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Darabi, S., Yang, C., Li, Z., Huang, J.-D., Hummel, M., Sixta, H., . . . Mueller, C. (2023). Polymer-Based n-Type Yarn for Organic Thermoelectric Textiles. Advanced Electronic Materials, 9(4), Article ID 2201235.
Open this publication in new window or tab >>Polymer-Based n-Type Yarn for Organic Thermoelectric Textiles
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2023 (English)In: Advanced Electronic Materials, E-ISSN 2199-160X, Vol. 9, no 4, article id 2201235Article in journal (Refereed) Published
Abstract [en]

A conjugated-polymer-based n-type yarn for thermoelectric textiles is presented. Thermoelectric textile devices are intriguing power sources for wearable electronic devices. The use of yarns comprising conjugated polymers is desirable because of their potentially superior mechanical properties compared to other thermoelectric materials. While several examples of p-type conducting yarns exist, there is a lack of polymer-based n-type yarns. Here, a regenerated cellulose yarn is spray-coated with an n-type conducting-polymer-based ink composed of poly(benzimidazobenzophenanthroline) (BBL) and poly(ethyleneimine) (PEI). The n-type yarns display a bulk electrical conductivity of 8 x 10(-3) S cm(-1) and Seebeck coefficient of -79 mu V K-1. A promising level of air-stability for at least 13 days can be achieved by applying an additional thermoplastic elastomer coating. A prototype in-plane thermoelectric textile, produced with the developed n-type yarns and p-type yarns, composed of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)-coated regenerated cellulose, displays a stable device performance in air for at least 4 days with an open-circuit voltage per temperature difference of 1 mV degrees C-1. Evidently, polymer-based n-type yarns are a viable component for the construction of thermoelectric textile devices.

Place, publisher, year, edition, pages
WILEY, 2023
Keywords
electrically conducting regenerated cellulose yarn; electronic textiles (e-textiles); organic thermoelectrics; poly(benzimidazobenzophenanthroline) (BBL); thermoelectric textile devices
National Category
Other Materials Engineering
Identifiers
urn:nbn:se:liu:diva-192164 (URN)10.1002/aelm.202201235 (DOI)000932198300001 ()
Available from: 2023-03-06 Created: 2023-03-06 Last updated: 2024-03-07Bibliographically approved
Zhang, Q., Zhang, H., Wu, Z., Wang, C., Zhang, R., Yang, C., . . . Fahlman, M. (2022). Natural Product Betulin-Based Insulating Polymer Filler in Organic Solar Cells. Solar RRL, 6(9), Article ID 2200381.
Open this publication in new window or tab >>Natural Product Betulin-Based Insulating Polymer Filler in Organic Solar Cells
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2022 (English)In: Solar RRL, E-ISSN 2367-198X, Vol. 6, no 9, article id 2200381Article in journal (Refereed) Published
Abstract [en]

Introduction of filler materials into organic solar cells (OSCs) are a promising strategy to improve device performance and thermal/mechanical stability. However, the complex interactions between the state-of-the-art OSC materials and filler require careful selection of filler materials and OSC fabrication to achieve lower cost and improved performance. In this work, the introduction of a natural product betulin-based insulating polymer as filler in various OSCs is investigated. Donor-acceptor-insulator ternary OSCs are developed with improved open-circuit voltage due to decreased trap-assisted recombination. Furthermore, filler-induced vertical phase separation due to mismatched surface energy can strongly affect charge collection at the bottom interface and limit the filler ratio. A quasi-bilayer strategy is used in all-polymer systems to circumvent this problem. Herein, the variety of filler materials in OSCs to biomass is broadened, and the filler strategy is made a feasible and promising strategy toward highly efficient, eco, and low-cost OSCs.

Place, publisher, year, edition, pages
Wiley-V C H Verlag GMBH, 2022
Keywords
betulin; filler strategy; organic solar cells
National Category
Textile, Rubber and Polymeric Materials
Identifiers
urn:nbn:se:liu:diva-186508 (URN)10.1002/solr.202200381 (DOI)000809737000001 ()
Note

Funding Agencies|Knut and Alice Wallenberg Foundation (KAW) through the Wallenberg Wood Science Center; Swedish Energy Agency [45411-1]; Swedish Research Council [2016-05498, 2016-05990, 2020-04538, 2018-06048]; STINT grant [CH2017-7163]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]

Available from: 2022-06-29 Created: 2022-06-29 Last updated: 2024-01-10Bibliographically approved
Xu, K., Ruoko, T.-P., Shokrani, M., Scheunemann, D., Abdalla, H., Sun, H., . . . Fabiano, S. (2022). On the Origin of Seebeck Coefficient Inversion in Highly Doped Conducting Polymers. Advanced Functional Materials, 32(20), Article ID 2112276.
Open this publication in new window or tab >>On the Origin of Seebeck Coefficient Inversion in Highly Doped Conducting Polymers
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2022 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 32, no 20, article id 2112276Article in journal (Refereed) Published
Abstract [en]

A common way of determining the majority charge carriers of pristine and doped semiconducting polymers is to measure the sign of the Seebeck coefficient. However, a polarity change of the Seebeck coefficient has recently been observed to occur in highly doped polymers. Here, it is shown that the Seebeck coefficient inversion is the result of the density of states filling and opening of a hard Coulomb gap around the Fermi energy at high doping levels. Electrochemical n-doping is used to induce high carrier density (>1 charge/monomer) in the model system poly(benzimidazobenzophenanthroline) (BBL). By combining conductivity and Seebeck coefficient measurements with in situ electron paramagnetic resonance, UV-vis-NIR, Raman spectroelectrochemistry, density functional theory calculations, and kinetic Monte Carlo simulations, the formation of multiply charged species and the opening of a hard Coulomb gap in the density of states, which is responsible for the Seebeck coefficient inversion and drop in electrical conductivity, are uncovered. The findings provide a simple picture that clarifies the roles of energetic disorder and Coulomb interactions in highly doped polymers and have implications for the molecular design of next-generation conjugated polymers.

Place, publisher, year, edition, pages
Wiley-V C H Verlag GMBH, 2022
Keywords
conducting polymers; organic electrochemical transistor; Seebeck coefficient; thermoelectric application
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-182954 (URN)10.1002/adfm.202112276 (DOI)000751371400001 ()
Note

Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [2020-03243]; Olle Engkvists Stiftelse [204-0256]; European CommissionEuropean CommissionEuropean Commission Joint Research Centre [GA-955837, GA-799477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germanys Excellence Strategy via the Excellence Cluster 3D Matter Made to OrderGerman Research Foundation (DFG) [EXC-2082/1-390761711]; Carl Zeiss Foundation; Deutsche ForschungsgemeinschaftGerman Research Foundation (DFG) [FA 1502/1-1]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [52173156]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [ITM17-0316]

Available from: 2022-02-16 Created: 2022-02-16 Last updated: 2023-12-28Bibliographically approved
Guo, H., Yang, C., Zhang, X., Motta, A., Feng, K., Xia, Y., . . . Guo, X. (2021). Transition metal-catalysed molecular n-doping of organic semiconductors. Nature, 599(7883), 67-73
Open this publication in new window or tab >>Transition metal-catalysed molecular n-doping of organic semiconductors
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2021 (English)In: Nature, ISSN 0028-0836, E-ISSN 1476-4687, Vol. 599, no 7883, p. 67-73Article in journal (Refereed) Published
Abstract [en]

Electron doping of organic semiconductors is typically inefficient, but here a precursor molecular dopant is used to deliver higher n-doping efficiency in a much shorter doping time. Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices(1-9). N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (eta) of less than 10%(1,10). An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability(1,5,6,9,11), which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd-2(dba)(3)) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased eta in a much shorter doping time and high electrical conductivities (above 100 S cm(-1); ref. (12)). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications(12, 13).

Place, publisher, year, edition, pages
London, United Kingdom: Nature Publishing Group, 2021
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:liu:diva-181033 (URN)10.1038/s41586-021-03942-0 (DOI)000714417400015 ()34732866 (PubMedID)2-s2.0-85118530336 (Scopus ID)
Available from: 2021-11-17 Created: 2021-11-17 Last updated: 2023-12-28Bibliographically approved
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0003-4270-1131

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