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EPR Identification of Defects and Impurities in SiC: To Be Decisive
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Vise andre og tillknytning
2009 (engelsk)Inngår i: Materials Science Forum, Vols. 600-603, Trans Tech Publications , 2009, s. 279-284Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.

sted, utgiver, år, opplag, sider
Trans Tech Publications , 2009. s. 279-284
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-41962DOI: 10.4028/www.scientific.net/MSF.600-603.279Lokal ID: 59422OAI: oai:DiVA.org:liu-41962DiVA, id: diva2:262817
Konferanse
12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007; Otsu; Japan
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Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2014-09-12

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