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Liljedahl, Rickard
Alternative names
Publications (10 of 25) Show all publications
Jokubavicius, V., Yazdi, G. R., Liljedahl, R., Ivanov, I. G., Sun, J., Liu, X., . . . Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15(6), 2940-2947
Open this publication in new window or tab >>Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
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2015 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 15, no 6, p. 2940-2947Article in journal (Refereed) Published
Abstract [en]

We investigated the formation of structural defects in thick (∼1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the two-step growth process combined with a geometrically controlled lateral enlargement mechanism allows the formation of a single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution X-ray diffraction and low temperature photoluminescence measurements.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2015
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-118525 (URN)10.1021/acs.cgd.5b00368 (DOI)000355890400051 ()
Note

Swedish Energy Agency; Swedish Research Council; Swedish Governmental Agency for Innovation Systems (Vinnova)

Available from: 2015-05-29 Created: 2015-05-29 Last updated: 2017-12-04
Ou, H., Ou, Y., Argyraki, A., Schimmel, S., Kaiser, M., Wellmann, P., . . . Syväjärvi, M. (2014). Advances in wide bandgap SiC for optoelectronics. European Physical Journal B: Condensed Matter Physics, 87, 58
Open this publication in new window or tab >>Advances in wide bandgap SiC for optoelectronics
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2014 (English)In: European Physical Journal B: Condensed Matter Physics, ISSN 1434-6028, E-ISSN 1434-6036, Vol. 87, p. 58-Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

Place, publisher, year, edition, pages
Springer Berlin/Heidelberg, 2014
Keywords
Colloquium
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-105175 (URN)10.1140/epjb/e2014-41100-0 (DOI)000332697900001 ()
Available from: 2014-03-11 Created: 2014-03-11 Last updated: 2017-12-05Bibliographically approved
Ivanov, I. G., Yazdanfar, M., Lundqvist, B., Chen, J.-T., ul-Hassan, J., Stenberg, P., . . . Janzén, E. (2014). High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC. In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2: . Paper presented at 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan (pp. 471-474). Trans Tech Publications Inc., 778-780
Open this publication in new window or tab >>High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
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2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, p. 471-474Conference paper, Published paper (Refereed)
Abstract [en]

The optical properties of isotope-pure (SiC)-Si-28-C-12, natural SiC and enriched with C-13 isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Gamma point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-controlled Si is presented.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keywords
isotope-pure SiC; isotope-enriched SiC; Raman spectroscopy; photoluminescence; bandgap variation with isotope content
National Category
Ceramics
Identifiers
urn:nbn:se:liu:diva-108198 (URN)10.4028/www.scientific.net/MSF.778-780.471 (DOI)000336634100110 ()
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-10-28Bibliographically approved
Jokubavicius, V., Yazdi, G. R., Liljedahl, R., Ivanov, I. G., Yakimova, R. & Syväjärvi, M. (2014). Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 14(12), 6514-6520
Open this publication in new window or tab >>Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
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2014 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 14, no 12, p. 6514-6520Article in journal (Refereed) Published
Abstract [en]

We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral enlargement of 3C-SiC domains along the step-flow direction is outlined. Growth process stability and reproducibility of high crystalline quality material are demonstrated in a series of 3C-SiC samples with a thickness of about 1 mm. The average values of full width at half-maximum of ω rocking curves on these samples vary from 34 to 48 arcsec indicating high crystalline quality compared to values found in the literature. The low temperature photoluminescence measurements also confirm a high crystalline quality of 3C-SiC and indicate that the residual nitrogen concentration is about 1–2 × 1016 cm–3. Such a 3C-SiC growth concept may be applied to produce substrates for homoepitaxial 3C-SiC growth or seeds which could be explored in bulk growth of 3C-SiC.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2014
National Category
Physical Sciences Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-112510 (URN)10.1021/cg501424e (DOI)000345884000043 ()
Available from: 2014-11-29 Created: 2014-11-29 Last updated: 2017-12-05Bibliographically approved
Schimmel, S., Kaiser, M., Jokubavicius, V., Ou, Y., Hens, P., Linnarsson, M. K., . . . Wellmann, P. (2014). The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. Paper presented at EMRS 2013 Spring Meeting, Symposium G. IOP Conference Series: Materials Science and Engineering, 56(1), 012002
Open this publication in new window or tab >>The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
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2014 (English)In: IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, E-ISSN 1757-899X, Vol. 56, no 1, p. 012002-Article in journal (Refereed) Published
Abstract [en]

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2014
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-105858 (URN)10.1088/1757-899X/56/1/012002 (DOI)
Conference
EMRS 2013 Spring Meeting, Symposium G
Available from: 2014-04-10 Created: 2014-04-10 Last updated: 2017-12-05Bibliographically approved
Hens, P., Müller, J., Wagner, G., Liljedahl, R., Spiecker, E. & Syväjärvi, M. (2013). Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation. In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Ed.), Silicon Carbide and Related Materials 2012: . Paper presented at 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia (pp. 283-286). Trans Tech Publications, 740-742
Open this publication in new window or tab >>Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, p. 283-286Conference paper, Published paper (Refereed)
Abstract [en]

In this paper we present an investigation on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star-defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star-defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.

Place, publisher, year, edition, pages
Trans Tech Publications, 2013
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keywords
3C-SiC, AFM, Defects, Homoepitaxy, Sublimation, TEM, X-Ray Diffraction (XRD)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-96510 (URN)10.4028/www.scientific.net/MSF.740-742.283 (DOI)000319785500067 ()978-3-03785-624-6 (ISBN)
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2013-08-29Bibliographically approved
Linnarsson, M., Kaiser, M., Liljedahl, R., Jokubavicius, V., Ou, Y., Wellmann, P., . . . Syväjärvi, M. (2013). Lateral Boron Distribution in Polycrystalline SiC Source Materials. In: : . Paper presented at 9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia (pp. 397-400). Scientific.Net
Open this publication in new window or tab >>Lateral Boron Distribution in Polycrystalline SiC Source Materials
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2013 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

Place, publisher, year, edition, pages
Scientific.Net, 2013
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-87899 (URN)10.4028/www.scientific.net/MSF.740-742.397 (DOI)000319785500093 ()
Conference
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia
Available from: 2013-01-27 Created: 2013-01-27 Last updated: 2017-11-07
Sun, J., Kamiyama, S., Wellmann, P., Liljedahl, R., Yakimova, R. & Syväjärvi, M. (2013). Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy. In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Ed.), Silicon Carbide and Related Materials 2012: . Paper presented at 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia (pp. 315-318). Trans Tech Publications, 740-742
Open this publication in new window or tab >>Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, p. 315-318Conference paper, Published paper (Refereed)
Abstract [en]

High quality bulk-like 3C-SiC were grown on on-axis (0001) 6H-SiC substrate by sublimation epitaxy. The microwave photoconductivity decay mapping measurements revealed that this material shows considerable long carrier lifetimes varied from 3.519 to 7.834 mu s under the injection level of 3.5x10(12) cm(-2), which are comparable with the best carrier lifetimes in 4H-SiC layers. The mapping of high resolution x-ray diffraction obtained from the same region shows that smaller carrier lifetimes seem to correspond to the larger FWHM values and vice versa. This shows that long carrier lifetime obtained in 3C-SiC is due to the improvement of the crystal quality.

Place, publisher, year, edition, pages
Trans Tech Publications, 2013
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keywords
3C-SiC, Carrier Lifetime, High Resolution X-Ray Diffraction (HR-XRD)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-96511 (URN)10.4028/www.scientific.net/MSF.740-742.315 (DOI)000319785500074 ()978-3-03785-624-6 (ISBN)
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2013-08-29Bibliographically approved
Jokubavicius, V., Kaiser, M., Hens, P., Wellmann, P., Liljedahl, R., Yakimova, R. & Syväjärvi, M. (2013). Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates. Paper presented at 9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia. Materials Science Forum, 740-742, 19-22
Open this publication in new window or tab >>Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
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2013 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, p. 19-22Article in journal (Refereed) Published
Abstract [en]

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013
Keywords
Fluoresecnt Silicon Carbide, Low Off-Axis Substrates, Sublimation Epitaxy
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-88724 (URN)10.4028/www.scientific.net/MSF.740-742.19 (DOI)000319785500005 ()
Conference
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia
Available from: 2013-02-14 Created: 2013-02-14 Last updated: 2017-12-06
Jokubavicius, V., Kaiser, M., Hens, P., Wellmann, P., Liljedahl, R., Yakimova, R. & Syväjärvi, M. (2013). Morphological and optical stability in growth of fluorescent SiCon low off-axis substrates. Paper presented at 9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia.
Open this publication in new window or tab >>Morphological and optical stability in growth of fluorescent SiCon low off-axis substrates
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2013 (English)Conference paper, Published paper (Other academic)
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-87897 (URN)
Conference
9th European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), 2-6 September 2012, Saint-Petersburg, Russia
Available from: 2013-01-27 Created: 2013-01-27 Last updated: 2013-02-11
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