Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon CarbideShow others and affiliations
2012 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 12, no 4, p. 1977-1984Article in journal (Refereed) Published
Abstract [en]
Kinetic calculations of the chemical phenomena occurring in the epitaxial growth of silicon carbide are performed in this study. The main process parameters analyzed are precursor types, growth temperature, Cl/Si ratio, and precursors concentration. The analysis of the gas-phase reactions resulted in a model which could explain most of the already reported experimental results, performed in horizontal hot-wall reactors. The effect of using different carbon or silicon precursors is discussed, by comparing the gas-phase composition and the resulting C/Si ratio inside the hot reaction chamber. Chlorinated molecules with three chlorine atoms seem to be the most efficient and resulting in a uniform C/Si ratio along the susceptor coordinate. Further complexity in the process derives from the use of low temperatures, which affects not only the gas-phase composition but also the risk of gas-phase nucleation. The Cl/Si ratio is demonstrated to be crucial not only for the prevention of silicon clusters but also for the uniformity of the gas-phase composition.
Place, publisher, year, edition, pages
American Chemical Society , 2012. Vol. 12, no 4, p. 1977-1984
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77100DOI: 10.1021/cg201684eISI: 000302336900034OAI: oai:DiVA.org:liu-77100DiVA, id: diva2:524943
Note
Funding Agencies|The Swedish Energy Agency|32917-1|Swedish Research Council||
2012-05-042012-05-042017-12-07