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Growth and characterization of ZnO nanostructured material
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
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2008 (engelsk)Inngår i: Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, E-ISSN 1841-7132, Vol. 10, nr 11, s. 2969-2975Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

ZnO is a wide band gap (3.37 eV) semiconductor material with a high exciton binding energy (60 meV) at room temperature, which is a prerequisite for realization of efficient and stable optoelectronic systems. We demonstrated the APMOCVD growth of nanostructured ZnO material on Si and SiC with advanced emitting properties. The comparison of the properties of nanostructured polycrystalline layers with spatially disconnected ZnO nanocrystals clearly showed the advantage of the latter structures. Such structures distinctively luminesce in the UV range of the spectrum due to excitonic emission, while the contribution of the defect related luminescence is negligible. The significant improvement of the PL properties can be related to the decreased number of non-radiative recombination centers in the nanocrystals of high structural quality.

sted, utgiver, år, opplag, sider
2008. Vol. 10, nr 11, s. 2969-2975
Emneord [en]
APMOCVD; Nanohexagons; Nanopillars; XRD, Photoluminescence
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-16207OAI: oai:DiVA.org:liu-16207DiVA, id: diva2:133437
Tilgjengelig fra: 2009-01-12 Laget: 2009-01-09 Sist oppdatert: 2017-12-14

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Khranovskyy, VolodymyrYazdi, GholamrezaLarsson, ArvidHoltz, Per-OlofYakimova, Rositsa

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