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Yang, Li Li
Publications (2 of 2) Show all publications
Yang, L. L., Zhao, Q., Israr, M. Q., Sadaf, J. R., Willander, M., Pozina, G. & Yang, J. H. (2010). Indirect optical transition due to surface band bending in ZnO nanotubes. Journal of Applied Physics, 108(10)
Open this publication in new window or tab >>Indirect optical transition due to surface band bending in ZnO nanotubes
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2010 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 108, no 10Article in journal (Refereed) Published
Abstract [en]

ZnO nanotubes (ZNTs) have been successfully evolved from ZnO nanorods (ZNRs) by a simple chemical etching process. Two peaks located at 382 nm and 384 nm in the UV emission region has been observed in the room temperature photoluminescence (PL) spectrum of ZNTs since the surface band bending in ZNTs induces the coexistence of indirect and direct transitions in their emission process. In addition, a strong enhancement of total luminescence intensity at room temperature in ZNTs has also be observed in comparison with that of ZNRs. Both temperature-dependent PL and time-resolved PL results not only further testify the coexistence of indirect and direct transitions due to the surface band bending, but also reveal that less nonradiative contribution to the emission process in ZNTs finally causes their stronger luminescence intensity.

Place, publisher, year, edition, pages
American Institute, 2010
Keywords
Zinc Oxide, Nanotube, Surface band bending, Indirect transition, Temperature-dependent photoluminescence
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-60853 (URN)10.1063/1.3511345 (DOI)000285005000053 ()
Note
Original Publication: Li Li Yang, Qingxiang Zhao, Muhammad Qadir Israr, Jamil Rana Sadaf, Magnus Willander, Galia Pozina and J. H. Yang, Indirect optical transition due to surface band bending in ZnO nanotubes, 2010, Journal of Applied Physics, (108), 10, 103513. http://dx.doi.org/10.1063/1.3511345 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2010-10-28 Created: 2010-10-28 Last updated: 2017-12-12
Yang, L. L., Zhao, Q., Xing, G. Z., Wang, D. D., Wu, T., Willander, M., . . . Yang, J. H.Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by MOCVD.
Open this publication in new window or tab >>Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by MOCVD
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

Zn0.94Mg0.06O/ZnO heterostructures were grown on 2 inch sapphire wafer by MOCVD equipment. Photoluminescence mapping demonstrated that Mg uniformly distributed on the entire wafer with average concentration of ~6%. The annealing effects on the Mg diffusion behaviors were investigated by secondary ion mass spectrometry (SIMS). All Mg SIMS depth profiles were fitted by three Gaussian distribution functions. The Mg diffusion coefficient in the as-grown Zn0.94Mg0.06O layer deposited at 700 oC was two order of magnitude lower than that of annealed samples, which indicated that the deposition temperature of 700 oC is much more beneficial to grow ZnMgO/ZnO heterostructures or quantum wells.

National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-60854 (URN)
Available from: 2010-10-28 Created: 2010-10-28 Last updated: 2014-01-15
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