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Growth characteristics of SiC in a hot-wall CVD reactor with rotation
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
Vise andre og tillknytning
2002 (engelsk)Inngår i: Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002, Vol. 389-3, s. 191-194Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

SiC epitaxy has been studied in a horizontal hot-wall CVD reactor with rotation by gas foil levitation. A capacity of three 2 inch wafers has been realized, and the thickness uniformity over a 2 inch wafer is below 1% and the n-doping uniformity over a 35mm wafer, below 10%. Both n- and p-type doping is readily achieved with no memory effect. The layer morphology has been investigated and a featureless surface has been obtained through process optimization and a modification of the hot zone.

sted, utgiver, år, opplag, sider
2002. Vol. 389-3, s. 191-194
Emneord [en]
CVD, doping, hot-wall, morphology, rotation, uniformity
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-48797OAI: oai:DiVA.org:liu-48797DiVA, id: diva2:269693
Konferanse
ICSCRM2001
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2014-10-08

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