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Hallin, Christer
Publications (10 of 48) Show all publications
ul-Hassan, J., Hallin, C., Bergman, J. P. & Janzén, E. (2006). Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates. In: Materials Science Forum, Vols. 527-529. Paper presented at ICSCRM2005 (pp. 183-186). , 527-529
Open this publication in new window or tab >>Properties of Thick n- and p-type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on off- and on-axis Substrates
2006 (English)In: Materials Science Forum, Vols. 527-529, 2006, Vol. 527-529, p. 183-186Conference paper, Published paper (Refereed)
Abstract [en]

Thick epitaxial layers of 4H-SiC both n- and p-type were grown using horizontal Hot- Wall CVD (HWCVD). No large difference in the carrier lifetime was observed for the layers grown on n- and p-type substrates. The carrier lifetime usually increases with the increasing thickness of the epilayer. To investigate if the growth conditions and material properties are changing during the longer growth time a sample was prepared with uniformly varying epilayer thickness from 20μm on one side to 110μm on other side. Results of optical and electrical measurements, the variation in background impurities and other deep levels are discussed. Furthermore, the properties of thick layers grown on on-axis substrates are presented.

Keywords
Epitaxial growth, Hot-Wall CVD, Thick layers, Carrier Lifetime, Photoluminescence, DLTS
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-17436 (URN)10.4028/www.scientific.net/MSF.527-529 (DOI)
Conference
ICSCRM2005
Available from: 2009-03-24 Created: 2009-03-24 Last updated: 2010-12-07Bibliographically approved
Sumakeris, J., Bergman, P., Das, M., Hallin, C., Hull, B., Janzén, E., . . . Carter, Jr, C. (2006). Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices. In: Mater. Sci. Forum, Vol. 527-529. Paper presented at ICSCRM2005 (pp. 141). Trans Tech Publications
Open this publication in new window or tab >>Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
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2006 (English)In: Mater. Sci. Forum, Vol. 527-529, Trans Tech Publications , 2006, p. 141-Conference paper, Published paper (Refereed)
Abstract [en]

  

Place, publisher, year, edition, pages
Trans Tech Publications, 2006
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-41304 (URN)55460 (Local ID)55460 (Archive number)55460 (OAI)
Conference
ICSCRM2005
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15
Henry, A., ul-Hassan, J., Bergman, P., Hallin, C. & Janzén, E. (2006). Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques. Chemical Vapor Deposition, 12(8-9), 475-482
Open this publication in new window or tab >>Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
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2006 (English)In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 12, no 8-9, p. 475-482Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Weinheim: WILEY-VCH Verlag GmbH & Co, 2006
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-36449 (URN)31386 (Local ID)31386 (Archive number)31386 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13
Danielsson, E., Domeij, M., Lee, H., Zetterling, C., Ostling, M., Schoner, A. & Hallin, C. (2005). A 4H-SiC BJT with an epitaxially regrown extrinsic base layer. Materials Science Forum, 483, 905-908
Open this publication in new window or tab >>A 4H-SiC BJT with an epitaxially regrown extrinsic base layer
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2005 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 483, p. 905-908Article in journal (Refereed) Published
Abstract [en]

4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p(+) regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.

Keywords
bipolar junction transistor, extrinsic base, epitaxial regrowth
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-48234 (URN)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12
Sveinbjornsson, E., Olafsson, H., Gudjonsson, G., Allerstam, F., Nilsson, P., Syväjärvi, M., . . . Jos, R. (2005). High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material. In: Materials Science Forum, Vols. 483-485. Paper presented at ECSCRM2004 (pp. 841-844). , 483
Open this publication in new window or tab >>High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
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2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, p. 841-844Conference paper, Published paper (Refereed)
Abstract [en]

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm(2)/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm(2)/VS. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.

Keywords
MOSFET, field effect mobility, sublimation growth
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-48232 (URN)
Conference
ECSCRM2004
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08
Hallin, C., Kakanakova-Georgieva, A., Persson, P. & Janzén, E. (2005). High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers. In: physica status solidi C, Vol. 2. Paper presented at Int. Workshop Nitride Semiconductors, 2004 (pp. 2109-2112). , 2
Open this publication in new window or tab >>High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers
2005 (English)In: physica status solidi C, Vol. 2, 2005, Vol. 2, p. 2109-2112Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-30729 (URN)16342 (Local ID)16342 (Archive number)16342 (OAI)
Conference
Int. Workshop Nitride Semiconductors, 2004
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2015-03-09
Kakanakova-Georgieva, A., Ivanov, I. G., Hallin, C. & Janzén, E. (2005). Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure. In: Phys. Stat. Sol. (a), Vol. 202. Paper presented at Int. Workshop on Nitride Semiconductors (pp. 739-743). , 202(5)
Open this publication in new window or tab >>Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure
2005 (English)In: Phys. Stat. Sol. (a), Vol. 202, 2005, Vol. 202, no 5, p. 739-743Conference paper, Published paper (Refereed)
Abstract [en]

We report on a new approach to MOCVD growth of GaN, i.e. hot-wall MOCVD, and its application to homoepitaxy on GaN substrates. The quality of the epilayers is examined by photoluminescence (PL). Homoepitaxially hot-wall MOCVD grown GaN layers show (1) intense PL free-exciton emissions relative to the intensity of the principal bound-exciton emission and (2) homogeneous cathodoluminescence emission within the terraces developed during the step-flow growth. Impurity concentrations in the material are measured by secondary ion mass spectrometry (SIMS). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-46120 (URN)10.1002/pssa.200461417 (DOI)
Conference
Int. Workshop on Nitride Semiconductors
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13
Kakanakova-Georgieva, A., Kasic, A., Hallin, C., Monemar, B. & Janzén, E. (2005). Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system. In: Phys. Stat. Sol. (c), Vol. 2. Paper presented at E-MRS Fall Meeting (pp. 960-963). , 2
Open this publication in new window or tab >>Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system
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2005 (English)In: Phys. Stat. Sol. (c), Vol. 2, 2005, Vol. 2, p. 960-963Conference paper, Published paper (Refereed)
Keywords
III-nitrides
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-30781 (URN)16406 (Local ID)16406 (Archive number)16406 (OAI)
Conference
E-MRS Fall Meeting
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2010-12-13
Janzén, E., Bergman, P., Danielsson, Ö., Forsberg, U., Hallin, C., ul-Hassan, J., . . . Wahab, Q. U. (2005). SiC and III-nitride Growth in a Hot-wall CVD Reactor. In: Materials Science Forum, ISSN 0255-5476, volume 483-485. Paper presented at ECSCRM2004 (pp. 61-66). Trans Tech Publications, 483-485
Open this publication in new window or tab >>SiC and III-nitride Growth in a Hot-wall CVD Reactor
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2005 (English)In: Materials Science Forum, ISSN 0255-5476, volume 483-485, Trans Tech Publications , 2005, Vol. 483-485, p. 61-66Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Trans Tech Publications, 2005
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-30739 (URN)16353 (Local ID)16353 (Archive number)16353 (OAI)
Conference
ECSCRM2004
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2016-08-31
Syrkin, A., Dmitriev, V., Soukhoveev, V., Mynbaeva, M., Kakanakov, R., Hallin, C. & Janzén, E. (2004). 4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues. In: Mater. Sci. Forum, Vol. 457-460. Paper presented at ICSCRM2003. Trans Tech Publications Inc.
Open this publication in new window or tab >>4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
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2004 (English)In: Mater. Sci. Forum, Vol. 457-460, Trans Tech Publications Inc. , 2004Conference paper, Published paper (Refereed)
Abstract [en]

   

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-41170 (URN)55292 (Local ID)55292 (Archive number)55292 (OAI)
Conference
ICSCRM2003
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15
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