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Shubina, Tatiana
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Publications (10 of 33) Show all publications
Toropov, A., Kitaev, Y. E. E., Shubina, T., Paskov, P., Bergman, P. & Monemar, B. (2008). Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN. Physical Review B. Condensed Matter and Materials Physics, 77(19)
Open this publication in new window or tab >>Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
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2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 77, no 19Article in journal (Refereed) Published
Abstract [en]

The selection rules of phonon-assisted optical transitions of bound excitons in bulk wurtzite GaN are studied both experimentally and theoretically. The linearly polarized photoluminescence is detected within the phonon replicas of the lines of impurity bound excitons in the geometry, when the light wave vector is normal to the hexagonal axis, and the electric field vector is either perpendicular or parallel to it. The degree and even sign of the linear polarization is found to depend on the symmetry of the involved optical phonon. To explain these data, a group-theory approach is applied to derive the selection rules for zero-phonon and phonon-assisted transitions involving excitons bound to either substitutional (C3v symmetry) or interstitial (C3v, Cs, or C1 symmetries) impurities. The obtained theoretical selection rules are in an agreement with the experimental results, provided the exciton is bound to the impurities with the C3v symmetry. © 2008 The American Physical Society.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-42555 (URN)10.1103/PhysRevB.77.195201 (DOI)65879 (Local ID)65879 (Archive number)65879 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13
Monemar, B., Paskov, P., Pozina, G., Bergman, P., Hemmingsson, C., Toropov, A., . . . Paskova, T. (2008). Properties of dopants and defects in GaN from bound exciton spectra. In: Meijo International Symposium on Nitride Semiconductors 2008,2008.
Open this publication in new window or tab >>Properties of dopants and defects in GaN from bound exciton spectra
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2008 (English)In: Meijo International Symposium on Nitride Semiconductors 2008,2008, 2008Conference paper, Published paper (Other academic)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-44184 (URN)75979 (Local ID)75979 (Archive number)75979 (OAI)
Note
INVITED TALKAvailable from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22
Choubina, T., Glazov, M., Toropov, A., Ivanov, I. G., Gippius, N., Vasson, A., . . . Monemar, B. (2008). Realization of slow light in GaN crystals. In: IWN 2008,2008.
Open this publication in new window or tab >>Realization of slow light in GaN crystals
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2008 (English)In: IWN 2008,2008, 2008Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-44199 (URN)76026 (Local ID)76026 (Archive number)76026 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22
Shubina, T., Glazov, M. M., Toropov, A. A., Gippius, N. A., Vasson, A., Leymarie, J., . . . Monemar, B. (2008). Resonant light delay in GaN with ballistic and diffusive propagation. Physical Review Letters, 100(8)
Open this publication in new window or tab >>Resonant light delay in GaN with ballistic and diffusive propagation
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2008 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 100, no 8Article in journal (Refereed) Published
Abstract [en]

We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-45904 (URN)10.1103/PhysRevLett.100.087402 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13
Choubina, T., Glazov, M., Toropov, A., Gippius, N., Bergman, P., Monemar, B., . . . Kopev, P. (2008). Slow light in GaN. In: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008 (pp. 257).
Open this publication in new window or tab >>Slow light in GaN
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2008 (English)In: 16th Int. Symp. ¿Nanostructures: Physics and Technology,2008, 2008, p. 257-Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-44186 (URN)75981 (Local ID)75981 (Archive number)75981 (OAI)
Note
INVITED TALKAvailable from: 2009-10-10 Created: 2009-10-10
Choubina, T., Glazov, M., Toropov, A., Gippius, N., Vasson, A., Leymarie, J., . . . Monemar, B. (2008). The slow light in GaN. In: ICPS2008,2008 (pp. 647).
Open this publication in new window or tab >>The slow light in GaN
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2008 (English)In: ICPS2008,2008, 2008, p. 647-Conference paper, Published paper (Refereed)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-44185 (URN)75980 (Local ID)75980 (Archive number)75980 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-09-22
Shubina, T., Glazov, M., Ivanov, S., Vasson, A., Leymarie, J., Monemar, B., . . . Nanishi, Y. (2007). Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN. Physica Status Solidi. C, Current topics in solid state physics, 4(7), 2474-2477
Open this publication in new window or tab >>Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN
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2007 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, no 7, p. 2474-2477Article in journal (Refereed) Published
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-41022 (URN)54956 (Local ID)54956 (Archive number)54956 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13
Shubina, T., Ivanov, S., Jmerik, V., Mizerov, A., Leymarie, J., Vasson, A., . . . Kopev, P. (2007). Inhomogeneous InGaN and InN with In-enriched Nanostructures. In: -,2007 (pp. 269).
Open this publication in new window or tab >>Inhomogeneous InGaN and InN with In-enriched Nanostructures
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2007 (English)In: -,2007, 2007, p. 269-Conference paper, Published paper (Refereed)
Abstract [en]

  

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-41025 (URN)54962 (Local ID)54962 (Archive number)54962 (OAI)
Available from: 2009-10-10 Created: 2009-10-10
Choubina, T., Glasov, M., Toropov, A., Ivchenko, E., Usui, A., Bergman, P. & Monemar, B. (2007). Light diffusion in GaN epilayers. In: 3rd International Conference on Spontaneous Coherence in Excitonic System,2007.
Open this publication in new window or tab >>Light diffusion in GaN epilayers
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2007 (English)In: 3rd International Conference on Spontaneous Coherence in Excitonic System,2007, 2007Conference paper, Published paper (Other academic)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-44187 (URN)75982 (Local ID)75982 (Archive number)75982 (OAI)
Available from: 2009-10-10 Created: 2009-10-10
Shubina, T., Vasson, A., Leymarie, J., Gippius, N., Jmerik, V., Monemar, B. & Ivanov, S. (2007). Localized plasmons at pores and clusters within inhomogeneous indium nitride films. Physica Status Solidi. C, Current topics in solid state physics, 4(7), 2445-2448
Open this publication in new window or tab >>Localized plasmons at pores and clusters within inhomogeneous indium nitride films
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2007 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 4, no 7, p. 2445-2448Article in journal (Refereed) Published
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-41017 (URN)54934 (Local ID)54934 (Archive number)54934 (OAI)
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13
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