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Eriksson, Martin
Alternative names
Publications (10 of 16) Show all publications
Sadollah Khani, A., Nour, O., Willander, M., Kazeminezhad, I., Khranovskyy, V., Eriksson, M. O., . . . Holtz, P.-O. (2015). A detailed optical investigation of ZnO@ZnS core-shell nanoparticles and their photocatalytic activity at different pH values. Ceramics International, 41(5), 7174-7184
Open this publication in new window or tab >>A detailed optical investigation of ZnO@ZnS core-shell nanoparticles and their photocatalytic activity at different pH values
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2015 (English)In: Ceramics International, ISSN 0272-8842, E-ISSN 1873-3956, Vol. 41, no 5, p. 7174-7184Article in journal (Refereed) Published
Abstract [en]

In this study zinc oxide nanoparticles (NPs) were synthesized via a co-precipitation method and were covered by zinc sulfate using a chemical approach at a temperature of 60 degrees C forming ZnO@ZnS core-shell nanoparticles (CSNPs). In order to investigate the effect of the shell thickness on the optical and photocatalytic properties, many samples were grown with different concentration of the sulfur source. The results show that, covering ZnO with ZnS leads to form a type II band alignment system. In addition, the band gap of the ZnO@ZnS CSNPs was found less than both of the core and the shell materials. Also the emission peak intensity of the ZnO NPs changes as a result of manipulating oxygen vacancies via covering. The photocatalytic activity of the ZnO@ZnS CSNPs was invpstigated for degradation of the Congo red dye. As dye pollutants can be found in mediums with different pH, the experiments were performed at three pH values to determine the best photocatalyst for each pH. Congo red dye degradation experiments indicate that the ZnO@ZnS CSNPs act more efficiently as a photcatalyst at pH values of 4 and 7 compare to the pure ZnO NPs.

Place, publisher, year, edition, pages
Elsevier, 2015
Keywords
A. Chemical preparation; B. Spectroscopy; C. Optical properties; D. ZnO
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-118021 (URN)10.1016/j.ceramint.2015.02.040 (DOI)000353176400070 ()
Note

Funding Agencies|Shahid Chamran University; Linkoping University; Linkoping Linne Initiative

Available from: 2015-05-21 Created: 2015-05-20 Last updated: 2018-02-13
Sodzel, D., Khranovskyy, V., Beni, V., Turner, A. P., Viter, R., Eriksson, M. O., . . . Yakimova, R. (2015). Control of hydrogen peroxide and glucose via UV and Visible Photoluminescence of ZnO nanoparticles.. Microchimica Acta, 182(9-10), 1819-1826
Open this publication in new window or tab >>Control of hydrogen peroxide and glucose via UV and Visible Photoluminescence of ZnO nanoparticles.
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2015 (English)In: Microchimica Acta, ISSN 0026-3672, E-ISSN 1436-5073, Vol. 182, no 9-10, p. 1819-1826Article in journal (Refereed) Published
Abstract [en]

We report on an indirect optical method for the determination of glucose via the detection of hydrogen peroxide (H2O2) that is generated during the glucose oxidase (GOx) catalyzed oxidation of glucose. It is based on the finding that the ultraviolet (~374 nm) and visible (~525 nm) photoluminescence of pristine zinc oxide (ZnO) nanoparticles strongly depends on the concentration of H2O2 in water solution. Photoluminescence is quenched by up to 90 % at a 100 mM level of H2O2. The sensor constructed by immobilizing GOx on ZnO nanoparticles enabled glucose to be continuously monitored in the 10 mM to 130 mM concentration range, and the limit of detection is 10 mM. This enzymatic sensing scheme is supposed to be applicable to monitoring glucose in the food, beverage and fermentation industries. It has a wide scope in that it may be extended to numerous other substrate or enzyme activity assays based on the formation of H2O2, and of assays based on the consumption of H2O2 by peroxidases.

Place, publisher, year, edition, pages
Springer Netherlands, 2015
National Category
Materials Chemistry
Identifiers
urn:nbn:se:liu:diva-118305 (URN)10.1007/s00604-015-1493-9 (DOI)000356449700030 ()
Available from: 2015-05-26 Created: 2015-05-26 Last updated: 2017-12-04
Khranovskyy, V., Eriksson, M. O., Radnóczi, G. Z., Khalid, A., Zhang, H., Holtz, P.-O., . . . Yakimova, R. (2014). Correction: Photoluminescence study of basal plane stacking faults in ZnO nanowires (vol 4639, pg 50, 2014). Physica. B, Condensed matter, 454, 279-279
Open this publication in new window or tab >>Correction: Photoluminescence study of basal plane stacking faults in ZnO nanowires (vol 4639, pg 50, 2014)
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2014 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 454, p. 279-279Article in journal (Other academic) Published
Abstract [en]

n/a

Place, publisher, year, edition, pages
Elsevier, 2014
National Category
Chemical Sciences Physical Sciences
Identifiers
urn:nbn:se:liu:diva-112032 (URN)10.1016/j.physb.2014.08.001 (DOI)000342682100045 ()
Available from: 2014-11-17 Created: 2014-11-13 Last updated: 2017-12-05Bibliographically approved
Khranovskyy, V., Tsiaoussis, I., Eriksson, M. & Yakimova, R. (2014). Effect of Ag doping on the microstructure and photoluminescence of ZnO nanostructures. Physica Status Solidi (a) applications and materials science, 211(9), 2109-2114
Open this publication in new window or tab >>Effect of Ag doping on the microstructure and photoluminescence of ZnO nanostructures
2014 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 211, no 9, p. 2109-2114Article in journal (Refereed) Published
Abstract [en]

ZnO nanostructures were obtained by metal-organic chemical vapor deposition via Ag catalyst-assisted growth in a temperature range of 200-500 degrees C. Growth at temperatures above 500 degrees C resulted in vertically aligned ZnO nanorods (NLs). Ag incorporation into ZnO up to 0.4 at.% promoted creation of basal plane stacking fault (BSF) defects and corrugation of the side facets of the NLs. The presence of BSFs give rise to an additional photoluminescence peak with a wavelength of similar to 386 nm, which is slightly red-shifted compared to the commonly observed NBE emission at similar to 375 nm. The observed emission was found to be specifically observed from the side facets of the NLs. It is suggested that this emission is due to a high concentration of BSFs in the ZnO as a result of an incorporation of Ag as acceptor dopant. [GRAPHICS] SEM image of an Ag-doped ZnO nanorod with corrugated side facets. The observed corrugation is accompanied by a high concentration of basal plane stacking faults.

Place, publisher, year, edition, pages
Wiley-VCH Verlag, 2014
Keywords
Ag doping; corrugated surface; p-type ZnO; stacking faults
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-111464 (URN)10.1002/pssa.201400008 (DOI)000341988400026 ()
Note

Funding Agencies|Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM)

Available from: 2014-10-21 Created: 2014-10-17 Last updated: 2017-12-05
Amloy, S., Karlsson, K. F., Eriksson, M. O., Palisaitis, J., Persson, P. O. Å., Chen, Y. T., . . . Holtz, P.-O. (2014). Excitons and biexcitons in InGaN quantum dot like localization centers. Nanotechnology, 25(49), 495702
Open this publication in new window or tab >>Excitons and biexcitons in InGaN quantum dot like localization centers
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2014 (English)In: Nanotechnology, ISSN 0957-4484, Vol. 25, no 49, p. 495702-Article in journal (Refereed) Published
Abstract [en]

Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV. 

Place, publisher, year, edition, pages
IOP Publishing, 2014
National Category
Physical Sciences Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-113334 (URN)10.1088/0957-4484/25/49/495702 (DOI)000345603800018 ()25410551 (PubMedID)
Available from: 2015-01-16 Created: 2015-01-16 Last updated: 2018-03-08
Urgessa, Z. N., Botha, J. R., Eriksson, M. O., Mbulanga, C. M., Dobson, S. R., Tankio Djiokap, S. R., . . . Holtz, P.-O. (2014). Low temperature near band edge recombination dynamics in ZnO nanorods. Journal of Applied Physics, 116(12), 123506
Open this publication in new window or tab >>Low temperature near band edge recombination dynamics in ZnO nanorods
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 12, p. 123506-Article in journal (Refereed) Published
Abstract [en]

The recombination dynamics of neutral donor bound excitons ((DX)-X-o: I-4, I-6/6a) and near band edge defect-related emission in solution grown ZnO nanorods are investigated using steady state and time-resolved photoluminescence (PL) measurements. The effects of annealing are also studied. Low temperature steady state PL shows a systematic removal of the I-4 line after annealing at 450 degrees C and the subsequent domination of I-6a in these PL spectra. Additionally, the time decay of the I-4, I-6/6a, free exciton (FX), and basal plane stacking fault-related (BSF) PL transitions are studied as a function of annealing temperature. For the various annealing temperatures studied, the PL decay is described by a bi-exponential profile with a fast component (contribution from the surface) and slow component (related to bulk recombination). The fast component dominates in the case of as-grown and low temperature annealed samples (anneal temperatures up to 300 degrees C), suggesting the presence of surface adsorbed impurities. For samples annealed above 400 degrees C, the effects of the surface are reduced. The sample annealed at 850 degrees C produced an overall enhancement of the crystal quality. The underlying mechanisms for the observed PL characteristics are discussed based on near surface band bending caused by surface impurities.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-112055 (URN)10.1063/1.4896488 (DOI)000342840000018 ()
Note

Funding Agencies|South Africa Research Chairs Initiative of the Department of Science and Technology; National Research Foundation (NRF), South Africa; Nelson Mandela Metropolitan University (NMMU); Swedish-South Africa research collaboration

Available from: 2014-11-17 Created: 2014-11-13 Last updated: 2017-12-05
Yang, S., Hsu, H. C., Liu, W.-R., Lin, B. H., Kuo, C. C., Hsu, C.-H., . . . Hsieh, W. F. (2014). Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film. Applied Physics Letters, 105(1), 011106
Open this publication in new window or tab >>Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 1, p. 011106-Article in journal (Refereed) Published
Abstract [en]

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-109886 (URN)10.1063/1.4887280 (DOI)000339664900006 ()
Note

Funding Agencies|National Science Council of Taiwan [NSC-99-2112-M-006-017-MY3, NSC-100-2112-M-213-002-MY3, NSC-102-2112-M-006-012-MY3]

Available from: 2014-08-28 Created: 2014-08-28 Last updated: 2017-12-05Bibliographically approved
Ibupoto, Z. H., Khun, K., Eriksson, M., AlSalhi, M., Atif, M., Ansari, A. & Willander, M. (2013). Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles. Materials, 6(8), 3584-3597
Open this publication in new window or tab >>Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles
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2013 (English)In: Materials, ISSN 1996-1944, E-ISSN 1996-1944, Vol. 6, no 8, p. 3584-3597Article in journal (Refereed) Published
Abstract [en]

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Place, publisher, year, edition, pages
MDPI, 2013
Keywords
biocomposite seed layer; ZnO nanorods; hydrothermal growth method; starch; cellulose
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-103818 (URN)10.3390/ma6083584 (DOI)000330293100034 ()
Available from: 2014-01-28 Created: 2014-01-28 Last updated: 2017-12-06Bibliographically approved
Hsu, H.-C., Huang, H.-Y., Eriksson, M., Dai, T.-F. & Holtz, P.-O. (2013). Surface related and intrinsic exciton recombination dynamics in ZnO nanoparticles synthesized by a sol-gel method. Applied Physics Letters, 102(1), 013109
Open this publication in new window or tab >>Surface related and intrinsic exciton recombination dynamics in ZnO nanoparticles synthesized by a sol-gel method
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 1, p. 013109-Article in journal (Refereed) Published
Abstract [en]

ZnO nanoparticles with controlled sizes produced by a sol-gel method are studied by means of time-integrated as well as time-resolved photoluminescence (TRPL) spectroscopy. Room-temperature photoluminescence spectra show a blueshift of the excitonic emission with the decreasing particle size, which is attributed to the quantum confinement effect. The temperature dependence of the exciton lifetimes deduced from the TRPL results contains two components: the fast decay is attributed to surface trapping of exciton and the slow decay is mainly representative of the radiative processes involving the bound or free excitons.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-88665 (URN)10.1063/1.4774002 (DOI)000313646500103 ()
Note

Funding Agencies|National Science Council of Taiwan|NSC-100-2112-M-006-002-MY3|Headquarters of University Advancement at the National Cheng Kung University||Ministry of Education, Taiwan||

Available from: 2013-02-14 Created: 2013-02-14 Last updated: 2017-12-06
Hsu, C.-W., Moskalenko, E., Eriksson, M., Lundskog, A., Karlsson, F. K., Forsberg, U., . . . Holtz, P.-O. (2013). The charged exciton in an InGaN quantum dot on a GaN pyramid. Applied Physics Letters, 103(1)
Open this publication in new window or tab >>The charged exciton in an InGaN quantum dot on a GaN pyramid
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 1Article in journal (Refereed) Published
Abstract [en]

The emission of a charged exciton in an InGaN quantum dot (QD) on top of a GaN pyramid is identified experimentally. The intensity of the charged exciton exhibits the expected competition with that of the single exciton, as observed in temperature-dependent micro-photoluminescence measurements, performed with different excitation energies. The non-zero charge state of this complex is further supported by time resolved micro-photoluminescence measurements, which excludes neutral alternatives of biexciton. The potential fluctuations in the vicinity of the QD that localizes the charge carriers are proposed to be responsible for the unequal supply of electrons and holes into the QD.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-95961 (URN)10.1063/1.4812984 (DOI)000321497200036 ()
Note

Funding Agencies|NANO-N consortium||Swedish Foundation for Strategic Research (SSF)||

Available from: 2013-08-19 Created: 2013-08-12 Last updated: 2017-12-06
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