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Åbom, Elisabeth
Publications (2 of 2) Show all publications
Nakagomia, S., Wingqvist, G., Åbom, E., Helmersson, U. & Lloyd-Spets, A. (2005). Hydrogen sensing by NKN thin film with high dielectric constant and ferroelectric property. Sensors and actuators. B, Chemical, 108, 490-495
Open this publication in new window or tab >>Hydrogen sensing by NKN thin film with high dielectric constant and ferroelectric property
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2005 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 108, p. 490-495Article in journal (Refereed) Published
Abstract [en]

Hydrogen sensing properties of sodium potassium niobate NaxKyNbOz (NKN) thin films were studied. The NKN thin films were prepared by reactive rf magnetron sputtering. NKN is a ferroelectric material with high dielectric constant. The polarization increases in hydrogen ambient and decreases in oxygen ambient. The conductivity of the NKN film in hydrogen ambient is higher than in oxygen ambient, and these changes are reversible. The threshold voltage of the current-voltage (I-V) characteristics depends on the hydrogen concentration, and a large response of 3.3V was obtained.

Keywords
NKN thin films, ferroelectric property, hydrogen sensing
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-29455 (URN)10.1016/j.snb.2004.11.025 (DOI)14802 (Local ID)14802 (Archive number)14802 (OAI)
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13
Eriksson, M., Salomonsson, A., Lundström, I., Briand, D. & Åbom, E. (2005). The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors. Journal of Applied Physics, 98(3), 34903-34908
Open this publication in new window or tab >>The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors
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2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 98, no 3, p. 34903-34908Article in journal (Refereed) Published
Abstract [en]

The hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductor (MIS) structure. Therefore an influence of the choice of insulator on the hydrogen response properties is expected. We have investigated this influence by producing MIS capacitors with four different insulators; SiO2, Al2O3, Si3N4, and Ta2O5. The results show that the choice of insulator influences the detection limit, the saturation concentration, and the saturation response. Furthermore, there is a strong correlation between the observed saturation response and the oxygen concentration of the insulator surface, as measured by Auger electron spectroscopy, which indicates that the trapping of hydrogen at the interface occurs at the oxygen atoms of the insulator surface. Finally, if the metal film is porous a catalytic oxidation of the insulator surface appears to be facilitated, which can increase the hydrogen response.

Keywords
silicon compounds, alumina, tantalum compounds, hydrogen, dielectric materials, gas sensors, MIS capacitors, Auger electron spectra, catalysis, oxidation, interface states
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-13384 (URN)10.1063/1.1994941 (DOI)
Available from: 2005-10-06 Created: 2005-10-06 Last updated: 2015-03-24

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