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Filippov, Stanislav
Alternative names
Publications (10 of 19) Show all publications
Filippov, S., Jansson, M., Stehr, J. E., Palisaitis, J., Persson, P. O. Å., Ishikawa, F., . . . Buyanova, I. A. (2016). Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires. Nanoscale, 8(35), 15939-15947
Open this publication in new window or tab >>Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires
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2016 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 8, no 35, p. 15939-15947Article in journal (Refereed) Published
Abstract [en]

Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (similar to 50-130 mu eV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

Place, publisher, year, edition, pages
Royal Society of Chemistry, 2016
Keywords
GaNAs, nanowires, core/shell structures, defects, light emission, polarization
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-123938 (URN)10.1039/c6nr05168e (DOI)000382839100014 ()
Note

Funding agencies: Financial support by the Swedish Energy Agency (grant # P40119-1) and the Swedish Research Council (grants # 2015-05532 and 2008-405) is greatly appreciated. The Knut and Alice Wallenberg Foundation is gratefully acknowledged for support of the Electron Microscopy laboratory in Linkoping.

Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2018-04-25Bibliographically approved
Filippov, S., Ishikawa, F., Chen, W. M. & Buyanova, I. (2016). Structural properties of GaNAs nanowires probed by micro-Raman spectroscopy. Semiconductor Science and Technology, 31(2), Article ID 025002.
Open this publication in new window or tab >>Structural properties of GaNAs nanowires probed by micro-Raman spectroscopy
2016 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 31, no 2, article id 025002Article in journal (Refereed) Published
Abstract [en]

GaNAs-based nanowires (NWs) form a novel material system of potential importance for applications in advanced optoelectronic and photonic devices, thanks to the advantages provided by band-structure engineering, one-dimensional architecture and the possibility to combine them with mainstream silicon technology. In this work we utilize the micro-Raman scattering technique to systematically study the structural properties of such GaAs/GaNAs core/shell NW structures grown by molecular beam epitaxy on a Si substrate. It is shown that the employed one-dimensional architecture allows the fabrication of a GaNAs shell with a low degree of alloy disorder and weak residual strain, at least within the studied range of nitrogen (N) compositions [N] < 0.6%. Raman scattering by the GaAs-like and GaN-like phonons is found to be enhanced when the excitation energy approaches the E + transition energy. Since this effect is found to be more pronounced for the GaN-like phonons, the involved intermediate states are concluded to be localized in proximity to N impurities, i.e. they likely represent N-related cluster states located in proximity to E + .

Place, publisher, year, edition, pages
IOP Publishing, 2016
National Category
Physical Sciences Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-123937 (URN)10.1088/0268-1242/31/2/025002 (DOI)000372412900004 ()
Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2017-11-30Bibliographically approved
Filippov, S., Ishikawa, F., Chen, W. & Buyanova, I. (2015). Characterization of GaAs/GaNAs core/shell nanowires by means of Raman scattering spectroscopy. In: Abstract Book: . Paper presented at 2015 EMRS Spring Meeting (pp. IP2.27).
Open this publication in new window or tab >>Characterization of GaAs/GaNAs core/shell nanowires by means of Raman scattering spectroscopy
2015 (English)In: Abstract Book, 2015, p. IP2.27-Conference paper, Poster (with or without abstract) (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-117986 (URN)
Conference
2015 EMRS Spring Meeting
Available from: 2015-05-19 Created: 2015-05-19 Last updated: 2017-03-27
Filippov, S., Puttisong, Y., Huang, Y., Buyanova, I. A., Suraprapapich, S., Tu, C. W. W. & Chen, W. (2015). Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures. ACS Nano, 9(6), 5741-5749
Open this publication in new window or tab >>Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures
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2015 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 9, no 6, p. 5741-5749Article in journal (Refereed) Published
Abstract [en]

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs. This trend is accompanied by a corresponding difference in the optical polarization directions of the excitons between these QMSs, namely, the bright-exciton lines are linearly polarized preferably along or perpendicular to the [11̅0] crystallographic axis in the DQDs that also defines the alignment direction of the two constituting QDs, whereas in the QCs and QRs, the polarization directions are randomly oriented. We attribute the observed trend in the FSS to a significant reduction of the asymmetry in the lateral confinement potential of the excitons in the QRs and QCs as compared with the DQDs, as a result of a compensation between the effects of lateral shape anisotropy and piezoelectric field. Our work demonstrates that FSS strongly depends on the geometric arrangements of the QMSs, which effectively tune the degree of the compensation effects and are capable of reducing FSS even in a strained QD system to a limit similar to strain-free QDs. This approach provides a pathway in obtaining high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures, utilizing an uninterrupted epitaxial growth procedure without special requirements for lattice-matched materials combinations, specific substrate orientations, and nanolithography.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2015
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-118007 (URN)10.1021/acsnano.5b01387 (DOI)000356988500013 ()25965972 (PubMedID)
Available from: 2015-05-20 Created: 2015-05-20 Last updated: 2018-09-05
Filippov, S. (2015). Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures. (Doctoral dissertation). Linköping: Linköping University Electronic Press
Open this publication in new window or tab >>Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. For examples, NWs based on dilute nitride alloys, i.e. GaNAs and GaNP, provide both an optical active medium and well-shaped cavity and, therefore, can be used in a variety of advanced optoelectronic devices including intermediate band solar cells and efficient light-emitters. Self-assembled InAs QDs formed in the GaAs matrix are proposed as building blocks for entangled photon sources for quantum cryptography and quantum information processing as well as for spin light emitting devices. ZnO NWs can be utilized in a variety of applications including efficient UV lasers and gas sensors. In order to fully explore advantages of nanostructured materials, their electronic properties and lattice structure need to be comprehensively characterized and fully understood, which is not yet achieved in the case of aforementioned material systems. The research work presented this thesis addresses a selection of open issues via comprehensive optical characterization of individual nanostructures using micro-Raman ( -Raman) and micro-photoluminescence ( -PL) spectroscopies.

In paper 1 we study polarization properties of individual GaNP and GaP/GaNP core/shell NWs using polarization resolved μ-PL spectroscopy. Near band-edge emission in these structures is found to be strongly polarized (up to 60% at 150K) in the orthogonal direction to the NW axis, in spite of their zinc blende (ZB) structure. This polarization response, which is unusual for ZB NWs, is attributed to the local strain in the vicinity of the N-related centers participating in the radiative recombination and to their preferential alignment along the growth direction, presumably caused by the presence of planar defects. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to control the polarization anisotropy of III-V nanowires, advantageous for their applications as a nanoscale source of polarized light.

Structural and optical properties of novel coaxial GaAs/Ga(N)As NWs grown on Si substrates, were evaluated in papers 2-4. In paper 2 we show by using -Raman spectroscopy that, though nitrogen incorporation shortens a phonon correlation length, the GaNAs shell with [N]<0.6% has a low degree of alloy disorder and weak residual strain. Additionally, Raman scattering by the GaAs-like and GaNlike phonons is found to be enhanced when the excitation energy approaches the E+ transition energy. This effect was attributed the involvement of intermediate states that were created by N-related clusters in proximity to the E+ subband. Recombination processes in these structures were studied in paper 3 by means of μ-PL, μ-PL excitation (μ-PLE), and time-resolved PL spectroscopies. At low temperatures, the alloy disorder is found to localize photo-excited carriers leading to predominance of localized exciton (LE) transitions in the PL spectra. Some of the local fluctuations in N composition are suggested to create three-dimensional confining potentials equivalent to that for QDs, based on the observation of sharp PL lines within the LE contour. In paper 4 we show that the formation of these QD-like confinement potentials is somewhat facilitated in spatial regions of the NWs with a high density of structural defects, based on correlative spatially-resolved structural and optical studies. It is also concluded the principal axis of these QD-like local potentials is mainly oriented along the growth direction and emit light that is linearly polarized in the direction orthogonal to the NW axis. At room temperature, the PL emission is found to be dominated by recombination of free carriers/excitons and their lifetime is governed by non-radiative recombination via surface states. The surface recombination is found to become less severe upon N incorporation due to N-induced modification of the surface states, possibly due to partial surface nitridation. All these findings suggest that the GaNAs/GaAs hetero-structures with the onedimensional geometry are promising for fabrication of novel optoelectronic devices on foreign substrates (e.g. Si).

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures has significant implications in photon entanglement, relevant to quantum information technology and spintronics. In paper 5 we study FSS in various laterally-arranged single quantum molecular structures (QMSs), including double QDs (DQDs), quantum rings (QRs), and QD-clusters (QCs), by means of polarization resolved μ-PL spectroscopy. It is found that FSS strongly depends on the geometric arrangements of the QMSs, which can effectively tune the degree of asymmetry in the lateral confinement potential of the excitons and can reduce FSS even in a strained QD system to a limit similar to strain-free QDs.

Fabrication of nanostructured ZnO-based devices involves, as a compulsory step, deposition of thin metallic layers. In paper 6 we investigate impact of metallization by Ni on structural quality of ZnO NWs by means of Raman spectroscopy. We show that Ni coating of ZnO NWs causes passivation of surface states responsible for the enhanced intensity of the A1(LO) in the bare ZnO NWs. From the resonant Raman studies, strong enhancement of the multiline Raman signal involving A1(LO) in the ZnO/Ni NWs is revealed and is attributed to the combined effects of the Fröhlich interaction and plasmonic coupling. The latter effect is also suggested to allow detection of carbon-related species absorbed at the surface of a single ZnO/Ni NW, promising for utilizing such structures as efficient nano-sized gas sensors.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2015. p. 55
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1731
National Category
Physical Sciences Nano Technology
Identifiers
urn:nbn:se:liu:diva-123939 (URN)10.3384/diss.diva-123939 (DOI)978-91-7685-877-6 (ISBN)
Public defence
2016-02-05, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2016-01-14 Created: 2016-01-14 Last updated: 2017-03-27Bibliographically approved
Chubarov, M., Pedersen, H., Högberg, H., Filippov, S., Engelbrecht, J. A., O'Connel, J. & Henry, A. (2014). Boron nitride: A new photonic material. Physica. B, Condensed matter, 439, 29-34
Open this publication in new window or tab >>Boron nitride: A new photonic material
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2014 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 439, p. 29-34Article in journal (Refereed) Published
Abstract [en]

Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp(2)-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

Place, publisher, year, edition, pages
Elsevier, 2014
Keywords
Boron nitride; Epitaxy; XRD; TEM; FTIR; Cathodoluminescence
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-105563 (URN)10.1016/j.physb.2013.10.068 (DOI)000331620700007 ()
Available from: 2014-03-31 Created: 2014-03-27 Last updated: 2017-12-05
Stehr, J. E., Chen, S. L., Filippov, S., Devika, M., Koteeswara Reddy, N., Tu, C. W., . . . Buyanova, I. (2014). Defect properties of ZnO nanowires. Paper presented at 27th Int. Conf. on Defects in Semiconductors, Bologna, Italy, July 21-26, 2013. AIP Conference Proceedings, 1583, 272-276
Open this publication in new window or tab >>Defect properties of ZnO nanowires
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2014 (English)In: AIP Conference Proceedings, ISSN 0094-243X, E-ISSN 1551-7616, Vol. 1583, p. 272-276Article in journal (Refereed) Published
Abstract [en]

In this work we examined optical and defect properties of as-grown and Ni-coated ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition by means of optically detected magnetic resonance (ODMR). Several grown-in defects are revealed by monitoring visible photoluminescence (PL) emissions and are attributed to Zn vacancies, O vacancies, a shallow (but not effective mass) donor and exchange-coupled pairs of a Zn vacancy and a Zn interstitial. It is also found that the same ODMR signals are detected in the as-grown and Ni-coated NWs, indicating that metal coatings does not significantly affect formation of the aforementioned defects and that the observed defects are located in the bulk of the NWs.

National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-93893 (URN)10.1063/1.4865651 (DOI)000342321600059 ()
Conference
27th Int. Conf. on Defects in Semiconductors, Bologna, Italy, July 21-26, 2013
Available from: 2013-06-11 Created: 2013-06-11 Last updated: 2019-06-28
Stehr, J. E., Dobrovolsky, A., Filippov, S., Kuang, Y. J., Sukrittanon, S., Tu, C. W., . . . Buyanova, I. (2014). GaP/GaNP core/shell nanowires - a novel material system for optoelectronics and photonics. In: Abstract Book of the 3rd Int. Conf. on Nanostructures, Nanomaterials and Nanoengineering: . Paper presented at The 3rd Int. Conf. on Nanostructures, Nanomaterials and Nanoengineering, Dec.26-28 2014, Hong Kong (pp. 31).
Open this publication in new window or tab >>GaP/GaNP core/shell nanowires - a novel material system for optoelectronics and photonics
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2014 (English)In: Abstract Book of the 3rd Int. Conf. on Nanostructures, Nanomaterials and Nanoengineering, 2014, p. 31-Conference paper, Published paper (Refereed)
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-113963 (URN)
Conference
The 3rd Int. Conf. on Nanostructures, Nanomaterials and Nanoengineering, Dec.26-28 2014, Hong Kong
Available from: 2015-02-04 Created: 2015-02-04 Last updated: 2018-04-25
Filippov, S. (2014). Optical properties of novel semiconductor nanostructures. (Licentiate dissertation). Linköping: Linköping University Electronic Press
Open this publication in new window or tab >>Optical properties of novel semiconductor nanostructures
2014 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Semiconductor nanostructures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), have recently gained increasing interest due to their unique physical properties that are found attractive for a wide variety of applications ranging from gas sensing and spintronics to optoelectronics and photonics. Here, especially promising are nanostructures based on compound semiconductors, including ZnO, GaNP and GaAs/InAs. For examples, ZnO NWs are used for gas sensing. They also serve as an active material in UV light sources, owing to its wide band gap combined with a large exciton binding energy. GaNP NWs are a novel material system that allows realization of efficient amber lightemitting diodes and novel intermediate-band solar cells with an anticipated high efficiency. InAs QDs formed in the GaAs matrix are efficient emitters of near IR light and can be utilized in future spin-functional devices for applications in spintronics and quantum information processing. The realization of the full potential of semiconductor nanostructures requires detailed knowledge of their electronic and structural properties which is far from being complete at the present stage of research. In this thesis we address some of these important issues using optical characterization techniques, such as micro-Raman and  microphotoluminescence (μ-PL) spectroscopies.

In paper I we use Raman spectroscopy to investigate effects of metallization by nickel on electronic and structural properties of ZnO/Ni core/shell NWs. We show that coating ZnO NWs with Ni shells causes passivation of surface states whereas subsequent annealing leads to formation of new defects, evident from appearance of the corresponding local vibrational modes. Ni coating is also found to strongly enhance the multiline Raman signal involving A1(LO) phonon scattering, based on the performed resonant Raman studies. This is attributed to an enhanced Fröhlich interaction at the ZnO/Ni heterointerface combined with coupling of the scattered light with local surface plasmons excited in the Ni shell. The latter effect is also suggested to allow detection of carbon-related species absorbed at the surface of a single ZnO/Ni NW, promising for utilizing such structures as efficient nano-sized gas sensors.

In paper II we study polarization properties of GaNP nanowires and related axial structures. By employing polarization resolved μ-PL spectroscopy performed on a single NW, we show that alloying with nitrogen allows one to achieve strong orthogonal polarization of light emission even in zinc-blende nanowires of various diameters and that the polarization anisotropy can be retained up to room temperature. This polarization response, which is unusual for zinc blende NWs, is attributed to the local strain in the vicinity of the N-related centers participating in the radiative recombination and to the preferential alignment of their principal axis along the growth direction. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to control the polarization anisotropy of III-V nanowires, advantageous for their applications as nanoscale emitters of polarized light.

In paper III we investigate exciton fine-structure splitting (FSS) in self-organized InGaAs/GaAs nanostructures including laterally-aligned double quantum dots (DQDs), quantum-dot clusters (QCs) and quantum rings (QRs), by employing polarization resolved μ-PL spectroscopy. We find a clear trend in FSS between the studied nanostructures depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs with an overall higher geometric symmetry. This trend is accompanied by a corresponding difference in the polarization directions of the excitonic emissions between these nanostructures, namely, the bright-exciton lines are linearly polarized along or perpendicular to a specific crystallographic axis in the DQDs structure that also defines the alignment of the two QDs, whereas in the QCs and QRs the polarization directions are randomly oriented. We attribute these trends to the interplay between intrinsic effects, such as a statistic shape deviation, atomistic randomness and strain-induced piezoelectricity. Our work demonstrates that FSS can be effectively controlled by geometric engineering of the nanostructures, capable of reducing FSS to the limit similar to strain-free QDs and thus providing a new pathway in fabricating high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2014. p. 34
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1691
National Category
Physical Sciences Nano Technology
Identifiers
urn:nbn:se:liu:diva-112355 (URN)978-91-7519-185-0 (ISBN)
Presentation
2014-12-17, Jordan-Fermi, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 09:30 (English)
Opponent
Supervisors
Note

The series name Linköping Studies in Science and Technology Licentiate Thesis is incorrect. The correct series name is Linköping Studies in Science and Technology Thesis.

Available from: 2014-11-24 Created: 2014-11-24 Last updated: 2017-03-27Bibliographically approved
Chen, S., Filippov, S., Ishikawa, F., Chen, W. & Buyanova, I. (2014). Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires. Applied Physics Letters, 105(25), 253106
Open this publication in new window or tab >>Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 25, p. 253106-Article in journal (Refereed) Published
Abstract [en]

Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (mu-PL) and mu-PL excitation (mu-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation. (C) 2014 AIP Publishing LLC.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-113778 (URN)10.1063/1.4905090 (DOI)000346914000026 ()
Available from: 2015-02-02 Created: 2015-01-30 Last updated: 2019-06-28
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