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Lundqvist, Björn
Publications (3 of 3) Show all publications
Ivanov, I. G., Yazdanfar, M., Lundqvist, B., Chen, J.-T., ul-Hassan, J., Stenberg, P., . . . Janzén, E. (2014). High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC. In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2: . Paper presented at 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan (pp. 471-474). Trans Tech Publications Inc., 778-780
Open this publication in new window or tab >>High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
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2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, p. 471-474Conference paper, Published paper (Refereed)
Abstract [en]

The optical properties of isotope-pure (SiC)-Si-28-C-12, natural SiC and enriched with C-13 isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Gamma point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-controlled Si is presented.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keywords
isotope-pure SiC; isotope-enriched SiC; Raman spectroscopy; photoluminescence; bandgap variation with isotope content
National Category
Ceramics
Identifiers
urn:nbn:se:liu:diva-108198 (URN)10.4028/www.scientific.net/MSF.778-780.471 (DOI)000336634100110 ()
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-10-28Bibliographically approved
Lundqvist, B., Raad, P., Yazdanfar, M., Stenberg, P., Liljedahl, R., Komarov, P., . . . Janzén, E. (2013). Thermal Conductivity of Isotopically Enriched Silicon Carbide. In: Thermal Investigations of ICs and Systems (THERMINIC), 2013: . Paper presented at 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 25-27 September 2013, Berlin, Germany (pp. 58-61). IEEE
Open this publication in new window or tab >>Thermal Conductivity of Isotopically Enriched Silicon Carbide
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2013 (English)In: Thermal Investigations of ICs and Systems (THERMINIC), 2013, IEEE , 2013, p. 58-61Conference paper, Published paper (Refereed)
Abstract [en]

Since the semiconductor silicon carbide presents attractive opportunities for the fabrication of novel electronic devices, there is significant interest in improving its material quality. Shrinking component sizes and high demands for efficiency and reliability make the capability to release excess heat an important factor for further development. Experience from Si and Diamond tells us that isotopic enrichment is a possible way to increase the thermal conductivity. We have produced samples of 4H-SiC that contain Si-28 and C-12 to a purity of 99.5%. The thermal conductivity in the c-direction of these samples has been measured by a transient thermoreflectance method. An improvement due to enrichment of at least 18% was found. The result is valid for a temperature of 45K above room temperature. A preliminary study of the temperature dependence of the thermal conductivity demonstrates a strong temperature dependence in agreement with earlier reports for 4H.

Place, publisher, year, edition, pages
IEEE, 2013
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-106995 (URN)10.1109/THERMINIC.2013.6675243 (DOI)000335321100010 ()978-1-4799-2271-0 (ISBN)
Conference
19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 25-27 September 2013, Berlin, Germany
Available from: 2014-06-03 Created: 2014-06-02 Last updated: 2014-06-11Bibliographically approved
Jokubavicius, V., Lundqvist, B., Hens, P., Liljedahl, R., Yakimova, R., Kamiyama, S. & Syväjärvi, M. (2012). On stabilization of 3C-SiC using low off-axis 6H-SiC substrates. Paper presented at ICSCRM2011. Trans Tech Publications Inc., 717-720
Open this publication in new window or tab >>On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
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2012 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality of 3C-SiC are influenced by the off-orientation of the substrate, the growth temperature (studied temperature range from 1750 oC to 1850oC), and the growth ambient (vacuum at 5*10-5 mbar and nitrogen at 5*10-1 mbar). The largest domains of 3C-SiC and the lowest number of double positioning boundaries were grown using nitrogen ambient and the highest growth temperature. The combined use of low off-axis substrate and high growth rate is a potential method to obtain material with bulk properties.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012
Keywords
3C-SiC, Low Off-Axis 6H-SiC, Sublimation Epitaxy
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-77455 (URN)10.4028/www.scientific.net/MSF.717-720.193 (DOI)000309431000046 ()
Conference
ICSCRM2011
Available from: 2012-05-17 Created: 2012-05-17 Last updated: 2013-01-19
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