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2005 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 20, no 5, p. 353-356Article in journal (Refereed) Published
Abstract [en]
Temperature-dependent photoluminescence (PL), PL excitation and time-resolved PL measurements were employed to study the effects of rapid thermal annealing (RTA) on optical properties of GaNxP1−x alloys grown by solid source molecular beam epitaxy. A substantial increase in radiative efficiency of GaNP epilayers, which is especially pronounced for the high-energy PL component, was achieved after RTA and is attributed to annealing out of competing non-radiative centres. The latter is evident from reduced quenching of the PL intensity with increasing measurement temperature, which results in a strong increase (up to 18 times) in the PL intensity at room temperature (RT), as well as from a substantial increase in carrier lifetime at RT deduced from time-resolved PL measurements.
National Category
Natural Sciences Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-30725 (URN)10.1088/0268-1242/20/5/005 (DOI)16338 (Local ID)16338 (Archive number)16338 (OAI)
2009-10-092009-10-092017-12-13