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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
Chalmers University.
Chalmers University.
Chalmers University.
Chalmers University.
Vise andre og tillknytning
1995 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 52, s. R8643-R8645Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.

sted, utgiver, år, opplag, sider
1995. Vol. 52, s. R8643-R8645
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-17476DOI: 10.1103/PhysRevB.52.R8643OAI: oai:DiVA.org:liu-17476DiVA, id: diva2:209619
Merknad
Original Publication:P. O. Nilsson, J. Kanski, J. V. Thordson, T. G. Andersson, J. Nordgren, J. Guo and Martin Magnuson, Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission, 1995, Physical Review B. Condensed Matter and Materials Physics, (52), R8643-R8645.http://dx.doi.org/10.1103/PhysRevB.52.R8643Copyright: American Physical Societyhttp://www.aps.org/Tilgjengelig fra: 2009-03-26 Laget: 2009-03-25 Sist oppdatert: 2018-06-04bibliografisk kontrollert
Inngår i avhandling
1. Electronic Structure Studies Using Resonant X-ray and Photemission Spectroscopy
Åpne denne publikasjonen i ny fane eller vindu >>Electronic Structure Studies Using Resonant X-ray and Photemission Spectroscopy
1999 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

This thesis addresses the electronic structure of molecules and solids using resonant X-ray emission and photoemission spectroscopy. The use of monochromatic synchrotron radiation and the improved performance of the instrumentation have opened up the possibility of detailed analyses of the response of the electronic systems under interaction with X-rays. The experimental studies are accompanied by numerical ab initio calculations in the formalism of resonant inelastic scattering. The energy selectivity has made it possible for the first time to study how the chemical bonds in a molecule break up during resonant inelastic X-ray scattering. In the conjugated polymer systems, the element selectivity of the X-ray emission process made it possible to probe the different atomic elements separately. The X-ray emission technique proved to be useful for extracting isomeric information, and for measuring the change in the valence levels at different degrees of doping. In this thesis, spectral satellite features in transition metals were thoroughly investigated for various excitation energies around a core-level threshold. By measuring the relative spectral intensity of the satellites it was possible to extract information on the partial core-level widths. Using the nickel metal system as an example, it was shown that it is possible to probe the different core-excited states close toshake-up thresholds by measuring the relative spectral intensity variation of the Auger emission.Resonant photoemission measurements showed unambiguous evidence of interference effects. Theseeffects were also thoroughly probed using angle-dependent measurements. The combination of X-rayemission and absorption were useful for studying buried layers and interfaces due to the appreciable penetration depth of soft X-rays. X-ray scattering was further found to be useful for studying low-energy excited states of rare earth metallic compounds and transition metal oxides.

sted, utgiver, år, opplag, sider
Uppsala: Uppsala University, 1999
Serie
Acta Universitatis Upsaliensis, ISSN 1104-232X ; 452
Emneord
Electronic structure, resonant x-ray emission, photoemission spectroscopy
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-56480 (URN)91-554-4463-6 (ISBN)
Disputas
(engelsk)
Opponent
Tilgjengelig fra: 2010-05-19 Laget: 2010-05-18 Sist oppdatert: 2018-06-04bibliografisk kontrollert

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