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Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
Science Institute, University of Iceland, Iceland.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Science Institute, University of Iceland, Iceland.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Vise andre og tillknytning
2019 (engelsk)Inngår i: Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd , 2019, Vol. 963, s. 460-464Konferansepaper (Fagfellevurdert)
Abstract [en]

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

sted, utgiver, år, opplag, sider
Trans Tech Publications Ltd , 2019. Vol. 963, s. 460-464
Serie
Materials Science Forum
Emneord [en]
Interface Traps, AlN/4H-SiC Interface, MIS Capacitors
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-160897DOI: 10.4028/www.scientific.net/MSF.963.460OAI: oai:DiVA.org:liu-160897DiVA, id: diva2:1360626
Tilgjengelig fra: 2019-10-14 Laget: 2019-10-14 Sist oppdatert: 2019-10-14

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