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Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors
University of Groningen, Netherlands; Philips Research Labs, Netherlands.
Philips Research Labs, Netherlands; Technical University of Eindhoven, Netherlands.
University of Bayreuth, Germany; University of Freiburg, Germany.
University of Bayreuth, Germany.
Vise andre og tillknytning
2012 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, nr 15, artikkel-id 153302Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO2 field-effect sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758697]

sted, utgiver, år, opplag, sider
American Institute of Physics (AIP) , 2012. Vol. 101, nr 15, artikkel-id 153302
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Identifikatorer
URN: urn:nbn:se:liu:diva-141441DOI: 10.1063/1.4758697ISI: 000310304900078OAI: oai:DiVA.org:liu-141441DiVA, id: diva2:1145810
Merknad

Funding Agencies|Zernike Institute for Advanced Materials; Netherlands Organization for Scientific Research (NWO) [700.57.425]; EU project ONE-P [212311]

Tilgjengelig fra: 2017-09-29 Laget: 2017-09-29 Sist oppdatert: 2017-10-09

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