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Effect of substrate temperature on the deposition of Al-doped ZnO thin films using high power impulse magnetron sputtering
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten. Univ Lorraine, France.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-1744-7322
Univ Lorraine, France.
2018 (engelsk)Inngår i: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 347, s. 245-251Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 degrees C. Two sample series with different oxygen partial pressures were studied. The films with the lowest resistivity of 3 x 10(-4) SI cm were deposited at the highest substrate temperature of 600 degrees C. The improvement of the electrical properties could be related to an improvement of the mobility due to the improved crystallinity. This improved crystallinity also increased the stability of the films towards ambient moisture. On the other hand, the detrimental influence of negative oxygen bombardment could be avoided, as the HiPIMS process can take place in the metal or transition mode even at relatively high oxygen partial pressures.

sted, utgiver, år, opplag, sider
ELSEVIER SCIENCE SA , 2018. Vol. 347, s. 245-251
Emneord [en]
ZnO; Transparent conducting oxide; HiPIMS; Temperature Electrical properties; Thin films
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-149677DOI: 10.1016/j.surfcoat.2018.04.089ISI: 000436917300028OAI: oai:DiVA.org:liu-149677DiVA, id: diva2:1235315
Merknad

Funding Agencies|European Commission within the DocMASE project

Tilgjengelig fra: 2018-07-25 Laget: 2018-07-25 Sist oppdatert: 2018-07-25

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