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Palisaitis, JustinasORCID iD iconorcid.org/0000-0003-3203-7935
Alternative names
Publications (10 of 60) Show all publications
Dorri, S., Ghafoor, N., Palisaitis, J., Stendahl, S., Devishvili, A., Vorobiev, A., . . . Birch, J. (2024). Enhanced quality of single crystal CrBx/TiBy diboride superlattices by controlling boron stoichiometry during sputter deposition. Applied Surface Science, Article ID 159606.
Open this publication in new window or tab >>Enhanced quality of single crystal CrBx/TiBy diboride superlattices by controlling boron stoichiometry during sputter deposition
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2024 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, article id 159606Article in journal (Refereed) Published
Abstract [en]

Single-crystal CrB2/TiB2 diboride superlattices with well-defined layers are promising candidates for neutron optics. However, excess B in sputter-deposited TiBy using a single TiB2 target deteriorates the structural quality of CrBx/TiBy (0001) superlattices. We study the influence of co-sputtering of TiB2 + Ti on the stoichiometry and crystalline quality of 300-nm-thick TiBy single layers and CrBx/TiBy (0001) superlattices on Al2O3(0001) substrates grown by DC magnetron sputter epitaxy at growth-temperatures TS ranging from 600 to 900 °C. By controlling the relative applied powers to the TiB2 and Ti magnetrons, y could be reduced from 3.3 to 0.9. TiB2.3 grown at 750 °C exhibited epitaxial domains about 10x larger than non-co-sputtered films. Close-to-stoichiometry CrB1.7/TiB2.3 superlattices with modulation periods Λ = 6 nm grown at 750 °C showed the highest single crystal quality and best layer definition. TiB2.3 layers display rough top interfaces indicating kinetically limited growth while CrB1.7 forms flat and abrupt top interfaces indicating epitaxial growth with high adatom mobility.

Place, publisher, year, edition, pages
Elsevier, 2024
Keywords
Superlattice, Diboride, Thin film, Co-sputtering, Nanostructure
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-200730 (URN)10.1016/j.apsusc.2024.159606 (DOI)001183388000001 ()
Note

Funding: Swedish National Graduate School in Neutron Scattering (SwedNess), Swedish Foundation for Strategic Research (SSF) GSn15 - 0008, Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials (AFM) at Linköping University (Faculty Grant SFO Mat LiU No. 2009 00971), Center in Nanoscience and technology at LiTH CeNano, Hans Werthén Foundation (IVA), Society of Vacuum Coaters Foundation (SVCF), Swedish Research Council (VR) Grant numbers 2019-00191 (for accelerator-based ion-technological center in tandem accelerator laboratory in Uppsala University), VR and SSF for access to ARTEMI, the Swedish National Infrastructure in Advanced Electron Microscopy (2021-00171 and RIF21-0026), Knut and Alice Wallenberg Foundation for the support of the electron microscopy laboratory at Linköping University (KAW 2015.0043), VR 2021-00159 for the Swedish neutron reflectometer SuperADAM at ILL 10.5291/ILL-DATA.CRG-2964, and Plansee GmbH for providing diboride targets.

Available from: 2024-02-06 Created: 2024-02-06 Last updated: 2024-04-12Bibliographically approved
Pshyk, O. V., Li, X., Petrov, I., Sangiovanni, D. G., Palisaitis, J., Hultman, L. & Greczynski, G. (2023). Discovery of Guinier-Preston zone hardening in refractory nitride ceramics. Acta Materialia, 255, Article ID 119105.
Open this publication in new window or tab >>Discovery of Guinier-Preston zone hardening in refractory nitride ceramics
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2023 (English)In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 255, article id 119105Article in journal (Refereed) Published
Abstract [en]

Traditional age hardening mechanisms in refractory ceramics consist of precipitation of fine particles. These processes are vital for widespread wear-resistant coating applications. Here, we report novel Guinier-Preston zone hardening, previously only known to operate in soft light-metal alloys, taking place in refractory ceramics like multicomponent nitrides. The added superhardening, discovered in thin films of Ti-Al-W-N upon high temperature annealing, comes from the formation of atomic-plane-thick W disks populating {111} planes of the cubic matrix, as observed by atomically resolved high resolution scanning transmission electron microscopy and corroborated by ab initio calculations and molecular dynamics simulations. Guinier-Preston zone hardening concurrent with spinodal decomposition is projected to exist in a range of other ceramic solid solutions and thus provides a new approach for the development of advanced materials with outstanding mechanical properties and higher operational temperature range for the future demanding applications.

Place, publisher, year, edition, pages
Elsevier, 2023
Keywords
Guinier-Preston zone, TiAlN, Ceramics, Age hardening, Spinodal decomposition
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-196410 (URN)10.1016/j.actamat.2023.119105 (DOI)001025995100001 ()
Note

Funding: Swedish Research Council VR [2018-03957, 2021-03652, 2021-04426]; Swedish Energy Agency [51201-1]; Knut and Alice Wallenberg Foundation [KAW2019.0290, CTS 20:150]; Carl Tryggers Stiftelse [21:1272, 2017-00646_9]; Swedish Research Council VR-RFI [VR-2018-0597]; Swedish Foundation for Strategic Research [2021-00171]; Swedish Research Council [RIF21-0026]; Swedish National Infrastructure in Advanced Electron Microscopy [22-4, 2022-03071]; Aforsk Foundation; Competence Center Functional Nanoscale Materials (FunMat-II) VINNOVA;  [KAW2016.0358];  [RIF14-0053]

Available from: 2023-08-01 Created: 2023-08-01 Last updated: 2023-08-31
Ekström, E., Elsukova, A., Grasland, J., Palisaitis, J., Ramanath, G., Persson, P., . . . Eklund, P. (2022). Epitaxial Growth of CaMnO3-y Films on LaAlO3 (112 over bar 0) by Pulsed Direct Current Reactive Magnetron Sputtering. Physica Status Solidi. Rapid Research Letters, 16(4), Article ID 2100504.
Open this publication in new window or tab >>Epitaxial Growth of CaMnO3-y Films on LaAlO3 (112 over bar 0) by Pulsed Direct Current Reactive Magnetron Sputtering
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2022 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 16, no 4, article id 2100504Article in journal (Refereed) Published
Abstract [en]

CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3-y (002) films on a (112 over bar 0)-oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3-y shows growth with a small in-plane tilt of <approximate to 0.2 degrees toward the (200) plane of CaMnO3-y and the (1 over bar 104) with respect to the LaAlO3 (112 over bar 0) substrate. X-ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO3. The LaAlO3 (112 over bar 0) substrate promotes tensile-strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along and , forming stacking faults.

Place, publisher, year, edition, pages
Wiley-V C H Verlag GMBH, 2022
Keywords
CaMnO3; epitaxy; perovskites; PVD
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-182501 (URN)10.1002/pssr.202100504 (DOI)000741329200001 ()
Note

Funding Agencies|Swedish Research Council (VR)Swedish Research Council [2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program [KAW 2020.0196]; Electron Microscopy Laboratory at Linkoping University; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; Swedish Energy AgencySwedish Energy AgencyMaterials & Energy Research Center (MERC) [46519-1]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [RIF 14-0074]

Available from: 2022-01-26 Created: 2022-01-26 Last updated: 2023-05-09Bibliographically approved
Dorri, S., Palisaitis, J., Greczynski, G., Petrov, I., Birch, J., Hultman, L. & Bakhit, B. (2022). Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering. Corrosion Science, 206, Article ID 110493.
Open this publication in new window or tab >>Oxidation kinetics of overstoichiometric TiB2 thin films grown by DC magnetron sputtering
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2022 (English)In: Corrosion Science, ISSN 0010-938X, E-ISSN 1879-0496, Vol. 206, article id 110493Article in journal (Refereed) Published
Abstract [en]

We systematically study the oxidation properties of sputter-deposited TiB2.5 coatings up to 700 °C. Oxide-scale thickness dox increases linearly with time ta for 300, 400, 500, and 700 °C, while an oxidation-protective behavior occurs with dox=250∙ta0.2 at 600 °C. Oxide-layer’s structure changes from amorphous to rutile/anatase-TiO2 at temperatures ≥ 500 °C. Abnormally low oxidation rate at 600 °C is attributed to a highly dense columnar TiO2-sublayer growing near oxide/film interface with a top-amorphous thin layer, suppressing oxygen diffusion. A model is proposed to explain the oxide-scale evolution at 600 °C. Decreasing heating rate to 1.0 °C/min plays a noticeable role in the TiB2.5 oxidation.

Place, publisher, year, edition, pages
Pergamon-Elsevier Science Ltd, 2022
Keywords
Sputtering, Thin films, Titanium diboride (TiB), Microstructure, Oxidation
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-188286 (URN)10.1016/j.corsci.2022.110493 (DOI)000842008100003 ()
Note

Funding: Swedish Research Council VR [2018-03957, 2019-00191, 2021-00357]; Swedish Foundation for Strategic Research (SSF); Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials (AFM) at Link o ?; ping University (Faculty Grant SFO Mat LiU) [2009 00971]; Swedish National Graduate School in Neutron Scattering (SwedNess); Knut and Alice Wallenberg Foundation [KAW 2015.0043]

Available from: 2022-09-08 Created: 2022-09-08 Last updated: 2022-10-07
Shu, R., Han, Z., Elsukova, A., Zhu, Y., Qin, P., Jiang, F., . . . Liu, W. (2022). Solid-State Janus Nanoprecipitation Enables Amorphous-Like Heat Conduction in Crystalline Mg3Sb2-Based Thermoelectric Materials. Advanced Science, 9(25), Article ID 2202594.
Open this publication in new window or tab >>Solid-State Janus Nanoprecipitation Enables Amorphous-Like Heat Conduction in Crystalline Mg3Sb2-Based Thermoelectric Materials
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2022 (English)In: Advanced Science, E-ISSN 2198-3844, Vol. 9, no 25, article id 2202594Article in journal (Refereed) Published
Abstract [en]

Solid-state precipitation can be used to tailor material properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, unconventional Janus-type nanoprecipitates are uncovered in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local comelting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism.

Place, publisher, year, edition, pages
Wiley, 2022
Keywords
atom probe tomography; Janus nanoprecipitation; low thermal conductivity; Mg3Sb2; thermalelectrics
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-187372 (URN)10.1002/advs.202202594 (DOI)000826658200001 ()35851767 (PubMedID)
Note

Funding Agencies|National Key Research and Development Program of China [2018YFB0703600]; National Natural Science Foundation of China [51872133]; Guangdong Innovative and Entrepreneurial Research Team Program [2016ZT06G587]; Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province [2021B1212040001]; Tencent Foundation through the XPLORER PRIZE; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; Knut and Alice Wallenberg foundation through the Wallenberg Academy Fellows program [KAW-2020.0196]; Swedish Foundation for Strategic Research (SSF) [RIF 14-0074]; German Science Foundation (DFG) [SFB 917]

Available from: 2022-08-19 Created: 2022-08-19 Last updated: 2023-12-28Bibliographically approved
Bakhit, B., Palisaitis, J., Wu, Z., Sortica, M. A., Primetzhofer, D., Persson, P. O. Å., . . . Greczynski, G. (2021). Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films. Scripta Materialia, 191, 120-125
Open this publication in new window or tab >>Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films
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2021 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 191, p. 120-125Article in journal (Refereed) Published
Abstract [en]

We recently showed that sputter-deposited Zr1-xTaxBy thin films have hexagonal AlB2-type columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. As-deposited layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we study the mechanical properties of ZrB2.4, Zr0.8Ta0.2B1.8, and Zr0.7Ta0.3B1.5 films annealed in Ar atmosphere as a function of annealing temperature Ta up to 1200 °C. In-situ and ex-situ nanoindentation analyses reveal that all films undergo age hardening up to Ta = 800 °C, with the highest hardness achieved for Zr0.8Ta0.2B1.8 (45.5±1.0 GPa). The age hardening, which occurs without any phase separation or decomposition, can be explained by point-defect recovery that enhances chemical bond density. Although hardness decreases at Ta > 800 °C due mainly to recrystallization, column coarsening, and planar defect annihilation, all layers show hardness values above 34 GPa over the entire Ta range.

Place, publisher, year, edition, pages
Elsevier, 2021
Keywords
Thin films; Transition-metal (TM) diboridesAge hardening; Thermal stability; Hardness and elastic modulus
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-170224 (URN)10.1016/j.scriptamat.2020.09.026 (DOI)urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-170224 ()2-s2.0-85091672167 (Scopus ID)
Available from: 2020-10-02 Created: 2020-10-02 Last updated: 2024-02-01Bibliographically approved
Rouf, P., O´brien, N., Buttera, S. C., Martinovic, I., Bakhit, B., Martinsson, E., . . . Pedersen, H. (2020). Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by Atomic Layer Deposition. Journal of Materials Chemistry C, 8(25), 8457-8465
Open this publication in new window or tab >>Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by Atomic Layer Deposition
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2020 (English)In: Journal of Materials Chemistry C, ISSN 2050-7526, E-ISSN 2050-7534, Vol. 8, no 25, p. 8457-8465Article in journal (Refereed) Published
Abstract [en]

Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an AlN buffer layer or nitridized sapphire as substrate is used to facilitate the GaN growth. Here, we present a low temperature atomic layer deposition (ALD) process using tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting behaviour between 130–250 °C with a growth rate of 1.4 Å per cycle. The GaN films produced were crystalline on Si (100) at all deposition temperatures with a near stochiometric Ga/N ratio with low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ∼3.42 eV and the Fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based electronic devices.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2020
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-169938 (URN)10.1039/d0tc02085k (DOI)000545331300009 ()2-s2.0-85087704720 (Scopus ID)
Available from: 2020-09-25 Created: 2020-09-25 Last updated: 2022-09-05Bibliographically approved
Thörnberg, J., Palisaitis, J., Hellgren, N., Klimashin, F. F., Ghafoor, N., Zhirkov, I., . . . Rosén, J. (2020). Microstructure and materials properties of understoichiometric TiBx thin films grown by HiPIMS. Surface & Coatings Technology, 404, Article ID 126537.
Open this publication in new window or tab >>Microstructure and materials properties of understoichiometric TiBx thin films grown by HiPIMS
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2020 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 404, article id 126537Article in journal (Refereed) Published
Abstract [en]

TiBx thin films with a B content of 1.43 ≤ x ≤ 2.70 were synthesized using high-power impulse magnetron sputtering (HiPIMS) and direct-current magnetron sputtering (DCMS). HiPIMS allows compositions ranging from understoichiometric to overstoichiometric dense TiBx thin films with a B/Ti ratio between 1.43 and 2.06, while DCMS yields overstoichiometric TiBx films with a B/Ti ratio ranging from 2.20 to 2.70. Excess B in overstoichiometric TiBx thin films from DCMS results in a hardness up to 37.7 ± 0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase interlacing stoichiometric TiB2 columnar structures. We furthermore show that understoichiometric TiB1.43 thin films synthesized by HiPIMS, where the deficiency of B is found to be accommodated by Ti-rich planar defects, exhibit a superior hardness of 43.9 ± 0.9 GPa. The apparent fracture toughness and thermal conductivity of understoichiometric TiB1.43 HiPIMS films are 4.2 ± 0.1 MPa√m and 2.46 ± 0.22 W/(m·K), respectively, as compared to corresponding values for overstoichiometric TiB2.70 DCMS film samples of 3.1 ± 0.1 MPa√m and 4.52 ± 0.45 W/(m·K). This work increases the fundamental understanding of understoichiometric TiBx thin films and their materials properties, and shows that understoichiometric films have properties matching or going beyond those with excess B.

Place, publisher, year, edition, pages
Elsevier, 2020
Keywords
Borides, Stoichiometry, Titanium, Mechanical properties, Microstructure, HiPIMS
National Category
Other Materials Engineering
Identifiers
urn:nbn:se:liu:diva-172905 (URN)10.1016/j.surfcoat.2020.126537 (DOI)000597889400057 ()2-s2.0-85094613138 (Scopus ID)
Note

Fulltext published under Creative Commons license CC BY 4.0

https://creativecommons.org/licenses/by/4.0/

Funding agencies: Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0004]; Research Infrastructure Fellow program from the Knut and Alice Wallenberg (KAW) Foundation [RIF 14-0074]; KAW; Swedish Government Strategic Research Area

Available from: 2021-01-26 Created: 2021-01-26 Last updated: 2021-12-29Bibliographically approved
Bakhit, B., Palisaitis, J., Persson, P. O. .., Alling, B., Rosen, J., Hultman, L., . . . Greczynski, G. (2020). Self-organized columnar Zr0.7Ta0.3B1.5 core/shell-nanostructure thin films. Surface & Coatings Technology, 401, Article ID 126237.
Open this publication in new window or tab >>Self-organized columnar Zr0.7Ta0.3B1.5 core/shell-nanostructure thin films
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2020 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 401, article id 126237Article in journal (Refereed) Published
Abstract [en]

We recently showed that Zr1−xTaxBy thin films have columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. Layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we determine the atomic-scale nanostructure of sputter-deposited columnar Zr0.7Ta0.3B1.5 thin films. The columns, 95 ± 17 Å, are core/shell nanostructures in which 80 ± 15-Å cores are crystalline hexagonal-AlB2-structure Zr-rich stoichiometric Zr1−xTaxB2. The shell structure is a narrow dense, disordered region that is Ta-rich and highly B-deficient. The cores are formed under intense ion mixing via preferential Ta segregation, due to the lower formation enthalpy of TaB2 than ZrB2, in response to the chemical driving force to form a stoichiometric compound. The films with unique combination of nanosized crystalline cores and dense metallic-glass-like shells provide excellent mechanical properties.

Place, publisher, year, edition, pages
Elsevier, 2020
Keywords
Thin films, Transition-metal (TM) diborides, Self-organized, Core/shell nanostructure, Hardness and toughness
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-169201 (URN)10.1016/j.surfcoat.2020.126237 (DOI)000583161500008 ()2-s2.0-85089079938 (Scopus ID)
Note

Funding agencies:  Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; electron microscopy laboratory in Linkoping; Swedish Research Council VRSwedish Research Council [2014-5790, 2018-03957, 2019-05403, 642-2013-8020]; VINNOVA Gran

Available from: 2020-09-11 Created: 2020-09-11 Last updated: 2021-12-28Bibliographically approved
Adam, R. E., Chalangar, E., Pirhashemi, M., Pozina, G., Liu, X., Palisaitis, J., . . . Nur, O. (2019). Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activities. RSC Advances, 9(52), 30585-30598
Open this publication in new window or tab >>Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activities
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2019 (English)In: RSC Advances, E-ISSN 2046-2069, Vol. 9, no 52, p. 30585-30598Article in journal (Refereed) Published
Abstract [en]

High-efficiency photocatalysts are crucial for the removal of organic pollutants and environmental sustainability. In the present work, we report on a new low-temperature hydrothermal chemical method, assisted by ultrasonication, to synthesize disruptive plasmonic ZnO/graphene/Ag/AgI nanocomposites for solar-driven photocatalysis. The plasmonic nanocomposites were investigated by a wide range of characterization techniques, confirming successful formation of photocatalysts with excellent degradation efficiency. Using Congo red as a model dye molecule, our experimental results demonstrated a photocatalytic reactivity exceeding 90% efficiency after one hour simulated solar irradiation. The significantly enhanced degradation efficiency is attributed to improved electronic properties of the nanocomposites by hybridization of the graphene and to the addition of Ag/AgI which generates a strong surface plasmon resonance effect in the metallic silver further improving the photocatalytic activity and stability under solar irradiation. Scavenger experiments suggest that superoxide and hydroxyl radicals are responsible for the photodegradation of Congo red. Our findings are important for the fundamental understanding of the photocatalytic mechanism of ZnO/graphene/Ag/AgI nanocomposites and can lead to further development of novel efficient photocatalyst materials.

Place, publisher, year, edition, pages
Royal Meteorological Society, 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-160568 (URN)10.1039/C9RA06273D (DOI)000487989300064 ()
Note

Funding agencies: Department of Science and Technology (ITN) at Campus Norrkoping, Linkoping University, Sweden; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation

Available from: 2019-09-30 Created: 2019-09-30 Last updated: 2024-01-08Bibliographically approved
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ORCID iD: ORCID iD iconorcid.org/0000-0003-3203-7935

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