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Palisaitis, JustinasORCID iD iconorcid.org/0000-0003-3203-7935
Alternative names
Publications (10 of 49) Show all publications
Adam, R. E., Chalangar, E., Pirhashemi, M., Pozina, G., Liu, X., Palisaitis, J., . . . Nur, O. (2019). Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activities. RSC Advances, 9(52), 30585-30598
Open this publication in new window or tab >>Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activities
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2019 (English)In: RSC Advances, ISSN 2046-2069, E-ISSN 2046-2069, Vol. 9, no 52, p. 30585-30598Article in journal (Refereed) Published
Abstract [en]

High-efficiency photocatalysts are crucial for the removal of organic pollutants and environmental sustainability. In the present work, we report on a new low-temperature hydrothermal chemical method, assisted by ultrasonication, to synthesize disruptive plasmonic ZnO/graphene/Ag/AgI nanocomposites for solar-driven photocatalysis. The plasmonic nanocomposites were investigated by a wide range of characterization techniques, confirming successful formation of photocatalysts with excellent degradation efficiency. Using Congo red as a model dye molecule, our experimental results demonstrated a photocatalytic reactivity exceeding 90% efficiency after one hour simulated solar irradiation. The significantly enhanced degradation efficiency is attributed to improved electronic properties of the nanocomposites by hybridization of the graphene and to the addition of Ag/AgI which generates a strong surface plasmon resonance effect in the metallic silver further improving the photocatalytic activity and stability under solar irradiation. Scavenger experiments suggest that superoxide and hydroxyl radicals are responsible for the photodegradation of Congo red. Our findings are important for the fundamental understanding of the photocatalytic mechanism of ZnO/graphene/Ag/AgI nanocomposites and can lead to further development of novel efficient photocatalyst materials.

Place, publisher, year, edition, pages
Royal Meteorological Society, 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-160568 (URN)10.1039/C9RA06273D (DOI)
Available from: 2019-09-30 Created: 2019-09-30 Last updated: 2019-10-07Bibliographically approved
Junaid, M., Hsiao, C.-L., Chen, Y.-T., Lu, J., Palisaitis, J., Persson, P. O., . . . Birch, J. (2018). Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy. Nanomaterials, 8(4), Article ID 223.
Open this publication in new window or tab >>Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
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2018 (English)In: Nanomaterials, ISSN 2079-4991, Vol. 8, no 4, article id 223Article in journal (Other academic) Published
Abstract [en]

GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N2 working gas with a small amount of Ar (0.5 mTorr), we observed an increase in the nanorod aspect ratio from 8 to ~35, a decrease in the average diameter from 74 to 35 nm, and a two-fold increase in nanorod density. With further dilution (Ar = 2.5 mTorr), the aspect ratio decreased to 14, while the diameter increased to 60 nm and the nanorod density increased to a maximum of 2.4 × 109 cm−2. Yet, lower N2 partial pressures eventually led to the growth of continuous GaN films. The observed morphological dependence on N2 partial pressure is explained by a change from N-rich to Ga-rich growth conditions, combined with reduced GaN-poisoning of the Ga-target as the N2 gas pressure is reduced. Nanorods grown at 2.5 mTorr N2 partial pressure exhibited a high intensity 4 K photoluminescence neutral donor bound exciton transitions (D0XA) peak at ~3.479 eV with a full-width-at-half-maximum of 1.7 meV. High-resolution transmission electron microscopy corroborated the excellent crystalline quality of the nanorods.

Place, publisher, year, edition, pages
Basel, Switzerland: MDPI, 2018
Keywords
GaN, nanorods, X-ray diffraction, TEM, photoluminescence, magnetron sputter epitaxy, sputtering
National Category
Condensed Matter Physics Nano Technology
Identifiers
urn:nbn:se:liu:diva-84654 (URN)10.3390/nano8040223 (DOI)000434889100044 ()
Note

Funding agencies: Swedish Research Council (VR) [621-2013-5360, 621-2012-4420, 2016-04412]; Swedish Government Strategic Research Area Grant in Materials Science AFM-SFO MatLiU [2009-00971]; Knut and Alice Wallenberg Foundation

Available from: 2018-04-09 Created: 2012-10-16 Last updated: 2018-06-28Bibliographically approved
Palisaitis, J., Persson, I., Halim, J., Rosén, J. & Persson, P. O. Å. (2018). On the Structural Stability of MXene and the Role of Transition Metal Adatoms. Nanoscale, 10(23), 10850-10855
Open this publication in new window or tab >>On the Structural Stability of MXene and the Role of Transition Metal Adatoms
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2018 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 10, no 23, p. 10850-10855Article in journal (Refereed) Published
Abstract [en]

In the present communication, the atomic structure and coordination of surface adsorbed species on Nb2C MXene is investigated over time. In particular, the influence of the Nb adatoms on the structural stability and oxidation behavior of the MXene is addressed. This investigation is based on plan-view geometry observations of single Nb2C MXene sheets by a combination of atomic-resolution scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS) and STEM image simulations.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2018
Keywords
2D material; MXene; Scanning Transmission Electron Microscopy; Structural Stability; Adatoms
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-148143 (URN)10.1039/C8NR01986J (DOI)000435358600004 ()29870038 (PubMedID)
Note

Funding agencies:The authors acknowledge the Swedish Research Council for funding under grants no. 2016- 04412 and 642-2013-8020, the Knut and Alice Wallenberg’s Foundation for support of the electron microscopy laboratory in Linköping, a Fellowship grant and a project grant (KAW 2015.0043). The authors also acknowledge Swedish Foundation for Strategic Research (SSF) through the Research Infrastructure Fellow program no. RIF 14-0074. The authors finally acknowledge support from the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No 2009 00971

Available from: 2018-05-31 Created: 2018-05-31 Last updated: 2019-06-28Bibliographically approved
Serban, E. A., Palisaitis, J., Persson, P. O., Hultman, L., Birch, J. & Hsiao, C.-L. (2018). Site-controlled growth of GaN nanorod arrays by magnetron sputter epitaxy. Thin Solid Films, 660, 950-955
Open this publication in new window or tab >>Site-controlled growth of GaN nanorod arrays by magnetron sputter epitaxy
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2018 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 660, p. 950-955Article in journal (Refereed) Published
Abstract [en]

Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. Two nanolithographic methods, nanosphere lithography (NSL) and focused ion beam lithography (FIBL), were applied to pattern Si substrates with TiNx masks. The growth temperature was optimized for achieving selectivity and well-faceted nanorods grown onto the NSL-patterned substrates. With increasing temperature from 875 to 985 °C, we observe different growth behaviors and associate them with selective insensitive, diffusion-dominated, and desorption-dominated zones. To further achieve site-specific and diameter control, these growth parameters were transferred onto FIBL-patterned substrates. Further investigation into the FIBL process through tailoring of milling current and time in combination with varying nanorod growth temperature, suggests that minimization of mask and substrate damage is the key to attain uniform, well-defined, single, and straight nanorods. Destruction of the mask results in selective area growth failure, while damage of the substrate surface promotes inclined nanorods grown into the openings, owning to random oriented nucleation.

Place, publisher, year, edition, pages
Elsevier, 2018
Keywords
Gallium nitride, Magnetron sputter epitaxy, Selective-area growth, Nanorods, Lithography, Focused ion beam, Nanosphere
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-147648 (URN)10.1016/j.tsf.2018.01.050 (DOI)000441177500138 ()2-s2.0-85041572645 (Scopus ID)
Note

Funding agencies: Swedish Research Council (VR) [621-2012-4420, 621-2013-5360, 2016-04412]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program; Swedish Foundation for Strategic Research (SSF) [RIF 14-0074]; Sw

Available from: 2018-05-03 Created: 2018-05-03 Last updated: 2018-09-03Bibliographically approved
Halim, J., Palisaitis, J., Lu, J., Thörnberg, J., E. J., M., M., P., . . . Rosén, J. (2018). Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase. ACS Applied Nano Materials, 1(6), 2455-2460
Open this publication in new window or tab >>Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase
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2018 (English)In: ACS Applied Nano Materials, ISSN 2574-0970, Vol. 1, no 6, p. 2455-2460Article in journal (Refereed) Published
Abstract [en]

Introducing point defects in two-dimensional (2D) materials can alter or enhance their properties. Here, we demonstrate how etching a laminated (Nb2/3Sc1/3)2AlC MAX phase (solid solution) of both the Sc and Al atoms results in a 2D Nb1.33C material (MXene) with a large number of vacancies and vacancy clusters. This method is applicable to any quaternary, or higher, MAX phase, wherein one of the transition metals is more reactive than the other and could be of vital importance in applications such as catalysis and energy storage. We also report, for the first time, on the existence of solid solution (Nb2/3Sc1/3)3AlC2 and (Nb2/3Sc1/3)4AlC3 phases.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2018
Keywords
2D material; electronic properties; MXene; synthesis; transition-metal carbide
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-151667 (URN)10.1021/acsanm.8b00332 (DOI)
Available from: 2018-09-28 Created: 2018-09-28 Last updated: 2019-06-28Bibliographically approved
Serban, A., Palisaitis, J., Junaid, M., Tengdelius, L., Högberg, H., Hultman, L., . . . Hsiao, C.-L. (2017). Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates. Energies, 10(9), Article ID 1322.
Open this publication in new window or tab >>Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
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2017 (English)In: Energies, ISSN 1996-1073, E-ISSN 1996-1073, Vol. 10, no 9, article id 1322Article in journal (Refereed) Published
Abstract [en]

We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB2/Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.

Place, publisher, year, edition, pages
Basel, Switzerland: MDPI AG, 2017
Keywords
GaN, nanorods, Si, SiC, Ti, Mo, TiN and ZrB2 templates, magnetron sputtering, epitaxy
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-141597 (URN)10.3390/en10091322 (DOI)000411225200078 ()2-s2.0-85029362447 (Scopus ID)
Note

Funding agencies: Swedish Research Council (VR) [621-2012-4420, 621-2013-5360, 2016-04412]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program; Swedish Foundation for Strategic Research (SSF) through the Resea

Available from: 2017-10-02 Created: 2017-10-02 Last updated: 2018-05-03Bibliographically approved
Tholander, C., Birch, J., Tasnádi, F., Hultman, L., Palisaitis, J., Persson, P. O., . . . Zukauskaitè, A. (2016). Ab initio calculations and experimental study of piezoelectric YxIn1-xN thin films deposited using reactive magnetron sputter epitaxy. Acta Materialia, 105, 199-206
Open this publication in new window or tab >>Ab initio calculations and experimental study of piezoelectric YxIn1-xN thin films deposited using reactive magnetron sputter epitaxy
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2016 (English)In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 105, p. 199-206Article in journal (Refereed) Published
Abstract [en]

By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (YxIn1-xN). Ab initio calculations show that the YxIn1-xN wurtzite phase is lowest in energy among relevant alloy structures for 0≤x≤0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x=0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AlN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown YxIn1-xN films. The piezoelectric response in films with x=0.09 and x=0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict YxIn1−xN to have comparable piezoelectric properties to ScxAl1-xN.

Place, publisher, year, edition, pages
Elsevier, 2016
Keywords
YInN, Thin films, Sputter deposition, Piezoelectricity, Ab initio calculations
National Category
Condensed Matter Physics Materials Chemistry Inorganic Chemistry Other Materials Engineering Manufacturing, Surface and Joining Technology
Identifiers
urn:nbn:se:liu:diva-125918 (URN)10.1016/j.actamat.2015.11.050 (DOI)000370086500023 ()
Available from: 2016-03-08 Created: 2016-03-08 Last updated: 2017-11-30Bibliographically approved
Moubah, R., Magnus, F., Warnatz, T., Palsson, G. K., Kapaklis, V., Devishvili, A., . . . Hjörvarsson, B. (2016). Discrete Layer-by-Layer Magnetic Switching in Fe/MgO(001) Superlattices. Physical Review Applied, 5(044011)
Open this publication in new window or tab >>Discrete Layer-by-Layer Magnetic Switching in Fe/MgO(001) Superlattices
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2016 (English)In: Physical Review Applied, ISSN 2331-7019, Vol. 5, no 044011Article in journal (Refereed) Published
Abstract [en]

We report on a discrete layer-by-layer magnetic switching in Fe=MgO superlattices driven by anantiferromagnetic interlayer exchange coupling. The strong interlayer coupling is mediated by tunnelingthrough MgO layers with thicknesses up to at least 1.8 nm, and the coupling strength varies with MgOthickness. Furthermore, the competition between the interlayer coupling and magnetocrystalline anisotropystabilizes both 90° and 180° periodic alignment of adjacent layers throughout the entire superlattice. Thetunable layer-by-layer switching, coupled with the giant tunneling magnetoresistance of Fe=MgO=Fejunctions, is an appealing combination for three-dimensional spintronic memories and logic devices.

Place, publisher, year, edition, pages
American physical society, 2016
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-128109 (URN)10.1103/PhysRevApplied.5.044011 (DOI)000374562100001 ()
Note

Funding agencies: Swedish research council (VR); Knut and Alice Wallenberg Foundation (KAW)

Available from: 2016-05-17 Created: 2016-05-17 Last updated: 2016-06-10
Ramasamy, M., Baumann, S., Palisaitis, J., Schulze-Kuppers, F., Balaguer, M., Kim, D., . . . Bram, M. (2016). Influence of Microstructure and Surface Activation of Dual-Phase Membrane Ce0.8Gd0.2O2−δ–FeCo2O4 on Oxygen Permeation. Journal of The American Ceramic Society, 99(1), 349-355
Open this publication in new window or tab >>Influence of Microstructure and Surface Activation of Dual-Phase Membrane Ce0.8Gd0.2O2−δ–FeCo2O4 on Oxygen Permeation
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2016 (English)In: Journal of The American Ceramic Society, ISSN 0002-7820, E-ISSN 1551-2916, Vol. 99, no 1, p. 349-355Article in journal (Refereed) Published
Abstract [en]

Dual-phase oxygen transport membranes are fast-growing research interest for application in oxyfuel combustion process. One such potential candidate is CGO-FCO (60 wt% Ce0.8Gd0.2O2−δ–40 wt% FeCo2O4) identified to provide good oxygen permeation flux with substantial stability in harsh atmosphere. Dense CGO-FCO membranes of 1 mm thickness were fabricated by sintering dry pellets pressed from powders synthesized by one-pot method (modified Pechini process) at 1200°C for 10 h. Microstructure analysis indicates presence of a third orthorhombic perovskite phase in the sintered composite. It was also identified that the spinel phase tends to form an oxygen deficient phase at the grain boundary of spinel and CGO phases. Surface exchange limitation of the membranes was overcome by La0.6Sr0.4Co0.2Fe0.8O3−δ (LSCF) porous layer coating over the composite. The oxygen permeation flux of the CGO-FCO screen printed with a porous layer of 10 μm thick LSCF is 0.11 mL/cm2 per minute at 850°C with argon as sweep and air as feed gas at the rates of 50 and 250 mL/min.

National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-128110 (URN)10.1111/jace.13938 (DOI)
Available from: 2016-05-17 Created: 2016-05-17 Last updated: 2017-07-12
Filippov, S., Jansson, M., Stehr, J. E., Palisaitis, J., Persson, P. O. Å., Ishikawa, F., . . . Buyanova, I. A. (2016). Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires. Nanoscale, 8(35), 15939-15947
Open this publication in new window or tab >>Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires
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2016 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 8, no 35, p. 15939-15947Article in journal (Refereed) Published
Abstract [en]

Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (similar to 50-130 mu eV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2016
Keywords
GaNAs, nanowires, core/shell structures, defects, light emission, polarization
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-123938 (URN)10.1039/c6nr05168e (DOI)000382839100014 ()
Note

Funding agencies: Financial support by the Swedish Energy Agency (grant # P40119-1) and the Swedish Research Council (grants # 2015-05532 and 2008-405) is greatly appreciated. The Knut and Alice Wallenberg Foundation is gratefully acknowledged for support of the Electron Microscopy laboratory in Linkoping.

Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2018-04-25Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0003-3203-7935

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