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Publications (10 of 388) Show all publications
Buyanova, I. A., Ishikawa, F. & Chen, W. (2017). GaNAs-⁠Based Nanowires for Near-⁠infrared Optoelectronics. In: F. Ishikawa; I. A. Buyanova (Ed.), Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications: . Pan Stanford Publishing
Open this publication in new window or tab >>GaNAs-⁠Based Nanowires for Near-⁠infrared Optoelectronics
2017 (English)In: Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications / [ed] F. Ishikawa; I. A. Buyanova, Pan Stanford Publishing, 2017Chapter in book (Other academic)
Place, publisher, year, edition, pages
Pan Stanford Publishing, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141233 (URN)9789814745765 (ISBN)9781315364407 (ISBN)
Available from: 2017-09-27 Created: 2017-09-27 Last updated: 2018-06-05Bibliographically approved
Huang, Y., Song, Y. X., Wang, S. M., Buyanova, I. A. & Chen, W. (2017). Generation of helicity-dependent surface spin photocurrent in 3D topological insulator Bi2Te3 (invited talk). In: : . Paper presented at 2nd Int. Conf. on Physics of 2D Crystals, Ha Long, Vietnam, April 25-30 2017..
Open this publication in new window or tab >>Generation of helicity-dependent surface spin photocurrent in 3D topological insulator Bi2Te3 (invited talk)
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2017 (English)Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141018 (URN)
Conference
2nd Int. Conf. on Physics of 2D Crystals, Ha Long, Vietnam, April 25-30 2017.
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2017-09-29Bibliographically approved
Buyanova, I. A., Tu, C. W. & Chen, W. (2017). Novel GaNP Nanowires for Advanced Optoelectronics and Photonics. In: F. Ishikawa; I. A. Buyanova (Ed.), Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications: . Pan Stanford Publishing
Open this publication in new window or tab >>Novel GaNP Nanowires for Advanced Optoelectronics and Photonics
2017 (English)In: Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications / [ed] F. Ishikawa; I. A. Buyanova, Pan Stanford Publishing, 2017Chapter in book (Other academic)
Place, publisher, year, edition, pages
Pan Stanford Publishing, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141234 (URN)9789814745765 (ISBN)9781315364407 (ISBN)
Available from: 2017-09-27 Created: 2017-09-27 Last updated: 2018-06-05Bibliographically approved
Puttisong, Y., Buyanova, I. A. & Chen, W. (2017). Room Temperature Defect-Engineered Spin Functionalities: Concept and Optimization. In: Supriyo Bandyopadhyay (Virginia Commonwealth University, USA), Marc Cahay (University of Cincinnati, USA), Jean-Pierre Leburton (University of Illinois at Urbana-Champaign, USA) (Ed.), Contemporary Topics in Semiconductor Spintronics: . World Scientific
Open this publication in new window or tab >>Room Temperature Defect-Engineered Spin Functionalities: Concept and Optimization
2017 (English)In: Contemporary Topics in Semiconductor Spintronics / [ed] Supriyo Bandyopadhyay (Virginia Commonwealth University, USA), Marc Cahay (University of Cincinnati, USA), Jean-Pierre Leburton (University of Illinois at Urbana-Champaign, USA), World Scientific, 2017Chapter in book (Other academic)
Place, publisher, year, edition, pages
World Scientific, 2017
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-140630 (URN)978-981-3149-81-6 (ISBN)978-981-3149-83-0 (ISBN)
Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2017-09-15Bibliographically approved
Huang, Y., Song, Y. X., Wang, S. M., Buyanova, I. A. & Chen, W. (2017). Spin texture and spin injection in a 3D topological insulator (invited talk). In: : . Paper presented at the Nano-Micro Conference 2017, Shanghai, China, June19-23 2017.
Open this publication in new window or tab >>Spin texture and spin injection in a 3D topological insulator (invited talk)
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2017 (English)Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141019 (URN)
Conference
the Nano-Micro Conference 2017, Shanghai, China, June19-23 2017
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2017-09-29Bibliographically approved
Stehr, J. E., Dobrovolsky, A., Kuang, K. J., Sukrittanon, S., Tu, C. W., Chen, W. & Buyanova, I. A. (2016). Defect formation and optical properties of coaxial GaP/GaNP core/shell Nanowires (invited talk). In: : . Paper presented at Energy, Materials & Nanotechnology Meeting, Prague, Czech Republic, June 21-24, 2016..
Open this publication in new window or tab >>Defect formation and optical properties of coaxial GaP/GaNP core/shell Nanowires (invited talk)
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2016 (English)Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141021 (URN)
Conference
Energy, Materials & Nanotechnology Meeting, Prague, Czech Republic, June 21-24, 2016.
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2018-04-25Bibliographically approved
Chen, W. & Buyanova, I. A. (2016). Extraordinary Defect-enabled Spin Functionalities in Semiconductors (invited talk)Extraordinary Defect-enabled Spin Functionalities in Semiconductors. In: Proc. of the 33rd Int. Conf. Phys. Semicond. (2017) in press: . Paper presented at 33rd Int. Conf. Phys. Semicond., July 31- August 5 2016, Beijing, China.
Open this publication in new window or tab >>Extraordinary Defect-enabled Spin Functionalities in Semiconductors (invited talk)Extraordinary Defect-enabled Spin Functionalities in Semiconductors
2016 (English)In: Proc. of the 33rd Int. Conf. Phys. Semicond. (2017) in press, 2016Conference paper, Oral presentation only (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141017 (URN)
Conference
33rd Int. Conf. Phys. Semicond., July 31- August 5 2016, Beijing, China
Available from: 2017-09-20 Created: 2017-09-20 Last updated: 2017-09-29Bibliographically approved
Kovalchuk, A. O., Rudko, G. Y., Fediv, V. I., Chen, W. & Buyanova, I. (2016). Phosphorescence of CdS nanoparticles in polymer matrix as an indication of host-guest interaction. Materials Chemistry and Physics, 177, 379-383
Open this publication in new window or tab >>Phosphorescence of CdS nanoparticles in polymer matrix as an indication of host-guest interaction
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2016 (English)In: Materials Chemistry and Physics, ISSN 0254-0584, E-ISSN 1879-3312, Vol. 177, p. 379-383Article in journal (Refereed) Published
Abstract [en]

We report on the observation of the long-lasting low-temperature photoluminescence decay in the hybrid system nano-CdS/polyvinyl alcohol with a characteristic time of about 1.7 s. The origin of the phosphorescence is ascribed to the accumulation of photo-excited excitons in the traps within the polymeric matrix with subsequent transfer of the excitation to the embedded CdS nanoparticles. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA, 2016
Keywords
Composite materials; Nanostructures; Photoluminescence spectroscopy; Semiconductors
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-129658 (URN)10.1016/j.matchemphys.2016.04.042 (DOI)000376695400046 ()
Note

Funding Agencies|Swedish Institute via Visby program; Complex program for fundamental research of NAS Ukraine "Fundamental problem of new nanomaterials and nanotechnologies creation"

Available from: 2016-06-27 Created: 2016-06-23 Last updated: 2017-11-28
Filippov, S., Jansson, M., Stehr, J. E., Palisaitis, J., Persson, P. O. Å., Ishikawa, F., . . . Buyanova, I. A. (2016). Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires. Nanoscale, 8(35), 15939-15947
Open this publication in new window or tab >>Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires
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2016 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 8, no 35, p. 15939-15947Article in journal (Refereed) Published
Abstract [en]

Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (similar to 50-130 mu eV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2016
Keywords
GaNAs, nanowires, core/shell structures, defects, light emission, polarization
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-123938 (URN)10.1039/c6nr05168e (DOI)000382839100014 ()
Note

Funding agencies: Financial support by the Swedish Energy Agency (grant # P40119-1) and the Swedish Research Council (grants # 2015-05532 and 2008-405) is greatly appreciated. The Knut and Alice Wallenberg Foundation is gratefully acknowledged for support of the Electron Microscopy laboratory in Linkoping.

Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2018-04-25Bibliographically approved
Filippov, S., Ishikawa, F., Chen, W. M. & Buyanova, I. (2016). Structural properties of GaNAs nanowires probed by micro-Raman spectroscopy. Semiconductor Science and Technology, 31(2), Article ID 025002.
Open this publication in new window or tab >>Structural properties of GaNAs nanowires probed by micro-Raman spectroscopy
2016 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 31, no 2, article id 025002Article in journal (Refereed) Published
Abstract [en]

GaNAs-based nanowires (NWs) form a novel material system of potential importance for applications in advanced optoelectronic and photonic devices, thanks to the advantages provided by band-structure engineering, one-dimensional architecture and the possibility to combine them with mainstream silicon technology. In this work we utilize the micro-Raman scattering technique to systematically study the structural properties of such GaAs/GaNAs core/shell NW structures grown by molecular beam epitaxy on a Si substrate. It is shown that the employed one-dimensional architecture allows the fabrication of a GaNAs shell with a low degree of alloy disorder and weak residual strain, at least within the studied range of nitrogen (N) compositions [N] < 0.6%. Raman scattering by the GaAs-like and GaN-like phonons is found to be enhanced when the excitation energy approaches the E + transition energy. Since this effect is found to be more pronounced for the GaN-like phonons, the involved intermediate states are concluded to be localized in proximity to N impurities, i.e. they likely represent N-related cluster states located in proximity to E + .

Place, publisher, year, edition, pages
IOP Publishing, 2016
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-123937 (URN)10.1088/0268-1242/31/2/025002 (DOI)000372412900004 ()
Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2017-11-30Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0001-7155-7103

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