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Balagula, Roman
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Stehr, J. E., Balagula, R., Jansson, M., Yukimune, M., Fujiwara, R., Ishikawa, F., . . . Buyanova, I. A. (2020). Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range. Nanotechnology, 31(6), Article ID 065702.
Open this publication in new window or tab >>Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range
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2020 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 31, no 6, article id 065702Article in journal (Refereed) Published
Abstract [en]

We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at ~1 μm, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect optical quality of the active GaNAs shell and is shown to result from suppressed formation of non-radiative recombination (NRR) centers under the optimum growth temperature. By employing the optically detected magnetic resonance spectroscopy, we identify gallium vacancies and gallium interstitials as being among the dominant NRR defects. The radiative efficiency of the NWs can be further improved by post-growth annealing at 680 °C, which removes the gallium interstitials.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2020
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-161947 (URN)10.1088/1361-6528/ab51cd (DOI)000502786100001 ()31658456 (PubMedID)
Note

Funding agencies:  Swedish Energy AgencySwedish Energy Agency [P40119-1]; Swedish Research CouncilSwedish Research Council [2015-05532]; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [JA2014-5698]; Swedish Government Strategic Res

Available from: 2019-11-14 Created: 2019-11-14 Last updated: 2020-01-02Bibliographically approved
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