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Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
University of Cambridge, England.
Chalmers, Sweden.
University of Cambridge, England.
National Phys Lab, England.
Vise andre og tillknytning
2017 (engelsk)Inngår i: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 119, s. 426-430Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below T*, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. (C) 2017 Elsevier Ltd. All rights reserved.

sted, utgiver, år, opplag, sider
PERGAMON-ELSEVIER SCIENCE LTD , 2017. Vol. 119, s. 426-430
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Identifikatorer
URN: urn:nbn:se:liu:diva-138872DOI: 10.1016/j.carbon.2017.04.019ISI: 000402713300050OAI: oai:DiVA.org:liu-138872DiVA, id: diva2:1115975
Merknad

Funding Agencies|Engineering and Physical Sciences Research Council [EP/L020963/1]; EU [696656 - GrapheneCore 1]

Tilgjengelig fra: 2017-06-27 Laget: 2017-06-27 Sist oppdatert: 2017-06-27

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