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Carlsson, Fredrik
Publications (10 of 18) Show all publications
Storasta, L., Carlsson, F., Bergman, P. & Janzén, E. (2005). Recombination enhanced defect annealing in 4H-SiC. In: Materials Science Forum, Vols. 483-485. Paper presented at ECSCRM2004 (pp. 369-372). , 483
Open this publication in new window or tab >>Recombination enhanced defect annealing in 4H-SiC
2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, p. 369-372Conference paper, Published paper (Refereed)
Abstract [en]

Recombination enhanced defect annealing of intrinsic defects in 4H-SiC, created by low energy electron irradiation, has been observed. A reduction the defect concentration at temperature lower than the normal annealing temperature of 400&DEG, C and 800&DEG, C is observed after either above bandgap laser excitation or forward biasing of a pin-diode. The presence of the defects has been studied both electrically and optically using capacitance transient spectroscopy and low temperature photoluminescence. Photoluminescence measurements show that several lines, normally detected after electron irradiation, have almost or entirely disappeared by recombination enhanced annealing at room temperature. From capacitance transient measurements, the annealing enhancement is found to be largest for the HS2 hole trap, while the EH1 and EH3 electron traps also anneal out by recombination enhanced reaction but at a lower rate.

Keywords
SiC, radiation damage, enhanced annealing
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-48224 (URN)
Conference
ECSCRM2004
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13
Gali, A., Deák, P., Rauls, E., Nguyen, S. T., Ivanov, I. G., Carlsson, F., . . . Choyke, W. (2004). Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC. In: Mater. Sci. Forum, Vol. 457-460. Paper presented at ICSCRM2003 (pp. 443). Trans Tech Publications Inc.
Open this publication in new window or tab >>Antisites as possible origin of irradiation induced photoluminescence centers in SiC: A theoretical study on clusters of antisites and carbon interstitials in 4H-SiC
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2004 (English)In: Mater. Sci. Forum, Vol. 457-460, Trans Tech Publications Inc. , 2004, p. 443-Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-41206 (URN)55342 (Local ID)55342 (Archive number)55342 (OAI)
Conference
ICSCRM2003
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2010-12-15
Gali, A., Deak, P., Rauls, E., Nguyen, T. S., Ivanov, I. G., Carlsson, F., . . . Choyke, W. (2003). Anti-site pair in SiC: A model of the DI center. In: Physica B (pp. 175-179). , 340-342
Open this publication in new window or tab >>Anti-site pair in SiC: A model of the DI center
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2003 (English)In: Physica B, 2003, Vol. 340-342, p. 175-179Conference paper, Published paper (Refereed)
Abstract [en]

The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model. © 2003 Elsevier B.V. All rights reserved.

Keywords
Photoluminescence center, Silicon carbide
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-46348 (URN)10.1016/j.physb.2003.09.043 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-10-19
Gali, A., Deak, P., Rauls, E., Nguyen, T. S., Ivanov, I. G., Carlsson, F., . . . Choyke, W. (2003). Correlation between the antisite pair and the D-I center in SiC. Physical Review B. Condensed Matter and Materials Physics, 67(15)
Open this publication in new window or tab >>Correlation between the antisite pair and the D-I center in SiC
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2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 15Article in journal (Refereed) Published
Abstract [en]

The D-I low temperature photoluminescence center is a well-known defect stable up to 1700 degreesC annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce the measured one-electron level position and local vibration modes of the D-I center, and are consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the antisite pair in its paramagnetic state as a means to confirm a model.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-47802 (URN)10.1103/PhysRevB.67.155203 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13
Janzén, E., Ivanov, I. G., Nguyen, S. T., Magnusson, B., Zolnai, Z., Henry, A., . . . Carlsson, F. (2003). Defects in SiC. In: Physica B: Condensed Matter, Vols. 340-342. Paper presented at ICDS-22 (pp. 15-24). , 340
Open this publication in new window or tab >>Defects in SiC
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2003 (English)In: Physica B: Condensed Matter, Vols. 340-342, 2003, Vol. 340, p. 15-24Conference paper, Published paper (Refereed)
Abstract [en]

Recent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived and the ionization energy for the N donor at hexagonal site is determined. Optical and electrical studies of the D-I center reveal the pseudodonor nature of this defect. Defects in high-purity semi-insulating (SI) SiC substrates including the carbon vacancy (V-C), silicon vacancy (V-Si), and (V-C-C-Si) pair are studied. The annealing behavior of these defects and their role in carrier compensation in SI 4H-SiC are discussed. (C) 2003 Elsevier B.V. All rights reserved.

Keywords
shallow donor, pseudodonor, intrinsic defect, semi-insulating
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-46295 (URN)10.1016/j.physb.2003.09.001 (DOI)
Conference
ICDS-22
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08
Carlsson, F., Sridhara, S., Hallen, A., Bergman, J. & Janzén, E. (2003). D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC. In: Materials Science Forum, Vols. 433-436. Paper presented at ECSCRM2002 (pp. 345-348). , 433-4
Open this publication in new window or tab >>D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, p. 345-348Conference paper, Published paper (Refereed)
Abstract [en]

In most semi-conductor processing ion implantation is a key technology. The drawback of ion implantation is that a great deal of lattice defects, such as vacancies, interstitials, anti sites and complexes, are introduced. The annealing behaviour of these defects is important for the viability of ion implantation as a commonly used method. In SiC a defect that is only seen after ion implantation and not after irradiation with neutrons or electrons is the D-II defect. The use of Si or C as implanted species have made it possible to investigate the D-II photoluminescence (PL) intensity dependence on an excess of either of the two constituents in SiC. The effect of performing a hot implant at 600degreesC compared to a room temperature implant was also looked into. The D-II PL intensity was measured after a 1500degreesC anneal. When the implantation was performed at room temperature the C implanted samples showed a significantly higher D-II luminescence than the Si implanted. This makes it tempting to assume that a surplus of C and likely C interstitials are involved in the defect formation. However, when the implantation is done at 600degreesC the difference between Si and C implanted samples almost disappears and a slightly higher D-II intensity can be seen in the Si implanted samples. This effect may be due to the mobility of C interstitials at temperatures above 500degreesC. This clearly demonstrates the effect of hot implantation that there is a major change in D-II PL intensity even after a 1500degreesC anneal.

Keywords
annealing, D-II, ion implantation, SiC
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-48547 (URN)
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06
Bergman, J., Jakobsson, H., Storasta, L., Carlsson, F., Magnusson, B., Sridhara, S., . . . Janzén, E. (2002). Characterisation and defects in silicon carbide. In: Materials Science Forum, Vols. 389-393. Paper presented at ICSCRM2001. , 389-3
Open this publication in new window or tab >>Characterisation and defects in silicon carbide
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2002 (English)In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3Conference paper, Published paper (Refereed)
Abstract [en]

In this work we present experimental results of several defects in 4H Sic that are of interest both from a fundamental and physical point of view. And also of great importance for device applications utilizing the Sic material. These defects include the temperature stable so called D1 defect, which is created after irradiation. This optical emission has been identified as an isoelectronic defect bound at a hole attractive pseudodonor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). It also includes the UD1 defect observed using absorption and FTIR and which is believed to be responsible for the semi-insulating behavior of material grown by the High temperature, HTCVD technique. Finally, we have described the formation and proper-ties of critical, generated defect in high power Sic bipolar devices. This is identified as a stacking fault in the Sic basal plane, using mainly white beam synchrotron Xray topography. The stacking fault is both optically and electrically active, by forming extended local potential reduction of the conduction band.

Keywords
carrier lifetime, defects, dislocations, stacking faults
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-48795 (URN)
Conference
ICSCRM2001
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22
Hallen, A., Janson, M., Kuznetsov, A., Aberg, D., Linnarsson, M., Svensson, B., . . . Zhang, Y. (2002). Ion implantation of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186(1-4), 186-194
Open this publication in new window or tab >>Ion implantation of silicon carbide
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2002 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 186, no 1-4, p. 186-194Article in journal (Refereed) Published
Abstract [en]

Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses. © 2002 Elsevier Science B.V. All rights reserved.

Keywords
Annealing, Damage, Dislocation loops, Dose rate, Point defects
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-47150 (URN)10.1016/S0168-583X(01)00880-1 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13
Magnusson, B., Ellison, A., Carlsson, F., Nguyen, T. S. & Janzén, E. (2001). As-grown and process-induced intrinsic deep-level luminescence in 4H SiC. In: Materials Science Forum, Vols. 353-356: . Paper presented at ECSCRM2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany (pp. 365-368). Trans Tech Publications Inc., 353-356
Open this publication in new window or tab >>As-grown and process-induced intrinsic deep-level luminescence in 4H SiC
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2001 (English)In: Materials Science Forum, Vols. 353-356, Trans Tech Publications Inc., 2001, Vol. 353-356, p. 365-368Conference paper, Published paper (Refereed)
Abstract [en]

A deep level in 4H SiC is studied by photoluminescence (PL) for different annealing temperatures. The luminescence consists of four no-phonon lines between 1.09 and 1.15 eV and their phonon assisted spectra. No splitting or shifting of the lines could be observed in a magnetic field up to 5T. The defect can be introduced in the material by either ion implantation or irradiation, but may also be present in as-grown samples. The PL intensity increases with annealing up to 1000 degreesC, thereafter decreases and vanishes at 1300 degreesC. We tentatively ascribe this deep level defect to a silicon vacancy related complex.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2001
Series
Materials Science Forum, ISSN 1662-9752 ; 353-356
Keywords
annealing, deep levels, ion implantation, irradiation, photoluminescence, Zeeman effect
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-49267 (URN)10.4028/www.scientific.net/MSF.353-356.365 (DOI)0878498737 (ISBN)
Conference
ECSCRM2000: 3rd European Conference on Silicon Carbide and Related Materials, 3-7 September 2000, Kloster Banz, Germany
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-05-07
Bergman, P., Storasta, L., Carlsson, F., Sridhara, S., Magnusson, B. & Janzén, E. (2001). Defects in 4H silicon carbide. In: Physica B, Vols. 308-310: . Paper presented at ICDS-21: 21st International Conference on Defects in Semiconductors, 16-20 July 2001, Giessen, Germany (pp. 675-679). , 308-310
Open this publication in new window or tab >>Defects in 4H silicon carbide
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2001 (English)In: Physica B, Vols. 308-310, 2001, Vol. 308-310, p. 675-679Conference paper, Published paper (Refereed)
Abstract [en]

We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects. This includes the so-called D1 defect which is created after irradiation and which is temperature stable. From the optical measurements we were able to identify the D1 bound exciton as an isoelectronic defect bound at a hole attractive pseudo-donor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). Finally, we describe the formation and properties of a critical, generated defect in high power SiC bipolar devices. It is identified as a stacking fault in the SiC basal plane. It can be seen as a local reduction of the carrier lifetime, in triangular or rectangular shape, which explains the enhanced forward voltage drop in the diodes. The entire stacking faults are also optically active as can be seen as dark triangles and rectangles in low temperature cathodo-luminescence, and the fault and their bounding partial dislocations are seen and identified using synchrotron topography. © 2001 Elsevier Science B.V. All rights reserved.

Keywords
Defects, SiC, Stacking faults
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-47213 (URN)10.1016/S0921-4526(01)00790-6 (DOI)
Conference
ICDS-21: 21st International Conference on Defects in Semiconductors, 16-20 July 2001, Giessen, Germany
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-06-17
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