The influence of heavy atom incorporation (in this case, tungsten, W) into scandium nitride is examined to assess its impact on the electronic structure and associated thermoelectric properties. Incorporating W, with its 5d valence electrons, is expected to shift the Fermi level into the conduction band. A solid solution of Sc1−x​Wx​Ny​ system is also expected to form as ScN exhibits the largest unit cell among the early 3d transition metal nitrides. However, phase separation is initiated at x = 0.10 and results in Sc- and W-rich regions occurring through conventional nucleation and growth. High-temperature nitrogen substoichiometry (at ∼800 °C) and formation of secondary phase is governed by inducing N vacancies in the crystal system. The N/W ratio alters the occupancy of the nonbonding t2g states in the valence band and results in phase instability. The Sc1−x​Wx​Ny​ system is found to be less covalent than a ScN reference sample indicating the presence of ionic and metallic bonds as observed through spectroscopic studies. A unique combination of a metal-like Seebeck coefficient with increased electrical resistivity is found for the Sc1−x​Wx​Ny​ system compared to the ScN reference. This study aims to elucidate the structural, microstructural, and electronic properties of the Sc1-xWxNy system and establishing a correlation with thermoelectric properties, through a combined experimental and theoretical approach.

Achieving large two-dimensional (2D) sheets of any metal is challenging due to their tendency to coalescence or cluster into 3D shapes. Recently, single-atom-thick gold sheets, termed goldene, was reported. Here, we ask if goldene can be extended to include multiple layers. The answer is yes, and trilayer goldene is the magic number, for reasons of electronegativity. Experiments are made to synthesize the atomically laminated phase Ti4Au3C3 through substitutional intercalation of Si layers in Ti4SiC3 for Au. Density functional theory calculations suggest that it is energetically favorable to insert three layers of Au into Ti4SiC3, compared to inserting a monolayer, a bilayer, or more than three layers. Isolated trilayer goldene sheets, ~100 nanometers wide and 6.7 angstroms thick, were obtained by chemically etching the Ti4C3 layers from Ti4Au3C3 templates. Furthermore, trilayer goldene is found in both hcp and fcc forms, where the hcp is ~50 milli–electron volts per atom more stable at room temperature from ab initio molecular dynamic simulations.

Exploiting low-cost, highly active, and robust oxygen evolution reaction (OER) electrocatalysts based on earth-abundant elements by a simple synthesis approach holds paramount importance for green hydrogen production through water electrolysis. In this work, the NiO, Co3O4 and NiCo2O4 nanoparticle layers with identical surface morphologies are prepared under same deposition conditions by a simple spray pyrolysis method and their OER activities are comparatively investigated. Among all these three electrocatalysts, NiCo2O4 shows the lowest overpotential of 420 mV to drive benchmark current density of 10 mA cm(-2) and the smallest Tafel slope (84.1 mV dec(-1)), which are comparable to the OER performance of the benchmark commercial RuO2 electrocatalyst. The high OER activity of NiCo2O4 is attributed to the synergy effect and the modulation of electronic properties between Co and Ni atoms, which drastically reduces the overpotential required to drive OER activities. Therefore, it is believed that the NiCo2O4 synthesized by this simple method would be a competitive candidate as an industrial electrocatalyst with high-efficiency and low cost for large-scale green hydrogen production via water electrolysis.

High-entropy materials, an exciting new class of structural materials involvingfive or more elements, are emerging as unexplored ground forsuperconductors. Here, the effects of nitrogen stoichiometry are investigatedon local chemical structure of TiZrNbTa-based thin films by variousX-ray-based techniques. Lattice distortion and short-range order of a set ofTiZrNbTaNxsamples, including bond lengths of different atomic pairs andcoordination numbers of substituting atoms are quantitatively studied. Themaximum superconducting transition temperature Tcis found at 10 K for anear-stoichiometric (TiZrNbTa)N1.08film, which is>8 K measured for ametallic TiZrNbTa film. The underlying electronic structure and chemicalbonding in these high entropy nitrides thus influence the superconductingmacroscopic properties.

The synthesis of monolayer gold has so far been limited to free-standingseveral-atoms-thick layers, or monolayers confned on or inside templates.Here we report the exfoliation of single-atom-thick gold achieved throughwet-chemically etching away Ti3C2 from nanolaminated Ti3AuC2, initiallyformed by substituting Si in Ti3SiC2 with Au. Ti3SiC2 is a renown MAX phase,where M is a transition metal, A is a group A element, and X is C or N. Ourdeveloped synthetic route is by a facile, scalable and hydrofuoric acid-freemethod. The two-dimensional layers are termed goldene. Goldene layerswith roughly 9% lattice contraction compared to bulk gold are observedby electron microscopy. While ab initio molecular dynamics simulationsshow that two-dimensional goldene is inherently stable, experiments showsome curling and agglomeration, which can be mitigated by surfactants.X-ray photoelectron spectroscopy reveals an Au 4f binding energy increaseof 0.88 eV. Prospects for preparing goldene from other non-van der WaalsAu-intercalated phases, including developing etching schemes,are presented.

Titanium tungsten carbide (TiWC) coatings are deposited by a combined high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) technique. No external heating is applied during deposition phase, instead, the thermally driven adatom mobility is substituted by heavy ion irradiation. DCMS sources equipped with titanium carbide targets provide constant neutral fluxes to establish the predominant coating structures, whereas tungsten carbide target in HiPIMS mode serves as the source of heavy metal-ions. Substrate bias of −60 V is synchronized to W+ ion-rich time domains of HiPIMS pulses to minimize the contribution from working gas ions. The influence of W+ ion flux intensity, controlled by varying peak target current density (JT), on film properties is investigated. X-ray photoelectron spectroscopy reveals the presence of over stoichiometric carbon forming an amorphous phase, the amount of which can be fine-tuned by varying JT. Changes in film composition as a function of JT are explained based on the in-situ ion mass spectroscopy analyses. Dense TiWC coatings by hybrid process exhibit hardness higher than 30 GPa, which are comparable to TiWC films deposited by DCMS with dc substrate bias and external heating. The relative energy consumption in the hybrid process is reduced by 77 % as compared to high-temperature DCMS processing.

Traditional age hardening mechanisms in refractory ceramics consist of precipitation of fine particles. These processes are vital for widespread wear-resistant coating applications. Here, we report novel Guinier-Preston zone hardening, previously only known to operate in soft light-metal alloys, taking place in refractory ceramics like multicomponent nitrides. The added superhardening, discovered in thin films of Ti-Al-W-N upon high temperature annealing, comes from the formation of atomic-plane-thick W disks populating {111} planes of the cubic matrix, as observed by atomically resolved high resolution scanning transmission electron microscopy and corroborated by ab initio calculations and molecular dynamics simulations. Guinier-Preston zone hardening concurrent with spinodal decomposition is projected to exist in a range of other ceramic solid solutions and thus provides a new approach for the development of advanced materials with outstanding mechanical properties and higher operational temperature range for the future demanding applications.

A combined high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) technique is used to deposit Ti0.6Al0.32Si0.08N films with 1-fold substrate table rotation. Layers are grown at two different substrate-target separations, two different rotational speeds, and with different values of substrate bias. The aim is to study the role of (1) overlap between ion and neutral fluxes generated from HiPIMS and DCMS sources, respectively, and (2) the subplantation range of low-mass ions. Results from X-ray diffractometry highlight the necessity of flux intermixing in the formation of the metastable B1-structured TiAlSiN solid solutions. All films grown at short target-to-substrate distance contain the hexagonal AlN phase, as there is essentially no overlap between HiPIMS and DCMS fluxes, thus the Al+ and Si+ subplantation is very limited. Under conditions of high flux intermixing corresponding to larger target-to-substrate distance, no w-AlN forms irrespective of rotational speed (1 or 3 rpm) and bias amplitude (120 or 480 V), indicating that the role of Al+/Si+ and Ti flux overlap is crucial for the phase formation during film growth by HiPIMS/DCMS with substrate rotation. This conclusion is further supported by the fact that the reduction of the bilayer thickness with increasing the target-to-substrate distance (hence increasing flux overlap) is larger for films grown with higher amplitude of the substrate bias, indicative of more efficient Al+/Si+ subplantation into the c-TiN phase. Single-phase films with the hardness close to that of layers grown with stationary substrate table can be achieved, however, at the expense of higher compressive stress.

The optical contrast and minimum layer thickness of Ni/Ti broadband neutron multilayer supermirrors is usually hampered by an interface width, typically 0.7 nm, caused by nanocrystallites, interdiffusion, and/or intermixing. We explore the elimination of nanocrystallites in combination with interface smoothening by modulation of ion assistance during magnetron sputter deposition of 0.8 to 6.4 nm thick Ni and Ti layers. The amorphization is achieved through incorporation of natural B₄C where B and C preferably bond to Ti. A two-stage substrate bias was applied to each layer; -30 V for the initial 1 nm followed by -100 V for the remaining part, generating multilayer mirrors with interface widths of 0.40-0.45 nm. The results predict that high performance supermirrors with m-values as high as 10 are feasible by using ¹¹B isotope-enriched B₄C combined with temporal control of the ion assistance.

Chromium-based nitrides are used in hard, resilient coatings and show promise for thermoelectric applications due to their combination of structural, thermal, and electronic properties. Here, we investigate the electronic structures and chemical bonding correlated to the thermoelectric properties of epitaxially grown chromium-based multicomponent nitride Cr(Mo,V)Nx thin films. The small amount of N vacancies causes Cr 3d and N 2p states to appear at the Fermi level and reduces the band gap in Cr0.51N0.49. Incorporating holes by alloying of V in N-deficient CrN results in an enhanced thermoelectric power factor with marginal change in the charge transfer of Cr to N compared with Cr0.51N0.49. Further alloying of Mo, isoelectronic to Cr, increases the density of states at the Fermi level due to hybridization of the (Cr, V) 3d and Mo 4d-N 2p states in Cr(Mo,V)Nx. This hybridization and N off-stoichiometry result in more metal-like electrical resistivity and reduction in Seebeck coefficient. The N deficiency in Cr(Mo,V)Nx also depicts a critical role in reduction of the charge transfer from metal to N site compared with Cr0.51N0.49 and Cr0.50V0.03N0.47. In this paper, we envisage ways for enhancing thermoelectric properties through electronic band engineering by alloying and competing effects of N vacancies.