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Thermoelectric transport properties of highly oriented FeSb2 thin films
University of Aarhus.
University of Aarhus.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-1785-0864
University of Aarhus.
Vise andre og tillknytning
2009 (engelsk)Inngår i: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 106, nr 3Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S similar to 160 mu V K-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.

sted, utgiver, år, opplag, sider
2009. Vol. 106, nr 3
Emneord [en]
carrier density, electrical resistivity, Hall mobility, iron compounds, Seebeck effect, semiconductor thin films, sputter deposition
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-20403DOI: 10.1063/1.3155800OAI: oai:DiVA.org:liu-20403DiVA, id: diva2:234514
Merknad
Original Publication: Y Sun, S Johnsen, Per Eklund, M Sillassen, J Bottiger, N Oeschler, P Sun, F Steglich and B B Iversen, Thermoelectric transport properties of highly oriented FeSb2 thin films, 2009, JOURNAL OF APPLIED PHYSICS, (106), 3, 033710. http://dx.doi.org/10.1063/1.3155800 Copyright: American Institute of Physics http://www.aip.org/ Tilgjengelig fra: 2009-09-08 Laget: 2009-09-07 Sist oppdatert: 2015-01-13

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