and Defects in III-Nitride Semiconductors
2010 (English)In: Handbook of Luminescent Semiconductor Materials / [ed] Leah Bergman, Jeanne L McHale, CRC Press, 2010, p. 169-190Chapter in book (Other academic)
Abstract [en]

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging.

After introducing basic semiconductor theory and photoluminescence principles, the book focuses on the optical properties of wide-bandgap semiconductors, such as AlN, GaN, and ZnO. It then presents research on narrow-bandgap semiconductors and solid-state lighting. The book also covers the optical properties of semiconductors in the nanoscale regime, including quantum dots and nanocrystals.

This handbook explains how photoluminescence spectroscopy is a powerful and practical analytical tool for revealing the fundamentals of light interaction and, thus, the optical properties of semiconductors. The book shows how luminescent semiconductors are used in lasers, photodiodes, infrared detectors, light-emitting diodes, solid-state lamps, solar energy, and biological imaging.

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Place, publisher, year, edition, pages
CRC Press, 2010
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-73571 (URN)978-1439-834-67-1 (ISBN)
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2013-09-20Bibliographically approved
Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Amano, H., . . . Usiui, A. (2010). Mg related acceptors in GaN. In: Phys. Status Solidi C 7. Paper presented at 8th International Conference on Nitride Semiconductors (pp. 1850).
Open this publication in new window or tab >>Mg related acceptors in GaN
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2010 (English)In: Phys. Status Solidi C 7, 2010, p. 1850-Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-65354 (URN)
Conference
8th International Conference on Nitride Semiconductors
Available from: 2011-02-04 Created: 2011-02-04 Last updated: 2015-09-22
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