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Pearce, Ruth
Publications (10 of 15) Show all publications
Pearce, R., Eriksson, J., Iakimov, T., Hultman, L., Lloyd Spetz, A. & Yakimova, R. (2013). On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy. ACS Nano, 7(5), 4647-4656
Open this publication in new window or tab >>On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy
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2013 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 7, no 5, p. 4647-4656Article in journal (Refereed) Published
Abstract [en]

Using environmental scanning Kelvin probe microscopy we show that the position of the Fermi level of single layer graphene is more sensitive to chemical gating than that of double layer graphene. We calculate that the difference in sensitivity to chemical gating is not entirely due to the difference in band structure of 1 and 2 layer graphene. The findings are important for gas sensing where the sensitivity of the electronic properties to gas adsorption are monitored and suggest that single layer graphene could make a more sensitive gas sensor than double layer graphene. We propose that the difference in surface potential between adsorbate-free single and double layer graphene, measured using scanning kelvin probe microscopy, can be used as a non-invasive method of estimating substrate-induced doping in epitaxial graphene.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2013
Keywords
Epitaxial graphene, environmental gating, Scanning Kelvin Probe Microscopy (SKPM), gas sensor
National Category
Other Materials Engineering
Identifiers
urn:nbn:se:liu:diva-92579 (URN)10.1021/nn3052633 (DOI)000319856300107 ()
Note

Ruth Pearce, address from march 2012:

NPL Management Ltd, Registered office: Serco House | 16 Bartley Wood Business Park | Hook, Hampshire | UK | RG27 9UY

Available from: 2013-05-13 Created: 2013-05-13 Last updated: 2017-12-06Bibliographically approved
Andersson, M., Lloyd Spetz, A. & Pearce, R. (2013). Recent trends in Silicon Carbide (SiC) and Graphene based gas sensors. In: R. Jaaniso and O. K. Tan (Ed.), Semiconductor Gas Sensors: (pp. 117-158). Woodhead Publishing Limited
Open this publication in new window or tab >>Recent trends in Silicon Carbide (SiC) and Graphene based gas sensors
2013 (English)In: Semiconductor Gas Sensors / [ed] R. Jaaniso and O. K. Tan, Woodhead Publishing Limited, 2013, p. 117-158Chapter in book (Refereed)
Abstract [en]

The introduction of silicon carbide (SiC) as the semiconductorin gas sensitive field effect devices has tremendously improved this sensor platform extending the temperature range and number of detectable gases. Here we review the recent trends in research, starting with transducer mechanisms, latest findings regarding the detection mechanism, and present new material combinations as sensing layers and smart operation of the field effect sensors enabling one sensor to act as a sensor array. Introducing epitaxially-grown graphene on SiC as gas sensing layer shows the potential of ppb detection of NO2 .

Place, publisher, year, edition, pages
Woodhead Publishing Limited, 2013
Series
Woodhead Publishing Series in Electronic and Optical Materials, ISSN 2050-1501, E-ISSN 2050-151X ; 38
Keywords
Field effect gas sensors, SiC gas sensors, smart sensing, temperature cycling, epitaxialgraphene on SiC gas sensors
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
urn:nbn:se:liu:diva-102960 (URN)10.1533/9780857098665 (DOI)978-0-85709-236-6 (ISBN)978-0-85709-866-5 (ISBN)
Available from: 2014-01-08 Created: 2014-01-08 Last updated: 2018-02-19Bibliographically approved
Pearce, R., Yakimova, R., Eriksson, J., Hultman, L., Andersson, M. & Lloyd Spetz, A. (2012). Development of FETs and resistive devices based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection. In: Materials Science Forum Vols 717 - 720: . Paper presented at 14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA (pp. 687-690). Trans Tech Publications Inc., 717-720
Open this publication in new window or tab >>Development of FETs and resistive devices based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
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2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, p. 687-690Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentration for all sensors. The concentration of NO2 required to cause this transition varied for different graphene samples and is attributed to varying degrees of substrate induced Fermi-level (E-F) pinning above the Dirac point. The work function of a single layer device increased steadily with increasing NO2 concentration indicating no change in reaction mechanism for high and low concentrations despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012
Series
Materials Science Forum, ISSN 0255-5476 ; Vols 717 - 720
Keywords
epitaxial graphene; gra-FET; NO2 sensor; work function
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-87577 (URN)10.4028/www.scientific.net/MSF.717-720.687 (DOI)000309431000164 ()978-3-03785-419-8 (ISBN)
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-01-18 Created: 2013-01-18 Last updated: 2016-08-31Bibliographically approved
Eriksson, J., Pearce, R., Iakimov, T., Virojanadara, C., Gogova, D., Andersson, M., . . . Yakimova, R. (2012). The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC. Applied Physics Letters, 100(24), 241607
Open this publication in new window or tab >>The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 24, p. 241607-Article in journal (Refereed) Published
Abstract [en]

A pivotal issue for the fabrication of electronic devices on epitaxial graphene on SiC is controlling the number of layers and reducing localized thickness inhomogeneities. Of equal importance is to understand what governs the unintentional doping of the graphene from the substrate. The influence of substrate surface topography on these two issues was studied by work function measurements and local surface potential mapping. The carrier concentration and the uniformity of epitaxial graphene samples grown under identical conditions and on substrates of nominally identical orientation were both found to depend strongly on the terrace width of the SiC substrate after growth.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-78669 (URN)10.1063/1.4729556 (DOI)000305269200022 ()
Available from: 2012-06-18 Created: 2012-06-18 Last updated: 2017-12-07
Yakimova, R., Selegård, L., Khranovskyy, V., Pearce, R., Lloyd Spetz, A. & Uvdal, K. (2012). ZnO materials and surface tailoring for biosensing. Frontiers in bioscience (Elite edition), 4(1), 254-278
Open this publication in new window or tab >>ZnO materials and surface tailoring for biosensing
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2012 (English)In: Frontiers in bioscience (Elite edition), ISSN 1945-0508, Vol. 4, no 1, p. 254-278Article in journal (Refereed) Published
Abstract [en]

ZnO nanostructured materials, such as films and nanoparticles, could provide a suitable platform for development of high performance biosensors due to their unique fundamental material properties. This paper reviews different preparation techniques of ZnO nanocrystals and material issues like wettability, biocompatibility and toxicity, which have an important relevance to biosensor functionality. Efforts are made to summarize and analyze existing results regarding surface modification and molecular attachments for successful biofunctionalization and understanding of the mechanisms involved. A section is devoted to implementations of tailored surfaces in biosensors. We end with conclusions on the feasibility of using ZnO nanocrystals for biosensing.

Place, publisher, year, edition, pages
Albertson, NY, United States: Frontiers in Bioscience, 2012
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-79152 (URN)10.2741/374 (DOI)22201869 (PubMedID)
Available from: 2012-06-29 Created: 2012-06-29 Last updated: 2015-05-29Bibliographically approved
Pearce, R., Yakimova, R., Hultman, L., Andersson, M. & Lloyd Spetz, A. (2011). Development of FETs based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection. In: Proceedings of the International Conference on Silicon Carbide and Related materials. Paper presented at ICSCRM2011 (pp. 405).
Open this publication in new window or tab >>Development of FETs based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
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2011 (English)In: Proceedings of the International Conference on Silicon Carbide and Related materials, 2011, p. 405-Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-73846 (URN)
Conference
ICSCRM2011
Available from: 2012-01-14 Created: 2012-01-14 Last updated: 2016-08-31
Pearce, R., Iakimov, T., Andersson, M., Hultman, L., Lloyd Spetz, A. & Yakimova, R. (2011). Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection. Sensors and actuators. B, Chemical, 155(2), 451-455
Open this publication in new window or tab >>Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection
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2011 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 155, no 2, p. 451-455Article in journal (Refereed) Published
Abstract [en]

Epitaxially grown single layer and multi layer graphene on SiC devices were fabricated and compared for response towards NO(2). Due to electron donation from SiC:, single layer graphene is n-type with a very low carrier concentration. The choice of substrate is demonstrated to enable tailoring of the electronic properties of graphene, with a SiC substrate realising simple resistive devices tuned for extremely sensitive NO(2) detection. The gas exposed uppermost layer of the multi layer device is screened from the SiC by the intermediate layers leading to a p-type nature with a higher concentration of charge carriers and therefore, a lower gas response. The single layer graphene device is thought to undergo an n-p transition upon exposure to increasing concentrations of NO(2) indicated by a change in response direction. This transition is likely to be due to the transfer of electrons to NO(2) making holes the majority carriers. (C) 2011 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam., 2011
Keywords
Epitaxial graphene; Gas sensor; NO(2); SiC
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-69793 (URN)10.1016/j.snb.2010.12.046 (DOI)000291774100003 ()
Note

Original Publication: Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova, Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection, 2011, Sensors and actuators. B, Chemical, (155), 2, 451-455. http://dx.doi.org/10.1016/j.snb.2010.12.046 Copyright: Elsevier Science B.V., Amsterdam. http://www.elsevier.com/

Available from: 2011-08-10 Created: 2011-08-08 Last updated: 2017-12-08
Darmastuti, Z., Pearce, R., Lloyd Spetz, A. & Andersson, M. (2011). The influence of gate bias and structure on the CO sensing performance of SiC based field effect sensors. In: Proceedings of IEEE Sensors Conference: . Paper presented at 10th IEEE SENSORS Conference 2011, SENSORS 2011; Limerick; Ireland (pp. 133-136).
Open this publication in new window or tab >>The influence of gate bias and structure on the CO sensing performance of SiC based field effect sensors
2011 (English)In: Proceedings of IEEE Sensors Conference, 2011, p. 133-136Conference paper, Published paper (Refereed)
Abstract [en]

SiC based Field Effect Transistor gas sensors with Pt as gate material have previously been shown to exhibit a binary CO response, sharply switching between a small and a large value with increasing CO or decreasing O2 concentration or temperature. In this study Pt gates with different structures have been fabricated by dc magnetron sputtering at different argon pressures and subjected to various CO/O2 mixtures under various temperatures and gate bias conditions. The influence of gate bias and gate structure on the CO response switch point has been investigated. The results suggest that the more porous the gate material or smaller the bias, the lower the temperature or higher the CO concentration required in order to induce the transition between a small and a large response towards CO. These trends are suggested to reflect the adsorption, spill-over, and reaction characteristics of oxygen chemisorbed to the Pt and insulator surfaces.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-73847 (URN)10.1109/ICSENS.2011.6127261 (DOI)978-1-4244-9290-9 (ISBN)
Conference
10th IEEE SENSORS Conference 2011, SENSORS 2011; Limerick; Ireland
Available from: 2012-01-14 Created: 2012-01-14 Last updated: 2014-10-08
Andersson, M., Lloyd Spetz, A. & Pearce, R. (2011). Tunable gas alarms for high temperature applications based on 4H-SiC MISFET devices. In: Proceedings of the International Conference on Silicon Carbide and Related materials. Paper presented at ICSCRM2011 (pp. 365).
Open this publication in new window or tab >>Tunable gas alarms for high temperature applications based on 4H-SiC MISFET devices
2011 (English)In: Proceedings of the International Conference on Silicon Carbide and Related materials, 2011, p. 365-Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-73845 (URN)
Conference
ICSCRM2011
Available from: 2012-01-14 Created: 2012-01-14 Last updated: 2014-01-09
Lloyd Spetz, A., Pearce, R., Buchholt, K., Bjorklund, R. & Andersson, M. (2010). FET sensor devices, state of the art research and commercialization. In: IMCS13: . Paper presented at The 13th International Meeting on Chemical Sensors (IMCS-13), July 11-14, 2010, University of Western Australia, Perth, Australia.
Open this publication in new window or tab >>FET sensor devices, state of the art research and commercialization
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2010 (English)In: IMCS13, 2010Conference paper, Published paper (Refereed)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-63257 (URN)
Conference
The 13th International Meeting on Chemical Sensors (IMCS-13), July 11-14, 2010, University of Western Australia, Perth, Australia
Available from: 2010-12-13 Created: 2010-12-13 Last updated: 2016-06-14
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