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2024 (English)In: Physical Review Applied, Vol. 22, no 3, article id 034056Article in journal (Refereed) Published
Abstract [en]
Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultrabright AB photoluminescence lines in 4H-SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have previously been studied and assigned to the carbon–antisite-vacancy (CAV) pair. In this paper, we report on new measurements of the AB lines’ temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB lines only consist of three nonthermally activated lines instead of the previously reported four lines; meanwhile, our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In light of our results, the identification of AB lines and the associated room-temperature emission require further study.
Place, publisher, year, edition, pages
American Physical Society, 2024
Keywords
Condensed Matter, Materials & Applied Physics, Quantum Information, Science & Technology, Atomic, Molecular & Optical
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-208703 (URN)10.1103/PhysRevApplied.22.034056 (DOI)001327430200003 ()2-s2.0-85204991892 (Scopus ID)
Note
Funding agencies:
We acknowledge support from the Knut and Alice Wallenberg Foundation through the WBSQD project (Grant No. 2018.0071). I.G.I. acknowledges support from the Swedish Research Council (Grant No. VR 2016-05362). Support from the Swedish Government Strategic Research Area SeRC and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009 00971) is gratefully acknowledged. V.I. was supported by the National Research, Development, and Innovation Office of Hungary via the Quantum Information National Laboratory of Hungary (Grant No. 2022-2.1.1-NL-2022-00004) and under Grant No. FK 145395. The computations were enabled by resources provided by the National Academic Infrastructure for Supercomputing in Sweden (NAISS) and the Swedish National Infrastructure for Computing (SNIC) at NSC partially funded by the Swedish Research Council through Grant Agreements No. 2022-06725 and No. 2018-05973. We acknowledge the EuroHPC Joint Undertaking for awarding project access to the EuroHPC supercomputer LUMI, hosted by CSC (Finland) and the LUMI consortium through a EuroHPC Regular Access call.
A.G. acknowledges the National Office of Research, Development, and Innovation of Hungary (NKFIH) Grant No. KKP129866 of the National Excellence Program of Quantum-coherent materials project, the support for the Quantum Information National Laboratory from the Ministry of Culture and Innovation of Hungary (NKFIH Grant No. 2022-2.1.1-NL-2022-00004), projects SPINUS (Grant No. 101135699), and the EU Horizon project QuMicro (Grant No. 101046911).
2024-10-212024-10-212025-05-23Bibliographically approved