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ScAlN nanowires: A cathodoluminescence study
Radboud University Nijmegen.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik. Linköpings universitet, Tekniska högskolan.
Radboud University Nijmegen.
Vise andre og tillknytning
2009 (engelsk)Inngår i: JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, Vol. 311, nr 11, s. 3147-3151Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 mu m, a diameter between 50 and 150 run, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.

sted, utgiver, år, opplag, sider
2009. Vol. 311, nr 11, s. 3147-3151
Emneord [en]
Nanostructures; Hydride vapor phase epitaxy; Nitrides; Semiconducting aluminum compounds
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-20221DOI: 10.1016/j.jcrysgro.2009.03.023OAI: oai:DiVA.org:liu-20221DiVA, id: diva2:233815
Tilgjengelig fra: 2009-09-02 Laget: 2009-08-31 Sist oppdatert: 2009-09-02

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