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Puglisi, Donatella
Publications (10 of 40) Show all publications
Andersson, M., Lloyd Spetz, A. & Puglisi, D. (2020). Recent progress in silicon carbide field effect gas sensors (2ed.). In: Raivo Jaaniso and Ooi Kiang Tan (Ed.), Semiconductor gas sensors: (pp. 309-346). Oxford: Woodhead Publishing Limited
Open this publication in new window or tab >>Recent progress in silicon carbide field effect gas sensors
2020 (English)In: Semiconductor gas sensors / [ed] Raivo Jaaniso and Ooi Kiang Tan, Oxford: Woodhead Publishing Limited, 2020, 2, p. 309-346Chapter in book (Refereed)
Abstract [en]

The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C with an increased number of detectable gases. Here, we review recent progress in research and applications, starting with transducer and detection mechanisms, presenting new material combinations as sensing layers for improved selectivity and detection limits down to subparts per billion. We describe how temperature cycled operation combined with advanced data evaluation enables one sensor to act as a sensor array thereby vastly improving selectivity. Field tests require advanced packaging, which is described, and examples of possible applications like selective detection of ammonia for urea injection control in diesel exhausts and toxic volatile organic compounds for indoor air quality monitoring and control are given.

Place, publisher, year, edition, pages
Oxford: Woodhead Publishing Limited, 2020 Edition: 2
Series
Woodhead Publishing Series in Electronic and Optical Materials
Keywords
Gas sensors, field-effect gas sensors, semiconductor gas sensors, VOC, harsh environment
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-161059 (URN)10.1016/B978-0-08-102559-8.00010-0 (DOI)9780081025598 (ISBN)
Available from: 2019-10-18 Created: 2019-10-18 Last updated: 2019-12-06Bibliographically approved
Puglisi, D. & Bertuccio, G. (2019). Silicon Carbide Microstrip Radiation Detectors. Micromachines, 10(12), Article ID 835.
Open this publication in new window or tab >>Silicon Carbide Microstrip Radiation Detectors
2019 (English)In: Micromachines, ISSN 2072-666X, E-ISSN 2072-666X, Vol. 10, no 12, article id 835Article in journal (Refereed) Published
Abstract [en]

Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at room temperature, with high performance, and without the use of any bulky and expensive cooling equipment. In this work, we investigated the electrical and spectroscopic performance of an innovative position-sensitive semiconductor radiation detector in epitaxial 4H-SiC. The full depletion of the epitaxial layer (124 µm, 5.2 × 1013 cm−3) was reached by biasing the detector up to 600 V. For comparison, two different microstrip detectors were fully characterized from −20 °C to +107 °C. The obtained results show that our prototype detector is suitable for high resolution X-ray spectroscopy with imaging capability in a wide range of operating temperatures.

Place, publisher, year, edition, pages
MDPI, 2019
Keywords
silicon carbide; semiconductor radiation detector; microstrip detector
National Category
Engineering and Technology Accelerator Physics and Instrumentation
Identifiers
urn:nbn:se:liu:diva-162431 (URN)10.3390/mi10120835 (DOI)000507337900023 ()31801210 (PubMedID)
Note

Funding agencies: Italian National Institute of Nuclear Physics (INFN)Istituto Nazionale di Fisica Nucleare; Italian Space Agency (ASI) - Linkoping University

Available from: 2019-12-02 Created: 2019-12-02 Last updated: 2020-02-17Bibliographically approved
Rodner, M., Puglisi, D., Yakimova, R. & Eriksson, J. (2018). A platform for extremely sensitive gas sensing: 2D materials on silicon carbide. In: : . Paper presented at Materials for Energy, Efficiency and Sustainablility: TechConnect Briefs (pp. 101-104). , 2
Open this publication in new window or tab >>A platform for extremely sensitive gas sensing: 2D materials on silicon carbide
2018 (English)Conference paper, Published paper (Refereed)
National Category
Materials Engineering
Identifiers
urn:nbn:se:liu:diva-162244 (URN)978-0-9988782-3-2 (ISBN)
Conference
Materials for Energy, Efficiency and Sustainablility: TechConnect Briefs
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-05Bibliographically approved
Santangelo, M. F., Shtepliuk, I. I., Puglisi, D., Filippini, D., Yakimova, R. & Eriksson, J. (2018). Epitaxial graphene sensors combined with 3D printed microfluidic chip for heavy metals detection. Paper presented at EUROSENSORS 2018. Proceedings, 2(13), Article ID 982.
Open this publication in new window or tab >>Epitaxial graphene sensors combined with 3D printed microfluidic chip for heavy metals detection
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2018 (English)In: Proceedings, ISSN 2504-3900, Vol. 2, no 13, article id 982Article in journal (Refereed) Published
Abstract [en]

Two-dimensional materials may constitute key elements in the development of a sensing platform where extremely high sensitivity is required, since even minimal chemical interaction can generate appreciable changes in the electronic state of the material. In this work, we investigate the sensing performance of epitaxial graphene on Si-face 4H-SiC (EG/SiC) for liquid-phase detection of heavy metals (e.g., Pb). The integration of preparatory steps needed for sample conditioning is included in the sensing platform, exploiting fast prototyping using a 3D printer, which allows direct fabrication of a microfluidic chip incorporating all the features required to connect and execute the Lab-on-chip (LOC) functions. It is demonstrated that interaction of Pb2+ ions in water-based solutions with the EG enhances its conductivity exhibiting a Langmuir correlation between signal and Pb2+ concentration. Several concentrations of Pb2+ solutions ranging from 125 nM to 500 µM were analyzed showing good stability and reproducibility over time.

Place, publisher, year, edition, pages
MDPI, 2018
Keywords
heavy metals detection; epitaxial graphene; high sensitivity; 3D printed flow cell; reusable lab-on-chip
National Category
Analytical Chemistry
Identifiers
urn:nbn:se:liu:diva-162243 (URN)10.3390/proceedings2130982 (DOI)
Conference
EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-03Bibliographically approved
Rodner, M., Puglisi, D., Helmersson, U., Ivanov, I. G., Yakimova, R., Uvdal, K., . . . Eriksson, J. (2018). Iron oxide nanoparticle decorated graphene for ultra-sensitive detection of volatile organic compounds. Paper presented at EUROSENSORS 2018. Proceedings, 2(13), Article ID 985.
Open this publication in new window or tab >>Iron oxide nanoparticle decorated graphene for ultra-sensitive detection of volatile organic compounds
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2018 (English)In: Proceedings, ISSN 2504-3900, Vol. 2, no 13, article id 985Article in journal (Refereed) Published
Abstract [en]

It has been found that two-dimensional materials, such as graphene, can be used as remarkable gas detection platforms as even minimal chemical interactions can lead to distinct changes in electrical conductivity. In this work, epitaxially grown graphene was decorated with iron oxide nanoparticles for sensor performance tuning. This hybrid surface was used as a sensing layer to detect formaldehyde and benzene at concentrations of relevance in air quality monitoring (low parts per billion). Moreover, the time constants could be drastically reduced using a derivative sensor signal readout, allowing detection at the sampling rates desired for air quality monitoring applications.

Place, publisher, year, edition, pages
MDPI, 2018
Keywords
epitaxial graphene; metal oxide nanoparticle; gas sensor; volatile organic compounds; benzene; formaldehyde; derivative sensor signal
National Category
Physical Chemistry
Identifiers
urn:nbn:se:liu:diva-162242 (URN)10.3390/proceedings2130985 (DOI)
Conference
EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2020-01-14Bibliographically approved
Bastuck, M., Puglisi, D., Lloyd Spetz, A., Schuetze, A., Sauerwald, T. & Andersson, M. (2018). UV-assisted gate bias cycling in gas-sensitive field-effect transistors. Paper presented at EUROSENSORS 2018. Proceedings, 2(13), Article ID 999.
Open this publication in new window or tab >>UV-assisted gate bias cycling in gas-sensitive field-effect transistors
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2018 (English)In: Proceedings, ISSN 2504-3900, Vol. 2, no 13, article id 999Article in journal (Refereed) Published
Abstract [en]

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

Place, publisher, year, edition, pages
MDPI, 2018
National Category
Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-162239 (URN)10.3390/proceedings2130999 (DOI)
Conference
EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2020-01-14Bibliographically approved
Hasegawa, Y., Puglisi, D. & Lloyd Spetz, A. (2017). Development of Agriculture Support System Using Plant Bioelectric Potential Responses and Gas Sensor. International Journal of Food and Biosystems Engineering, 5(1), 44-51
Open this publication in new window or tab >>Development of Agriculture Support System Using Plant Bioelectric Potential Responses and Gas Sensor
2017 (English)In: International Journal of Food and Biosystems Engineering, ISSN 2408-0675, Vol. 5, no 1, p. 44-51Article in journal (Refereed) Published
Abstract [en]

In this study,we focus on the plant bioelectric potential response as a low-cost and a high sensitivity evaluation technique of plant physiological activities for an agriculture support system. We developed a cultivation light intensity control system using bioelectric potential response. This system contributes to improvement of the cultivation environment and provides energy saving effect.In addition, we introduced a field effect transistor based on silicon carbide (SiC-FET)gas sensor and evaluated the characteristics of the sensor by changing several parameters. The results showed that iridium gated SiC-FET sensor has high sensitivity to ethylene,and the highest response is achieved at 200 ◦C. We aim at the development of an agriculture support system, which combines the plant bioelectrical potential and the SiC-FET gas sensor response.

Keywords
Field effect transistor, gas sensor, plant bioelectric potential, plant factory, agriculture support system, cultivation environment control, physiological activities of plant, ethylene
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-162231 (URN)
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-02Bibliographically approved
Hasegawa, Y., Ishida, R., Puglisi, D. & Lloyd Spetz, A. (2017). Development of ethylene gas sensor for evaluating fruit ripening. In: : . Paper presented at European Advanced Materials Congress 2017.
Open this publication in new window or tab >>Development of ethylene gas sensor for evaluating fruit ripening
2017 (English)Conference paper, Poster (with or without abstract) (Refereed)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:liu:diva-162245 (URN)
Conference
European Advanced Materials Congress 2017
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-06Bibliographically approved
Bastuck, M., Puglisi, D., Möller, P., Reimringer, W., Schuetze, A., Lloyd Spetz, A. & Andersson, M. (2017). Low-cost chemical gas sensors for selective formaldehyde quantification at ppb-level in field tests. In: : . Paper presented at AMA Conferences 2017 - Sensor 2017 and IRS2 2017, Germany, 30 May - 1 June, 2017 (pp. 702-707).
Open this publication in new window or tab >>Low-cost chemical gas sensors for selective formaldehyde quantification at ppb-level in field tests
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2017 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Data from a silicon carbide based field-effect transistor were recorded over a period of nine days in a ventilated school room. For enhanced sensitivity and selectivity especially to formaldehyde, porous iridium on pulsed laser deposited tungsten trioxide was used as sensitive layer, in combination with temperature cycled operation and subsequent multivariate data processing techniques. The sensor signal was compared to reference measurements for formaldehyde concentration, CO2 concentration, temperature, and relative humidity. The results show a distinct pattern for the reference formaldehyde concentration, arising from the day/night cycle. Taking this into account, the projections of both principal component analysis and partial least squares regression lead to almost the same result concerning correlation to the reference. The sensor shows cross-sensitivity to an unidentified component of human activity, presumably breath, and, possibly, to other compounds appearing together with formaldehyde in indoor air. Nevertheless, the sensor is able to detect and partially quantify formaldehyde below 40 ppb with a correlation to the reference of 0.48 and negligible interference from ambient temperature or relative humidity.

Keywords
SiC-FET, multivariate data processing, indoor air quality, VOC, sick building syndrome
National Category
Engineering and Technology Other Chemical Engineering
Identifiers
urn:nbn:se:liu:diva-162246 (URN)
Conference
AMA Conferences 2017 - Sensor 2017 and IRS2 2017, Germany, 30 May - 1 June, 2017
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2019-12-06Bibliographically approved
Puglisi, D., Eriksson, J., Andersson, M., Huotari, J., Bastuck, M., Bur, C., . . . Lloyd Spetz, A. (2016). Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors. Paper presented at 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015. Materials Science Forum, 858, 997-1000
Open this publication in new window or tab >>Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, p. 997-1000Article in journal (Refereed) Published
Abstract [en]

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2016
Keywords
Field Effect Transistor, Gas Sensor, Iridium/Tungsten Trioxide, Benzene, 4H-SiC
National Category
Environmental Engineering
Identifiers
urn:nbn:se:liu:diva-124153 (URN)10.4028/www.scientific.net/MSF.858.997 (DOI)
Conference
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
Projects
SENSIndoor, www.sensindoor.eu
Funder
EU, FP7, Seventh Framework Programme, 604311
Available from: 2016-01-20 Created: 2016-01-20 Last updated: 2020-02-17
Organisations

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