liu.seSearch for publications in DiVA
Change search
Link to record
Permanent link

Direct link
Alternative names
Publications (10 of 445) Show all publications
Ji, F., Zhang, B., Chen, W., Buyanova, I. A., Wang, F. & Boschloo, G. (2023). Amine Gas‐Induced Reversible Optical Bleaching of Bismuth‐Based Lead‐Free Perovskite Thin Films. Advanced Science
Open this publication in new window or tab >>Amine Gas‐Induced Reversible Optical Bleaching of Bismuth‐Based Lead‐Free Perovskite Thin Films
Show others...
2023 (English)In: Advanced Science, E-ISSN 2198-3844Article in journal (Refereed) Epub ahead of print
Abstract [en]

Reversible optical property changes in lead-free perovskites have recently received great interest due to their potential applications in smart windows, sensors, data encryption, and various on-demand devices. However, it is challenging to achieve remarkable color changes in their thin films. Here, methylamine gas (CH3NH2, MA0) induced switchable optical bleaching of bismuth (Bi)-based perovskite films is demonstrated for the first time. By exposure to an MA0 atmosphere, the color of Cs2AgBiBr6 (CABB) films changes from yellow to transparent, and the color of Cs3Bi2I9 (CBI) films changes from dark red to transparent. More interestingly, the underlying reason is found to be the interactions between MA0 and Bi3+ with the formation of an amorphous liquefied transparent intermediate phase, which is different from that of lead-based perovskite systems. Moreover, the generality of this approach is demonstrated with other amine gases, including ethylamine (C2H5NH2, EA0) and butylamine (CH3(CH2)3NH2, BA0), and another compound, Cs3Sb2I9, by observing a similar reversible optical bleaching phenomenon. The potential for the application of CABB and CBI films in switchable smart windows is investigated. This study provides valuable insights into the interactions between amine gases and lead-free perovskites, opening up new possibilities for high-efficiency optoelectronic and stimuli-responsive applications of these emerging Bi-based materials.

Place, publisher, year, edition, pages
WILEY, 2023
Keywords
Cs2AgBiBr6; Cs3Bi2I9; lead-free perovskites; methylamine gas; optical bleaching; smart windows
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-199657 (URN)10.1002/advs.202306391 (DOI)001118868700001 ()38044299 (PubMedID)
Note

Funding: Aforsk [21-32]

Available from: 2023-12-15 Created: 2023-12-15 Last updated: 2024-01-16
Ji, F., Klarbring, J., Zhang, B., Wang, F., Wang, L., Miao, X., . . . Gao, F. (2023). Remarkable Thermochromism in the Double Perovskite Cs2NaFeCl6. Advanced Optical Materials, Article ID 2301102.
Open this publication in new window or tab >>Remarkable Thermochromism in the Double Perovskite Cs2NaFeCl6
Show others...
2023 (English)In: Advanced Optical Materials, ISSN 2162-7568, E-ISSN 2195-1071, article id 2301102Article in journal (Refereed) Epub ahead of print
Abstract [en]

Lead-free halide double perovskites (HDPs) have emerged as a new generation of thermochromic materials. However, further materials development and mechanistic understanding are required. Here, a highly stable HDP Cs2NaFeCl6 single crystal is synthesized, and its remarkable and fully reversible thermochromism with a wide color variation from light-yellow to black over a temperature range of 10 to 423 K is investigated. First-principles, density functional theory (DFT)-based calculations indicate that the thermochromism in Cs2NaFeCl6 is an effect of electron–phonon coupling. The temperature sensitivity of the bandgap in Cs2NaFeCl6 is up to 2.52 meVK−1 based on the Varshni equation, which is significantly higher than that of lead halide perovskites and many conventional group-IV, III–V semiconductors. Meanwhile, this material shows excellent environmental, thermal, and thermochromic cycle stability. This work provides valuable insights into HDPs' thermochromism and sheds new light on developing efficient thermochromic materials.

Place, publisher, year, edition, pages
Wiley-Blackwell, 2023
National Category
Physical Chemistry
Identifiers
urn:nbn:se:liu:diva-197177 (URN)10.1002/adom.202301102 (DOI)001049682400001 ()
Funder
Knut and Alice Wallenberg Foundation, Dnr. KAW 2019.0082Swedish Energy Agency, 2018‐004357Swedish Research Council, 2021‐00357Swedish Research Council, 2019–05551Swedish Research Council, 2022–06725Swedish Research Council, 2018–05973
Note

Funding agencies: This work was financially supported by the Knut and Alice Wallenberg Foundation (Dnr. KAW 2019.0082), the Swedish Energy Agency (2018-004357), Carl Tryggers Stiftelse, Olle Engkvist Byggmästare Stiftelse, and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009-00971). I.A.A. is a Wallenberg Scholar. B.B. gratefully acknowledges financial support from the Swedish Research Council (VR) grant no. 2021-00357. F.J. was supported by the China Scholarship Council (CSC). W.N. acknowledges the Suzhou Key Laboratory of Functional Nano & Soft Materials, the Collaborative Innovation Center of Suzhou Nano Science & Technology (NANO−CIC), and the 111 Project for the financial support. S.I.S. acknowledges the support from the Swedish Research Council (VR) (Project No. 2019–05551) and the ERC (synergy grant FASTCORR project 854843). The computations were enabled by resources provided by the National Academic Infrastructure for Supercomputing in Sweden (NAISS), the Swedish National Infrastructure for Computing (SNIC) at the National Supercomputer Center (NSC), and the Center for High Performance Computing (PDC), partially funded by the Swedish Research Council through Grant Agreements No. 2022–06725 and No. 2018–05973. F.W. gratefully acknowledges financial support from the Open Project Funding of Jiangsu Key Laboratory for Carbon-based Functional Materials & Devices, Soochow University (KJS2152), and the Formas (2020-03001). M.M. acknowledges financial support from Swedish Energy Research (Grant no. 43606-1) and the Carl Tryggers Foundation (CTS20:272, CTS16:303, CTS14:310).

Available from: 2023-08-24 Created: 2023-08-24 Last updated: 2023-09-13
Jansson, M., Ishikawa, F., Chen, W. & Buyanova, I. A. (2022). Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering. ACS Nano, 16(8), 12666-12676
Open this publication in new window or tab >>Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering
2022 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 16, no 8, p. 12666-12676Article in journal (Refereed) Published
Abstract [en]

Energy upconversion via optical processes in semiconductor nanowires (NWs) is attractive for a variety of applications in nano-optoelectronics and nanophotonics. One of the main challenges is to achieve a high upconversion efficiency and, thus, a wide dynamic range of device performance, allowing efficient upconversion even under low excitation power. Here, we demonstrate that the efficiency of energy upconversion via two-photon absorption (TPA) can be drastically enhanced in core/shell NW heterostructures designed to provide a real intermediate TPA step via the band states of the narrow-bandgap region with a long carrier lifetime, fulfilling all the necessary requirements for high-efficiency two-step TPA. We show that, in radial GaAs(P)/GaNAs(P) core/shell NW heterostructures, the upconversion efficiency increases by 500 times as compared with that of the constituent materials, even under an excitation power as low as 100 mW/cm2 that is comparable to the 1 sun illumination. The upconversion efficiency can be further improved by 8 times through engineering the electric-field distribution of the excitation light inside the NWs so that light absorption is maximized within the desired region of the heterostructure. This work demonstrates the effectiveness of our approach in providing efficient photon upconversion by exploring core/shell NW heterostructures, yielding an upconversion efficiency being among the highest reported in semiconductor nanostructures. Furthermore, our work provides design guidelines for enhancing efficiency of energy in NW heterostructures.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2022
Keywords
nanowires; upconversion; solar cells; photonics; heterostructures
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:liu:diva-187344 (URN)10.1021/acsnano.2c04287 (DOI)000834094700001 ()35876227 (PubMedID)
Note

Funding Agencies|Swedish Research Council [2019-04312]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [JA2014-5698]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; KAKENHI from the Japan Society for the Promotion of Science [16H05970, 19H00855, 21KK0068]; Japan Society for the Promotion of Science

Available from: 2022-08-19 Created: 2022-08-19 Last updated: 2023-05-16Bibliographically approved
Xu, K., Ruoko, T.-P., Shokrani, M., Scheunemann, D., Abdalla, H., Sun, H., . . . Fabiano, S. (2022). On the Origin of Seebeck Coefficient Inversion in Highly Doped Conducting Polymers. Advanced Functional Materials, 32(20), Article ID 2112276.
Open this publication in new window or tab >>On the Origin of Seebeck Coefficient Inversion in Highly Doped Conducting Polymers
Show others...
2022 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 32, no 20, article id 2112276Article in journal (Refereed) Published
Abstract [en]

A common way of determining the majority charge carriers of pristine and doped semiconducting polymers is to measure the sign of the Seebeck coefficient. However, a polarity change of the Seebeck coefficient has recently been observed to occur in highly doped polymers. Here, it is shown that the Seebeck coefficient inversion is the result of the density of states filling and opening of a hard Coulomb gap around the Fermi energy at high doping levels. Electrochemical n-doping is used to induce high carrier density (>1 charge/monomer) in the model system poly(benzimidazobenzophenanthroline) (BBL). By combining conductivity and Seebeck coefficient measurements with in situ electron paramagnetic resonance, UV-vis-NIR, Raman spectroelectrochemistry, density functional theory calculations, and kinetic Monte Carlo simulations, the formation of multiply charged species and the opening of a hard Coulomb gap in the density of states, which is responsible for the Seebeck coefficient inversion and drop in electrical conductivity, are uncovered. The findings provide a simple picture that clarifies the roles of energetic disorder and Coulomb interactions in highly doped polymers and have implications for the molecular design of next-generation conjugated polymers.

Place, publisher, year, edition, pages
Wiley-V C H Verlag GMBH, 2022
Keywords
conducting polymers; organic electrochemical transistor; Seebeck coefficient; thermoelectric application
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-182954 (URN)10.1002/adfm.202112276 (DOI)000751371400001 ()
Note

Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [2020-03243]; Olle Engkvists Stiftelse [204-0256]; European CommissionEuropean CommissionEuropean Commission Joint Research Centre [GA-955837, GA-799477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germanys Excellence Strategy via the Excellence Cluster 3D Matter Made to OrderGerman Research Foundation (DFG) [EXC-2082/1-390761711]; Carl Zeiss Foundation; Deutsche ForschungsgemeinschaftGerman Research Foundation (DFG) [FA 1502/1-1]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [52173156]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [ITM17-0316]

Available from: 2022-02-16 Created: 2022-02-16 Last updated: 2023-12-28Bibliographically approved
Zhang, B., Stehr, J. E., Chen, P., Wang, X., Ishikawa, F., Chen, W. & Buyanova, I. A. (2021). Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering. Advanced Functional Materials, 31(36), Article ID 2104671.
Open this publication in new window or tab >>Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering
Show others...
2021 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 31, no 36, article id 2104671Article in journal (Refereed) Published
Abstract [en]

GaAs-based semiconductors are highly attractive for diverse nonlinear photonic applications, owing to their non-centrosymmetric crystal structure and huge nonlinear optical coefficients. Nanostructured semiconductors, for example, nanowires (NWs), offer rich possibilities to tailor nonlinear optical properties and further enhance photonic device performance. In this study, it is demonstrated highly efficient second-harmonic generation in subwavelength wurtzite (WZ) GaAs NWs, reaching 2.5 × 10−5 W−1, which is about seven times higher than their zincblende counterpart. This enhancement is shown to be predominantly caused by an axial built-in electric field induced by spontaneous polarization in the WZ lattice via electric field-induced second-order nonlinear susceptibility and can be controlled optically and potentially electrically. The findings, therefore, provide an effective strategy for enhancing and manipulating the nonlinear optical response in subwavelength NWs by utilizing lattice engineering.

Place, publisher, year, edition, pages
Weinheim, Germany: Wiley-V C H Verlag GMBH, 2021
Keywords
Electrochemistry, Condensed Matter Physics, Biomaterials, Electronic, Optical and Magnetic Materials
National Category
Engineering and Technology Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:liu:diva-179767 (URN)10.1002/adfm.202104671 (DOI)000665102600001 ()
Note

Funding: Swedish Research Council European Commission [2019-04312]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [JA2014-5698]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University [2009 00971]; KAKENHI from Japan Society of Promotion of Science [19H00855, 16H05970]; National Natural Science Foundation of China (NSFC) [12027805, 11991060]

Available from: 2021-10-01 Created: 2021-10-01 Last updated: 2021-11-11Bibliographically approved
Huang, Y., Buyanova, I. A., Phansa, C., Sandoval-Salinas, M. E., Casanova, D., Myers, W. K., . . . Puttisong, Y. (2021). Competition between triplet pair formation and excimer-like recombination controls singlet fission yield. Cell Reports Physical Science, 2(2), Article ID 100339.
Open this publication in new window or tab >>Competition between triplet pair formation and excimer-like recombination controls singlet fission yield
Show others...
2021 (English)In: Cell Reports Physical Science, E-ISSN 2666-3864, Vol. 2, no 2, article id 100339Article in journal (Refereed) Published
Abstract [en]

The ultimate goal for singlet fission is that each photo-excited singlet exciton, S1, will result in two triplet excitons with unity yield. However, the singlet fission is now recognized to be complicated, involving bright/dark excited states of different spin multiplicity. Identifying the role of such states is vital to optimize singlet fission yield but difficult due to their elusive spectral signature. Here, we develop an experimental protocol based on a refined magneto-optical probe to access the fast time evolution of various excited states. In diphenylhexatriene crystal, the S1 is found to undergo two competing processes?to form one of the two dark triplet pair intermediates having different exchange energies or to form a bright state, Sx, exhibiting excimer-like delayed photoluminescence. Our result provides a clear picture of a competition event in singlet fission, which is beneficial for the development and tailoring of singlet fission materials with high yield.

Place, publisher, year, edition, pages
Elsevier, 2021
Keywords
singlet fission; excimers; triplet pair states; trap states
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:liu:diva-173605 (URN)10.1016/j.xcrp.2021.100339 (DOI)000658762100019 ()
Note

Funding agencies: Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR-2017-05285]; Linkoping University; Knut and Alice Wallenberg Foundation (KAW)Knut & Alice Wallenberg Foundation; Royal Thai Government Scholarship under the Development and Promotion of Science and Technology Talents Project (DPST); EPSRCUK Research & Innovation (UKRI)Engineering & Physical Sciences Research Council (EPSRC) [EP/M005143/1, EP/P027741/1, EP/L011972/1]; Spanish Government MINECO/FEDERSpanish Government [PID2019109555GB-l00]; Basque governmentBasque Government [PIBA19-0004]; CONACYT-MexicoConsejo Nacional de Ciencia y Tecnologia (CONACyT) [591700]

Available from: 2021-02-25 Created: 2021-02-25 Last updated: 2022-07-27Bibliographically approved
Stehr, J. E., Balagula, R., Jansson, M., Yukimune, M., Fujiwara, R., Ishikawa, F., . . . Buyanova, I. A. (2020). Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range. Nanotechnology, 31(6), Article ID 065702.
Open this publication in new window or tab >>Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range
Show others...
2020 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 31, no 6, article id 065702Article in journal (Refereed) Published
Abstract [en]

We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at ~1 μm, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect optical quality of the active GaNAs shell and is shown to result from suppressed formation of non-radiative recombination (NRR) centers under the optimum growth temperature. By employing the optically detected magnetic resonance spectroscopy, we identify gallium vacancies and gallium interstitials as being among the dominant NRR defects. The radiative efficiency of the NWs can be further improved by post-growth annealing at 680 °C, which removes the gallium interstitials.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2020
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-161947 (URN)10.1088/1361-6528/ab51cd (DOI)000502786100001 ()31658456 (PubMedID)
Note

Funding agencies:  Swedish Energy AgencySwedish Energy Agency [P40119-1]; Swedish Research CouncilSwedish Research Council [2015-05532]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [JA2014-5698]; Swedish Government Strategic Res

Available from: 2019-11-14 Created: 2019-11-14 Last updated: 2020-01-02Bibliographically approved
Stehr, J. E., Jansson, M., La, R., Tu, C., Chen, W. & Buyanova, I. A. (2020). Gallium vacancies-common non-radiative defects in ternary GaAsP and quaternary GaNAsP nanowires. Nano Express, 1(2), Article ID 020022.
Open this publication in new window or tab >>Gallium vacancies-common non-radiative defects in ternary GaAsP and quaternary GaNAsP nanowires
Show others...
2020 (English)In: Nano Express, ISSN 2632-959X, Vol. 1, no 2, article id 020022Article in journal (Refereed) Published
Abstract [en]

Nanowires (NWs) based on ternary GaAsP and quaternary GaNAsP alloys are considered as very promising materials for optoelectronic applications, including in multi-junction and intermediate band solar cells. The efficiency of such devices is expected to be largely controlled by grown-in defects. In this work we use the optically detected magnetic resonance (ODMR) technique combined with photoluminescence measurements to investigate the origin of point defects in Ga(N)AsP NWs grown by molecular beam epitaxy on Si substrates. We identify gallium vacancies, which act as non-radiative recombination centers, as common defects in ternary and quaternary Ga(N)AsP NWs. Furthermore, we show that the presence of N is not strictly necessary for, but promotes, the formation of gallium vacancies in these NWs.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2020
Keywords
nanowires; GaNAsP; defects; ODMR; photoluminescence
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-168495 (URN)10.1088/2632-959X/aba7f0 (DOI)000657298800001 ()
Note

Funding: Linkoping University; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2019-04312]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

Available from: 2020-08-25 Created: 2020-08-25 Last updated: 2021-06-15Bibliographically approved
Bian, Q., Ma, F., Chen, S., Wei, Q., Su, X., Buyanova, I. A., . . . Inganäs, O. (2020). Vibronic coherence contributes to photocurrent generation in organic semiconductor heterojunction diodes. Nature Communications, 11(1), Article ID 617.
Open this publication in new window or tab >>Vibronic coherence contributes to photocurrent generation in organic semiconductor heterojunction diodes
Show others...
2020 (English)In: Nature Communications, E-ISSN 2041-1723, Vol. 11, no 1, article id 617Article in journal (Refereed) Published
Abstract [en]

Charge separation dynamics after the absorption of a photon is a fundamental process relevant both for photosynthetic reaction centers and artificial solar conversion devices. It has been proposed that quantum coherence plays a role in the formation of charge carriers in organic photovoltaics, but experimental proofs have been lacking. Here we report experimental evidence of coherence in the charge separation process in organic donor/acceptor heterojunctions, in the form of low frequency oscillatory signature in the kinetics of the transient absorption and nonlinear two-dimensional photocurrent spectroscopy. The coherence plays a decisive role in the initial ~200 femtoseconds as we observe distinct experimental signatures of coherent photocurrent generation. This coherent process breaks the energy barrier limitation for charge formation, thus competing with excitation energy transfer. The physics may inspire the design of new photovoltaic materials with high device performance, which explore the quantum effects in the next-generation optoelectronic applications.

Place, publisher, year, edition, pages
Nature Publishing Group, 2020
National Category
Other Physics Topics
Identifiers
urn:nbn:se:liu:diva-164232 (URN)10.1038/s41467-020-14476-w (DOI)000524950500001 ()32001688 (PubMedID)2-s2.0-85078713267 (Scopus ID)
Note

Funding agencies: Knut and Alice Wallenberg Foundation (KAW) through a Wallenberg Scholar grant; Crafoord Foundation; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2014.0041]; China Scholarship Council (CSC)China Scholarship Council [201508320

Available from: 2020-03-10 Created: 2020-03-10 Last updated: 2023-03-28Bibliographically approved
Zhang, B., Huang, Y., Stehr, J. E., Chen, P., Wang, X. J., Lu, W., . . . Buyanova, I. A. (2019). Band structure of wurtzite GaBiAs nanowires. Nano letters (Print), 19, 6454-6460
Open this publication in new window or tab >>Band structure of wurtzite GaBiAs nanowires
Show others...
2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, p. 6454-6460Article in journal (Refereed) Published
Abstract [en]

We report on the first successful growth of wurtzite (WZ) GaBiAs nanowires (NWs) and reveal the effects of Bi incorporation on the electronic band structure by using polarization-resolved optical spectroscopies performed on individual NWs. Experimental evidence of a decrease in the band-gap energy and an upward shift of the topmost three valence subbands upon the incorporation of Bi atoms is provided, whereas the symmetry and ordering of the valence band states remain unchanged, that is, Γ9, Γ7, and Γ7 within the current range of Bi compositions. The extraordinary valence band structure of WZ GaBiAs NWs is explained by anisotropic hybridization and anticrossing between p-like Bi states and the extended valence band states of host WZ GaAs. Moreover, the incorporation of Bi into GaAs is found to significantly reduce the temperature sensitivity of the band-gap energy in WZ GaBiAs NWs. Our work therefore demonstrates that utilizing dilute bismide alloys provides new avenues for band-gap engineering and thus photonic engineering with NWs.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-160735 (URN)10.1021/acs.nanolett.9b02679 (DOI)000486361900080 ()2-s2.0-85072133061 (Scopus ID)
Note

Funding agencies: Linkoping University; Swedish Research CouncilSwedish Research Council [2016-05091]; Swedish Energy AgencySwedish Energy Agency [P40119-1]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [20

Available from: 2019-10-04 Created: 2019-10-04 Last updated: 2019-11-06Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0002-6405-9509

Search in DiVA

Show all publications