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Höjer, Pontus
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Shi, Y., Jokubavicius, V., Höjer, P., Ivanov, I. G., Yazdi, G., Yakimova, R., . . . Sun, J. W. (2019). A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates. Journal of Physics D: Applied Physics, 52(34)
Open this publication in new window or tab >>A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
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2019 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 52, no 34Article in journal (Refereed) Published
Abstract [en]

We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that the high-quality bulk-like C-face 3C-SiC with thickness of ~1 mm can be grown over a large single domain without double positioning boundaries (DPBs), which are known to have a strongly negative impact on the electronic properties of the material. Moreover, the C-face sample exhibits a smoother surface with one unit cell height steps while the surface of the Si-face sample exhibits steps twice as high as on the C-face due to step-bunching. High-resolution XRD and low temperature photoluminescence measurements show that C-face 3C-SiC can reach the same high crystalline quality as the Si-face 3C-SiC. Furthermore, cross-section studies of the C- and Si-face 3C-SiC demonstrate that in both cases an initial homoepitaxial 4H-SiC layer followed by a polytype transition layer are formed prior to the formation and lateral expansion of 3C-SiC layer. However, the transition layer in the C-face sample is extending along the step-flow direction less than that on the Si-face sample, giving rise to a more fairly consistent crystalline quality 3C-SiC epilayer over the whole sample compared to the Si-face 3C-SiC where more defects appeared on the surface at the edge. This facilitates the lateral enlargement of 3C-SiC growth on hexagonal SiC substrates.

Place, publisher, year, edition, pages
Biopress Ltd, 2019
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-159101 (URN)10.1088/1361-6463/ab2859 (DOI)000475964100002 ()
Note

Funding agencies:  Swedish Research Council (Vetenskapsradet) [621-2014-5461, 2018-04670, 2016-05362, 621-2014-5825]; Swedish Research Council for Environment, Agricultural Sciences and Spatial Planning (FORMAS) [2016-00559]; Swedish Foundation for International Cooperation

Available from: 2019-07-24 Created: 2019-07-24 Last updated: 2019-08-07
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