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Herlogsson, Lars
Publications (10 of 13) Show all publications
Tu, D., Herlogsson, L., Kergoat, L., Crispin, X. & Berggren, M. (2011). A Static Model for Electrolyte-Gated Organic Field-Effect Transistors. IEEE Transactions on Electron Devices, 58(10), 3574-3582
Open this publication in new window or tab >>A Static Model for Electrolyte-Gated Organic Field-Effect Transistors
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2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 10, p. 3574-3582Article in journal (Refereed) Published
Abstract [en]

We present a dc model to simulate the static performance of electrolyte-gated organic field-effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed fromvoltage-dependent electric-doublelayer capacitance. The voltage-dependent contact effect and short-channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2011
Keywords
Electric-double-layer capacitance, field-effect transistors, parameter extraction, polymer electrolyte, static model
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-71549 (URN)10.1109/TED.2011.2162648 (DOI)000295100300045 ()
Note

Funding Agencies|Center of Organic Electronics, Linkoping University, Sweden||Strategic Research Foundation SSF||

Available from: 2011-10-21 Created: 2011-10-21 Last updated: 2023-12-06
Laiho, A., Herlogsson, L., Forchheimer, R., Crispin, X. & Berggren, M. (2011). Controlling the dimensionality of charge transport in organic thin-film transistors. Proceedings of the National Academy of Sciences of the United States of America, 108(37), 15069-15073
Open this publication in new window or tab >>Controlling the dimensionality of charge transport in organic thin-film transistors
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2011 (English)In: Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, E-ISSN 1091-6490, Vol. 108, no 37, p. 15069-15073Article in journal (Refereed) Published
Abstract [en]

Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical transistors which, on the contrary, switch slowly. An attractive approach would be to combine the benefits of the field-effect and the electrochemical transistors into one transistor that would both switch fast and carry high current densities. Here we report the development of a polyelectrolyte-gated OTFT based on conjugated polyelectrolytes, and we demonstrate that the OTFTs can be controllably operated either in the field-effect or the electrochemical regime. Moreover, we show that the extent of electrochemical doping can be restricted to a few monolayers of the conjugated polyelectrolyte film, which allows both high current densities and fast switching speeds at the same time. We propose an operation mechanism based on self-doping of the conjugated polyelectrolyte backbone by its ionic side groups.

Place, publisher, year, edition, pages
National Academy of Sciences, 2011
Keywords
conducting polymers; organic electronics
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-71099 (URN)10.1073/pnas.1107063108 (DOI)000294804900022 ()
Available from: 2011-09-30 Created: 2011-09-30 Last updated: 2023-12-06
Herlogsson, L. (2011). Electrolyte-Gated Organic Thin-Film Transistors. (Doctoral dissertation). Linköping: Linköping University Electronic Press
Open this publication in new window or tab >>Electrolyte-Gated Organic Thin-Film Transistors
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many of the envisioned applications will use printed batteries, organic solar cells or electromagnetic coupling for powering. This requires that the included devices are power efficient and can operate at low voltages.

This thesis is focused on organic thin-film transistors that employ electrolytes as gate insulators. The high capacitance of the electrolyte layers allows the transistors to operate at very low voltages, at only 1 V. Polyanion-gated p-channel transistors and polycation-gated n-channel transistors are demonstrated. The mobile ions in the respective polyelectrolyte are attracted towards the gate electrode during transistor operation, while the polymer ions create a stable interface with the charged semiconductor channel. This suppresses electrochemical doping of the semiconductor bulk, which enables the transistors to fully operate in the field-effect mode. As a result, the transistors display relatively fast switching (≤ 100 µs). Interestingly, the switching speed of the transistors saturates as the channel length is reduced. This deviation from the downscaling rule is explained by that the ionic relaxation in the electrolyte limits the channel formation rather than the electronic transport in the semiconductor. Moreover, both unipolar and complementary integrated circuits based on polyelectrolyte-gated transistors are demonstrated. The complementary circuits operate at supply voltages down to 0.2 V, have a static power consumption of less than 2.5 nW per gate and display signal propagation delays down to 0.26 ms per stage. Hence, polyelectrolyte-gated circuits hold great promise for printed electronics applications driven by low-voltage and low-capacity power sources.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. p. 62
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1389
Keywords
Organic electronics, Thin-film transistor, Organic semiconductor, Polymer, Electrolyte, Polyelectrolyte
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-69636 (URN)978-91-7393-088-8 (ISBN)
Public defence
2011-08-26, K3, Kåkenhus, Campus Norrköping, Linköpings universitet, Norrköping, 10:15 (English)
Opponent
Supervisors
Available from: 2011-08-15 Created: 2011-07-08 Last updated: 2019-12-19Bibliographically approved
Tu, D., Forchheimer, R., Herlogsson, L., Crispin, X. & Berggren, M. (2011). Parameter extraction for electrolyte-gated organic field effect transistor modeling. In: : . Paper presented at 20th European Conference on Circuit Theory and Design (ECCTD) (pp. 853-856). IEEE conference proceedings
Open this publication in new window or tab >>Parameter extraction for electrolyte-gated organic field effect transistor modeling
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2011 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We present a methodology to extract parameters for an electrolyte-gated organic field effect transistor DC model. The model is based on charge drift/diffusion transport under electric field and covers all regimes. Voltage dependent capacitance, mobility, contact resistance and threshold voltage shift are taken into account in this model. The feature parameters in the model are simply extracted from the transfer or output characteristics of electrolyte-gated organic field effect transistors. The extracted parameters are verified by good agreements between experimental and simulated results.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2011
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-73402 (URN)10.1109/ECCTD.2011.6043825 (DOI)978-1-4577-0616-5 (ISBN)
Conference
20th European Conference on Circuit Theory and Design (ECCTD)
Available from: 2012-01-03 Created: 2012-01-03 Last updated: 2023-12-06Bibliographically approved
Herlogsson, L., Crispin, X., Tierney, S. & Berggren, M. (2011). Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage. Advanced Materials, 23(40), 4684
Open this publication in new window or tab >>Polyelectrolyte-Gated Organic Complementary Circuits Operating at Low Power and Voltage
2011 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 23, no 40, p. 4684-Article in journal (Refereed) Published
Abstract [en]

In this work, polyanionic and polycationic electrolytes are used as gate insulators in p- and n-channel thin-film transistors, respectively. These material combinations are motivated by that the mobile ions in the electrolytes will be attracted to the oppositely charged gate electrodes when the transistors are operated in the accumulation mode. The electronic charges in the semiconductor channels will thus be balanced by the polyions, which are effectively immobile and cannot penetrate into the semiconductor bulk and cause electrochemical doping.

Place, publisher, year, edition, pages
Wiley-Blackwell, 2011
Keywords
Organic electronics, Conjugated polymers, Polyelectrolytes, Thin-film transistors, Oscillators
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-69638 (URN)10.1002/adma.201101757 (DOI)000297009000014 ()
Note
Funding agencies|EU| 212311 |Swedish Government (Advanced Functional Materials)||Swedish Foundation for Strategic Research (OPEN)||Knut and Alice Wallenberg Foundation||Onnesjo Foundation||Available from: 2011-07-08 Created: 2011-07-08 Last updated: 2023-12-06Bibliographically approved
Kergoat, L., Herlogsson, L., Braga, D., Piro, B., Pham, M.-C., Crispin, X., . . . Horowitz, G. (2010). A Water-Gate Organic Field-Effect Transistor. Advanced Materials, 22(23), 2565-2569
Open this publication in new window or tab >>A Water-Gate Organic Field-Effect Transistor
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2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 23, p. 2565-2569Article in journal (Refereed) Published
Abstract [en]

High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.

Place, publisher, year, edition, pages
John Wiley and Sons, Ltd, 2010
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-58247 (URN)10.1002/adma.200904163 (DOI)000279711100014 ()
Available from: 2010-08-10 Created: 2010-08-09 Last updated: 2023-12-06Bibliographically approved
Herlogsson, L., Cölle, M., Tierney, S., Crispin, X. & Berggren, M. (2010). Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors. Advanced Materials, 22(1), 72-76
Open this publication in new window or tab >>Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors
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2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 1, p. 72-76Article in journal (Refereed) Published
Abstract [en]

A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

Keywords
organic electronics, oscillators, polyelectrolytes, thin-film transistors
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-53026 (URN)10.1002/adma.200901850 (DOI)
Available from: 2010-01-14 Created: 2010-01-14 Last updated: 2023-12-06Bibliographically approved
Crispin, X., Herlogsson, L., Larsson, O., Said, E. & Berggren, M. (2010). Polyelectrolyte-Gated Organic Field-Effect Transistors. In: Janell Leger, Magnus Berggren, Sue Carter (Ed.), Iontronics: Ionic Carriers in Organic Electronic Materials and Devices (pp. 193-218). Boca Raton: CRC Press; Taylor & Francis Group
Open this publication in new window or tab >>Polyelectrolyte-Gated Organic Field-Effect Transistors
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2010 (English)In: Iontronics: Ionic Carriers in Organic Electronic Materials and Devices / [ed] Janell Leger, Magnus Berggren, Sue Carter, Boca Raton: CRC Press; Taylor & Francis Group , 2010, p. 193-218Chapter in book (Other academic)
Abstract [en]

The field of organic electronics promises exciting new technologies based on inexpensive and mechanically flexible electronic devices. It has progressed over the past three decades to the point of commercial viability and is projected to grow to a 30 billion dollar market by the year 2015. Exploring new applications and device architectures, this book sets the tone for that exploration, gathering a community of experts in this area who are focused on the use of ionic functions to define the principle of operation in polymer devices. The contributors detail relevant technologies based on organic electronics, including polymer electrochromic devices and light-emitting electrochemical cells.

Place, publisher, year, edition, pages
Boca Raton: CRC Press; Taylor & Francis Group, 2010
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-62543 (URN)978-1-4398-0688-3 (ISBN)978-1-4398-0689-0 (ISBN)
Available from: 2010-11-30 Created: 2010-11-30 Last updated: 2023-12-06Bibliographically approved
Liu, J., Herlogsson, L., Sawadtee, A., Favia, P., Sandberg, M., Crispin, X., . . . Berggren, M. (2010). Vertical polyelectrolyte-gated organic field-effect transistors. Applied Physics Letters, 97, 103303
Open this publication in new window or tab >>Vertical polyelectrolyte-gated organic field-effect transistors
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, p. 103303-Article in journal (Refereed) Published
Abstract [en]

Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.

Place, publisher, year, edition, pages
American Institute of Physics, 2010
Keywords
organic field effect transistors, organic semiconductors, photolithography, polymer electrolytes
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-59578 (URN)10.1063/1.3488000 (DOI)000282478800049 ()
Note
Original Publication: Jiang Liu, Lars Herlogsson, A Sawadtee, P Favia, M Sandberg, Xavier Crispin, Isak Engquist and Magnus Berggren, Vertical polyelectrolyte-gated organic field-effect transistors, 2010, Applied Physics Letters, (97), , 103303. http://dx.doi.org/10.1063/1.3488000 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2010-09-21 Created: 2010-09-21 Last updated: 2023-12-06
Hamedi, M., Herlogsson, L., Crispin, X., Marcilla, R., Berggren, M. & Inganäs, O. (2009). Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles. Advanced Materials, 21(5), 573-577
Open this publication in new window or tab >>Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
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2009 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 21, no 5, p. 573-577Article in journal (Refereed) Published
Abstract [en]

Electrolyte-gate organic field-effect transistors embedded at the junction of textile microfibers are demonstrated. The fiber transistor operates below I V and delivers large current densities. The transience of the organic thin-film transistors current and the impedance spectroscopy measurements reveal that the channel is formed in two steps.

Keywords
Conducting polymers, electronic textile, fiber transistor, field-effect transistor
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-16982 (URN)10.1002/adma.200802681 (DOI)
Available from: 2009-03-01 Created: 2009-02-27 Last updated: 2023-12-06Bibliographically approved
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