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Zhang, P., Sadeghimeresht, E., Chen, S., Li, X.-H., Markocsan, N., Joshi, S., . . . Peng, R. L. (2019). Effects of Surface Finish on the Initial Oxidation of HVAF-sprayed NiCoCrAlY Coatings. Surface & Coatings Technology, 364, 43-56
Open this publication in new window or tab >>Effects of Surface Finish on the Initial Oxidation of HVAF-sprayed NiCoCrAlY Coatings
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2019 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Journal of Surface and Coatings Technology, ISSN 0257-8972, Vol. 364, p. 43-56Article in journal (Refereed) Published
Abstract [en]

Oxide scale formed on HVAF-sprayed NiCoCrAlY coatings and the effect of surface treatment were investigated by a multi-approach study combining photo-stimulated luminescence, microstructural observation and mass gain. The initial oxidationbehaviour of as-sprayed, polished and shot-peened coatings at 1000 °C is studied. Both polished and shot-peened coatings exhibited superior performance due to rapid formation of α-Al2O3 fully covering the coating and suppressing the growth of transient alumina, assisted by a high density of α-Al2O3 nuclei on surface treatment induced defects. Moreover, the fast development of a two-layer alumina scale consisting of an inward-grown inner α-Al2O3 layer and an outer layer transformed from outward-grown transient alumina resulted in a higher oxide growth rate of the as-sprayed coating.

Place, publisher, year, edition, pages
Elsevier: Elsevier, 2019
Keywords
Oxidation, Transient ot alpha transformation, Surface treatment, Polishing, Shot-peening, Photo-stimulated liminescence spectroscopy
National Category
Materials Engineering
Identifiers
urn:nbn:se:liu:diva-154936 (URN)10.1016/j.surfcoat.2019.02.068 (DOI)000463302800006 ()2-s2.0-85062231529 (Scopus ID)
Note

Funding agencies: Siemens Industrial Turbomachinery AB (Finspang, Sweden) [KME-703]; Swedish Energy Agency through KME consortium [KME-703]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00

Available from: 2019-03-06 Created: 2019-03-06 Last updated: 2019-06-28Bibliographically approved
Goransson, D. J., Borgstrom, M. T., Huang, Y., Messing, M. E., Hessman, D., Buyanova, I. A., . . . Xu, H. Q. (2019). Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires. Nano letters (Print), 19(4), 2674-2681
Open this publication in new window or tab >>Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires
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2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, no 4, p. 2674-2681Article in journal (Refereed) Published
Abstract [en]

We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (mu PL) spectroscopy, and micro-Raman (mu-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the mu PL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2019
Keywords
Strain; core-shell nanowire; wurtzite; InAsP; InP; mu PL; mu-Raman
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-157241 (URN)10.1021/acs.nanolett.9b00644 (DOI)000464769100066 ()30908918 (PubMedID)2-s2.0-85064175484 (Scopus ID)
Note

Funding Agencies|Myfab; Swedish Research Council (VR); Ministry of Science and Technology of China through the National Key Research and Development Program of China [2017YFA0303304, 2016YFA0300601]; National Natural Science Foundation of China [11874071, 91221202, 91421303]

Available from: 2019-06-13 Created: 2019-06-13 Last updated: 2019-06-18Bibliographically approved
Stehr, J. E., Buyanova, I. A. & Chen, W. (Eds.). (2018). Defects in Advanced Electronic Materials and Novel Low Dimensional Structures (1ed.). Woodhead Publishing Limited
Open this publication in new window or tab >>Defects in Advanced Electronic Materials and Novel Low Dimensional Structures
2018 (English)Collection (editor) (Other academic)
Abstract [en]

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory.

While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap.

Place, publisher, year, edition, pages
Woodhead Publishing Limited, 2018. p. 306 Edition: 1
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-156116 (URN)9780081020531 (ISBN)9780081020548 (ISBN)
Available from: 2019-04-03 Created: 2019-04-03 Last updated: 2019-04-03Bibliographically approved
Buyanova, I. A., Ishikawa, F. & Chen, W. (2017). GaNAs-⁠Based Nanowires for Near-⁠infrared Optoelectronics. In: F. Ishikawa; I. A. Buyanova (Ed.), Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications: . Pan Stanford Publishing
Open this publication in new window or tab >>GaNAs-⁠Based Nanowires for Near-⁠infrared Optoelectronics
2017 (English)In: Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications / [ed] F. Ishikawa; I. A. Buyanova, Pan Stanford Publishing, 2017Chapter in book (Other academic)
Place, publisher, year, edition, pages
Pan Stanford Publishing, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141233 (URN)9789814745765 (ISBN)9781315364407 (ISBN)
Available from: 2017-09-27 Created: 2017-09-27 Last updated: 2018-06-05Bibliographically approved
Huang, Y., Song, Y. X., Wang, S. M., Buyanova, I. A. & Chen, W. (2017). Generation of helicity-dependent surface spin photocurrent in 3D topological insulator Bi2Te3 (invited talk). In: : . Paper presented at 2nd Int. Conf. on Physics of 2D Crystals, Ha Long, Vietnam, April 25-30 2017..
Open this publication in new window or tab >>Generation of helicity-dependent surface spin photocurrent in 3D topological insulator Bi2Te3 (invited talk)
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2017 (English)Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141018 (URN)
Conference
2nd Int. Conf. on Physics of 2D Crystals, Ha Long, Vietnam, April 25-30 2017.
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2017-09-29Bibliographically approved
Buyanova, I. A., Tu, C. W. & Chen, W. (2017). Novel GaNP Nanowires for Advanced Optoelectronics and Photonics. In: F. Ishikawa; I. A. Buyanova (Ed.), Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications: . Pan Stanford Publishing
Open this publication in new window or tab >>Novel GaNP Nanowires for Advanced Optoelectronics and Photonics
2017 (English)In: Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications / [ed] F. Ishikawa; I. A. Buyanova, Pan Stanford Publishing, 2017Chapter in book (Other academic)
Place, publisher, year, edition, pages
Pan Stanford Publishing, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141234 (URN)9789814745765 (ISBN)9781315364407 (ISBN)
Available from: 2017-09-27 Created: 2017-09-27 Last updated: 2018-06-05Bibliographically approved
Puttisong, Y., Buyanova, I. A. & Chen, W. (2017). Room Temperature Defect-Engineered Spin Functionalities: Concept and Optimization. In: Supriyo Bandyopadhyay (Virginia Commonwealth University, USA), Marc Cahay (University of Cincinnati, USA), Jean-Pierre Leburton (University of Illinois at Urbana-Champaign, USA) (Ed.), Contemporary Topics in Semiconductor Spintronics: . World Scientific
Open this publication in new window or tab >>Room Temperature Defect-Engineered Spin Functionalities: Concept and Optimization
2017 (English)In: Contemporary Topics in Semiconductor Spintronics / [ed] Supriyo Bandyopadhyay (Virginia Commonwealth University, USA), Marc Cahay (University of Cincinnati, USA), Jean-Pierre Leburton (University of Illinois at Urbana-Champaign, USA), World Scientific, 2017Chapter in book (Other academic)
Place, publisher, year, edition, pages
World Scientific, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-140630 (URN)978-981-3149-81-6 (ISBN)978-981-3149-83-0 (ISBN)
Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2017-09-15Bibliographically approved
Huang, Y., Song, Y. X., Wang, S. M., Buyanova, I. A. & Chen, W. (2017). Spin texture and spin injection in a 3D topological insulator (invited talk). In: : . Paper presented at the Nano-Micro Conference 2017, Shanghai, China, June19-23 2017.
Open this publication in new window or tab >>Spin texture and spin injection in a 3D topological insulator (invited talk)
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2017 (English)Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141019 (URN)
Conference
the Nano-Micro Conference 2017, Shanghai, China, June19-23 2017
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2017-09-29Bibliographically approved
Stehr, J. E., Dobrovolsky, A., Kuang, K. J., Sukrittanon, S., Tu, C. W., Chen, W. & Buyanova, I. A. (2016). Defect formation and optical properties of coaxial GaP/GaNP core/shell Nanowires (invited talk). In: : . Paper presented at Energy, Materials & Nanotechnology Meeting, Prague, Czech Republic, June 21-24, 2016..
Open this publication in new window or tab >>Defect formation and optical properties of coaxial GaP/GaNP core/shell Nanowires (invited talk)
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2016 (English)Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141021 (URN)
Conference
Energy, Materials & Nanotechnology Meeting, Prague, Czech Republic, June 21-24, 2016.
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2018-04-25Bibliographically approved
Chen, W. & Buyanova, I. A. (2016). Extraordinary Defect-enabled Spin Functionalities in Semiconductors (invited talk)Extraordinary Defect-enabled Spin Functionalities in Semiconductors. In: Proc. of the 33rd Int. Conf. Phys. Semicond. (2017) in press: . Paper presented at 33rd Int. Conf. Phys. Semicond., July 31- August 5 2016, Beijing, China.
Open this publication in new window or tab >>Extraordinary Defect-enabled Spin Functionalities in Semiconductors (invited talk)Extraordinary Defect-enabled Spin Functionalities in Semiconductors
2016 (English)In: Proc. of the 33rd Int. Conf. Phys. Semicond. (2017) in press, 2016Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141017 (URN)
Conference
33rd Int. Conf. Phys. Semicond., July 31- August 5 2016, Beijing, China
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2017-09-29Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0001-7155-7103

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