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Chen, Jr-Tai
Publications (10 of 12) Show all publications
Bergsten, J., Chen, J.-T., Gustafsson, S., Malmros, A., Forsberg, U., Thorsell, M., . . . Rorsman, N. (2016). Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process. IEEE Transactions on Electron Devices, 63(1), 333-338
Open this publication in new window or tab >>Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process
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2016 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 63, no 1, p. 333-338Article in journal (Refereed) Published
Abstract [en]

The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized AlGaN/GaN interface and another with an unoptimized, were grown using hot-wall metal-organic chemical vapor deposition. The structure with optimized sharpness of the interface shows electron mobility of 1760 cm(2)/V . s as compared with 1660 cm(2)/V . s for the nonoptimized interface. Gated Hall measurements indicate that the sharper interface maintains higher mobility when the electrons are close to the interface compared with the nonoptimized structure, indicating less scattering due to alloy disorder and interface roughness. HEMTs were processed and evaluated. The higher mobility manifests as lower parasitic resistance yielding a better dc and high-frequency performance. A small-signal equivalent model is extracted. The results indicate a lower electron penetration into the buffer in the optimized sample. Pulsed-IV measurements imply that the sharper interface provides less dispersive effects at large drain biases. We speculate that the mobility enhancement seen AlGaN/AlN/GaN structures compared with the AlGaN/GaN case is not only related to the larger conduction band offset but also due to a more welldefined interface minimizing scattering due to alloy disorder and interface roughness.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2016
Keywords
AlGaN/GaN interface; GaN high-electron mobility transistor (HEMT); interface sharpness
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-124488 (URN)10.1109/TED.2015.2501838 (DOI)000367259600043 ()
Note

Funding Agencies|Swedish Governmental Agency for Innovation Systems; Swedish Defence Materiel Administration; Swedish Foundation for Strategic Research

Available from: 2016-02-02 Created: 2016-02-01 Last updated: 2017-11-30
Gustafsson, S., Chen, J.-T., Bergsten, J., Forsberg, U., Thorsell, M., Janzén, E. & Rorsman, N. (2015). Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer. IEEE Transactions on Electron Devices, 62(7), 2162-2169
Open this publication in new window or tab >>Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
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2015 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, no 7, p. 2162-2169Article in journal (Refereed) Published
Abstract [en]

Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper, is varied using different levels of carbon incorporation. Three epitaxial structures have been fabricated: 1) two with uniform carbon doping profile but different carbon concentration and 2) one with a stepped doping profile. The epitaxial structures have been grown on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping. The leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude (10-4 A/mm) for the high-doped and stepped-doped buffer. The high-doped material had a current collapse (CC) of 78.8% compared with 16.1% for the stepped-doped material under dynamic I-V conditions. The low-doped material had low CC (5.2%) but poor buffer isolation. Trap characterization revealed that the high-doped material had two trap levels at 0.15 and 0.59 eV, and the low-doped material had one trap level at 0.59 eV.

Place, publisher, year, edition, pages
IEEE Press, 2015
Keywords
Gallium nitride, HEMTs, trap levels, current collapse, dispersion
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-117136 (URN)10.1109/TED.2015.2428613 (DOI)000356457900014 ()
Available from: 2015-04-17 Created: 2015-04-17 Last updated: 2017-12-04Bibliographically approved
Chen, J.-T., Pomeroy, J. W., Rorsman, N., Xia, C., Virojanadara, C., Forsberg, U., . . . Janzén, E. (2015). Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface. Journal of Crystal Growth, 428, 54-58
Open this publication in new window or tab >>Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface
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2015 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 428, p. 54-58Article in journal (Refereed) Published
Abstract [en]

The crystalline quality of AlGaN/GaN heterostructures was improved by optimization of surface pretreatment of the SiC substrate in a hot-wall metal-organic chemical vapor deposition reactor. X-ray photoelectron spectroscopy measurements revealed that oxygen- and carbon-related contaminants were still present on the SiC surface treated at 1200 °C in H2 ambience, which hinders growth of thin AlN nucleation layers with high crystalline quality. As the H2 pretreatment temperature increased to 1240 °C, the crystalline quality of the 105 nm thick AlN nucleation layers in the studied series reached an optimal value in terms of full width at half-maximum of the rocking curves of the (002) and (105) peaks of 64 and 447 arcsec, respectively. The improvement of the AlN growth also consequently facilitated a growth of the GaN buffer layers with high crystalline quality. The rocking curves of the GaN (002) and (102) peaks were thus improved from 209 and 276 arcsec to 149 and 194 arcsec, respectively. In addition to a correlation between the thermal resistance and the structural quality of an AlN nucleation layer, we found that the microstructural disorder of the SiC surface and the morphological defects of the AlN nucleation layers to be responsible for a substantial thermal resistance. Moreover, in order to decrease the thermal resistance in the GaN/SiC interfacial region, the thickness of the AlN nucleation layer was then reduced to 35 nm, which was shown sufficient to grow AlGaN/GaN heterostructures with high crystalline quality. Finally, with the 35 nm thick high-quality AlN nucleation layer a record low thermal boundary resistance of 1.3×10−8 m2 K/W, measured at an elevated temperature of 160 °C, in a GaN-on-SiC transistor structure was achieved.

Place, publisher, year, edition, pages
Elsevier, 2015
Keywords
Heat transfer; Metalorganic chemical vapor deposition; Nitrides; High electron mobility transistors
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-117132 (URN)10.1016/j.jcrysgro.2015.07.021 (DOI)000360501200009 ()
Available from: 2015-04-17 Created: 2015-04-17 Last updated: 2017-12-04Bibliographically approved
Chen, J.-T., Hsu, C.-W., Forsberg, U. & Janzén, E. (2015). Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates. Journal of Applied Physics, 117(8), Article ID 085301.
Open this publication in new window or tab >>Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates
2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 8, article id 085301Article in journal (Refereed) Published
Abstract [en]

Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H2 atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm2/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 1020 cm−3 at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm2 SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-117135 (URN)10.1063/1.4913223 (DOI)000351132500059 ()
Note

The authors would like to acknowledge the support from the Swedish Foundation for Strategic Research.

Available from: 2015-04-17 Created: 2015-04-17 Last updated: 2017-12-04Bibliographically approved
Chen, J.-T. (2015). MOCVD growth of GaN-based high electron mobility transistor structures. (Doctoral dissertation). Linköping: Linköping University Electronic Press
Open this publication in new window or tab >>MOCVD growth of GaN-based high electron mobility transistor structures
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaN-based HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.

The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN,  AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback for adjusting growth parameters and developing improved growth processes.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2015. p. 59
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1662
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-117138 (URN)10.3384/diss.diva-117138 (DOI)978-91-7519-073-0 (ISBN)
Public defence
2015-05-12, Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2015-04-17 Created: 2015-04-17 Last updated: 2015-04-17Bibliographically approved
Chen, J.-T., Persson, I., Nilsson, D., Hsu, C.-W., Palisaitis, J., Forsberg, U., . . . Janzén, E. (2015). Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure. Applied Physics Letters, 106(25), Article ID 251601.
Open this publication in new window or tab >>Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 25, article id 251601Article in journal (Refereed) Published
Abstract [en]

A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-117133 (URN)10.1063/1.4922877 (DOI)000357036600005 ()
Available from: 2015-04-17 Created: 2015-04-17 Last updated: 2017-12-04Bibliographically approved
Ivanov, I. G., Yazdanfar, M., Lundqvist, B., Chen, J.-T., ul-Hassan, J., Stenberg, P., . . . Janzén, E. (2014). High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC. In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2: . Paper presented at 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan (pp. 471-474). Trans Tech Publications Inc., 778-780
Open this publication in new window or tab >>High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
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2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 AND 2, Trans Tech Publications Inc., 2014, Vol. 778-780, p. 471-474Conference paper, Published paper (Refereed)
Abstract [en]

The optical properties of isotope-pure (SiC)-Si-28-C-12, natural SiC and enriched with C-13 isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Gamma point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-controlled Si is presented.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014
Series
Materials Science Forum, ISSN 1662-9752 ; 778-780
Keywords
isotope-pure SiC; isotope-enriched SiC; Raman spectroscopy; photoluminescence; bandgap variation with isotope content
National Category
Ceramics
Identifiers
urn:nbn:se:liu:diva-108198 (URN)10.4028/www.scientific.net/MSF.778-780.471 (DOI)000336634100110 ()
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), 29 September - 4 October 2013, Miyazaki, Japan
Available from: 2014-06-26 Created: 2014-06-26 Last updated: 2014-10-28Bibliographically approved
Chen, J.-T., Forsberg, U. & Janzén, E. (2013). Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure. Applied Physics Letters, 102(19), 193506
Open this publication in new window or tab >>Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 19, p. 193506-Article in journal (Refereed) Published
Abstract [en]

High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm−3 down to ∼1 × 1016 cm−3, can be effectively controlled in the growth of the GaN buffer layer. Excellent uniformity of two-dimensional electron gas (2DEG) properties in AlxGa1−xN/AlN/GaN heterostructure with very high average carrier density and mobility, 1.1 × 1013 cm−2 and 2035 cm2/V·s, respectively, over 3" semi-insulating SiC substrate is realized with the temperature-tuned carbon doping scheme. Reduction of carbon concentration is evidenced as a key to achieve high 2DEG carrier density and mobility.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-96138 (URN)10.1063/1.4804600 (DOI)000320440800103 ()
Available from: 2013-08-14 Created: 2013-08-14 Last updated: 2017-12-06
Pomeroy, J., Rorsman, N., Chen, J.-T., Forsberg, U., Janzén, E. & Kuball, M. (2013). Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization. In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE: . Paper presented at 35th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS 2013), Monterey, CA, USA, 13-16 October 2013 (pp. 1-4). IEEE
Open this publication in new window or tab >>Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization
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2013 (English)In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE, IEEE , 2013, p. 1-4Conference paper, Published paper (Refereed)
Abstract [en]

Impressive power densities have been demonstrated for GaN-on-SiC based high-power high-frequency transistors, although further gains can be achieved by further minimizing the device thermal resistance. A significant 10-30% contribution to the total device thermal resistance originates from the high defect density AlN nucleation layer at the GaN/SiC interface. This thermal resistance contribution was successfully reduced by performing systematic growth optimization, investigating growth parameters including: Substrate pretreatment temperature, growth temperature and deposition time. Interfacial thermal resistance, characterized by time resolved Raman thermography measurements AlGaN/GaN HEMT structures, were minimized by using a substrate pretreatment and growth temperature of 1200 °C. Reducing the AlN thickness from 105 nm (3.3×10-8W/m2K) to 35 nm (3.3×10-8 W/m2K), led to a ~2.5× interfacial thermal resistance reduction and the lowest value reported for a standard AlGaN/GaN HEMT structure.

Place, publisher, year, edition, pages
IEEE, 2013
Keywords
Gallium nitride, HEMTs, optical microscopy, Raman scattering, semiconductor growth, temperature measurement, thermal analysis, thermal resistance
National Category
Chemical Sciences
Identifiers
urn:nbn:se:liu:diva-111501 (URN)10.1109/CSICS.2013.6659233 (DOI)978-147990583-6 (ISBN)
Conference
35th IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS 2013), Monterey, CA, USA, 13-16 October 2013
Available from: 2014-10-20 Created: 2014-10-20 Last updated: 2015-04-17Bibliographically approved
Hofmann, T., Kuehne, P., Schöche, S., Chen, J.-T., Forsberg, U., Janzén, E., . . . Darakchieva, V. (2012). Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures. Applied Physics Letters, 101(19)
Open this publication in new window or tab >>Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
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2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 19Article in journal (Refereed) Published
Abstract [en]

The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 +/- 0.01)m(0) at 1.5 K to (0.36 +/- 0.03)m(0) at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-87216 (URN)10.1063/1.4765351 (DOI)000311320100032 ()
Available from: 2013-01-14 Created: 2013-01-14 Last updated: 2017-12-06
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