liu.seSearch for publications in DiVA
Change search
Link to record
Permanent link

Direct link
Ivanov, Ivan GueorguievORCID iD iconorcid.org/0000-0003-1000-0437
Alternative names
Publications (10 of 137) Show all publications
Qu, Y., Jokubavicius, V., Hoang, D. Q., Liu, X., Fahlman, M., Ivanov, I. G., . . . Sun, J. W. (2024). Aging Ni(OH)2 on 3C-SiC Photoanodes to Achieve a High Photovoltage of 1.1 V and Enhanced Stability for Solar Water Splitting in Strongly Alkaline Solutions. ACS Applied Materials and Interfaces, 16(38), 50926-50936
Open this publication in new window or tab >>Aging Ni(OH)2 on 3C-SiC Photoanodes to Achieve a High Photovoltage of 1.1 V and Enhanced Stability for Solar Water Splitting in Strongly Alkaline Solutions
Show others...
2024 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 16, no 38, p. 50926-50936Article in journal (Refereed) Published
Abstract [en]

Photoelectrochemical (PEC) water splitting is a promising approach to directly convert solar energy to renewable and storable hydrogen. However, the very low photovoltage and serious corrosion of semiconductor photoelectrodes in strongly acidic or alkaline electrolytes needed for water splitting severely impede the practical application of this technology. In this work, we demonstrate a facile approach to fabricate a high-photovoltage, stable photoanode by depositing Ni(OH)(2) cocatalyst on cubic silicon carbide (3C-SiC), followed by aging in 1.0 M NaOH at room temperature for 40 h without applying electrochemical bias. The aged 3C-SiC/Ni(OH)(2) photoanode achieves a record-high photovoltage of 1.10 V, an ultralow onset potential of 0.10 V vs the reversible hydrogen electrode, and enhanced stability for PEC water splitting in the strongly alkaline solution (pH = 13.6). This aged photoanode also exhibits excellent in-air stability, demonstrating identical PEC water-splitting performance for more than 400 days. We find that the aged Ni(OH)2 dramatically promotes the hole transport at the photoanode/electrolyte interface, thus significantly enhancing the photovoltage and overall PEC performance. Furthermore, the oxygen evolution reaction (OER) activity and the phase transitions of the Ni(OH)(2) electrocatalyst before and after aging are systematically investigated. We find that the aging process is critical for the formation of the relatively stable and highly active Fe-doped beta-NiOOH, which accounts for the enhanced OER activity and stability of the PEC water splitting. This work provides a simple and effective approach to fabricate high-photovoltage and stable photoanodes, bringing new premise toward solar fuel development.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC, 2024
Keywords
cubic silicon carbide(3C-SiC); solar water splitting; solar-to-hydrogenconversion; photovoltage; aging of Ni(OH)(2)
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-207924 (URN)10.1021/acsami.4c11809 (DOI)001314970600001 ()39285735 (PubMedID)
Note

Funding Agencies|Swedish Research Council (Vetenskapsradet) [2018-04670, 2020-04400]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [CH2016-6722]; Olle Engkvists Stiftelse [220-0222, 221-0259]; Carl Tryggers Stiftelse [CTS22-2190, CTS2018-183]; Knut and Alice Wallenberg Foundation [KAW 2018- 0071]

Available from: 2024-10-01 Created: 2024-10-01 Last updated: 2024-11-19Bibliographically approved
Bulancea-Lindvall, O., Davidsson, J., Ivanov, I. G., Gali, A., Ivády, V., Armiento, R. & Abrikosov, I. A. (2024). Temperature dependence of the AB lines and optical properties of the carbon--antisite-vacancy pair in 4H-SiC. Physical Review Applied, 22(3), Article ID 034056.
Open this publication in new window or tab >>Temperature dependence of the AB lines and optical properties of the carbon--antisite-vacancy pair in 4H-SiC
Show others...
2024 (English)In: Physical Review Applied, Vol. 22, no 3, article id 034056Article in journal (Refereed) Published
Abstract [en]

Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultrabright AB photoluminescence lines in 4⁢H-Si⁢C are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have previously been studied and assigned to the carbon–antisite-vacancy (CAV) pair. In this paper, we report on new measurements of the AB lines’ temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB lines only consist of three nonthermally activated lines instead of the previously reported four lines; meanwhile, our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In light of our results, the identification of AB lines and the associated room-temperature emission require further study.

Place, publisher, year, edition, pages
American Physical Society, 2024
Keywords
Condensed Matter, Materials & Applied Physics, Quantum Information, Science & Technology, Atomic, Molecular & Optical
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-208703 (URN)10.1103/PhysRevApplied.22.034056 (DOI)001327430200003 ()2-s2.0-85204991892 (Scopus ID)
Note

Funding agencies:

We acknowledge support from the Knut and Alice Wallenberg Foundation through the WBSQD project (Grant No. 2018.0071). I.G.I. acknowledges support from the Swedish Research Council (Grant No. VR 2016-05362). Support from the Swedish Government Strategic Research Area SeRC and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009 00971) is gratefully acknowledged. V.I. was supported by the National Research, Development, and Innovation Office of Hungary via the Quantum Information National Laboratory of Hungary (Grant No. 2022-2.1.1-NL-2022-00004) and under Grant No. FK 145395. The computations were enabled by resources provided by the National Academic Infrastructure for Supercomputing in Sweden (NAISS) and the Swedish National Infrastructure for Computing (SNIC) at NSC partially funded by the Swedish Research Council through Grant Agreements No. 2022-06725 and No. 2018-05973. We acknowledge the EuroHPC Joint Undertaking for awarding project access to the EuroHPC supercomputer LUMI, hosted by CSC (Finland) and the LUMI consortium through a EuroHPC Regular Access call.

A.G. acknowledges the National Office of Research, Development, and Innovation of Hungary (NKFIH) Grant No. KKP129866 of the National Excellence Program of Quantum-coherent materials project, the support for the Quantum Information National Laboratory from the Ministry of Culture and Innovation of Hungary (NKFIH Grant No. 2022-2.1.1-NL-2022-00004), projects SPINUS (Grant No. 101135699), and the EU Horizon project QuMicro (Grant No. 101046911).

Available from: 2024-10-21 Created: 2024-10-21 Last updated: 2025-05-23Bibliographically approved
Davidsson, J., Babar, R., Shafizadeh, D., Ivanov, I. G., Ivády, V., Armiento, R. & Abrikosov, I. A. (2022). Exhaustive characterization of modified Si vacancies in 4H-SiC. Nanophotonics, 11(20), 4565-4580
Open this publication in new window or tab >>Exhaustive characterization of modified Si vacancies in 4H-SiC
Show others...
2022 (English)In: Nanophotonics, ISSN 2192-8606, Vol. 11, no 20, p. 4565-4580Article in journal (Refereed) Published
Abstract [en]

The negatively charged silicon vacancy (V-Si(-)) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by automatic defect analysis and qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon anti-site (C-Si) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of V-Si(-) + C-Si; up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications.

Place, publisher, year, edition, pages
Walter de Gruyter, 2022
Keywords
high-throughput; photoluminescence; point defects; SiC; silicon vacancy
National Category
Other Physics Topics
Identifiers
urn:nbn:se:liu:diva-188417 (URN)10.1515/nanoph-2022-0400 (DOI)000849179700001 ()
Note

Funding Agencies|Knut and Alice Wallenberg Foundation through WBSQD2 project [2018.0071]; Swedish Government Strategic Research Area Swedish e-science Research Centre (SeRC); Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Covid-19 SeRC transition grant; Swedish Research Council (VR) [2020-05402]; Swedish National Infrastructure for Computing (SNIC); Swedish Research Council [2018-05973]

Available from: 2022-09-14 Created: 2022-09-14 Last updated: 2024-01-10Bibliographically approved
Gilardoni, C. M., Bosma, T., van Hien, D., Hendriks, F., Magnusson, B., Ellison, A., . . . van der Wal, C. H. (2020). Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC. New Journal of Physics, 22(10), Article ID 103051.
Open this publication in new window or tab >>Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Show others...
2020 (English)In: New Journal of Physics, E-ISSN 1367-2630, Vol. 22, no 10, article id 103051Article in journal (Refereed) Published
Abstract [en]

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime T-1 of 2.4 s at 2 K.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD, 2020
Keywords
semiconductor defects; quantum information; defect symmetries; spin– lattice interaction
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-171490 (URN)10.1088/1367-2630/abbf23 (DOI)000583987900001 ()
Note

Funding Agencies|Zernike Institute BIS program; EU H2020 project QuanTELCO [862721]; Swedish Research CouncilSwedish Research Council [VR 2016-04068, VR 2016-05362]; Knut and AliceWallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]; Carl Tryggers Stiftelse for Vetenskaplig Forskning [CTS 15:339]

Available from: 2020-11-19 Created: 2020-11-19 Last updated: 2024-01-17Bibliographically approved
Shi, Y., Jokubavicius, V., Höjer, P., Ivanov, I. G., Yazdi, G., Yakimova, R., . . . Sun, J. W. (2019). A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates. Journal of Physics D: Applied Physics, 52(34)
Open this publication in new window or tab >>A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
Show others...
2019 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 52, no 34Article in journal (Refereed) Published
Abstract [en]

We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that the high-quality bulk-like C-face 3C-SiC with thickness of ~1 mm can be grown over a large single domain without double positioning boundaries (DPBs), which are known to have a strongly negative impact on the electronic properties of the material. Moreover, the C-face sample exhibits a smoother surface with one unit cell height steps while the surface of the Si-face sample exhibits steps twice as high as on the C-face due to step-bunching. High-resolution XRD and low temperature photoluminescence measurements show that C-face 3C-SiC can reach the same high crystalline quality as the Si-face 3C-SiC. Furthermore, cross-section studies of the C- and Si-face 3C-SiC demonstrate that in both cases an initial homoepitaxial 4H-SiC layer followed by a polytype transition layer are formed prior to the formation and lateral expansion of 3C-SiC layer. However, the transition layer in the C-face sample is extending along the step-flow direction less than that on the Si-face sample, giving rise to a more fairly consistent crystalline quality 3C-SiC epilayer over the whole sample compared to the Si-face 3C-SiC where more defects appeared on the surface at the edge. This facilitates the lateral enlargement of 3C-SiC growth on hexagonal SiC substrates.

Place, publisher, year, edition, pages
Biopress Ltd, 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-159101 (URN)10.1088/1361-6463/ab2859 (DOI)000475964100002 ()
Note

Funding agencies:  Swedish Research Council (Vetenskapsradet) [621-2014-5461, 2018-04670, 2016-05362, 621-2014-5825]; Swedish Research Council for Environment, Agricultural Sciences and Spatial Planning (FORMAS) [2016-00559]; Swedish Foundation for International Cooperation

Available from: 2019-07-24 Created: 2019-07-24 Last updated: 2021-12-29
Deminskyi, P., Rouf, P., Ivanov, I. G. & Pedersen, H. (2019). Atomic layer deposition of InN using trimethylindium and ammonia plasma. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 37(2), Article ID 020926.
Open this publication in new window or tab >>Atomic layer deposition of InN using trimethylindium and ammonia plasma
2019 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, no 2, article id 020926Article in journal (Refereed) Published
Abstract [en]

Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, the authors hypothesize that a time-resolved, surface-controlled CVD route could offer a way forward for InN thin film deposition. In this work, the authors report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si(100). They found a narrow atomic layer deposition window of 240-260 degrees C with a deposition rate of 0.36 A/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray diffraction measurements further confirmed the polycrystalline nature of InN thin films. X-ray photoelectron spectroscopy measurements show nearly stoichiometric InN with low carbon level (amp;lt;1 at. %) and oxygen level (amp;lt;5 at. %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH3 plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge. Published by the AVS.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2019
National Category
Inorganic Chemistry
Identifiers
urn:nbn:se:liu:diva-155541 (URN)10.1116/1.5079279 (DOI)000460437200030 ()
Note

Funding Agencies|Swedish Foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg foundation through the project "Bridging the THz gap" [KAW 2013.0049]; VR [VR 2016-05362]; Carl Trygger Foundation

Available from: 2019-03-26 Created: 2019-03-26 Last updated: 2021-12-29
Nguyen, S. T., Stenberg, P., Jokubavicius, V., Ohshima, T., Ul-Hassan, J. & Ivanov, I. G. (2019). Ligand hyperfine interactions at silicon vacancies in 4H-SiC. Journal of Physics: Condensed Matter, 31(19), Article ID 195501.
Open this publication in new window or tab >>Ligand hyperfine interactions at silicon vacancies in 4H-SiC
Show others...
2019 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 31, no 19, article id 195501Article in journal (Refereed) Published
Abstract [en]

The negative silicon vacancy (V-Si(-)) in SiC has recently emerged as a promising defect for quantum communication and room-temperature quantum sensing. However, its electronic structure is still not well characterized. While the isolated Si vacancy is expected to give rise to only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H-SiC, there have been five electron paramagnetic resonance (EPR) centers assigned to V-Si(-) in the past: the so-called isolated no-zero-field splitting (ZFS) V-Si(-) center and another four axial configurations with small ZFS: T-V1a, T-V2a, T-V1b, and T-V2b. Due to overlapping with Si-29 hyperfine (hf) structures in EPR spectra of natural 4H-SiC, hf parameters of T-V1a have not been determined. Using isotopically enriched 4H-(SiC)-Si-28, we overcome the problems of signal overlapping and observe hf parameters of nearest C neighbors for all three components of the S = 3/2 T-V1a and T-V2a centers. The obtained EPR data support the conclusion that only T-V1a and T-V2a are related to V-Si(-) and the two configurations of the so-called isolated no-ZFS V-Si(-) center, V-Si(-) (I) and V-Si(-) (II), are actually the central lines corresponding to the transition I-1/2 amp;lt;-amp;gt; I + 1/2 of the T-V2a and T-V1a centers, respectively.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD, 2019
Keywords
silicon vacancy; hyperfine interaction; electron paramagnetic resonance
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-155906 (URN)10.1088/1361-648X/ab072b (DOI)000461213400001 ()30763923 (PubMedID)
Note

Funding Agencies|Swedish Research Council [VR 2016-04068, VR 2016-05362]; Carl Trygger Stiftelse for Vetenskaplig Forskning [CTS 15:339]; Swedish Energy Agency [43611-1]; JSPS KAKENHI [A 17H01056]

Available from: 2019-04-02 Created: 2019-04-02 Last updated: 2019-10-25
Shi, Y., Zakharov, A. A., Ivanov, I. G., Yazdi, G. R., Jokubavicius, V., Syväjärvi, M., . . . Sun, J. (2018). Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3CSiC (111). Carbon, 140, 533-542
Open this publication in new window or tab >>Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3CSiC (111)
Show others...
2018 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 140, p. 533-542Article in journal (Refereed) Published
Abstract [en]

Multilayer graphene has exhibited distinct electronic properties such as the tunable bandgap for optoelectronic applications. Among all graphene growth techniques, thermal decomposition of SiC is regarded as a promising method for production of device-quality graphene. However, it is still very challenging to grow uniform graphene over a large-area, especially multilayer graphene. One of the main obstacles is the occurrence of step bunching on the SiC surface, which significantly influences the formation process and the uniformity of the multilayer graphene. In this work, we have systematically studied the growth of monolayer and multilayer graphene on off-axis 3CSiC(111). Taking advantage of the synergistic effect of periodic SiC step edges as graphene nucleation sites and the unique thermal decomposition energy of 3CSiC steps, we demonstrate that the step bunching can be fully eliminated during graphene growth and large-area monolayer, bilayer, and four-layer graphene can be controllably obtained on high-quality off-axis 3CSiC(111) surface. The low energy electron microscopy results demonstrate that a uniform four-layer graphene has been grown over areas of tens of square micrometers, which opens the possibility to tune the bandgap for optoelectronic devices. Furthermore, a model for graphene growth along with the step bunching elimination is proposed.

Place, publisher, year, edition, pages
Elsevier, 2018
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-151054 (URN)10.1016/j.carbon.2018.08.042 (DOI)000450120200057 ()
Note

Funding agencies: Swedish Research Council (Vetenskapsradet) [621-2014-5461, 621-2014-5825]; Swedish Research Council for Environment, Agricultural Sciences and Spatial Planning (FORMAS) [2016-00559]; Swedish Foundation for International Cooperation in Research and Higher 

Available from: 2018-09-12 Created: 2018-09-12 Last updated: 2021-12-29
Rodner, M., Puglisi, D., Helmersson, U., Ivanov, I. G., Yakimova, R., Uvdal, K., . . . Eriksson, J. (2018). Iron oxide nanoparticle decorated graphene for ultra-sensitive detection of volatile organic compounds. In: Proceedings of EUROSENSORS 2018: . Paper presented at EUROSENSORS 2018. MDPI, 2(13), Article ID 985.
Open this publication in new window or tab >>Iron oxide nanoparticle decorated graphene for ultra-sensitive detection of volatile organic compounds
Show others...
2018 (English)In: Proceedings of EUROSENSORS 2018, MDPI, 2018, Vol. 2, no 13, article id 985Conference paper, Published paper (Refereed)
Abstract [en]

It has been found that two-dimensional materials, such as graphene, can be used as remarkable gas detection platforms as even minimal chemical interactions can lead to distinct changes in electrical conductivity. In this work, epitaxially grown graphene was decorated with iron oxide nanoparticles for sensor performance tuning. This hybrid surface was used as a sensing layer to detect formaldehyde and benzene at concentrations of relevance in air quality monitoring (low parts per billion). Moreover, the time constants could be drastically reduced using a derivative sensor signal readout, allowing detection at the sampling rates desired for air quality monitoring applications.

Place, publisher, year, edition, pages
MDPI, 2018
Keywords
epitaxial graphene; metal oxide nanoparticle; gas sensor; volatile organic compounds; benzene; formaldehyde; derivative sensor signal
National Category
Physical Chemistry
Identifiers
urn:nbn:se:liu:diva-162242 (URN)10.3390/proceedings2130985 (DOI)
Conference
EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2024-08-23Bibliographically approved
Shtepliuk, I. I., Vagin, M., Ivanov, I. G., Iakimov, T., Yazdi, G. & Yakimova, R. (2018). Lead (Pb) interfacing with epitaxial graphene. Physical Chemistry, Chemical Physics - PCCP, 20(25), 17105-17116
Open this publication in new window or tab >>Lead (Pb) interfacing with epitaxial graphene
Show others...
2018 (English)In: Physical Chemistry, Chemical Physics - PCCP, ISSN 1463-9076, E-ISSN 1463-9084, Vol. 20, no 25, p. 17105-17116Article in journal (Refereed) Published
Abstract [en]

Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene fabricated on silicon carbide (Gr/SiC). The kinetics of electrodeposition and morphological characteristics of the deposits were evaluated by complementary electrochemical, physical and computational methods. The use of Gr/SiC as an electrode allowed the tracking of lead-associated redox conversions. The analysis of current transients passed during the deposition revealed an instantaneous nucleation mechanism controlled by convergent mass transport on the nuclei locally randomly distributed on epitaxial graphene. This key observation of the deposit topology was confirmed by low values of the experimentally-estimated apparent diffusion coefficient, Raman spectroscopy and scanning electron microscopy (SEM) studies. First principles calculations showed that the nucleation of Pb clusters on the graphene surface leads to weakening of the interaction strength of the metal-graphene complex, and only spatially separated Pb adatoms adsorbed on bridge and/or edge-plane sites can affect the vibrational properties of graphene. We expect that the lead adatoms can merge in large metallic clusters only at defect sites that reinforce the metal-graphene interactions. Our findings provide valuable insights into both heavy metal ion electrochemical analysis and metal electroplating on graphene interfaces that are important for designing effective detectors of toxic heavy metals.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2018
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-149854 (URN)10.1039/c8cp01814f (DOI)000436571800024 ()29896595 (PubMedID)
Note

Funding Agencies|VR grant [621-2014-5805]; SSF [SSF GMT14-0077, SSF RMA15-0024]; Angpanneforeningens Forskningsstiftelse [16-541]

Available from: 2018-08-02 Created: 2018-08-02 Last updated: 2018-08-20
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0003-1000-0437

Search in DiVA

Show all publications