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Electron concentration and mobility profiles in InN layers grown by MBE
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Vise andre og tillknytning
2006 (engelsk)Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have studied depth distributions of the electrical parameters in MBE grown InN films with two types of AlN and GaN buffers. Using independently determined Hall effect electron concentration and mobility profiles, as well as electron concentration profile by photoluminescence measurements, we model the real depth profile of carrier mobility, assuming graded inhomogeneity of the sample. The obtained profiles follow power dependences of the same order for layers grown on the two buffers with a small difference in the function coefficients attributed to a contribution of the interface charge in layers grown on AlN buffers. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

sted, utgiver, år, opplag, sider
2006. Vol. 203, nr 7, s. 1681-1685
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-36635DOI: 10.1002/pssa.200565265Lokal ID: 32011OAI: oai:DiVA.org:liu-36635DiVA, id: diva2:257484
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2011-01-11

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