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Salomonsson, Anette
Publications (10 of 16) Show all publications
Roy, S., Salomonsson, A., Lloyd-Spets, A., Aulin, C., Käll, P.-O., Ojamäe, L., . . . Sanati, M. (2006). Metal oxide nanoparticles as novel gate materials for field-effect gas sensors. Materials and Manufacturing Processes, 21, 275-278
Open this publication in new window or tab >>Metal oxide nanoparticles as novel gate materials for field-effect gas sensors
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2006 (English)In: Materials and Manufacturing Processes, ISSN 1042-6914, E-ISSN 1532-2475, Vol. 21, p. 275-278Article in journal (Refereed) Published
Abstract [en]

  

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-36200 (URN)10.1080/10426910500464651 (DOI)30525 (Local ID)30525 (Archive number)30525 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13
Salomonsson, A., Petoral Jr., R. M., Uvdal, K., Aulin, C., Käll, P.-O., Ojamäe, L., . . . Lloyd Spetz, A. (2006). Nanocrystalline Ruthenium oxide and Ruthenium in sensing applications -an experimental and theoretical study. Journal of Nanoparticle Research, 8(6), 899-910
Open this publication in new window or tab >>Nanocrystalline Ruthenium oxide and Ruthenium in sensing applications -an experimental and theoretical study
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2006 (English)In: Journal of Nanoparticle Research, ISSN 1388-0764, Vol. 8, no 6, p. 899-910Article in journal (Refereed) Published
Abstract [en]

In this project, we have explored RuO2 and Ru nanoparticles (∼ ∼10 and ∼ ∼5 nm, respectively, estimated from XRD data) to be used as gate material in field effect sensor devices. The particles were synthesized by wet chemical procedure. The capacitance versus voltage characteristics of the studied capacitance shifts to a lower voltage while exposed to reducing gases. The main objectives are to improve the selectivity of the FET sensors by tailoring the dimension and surface chemistry of the nanoparticles and to improve the high temperature stability. The sensors were characterized using capacitance versus voltage measurements, at different frequencies, 500 Hz to 1 MHz, and temperatures at 100–400°C. The sensor response patterns have been found to depend on operating temperature. X-ray photoelectron spectroscopy (XPS) analyses were performed to investigate the oxidation state due to gas exposure. Quantum-chemical computations suggest that heterolytic dissociative adsorption is favored and preliminary computations regarding water formation from adsorbed hydrogen and oxygen was also performed.

Keywords
nanoparticles, gas sensors, RuO2, Ru, FET devices
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-13387 (URN)10.1007/s11051-005-9058-1 (DOI)
Available from: 2005-10-06 Created: 2005-10-06 Last updated: 2015-03-09
Lloyd-Spets, A., Salomonsson, A., Ojamäe, L., Käll, P.-O., Strand, M., Einvall, J. & Aulin, C. (2006). Nanoparticles as sensing material for selective and stable SiC-FET gas sensor. In: Proc. European Aerosol Conference 2005,2006 (pp. 735-735).
Open this publication in new window or tab >>Nanoparticles as sensing material for selective and stable SiC-FET gas sensor
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2006 (English)In: Proc. European Aerosol Conference 2005,2006, 2006, p. 735-735Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-35804 (URN)28608 (Local ID)28608 (Archive number)28608 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-03-09
Lloyd-Spets, A., Nakagomi, S., Wingbrant, H., Andersson, M., Salomonsson, A., Roy, S., . . . Yakimova, R. (2006). New materials for chemical and biosensors. Materials and Manufacturing Processes, 21(3), 253-256
Open this publication in new window or tab >>New materials for chemical and biosensors
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2006 (English)In: Materials and Manufacturing Processes, ISSN 1042-6914, E-ISSN 1532-2475, Vol. 21, no 3, p. 253-256Article in journal (Refereed) Published
Abstract [en]

Wide band gap materials such as SiC, AlN, GaN, ZnO, and diamond have excellent properties such as high operation temperature when used as field effect devices and a high resonating frequency of the substrate materials used in piezoelectric resonator devices. Integration of FET and resonating sensors on the same chip enables powerful miniaturized devices, which can deliver increased information about a gas mixture or complex liquid. Examples of sensor devices based on different wide band gap materials will be given.

Keywords
AlN, Biosensors, Catalytic metals, Chemical sensors, Diamond, FET, GaN, High frequency, High temperature, Resonators, SAW, SiC, Thin film, Wide band gap materials, ZnO
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-50293 (URN)10.1080/10426910500464495 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12
Salomonsson, A., Eriksson, M. & Dannetun, H. (2005). Hydrogen Interaction with Platinum and Palladium Metal Insulator Semiconductor devices. Journal of Applied Physics, 98(1), 14505-14514
Open this publication in new window or tab >>Hydrogen Interaction with Platinum and Palladium Metal Insulator Semiconductor devices
2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 98, no 1, p. 14505-14514Article in journal (Refereed) Published
Abstract [en]

Hydrogen-sensitivePd–SiO2–Si and Pt–SiO2–Si metal–insulator–semiconductor (MIS) devices have been studied inultrahigh vacuum in the temperature range of 223–523  K. Adsorption/absorption ofhydrogen occurs at the metal surface, in the metal bulk,and at the metal–insulator interface. The sensor signal, caused byhydrogen adsorption at the interface, shows a logarithmic dependence onthe applied hydrogen pressure. The Pt-MIS device, which is fullyfunctional at atmospheric pressures, is sensitive to changes in hydrogenpressure down to the 10–12-Torr scale. We propose that theinterface adsorption follows a so-called Temkin isotherm with an interfaceheat of adsorption that varies with hydrogen coverage as Hi0(1–a).The initial heat of adsorption Hi0 is determined to 0.78  eV/hydrogenatom. The adsorption potential at the external Pt surface isfound to be 0.45  eV/hydrogen atom. These values were obtained bymodeling the hydrogen interaction with the MIS devices and fittingthe model to a number of experimental results. Also studiesof Pd-based devices were performed and compared with Pt. Thehydrogen adsorption on the metal surface, previously treated as afirst-order process on Pd, is shown to follow a second-orderprocess. Qualitatively the results from the Pd- and Pt-MIS devicesagree. Quantitatively there are differences. The hydrogen sensitivity of thePt-MIS device is only approximately one-third compared to that ofthe Pd-MIS structure. This agrees with the result that theconcentration of available hydrogen adsorption sites at the Pt–SiO2 interfaceis approximately 7×1017 m–2 whereas the concentrations of sites at thePd–SiO2 interface is roughly three times larger (2×1018 m–2). An estimateof the size of the dipole moments (0.6–0.7  D) implies thatthe interface hydrogen atoms are strongly polarized. Differences are alsoobserved in the microstructure of the metal films. Atomic forcemicroscopy results show that the Pd surface reconstructs during H2–O2exposures, while the Pt surface shows no such change atthese temperatures.

Keywords
palladium, platinum, silicon compounds, silicon, hydrogen, elemental semiconductors, MIS devices, gas sensors, atomic force microscopy, adsorption, surface reconstruction, heat of adsorption, crystal microstructure
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-13383 (URN)10.1063/1.1953866 (DOI)
Available from: 2005-10-06 Created: 2005-10-06 Last updated: 2016-07-08
Salomonsson, A., Eriksson, M. & Dannetun, H. (2005). Hydrogen interaction with Pt- and PdMIS devices. Journal of Applied Physics, 98(1)
Open this publication in new window or tab >>Hydrogen interaction with Pt- and PdMIS devices
2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 98, no 1Article in journal (Refereed) Published
Abstract [en]

Hydrogen-sensitive Pd–SiO2–Si and Pt–SiO2–Si metal–insulator–semiconductor (MIS) devices have been studied in ultrahigh vacuum in the temperature range of 223–523 K. Adsorption/absorption of hydrogen occurs at the metal surface, in the metal bulk, and at the metal–insulator interface. The sensor signal, caused by hydrogen adsorption at the interface, shows a logarithmic dependence on the applied hydrogen pressure. The Pt-MIS device, which is fully functional at atmospheric pressures, is sensitive to changes in hydrogen pressure down to the 10−12-Torr scale. We propose that the interface adsorption follows a so-called Temkin isotherm with an interface heat of adsorption that varies with hydrogen coverage as ΔHi0(1−aθ). The initial heat of adsorption ΔHi0 is determined to 0.78 eV/hydrogen atom. The adsorption potential at the external Pt surface is found to be 0.45 eV/hydrogen atom. These values were obtained by modeling the hydrogen interaction with the MIS devices and fitting the model to a number of experimental results. Also studies of Pd-based devices were performed and compared with Pt. The hydrogen adsorption on the metal surface, previously treated as a first-order process on Pd, is shown to follow a second-order process. Qualitatively the results from the Pd- and Pt-MIS devices agree. Quantitatively there are differences. The hydrogen sensitivity of the Pt-MIS device is only approximately one-third compared to that of the Pd-MIS structure. This agrees with the result that the concentration of available hydrogen adsorption sites at the Pt–SiO2 interface is approximately 7×1017 m−2 whereas the concentrations of sites at the Pd–SiO2 interface is roughly three times larger (2×1018 m−2). An estimate of the size of the dipole moments (0.6–0.7 D) implies that the interface hydrogen atoms are strongly polarized. Differences are also observed in the microstructure of the metal films. Atomic force microscopy results show that the Pd surface reconstructs during H2–O2 exposures, while the Pt surface shows no such change at these temperatures.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-67403 (URN)10.1063/1.1953866 (DOI)
Available from: 2011-04-11 Created: 2011-04-11 Last updated: 2017-12-11
Lutic, D., Strand, M., Salomonsson, A., Ojamäe, L., Käll, P.-O., Lloyd-Spets, A. & Sanati, M. (2005). In2O3 particle films as gate material for MISiC-capacitor sensors. In: NOSA 2005,2005.
Open this publication in new window or tab >>In2O3 particle films as gate material for MISiC-capacitor sensors
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2005 (English)In: NOSA 2005,2005, 2005Conference paper, Published paper (Refereed)
Keywords
gate material, MISiC-capacitor, sensor
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-30829 (URN)16476 (Local ID)16476 (Archive number)16476 (OAI)
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-03-09
Strand, M., Salomonsson, A., Einvall, J., Aulin, C., Ojamäe, L., Käll, P.-O., . . . Sanati, M. (2005). Nanoparticles as sensing material for selective and stable SiC-FET gas sensor. In: European Aerosol Conference 2005,2005 (pp. 735).
Open this publication in new window or tab >>Nanoparticles as sensing material for selective and stable SiC-FET gas sensor
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2005 (English)In: European Aerosol Conference 2005,2005, 2005, p. 735-Conference paper, Published paper (Refereed)
Keywords
nanoparticles, SiC-FET, sensor, sensing material
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-30751 (URN)16367 (Local ID)16367 (Archive number)16367 (OAI)
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-03-09
Salomonsson, A., Roy, S., Aulin, C., Cerdà, J., Käll, P.-O., Ojamäe, L., . . . Lloyd Spetz, A. (2005). Nanoparticles for long-term stable, more selective MISiCFET gas sensors. Sensors and Actuators B, 107(2), 831-838
Open this publication in new window or tab >>Nanoparticles for long-term stable, more selective MISiCFET gas sensors
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2005 (English)In: Sensors and Actuators B, ISSN 0925-4005, Vol. 107, no 2, p. 831-838Article in journal (Refereed) Published
Abstract [en]

Synthesis of metal-oxide nanoparticles and utilization of these particles as gate materials for field-effect sensor devices is reported. Improved selectivity to specific gases is expected by modulating the size of the oxide nanoparticles or impregnating them with catalytic metals. Another objective is to improve the long-term thermal stability of the sensors, since the metal loaded nanoparticles may prevent thermally induced restructuring of the gate layer, which is often a problematic issue for the catalytic metal layers. Because of its reasonably high electrical conductivity, which is especially important for the capacitive gas sensors, ruthenium dioxide has been identified to be one of the potential candidates as gate material for the field-effect sensor devices. Interestingly, this material has been found to change its resistivity in different gaseous ambients. When used as a gate material, sensitivity to reducing gases has been observed for the RuO2/SiO2/4H-SiC capacitors. Changes in the resistivity of the films due to various gas exposures have also been recorded. Morphological studies of nanoparticles (SiO2 and Al2O3), loaded or impregnated with catalytic metals (e.g. Pt), have been performed.

Keywords
Sensors; Catalytic material; MISiCFET; Ruthenium dioxide
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-13385 (URN)10.1016/j.snb.2004.12.024 (DOI)
Available from: 2005-10-06 Created: 2005-10-06 Last updated: 2015-03-09
Salomonsson, A. (2005). New Materials for Gas Sensitive Field-Effect Device Studies. (Doctoral dissertation). Linköping: Linköping University Electronic Press
Open this publication in new window or tab >>New Materials for Gas Sensitive Field-Effect Device Studies
2005 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Gas sensor control is potentially one of the most important techniques of tomorrow for the environment. All over the world cars are preferred for transportation, and accordingly the number of cars increases, unfortunately, together with pollutants. Boilers and powerplants are other sources of pollutants to the environment. Metal-Insulator-Silicon Carbide (MISiC) Field-effect sensors in car applications and boilers have the potential to reduce the amount of pollutants. These devices are sensitive to several gases in exhaust and flues gases, such as hydrogen, hydrocarbons, and ammonia (for the selective catalytic reduction (SCR) application). These applications require specific and long term stable sensors. The car industry for instance wants sensors that will stand at least 240 000 km.

This thesis presents studies of the active layers in MIS Fieldeffect gas sensors. Fundamental studies of the sensor mechanism has been performed in ultra high vacuum, UHV, to understand the gas response mechanism in more detail, and to find out how the sensing mechanism is affected by the catalytic active gate material. The influence of four different insulating layers was studied at atmospheric pressure. The catalytic layer has also been altered to metal oxide nanoparticles with or without impregnation of catalytic metals.

Nanoparticles are potential candidates to be used as the gate material for high temperature, long-term stable FET sensor devices. The combination of catalytic metals and metal oxides may prevent reconstruction of the metal. The use of nanoparticles will increase the number of triple points (catalytic material and insulator in contact with gas), which are crucial e.g. for the ammonia sensitivity. Another challenging aspect of nanoparticles is the possibility to get selectivity to different gases based on the particle size.

The goal is to find new sensitive, selective and more long term stable materials, which meet the requirements above.

From the UHV studies we learned that the two catalytic active metals Pt and Pd, do behave in a similar way, although there are some quantitative differences. Values for the heat of adsorption on both the Pd and Pt surfaces are estimated as well as the dipole moments for the adsorbates on the insulator surface.

The insulators play an important role in the sensing mechanism, since the adsorption of hydrogen atoms (or protons) that are detected by the sensor occur on the insulator surface. By changing the insulator material the saturation response of the sensors is affected. It was shown that Al2O3 gave a higher saturated response to hydrogen in Pt-MIS capacitors at 140°C as compared to Ta2O5, SiO2, and Si3N4.

We have tested wet synthesized ruthenium dioxide and ruthenium nanoparticles, which are electrically conducting and catalytically active sensing material. RuO2 is especially interesting as a high temperature material since it is already oxidized. Both materials show a sensitivity pattern comparable to porous platinum. The temperature dependence of the gas response indicates a higher catalytic activity of the RuO2 as compared to Ru nanoparticles.

Nanoparticles synthesized by aerosol technology provide several advantages like a good adhesion of the particles to the substrate, many possible material combinations and efficient methods for particle separation according to size. The methods to use this technology for sensing materials in MISiC sensors are now under development and some preliminary results are obtained.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2005. p. 64
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 957
Keywords
ruthenium dioxide, nanoparticles, MISiCFET, sensors
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-4243 (URN)91-8529-974-X (ISBN)
Public defence
2005-10-07, Hörsal Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Note
On the day of the public defence of the doctoral thesis, the status of articles I and II was: accepted for publication.Available from: 2005-10-06 Created: 2005-10-06 Last updated: 2015-03-24Bibliographically approved
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