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Doped 3C-SiC Towards Solar Cell Applications
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
2018 (engelsk)Independent thesis Advanced level (degree of Master (Two Years)), 20 poäng / 30 hpOppgave
Abstract [en]

The market for renewable energy sources, and solar cells in particular is growing year by year, as a result there is a large interest in research on new materials and new technologies for solar power applications. In this thesis the photovoltaic properties of cubic silicon carbide (3C-SiC) has been investigated. The research includes material growth using the sublimation epitaxy method, both n-type and p-type SiC have been investigated. 3C-SiC pn junctions have been produced and their electrical properties have been characterized, this is the first time 3C-SiC pn junctions have been studied in the research group. Photoresponse has been demonstrated from a 3C-SiC pn junction with Al and N used as p- and ntype dopants. This is the first demonstrated solar cell performance using 3C-SiC, to our knowledge.

sted, utgiver, år, opplag, sider
2018. , s. 40
Emneord [en]
Silicon carbide, 3C-SiC, sublimation epitaxy, ohmic contact, photovoltaic, solar cell
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-148595ISRN: LITH-IFM-A-EX--17/3428--SEOAI: oai:DiVA.org:liu-148595DiVA, id: diva2:1218464
Fag / kurs
Physics
Presentation
2017-11-27, 10:15 (engelsk)
Veileder
Examiner
Tilgjengelig fra: 2018-06-21 Laget: 2018-06-14 Sist oppdatert: 2018-06-21bibliografisk kontrollert

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