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Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
2006 (engelsk)Inngår i: Physical Review B, ISSN 1098-0121, Vol. 74, nr 24Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A photoluminescence study of self-assembled InAs/GaAs quantum dots under the influence of magnetic fields perpendicular and parallel to the dot layer is presented. At low temperatures, the magnetic field perpendicular to the dot layer alters the in-plane transport properties due to localization of carriers in wetting layer (WL) potential fluctuations. Decreased transport in the WL results in a reduced capture into the quantum dots and consequently a weakened dot-related emission. The effect of the magnetic field exhibits a considerable dot density dependence, which confirms the correlation to the in-plane transport properties. An interesting effect is observed at temperatures above approximately 100  K, for which magnetic fields, both perpendicular and parallel to the dot layer, induced an increment of the quantum dot photoluminescence. This effect is ascribed to the magnetic confinement of the exciton wave function, which increases the probability for carrier capture and localization in the dot, but affects also the radiative recombination with a reduced radiative lifetime in the dots under magnetic compression.

sted, utgiver, år, opplag, sider
2006. Vol. 74, nr 24
Emneord [en]
indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, photoluminescence, magneto-optical effects, self-assembly, localised states, excitons, wave functions, radiative lifetimes, galvanomagnetic effects
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-16330DOI: 10.1103/PhysRevB.74.245312OAI: oai:DiVA.org:liu-16330DiVA, id: diva2:133868
Merknad
Original Publication: Mats Larsson, Evgenii Moskalenko, Andréas Larsson, Per-Olof Holtz, C. Verdozzi, C.-O. Almbladh, W. V. Schoenfeld and P. M. Petroff, Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots, 2006, Physical Review B, (74), 245312. http://dx.doi.org/10.1103/PhysRevB.74.245312 Copyright: American Physical Society http://www.aps.org/ Tilgjengelig fra: 2009-01-15 Laget: 2009-01-15 Sist oppdatert: 2012-12-11bibliografisk kontrollert
Inngår i avhandling
1. Spectroscopy of semiconductor quantum dots
Åpne denne publikasjonen i ny fane eller vindu >>Spectroscopy of semiconductor quantum dots
2005 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Quantum dots in the Si/Ge and InAs/GaAs materials systems are examined by means of photoluminescence. The spectroscopic study of Si/Ge quantum dots has demonstrated two different radiative recombination channels in the type II band alignment: The spatially direct transition inside the dot and the spatially indirect transition across the dot interface. Increased sample temperature results in a gradual transfer from the spatially indirect to the spatially direct recombination due to higher oscillator strength combined with the increased electron population inside the dot. In contrast to the spatially direct transition, the spatially indirect transition is shown to be sensitive to the carrier density due to the band bending at the Si/Ge interface. Due to an increased Si/Ge intermixing and hence reduced strain in the Si barrier, a reduction of the conduction band offset at increased growth temperatures is observed utilizing the different recombination channels as probes. The optical properties as derived from photoluminescence are correlated with the structural properties obtained by atomic force microscopy. Furthermore, by applying an electric field across the Si/Ge quantum dot structure, a reversed quantum confined Stark effect is demonstrated for the spatially indirect transition. By switching between the two different field directions, unique information on the growth related asymmetric strain profile derived at the through self-assembly of the quantum dots can be gained since corresponding information can not be obtained for type I systems.

The studies of the InAs/GaAs quantum dots show that external electric and magnetic fields alter the in-plane carrier transport to the dots. The results obtained from the micro-photoluminescence exciton spectra of a single dot demonstrate a redistribution of the excitonic lines when a lateral electric field is applied. This fact exhibits an effective charge reconfiguration of the dot from a purely negative charge state to a neutral state, demonstrating that the number of electrons and holes are controlled by the electric field. The model proposed to explain the charge redistribution is based on an effective hole localization at the potential fluctuations of the wetting layer at low temperatures and low fields. Furthermore, it is demonstrated that the quantum dot photoluminescence signal is considerably increased (up to a factor of 4) depending on the magnitude of the external electric field. The experimental results also show that the internal field is altered by an additional infrared illumination of the sample. An applied magnetic field perpendicular to the quantum dot layer at low temperatures is found to enhance the carrier localization in the wetting layer and accordingly reduce the quantum dot photoluminescence intensity. At higher temperatures (>100K), an enhanced photoluminescence intensity is instead observed due to increased capture, localization, and recombination rate of the carriers in the quantum dots.

sted, utgiver, år, opplag, sider
Linköping: Linköpings universitet, 2005. s. 65
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 976
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-31204 (URN)16952 (Lokal ID)91-85457-48-5 (ISBN)16952 (Arkivnummer)16952 (OAI)
Disputas
2005-11-18, Hörsal Planck, Fysikhuset, Campus Valla, Linköping, 10:15 (svensk)
Opponent
Tilgjengelig fra: 2009-10-09 Laget: 2009-10-09 Sist oppdatert: 2012-12-11

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