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Cubarovs, Mihails
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Publications (3 of 3) Show all publications
Chubarov, M., Pedersen, H., Högberg, H., Jensen, J. & Henry, A. (2012). Growth of High Quality Epitaxial Rhombohedral Boron Nitride. Crystal Growth & Design, 12(6), 3215-3220
Open this publication in new window or tab >>Growth of High Quality Epitaxial Rhombohedral Boron Nitride
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2012 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 12, no 6, p. 3215-3220Article in journal (Refereed) Published
Abstract [en]

Epitaxial growth of sp(2)-hybridized boron nitride (sp(2) BN) films on sapphire substrates is demonstrated in a hot wall chemical vapor deposition reactor at the temperature of 1500 degrees C, using triethyl boron and ammonia as precursors. The influence of the main important process parameters, temperature, N/B ratio, B/H-2 ratio, and carrier gas composition on the quality of the grown layers is investigated in detail. X-ray diffraction shows that epitaxial rhombohedral BN (r-BN) film can be deposited only in a narrow process parameter window; outside this window either turbostratic-BN or amorphous BN is favored if BN is formed. In addition, a thin strained AlN buffer layer is needed to support epitaxial growth of r-BN film on sapphire since only turbostratic BN is formed on sapphire substrate. The quality of the grown film is also affected by the B/H-2 ratio as seen from a change of the spacing between the basal planes as revealed by X-ray diffraction. Time-of-flight elastic recoil detection analysis shows an enhancement of the C and O impurities incorporation at lower growth temperatures. The gas phase chemistry for the deposition is discussed as well as the impact of the growth rate on the quality of the BN film.

Place, publisher, year, edition, pages
American Chemical Society, 2012
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-79095 (URN)10.1021/cg300364y (DOI)000304838000062 ()
Note

Funding Agencies|Swedish Research Council|VR 621-2009-5264VR 622-2008-1247|

Available from: 2012-06-29 Created: 2012-06-29 Last updated: 2017-12-07
Pedersen, H., Chubarov, M., Högberg, H., Jensen, J. & Henry, A. (2012). On the effect of water and oxygen in chemical vapor deposition of boron nitride. Thin Solid Films, 520(18), 5889-5893
Open this publication in new window or tab >>On the effect of water and oxygen in chemical vapor deposition of boron nitride
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2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 18, p. 5889-5893Article in journal (Refereed) Published
Abstract [en]

Growth studies of sp(2)-hybridized boron nitride (BN) phases by thermal chemical vapor deposition (CVD) are presented; of particular interest is the presence of oxygen and water during growth. While Fourier transform infrared spectroscopy reveals the presence of B-N bonds and elemental analysis by elastic recoil detection analysis shows that the films are close to stoichiometric, although containing a few atomic percent oxygen and hydrogen, X-ray diffraction measurements show no indications for nucleation of any crystalline BN phases, despite change in N/B-ratio and/or process temperature. Thermodynamic modeling suggests that this is due to formation of strong B-O bonds already in the gas phase in the presence of water or oxygen during growth. This growth behavior is believed to be caused by an uncontrolled release of water and/or oxygen in the deposition chamber and highlights the sensitivity of the BN CVD process towards oxygen and water.

Place, publisher, year, edition, pages
Elsevier, 2012
Keywords
Boron nitride; Chemical vapor deposition; Water; Oxygen
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-79682 (URN)10.1016/j.tsf.2012.05.004 (DOI)000306104100009 ()
Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2017-12-07
Cubarovs, M., Pedersen, H., Högberg, H., Darakchieva, V., Jens, J., Persson, P. & Henry, A. (2011). Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layer. Physica Status Solidi. Rapid Research Letters, 5(10-11), 397-399
Open this publication in new window or tab >>Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layer
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2011 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 5, no 10-11, p. 397-399Article in journal (Refereed) Published
Abstract [en]

Epitaxial growth of sp2-hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X-ray diffraction measurements in Bragg–Brentano configuration, pole figure measurements and transmission electron microscopy. The in-plane stretching vibration of sp2-hybridized BN is observed at 1366 cm–1 from Raman spectroscopy. Time-of-flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2011
Keywords
chemical vapor deposition;BN;epitaxy;X-ray diffraction
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-73160 (URN)10.1002/pssr.201105410 (DOI)000297747600014 ()
Available from: 2011-12-19 Created: 2011-12-19 Last updated: 2017-12-08
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