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Low-pressure sublimation epitaxy of AlN films - growth and characterization
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
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2004 (engelsk)Inngår i: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 76, s. 143-146Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.

sted, utgiver, år, opplag, sider
2004. Vol. 76, s. 143-146
Emneord [en]
AIN, sublimation, morphology, XRD, Raman
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-40881DOI: 10.1016/j.vacuum.2004.07.052Lokal ID: 54459OAI: oai:DiVA.org:liu-40881DiVA, id: diva2:261730
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2017-12-13

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Beshkova, MilenaBirch, JensKakanakova-Georgieva, AneliaYakimova, Rositsa

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